IEEE transactions on electron devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 271
-
Changes to the Editorial BoardVerret, D. et al. | 2003
- 272
-
Compound Semiconductor Devices - A Self-Consistent Model for Temperature and Current Distribution in Abrupt Heterojunction Bipolar TransistorsAnwar, A.F.M. et al. | 2003
- 272
-
A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistorsAnwar, A.F.M. / Jahan, M.M. et al. | 2003
- 278
-
Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effectsBufler, F.M. / Fichtner, W. et al. | 2003
- 278
-
Compound Semiconductor Devices - Scaling of Strained-Si n-MOSFETs Into the Ballistic Regime and Associated Anisotropic EffectsBufler, F.M. et al. | 2003
- 285
-
Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETsMitani, Y. / Kasai, D. / Horio, K. et al. | 2003
- 285
-
Compound Semiconductor Devices - Analysis of Surface-State and Impact-Ionization Effects on Breakdown Characteristics and Gate-Lag Phenomena in Narrowly Recessed Gate GaAs FETsMitani, Y. et al. | 2003
- 292
-
Compound Semiconductor Devices - The Origins of Leaky Characteristics of Schottky Diodes on p-GaNYu, L.S. et al. | 2003
- 292
-
The origins of leaky characteristics of Schottky diodes on p-GaNYu, L.S. / Jia, L. / Qiao, D. et al. | 2003
- 297
-
Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate puritySghaier, N. / Bluet, J.-M. / Souifi, A. et al. | 2003
- 297
-
Compound Semiconductor Devices - Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate PuritySghaier, N. et al. | 2003
- 303
-
Improvements in direct-current characteristics of Al/sub 0.45/Ga/sub 0.55/As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidationMing-Kwen Tsai, / Shih-Wei Tan, / Yen-Wei Wu, et al. | 2003
- 303
-
Compound Semiconductor Devices - Improvements in Direct-Current Characteristics of Al0.45Ga0.55As-GaAs Digital-Graded Superlattice-Emitter HBTs With Reduced Turn-On Voltage by Wet OxidationTsai, M.-K. et al. | 2003
- 310
-
Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structureSawada, K. / Arai, T. / Takahashi, T. et al. | 2003
- 310
-
Compound Semiconductor Devices - Elimination of Kink Phenomena and Drain Current Hysteresis in InP-Based HEMTs With a Direct Ohmic StructureSawada, K. et al. | 2003
- 315
-
Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization modelTsung-Hsing Yu, / Brennan, K.F. et al. | 2003
- 315
-
Compound Semiconductor Devices - Theoretical Study of a GaN-AlGaN High Electron Mobility Transistor Including a Nonlinear Polarization ModelYu, T.-H. et al. | 2003
- 324
-
Compound Semiconductor Devices - Pulsed Measurements and Circuit Modeling of Weak and Strong Avalanche Effects in GaAs MESFETs and HEMTsMeneghesso, G. et al. | 2003
- 324
-
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTsMeneghesso, G. / Chini, A. / Maretto, M. et al. | 2003
- 333
-
Materials Processing and Packaging - Electrical Characterization and Material Evaluation of Zirconium Oxynitride Gate Dielectric in TaN-gated NMOSFETs With High-Temperature Forming Gas AnnealingNieh, R.E. et al. | 2003
- 333
-
Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealingNieh, R.E. / Chang Seok Kang, / Hag-Ju Cho, et al. | 2003
- 341
-
Optoelectronics Displays and Imaging - Operating Principles and Performance of a Novel A-Si:H P-I-N-Based X-Ray Detector for Medical Image ApplicationsFann, S.-S. et al. | 2003
- 341
-
Operating principles and performance of a novel a-Si:H p-i-n-based X-ray detector for medical image applicationsSen-Shyong Fann, / Yeu-Long Jiang, / Huey-Liang Hwang, et al. | 2003
- 347
-
Optoelectronics Displays and Imaging - The Effects of Nonlocal Impact Ionization on the Speed of Avalanche PhotodiodesHambleton, P.J. et al. | 2003
- 347
-
The effects of nonlocal impact ionization on the speed of avalanche photodiodesHambleton, P.J. / Ng, B.K. / Plimmer, S.A. et al. | 2003
- 352
-
UV-responsive CCD image sensors with enhanced inorganic phosphor coatingsFranks, W.A.R. / Kiik, M.J. / Nathan, A. et al. | 2003
- 352
-
Optoelectronics Displays and Imaging - UV-Responsive CCD Image Sensors With Enhanced Inorganic Phosphor CoatingsFranks, W.A.R. et al. | 2003
- 359
-
Optoelectronics Displays and Imaging - Improvement of Color Temperature Using Independent Control of Red, Green, Blue Luminance in AC Plasma Display PanelCho, K.-D. et al. | 2003
- 359
-
Improvement of color temperature using independent control of red, green, blue luminance in AC plasma display panelKi-Duck Cho, / Heung-Sik Tae, / Sung-Il Chien, et al. | 2003
- 366
-
Optoelectronics Displays and Imaging - Experimental Investigations of the Effect of the Mode-Hopping on the Noise Properties of InGaAsP Fabry-Pérot Multiple-Quantum-Well Laser DiodesPalenskis, V. et al. | 2003
- 366
-
Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodesPalenskis, V. / Matukas, J. / Pralgauskaite, S. et al. | 2003
- 372
-
Hot-hole-induced dielectric breakdown in LDMOS transistorsLabate, L. / Manzini, S. / Roggero, R. et al. | 2003
- 372
-
Reliability - Hot-Hole-Induced Dielectric Breakdown in LDMOS TransistorsLabate, L. et al. | 2003
- 378
-
A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealingJongdae Kim, / Tae Moon Roh, / Sang-Gi Kim, et al. | 2003
- 378
-
Silicon Devices - A Novel Technique for Fabricating High Reliable Trench DMOSFETs Using Self-Align Technique and Hydrogen AnnealingKim, J. et al. | 2003
- 384
-
Improvement of surface carrier mobility of HfO/sub 2/ MOSFETs by high-temperature forming gas annealingOnishi, K. / Chang Seok Kang, / Rino Choi, et al. | 2003
- 384
-
Silicon Devices - Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-Temperature Forming Gas AnnealingOnishi, K. et al. | 2003
- 391
-
Silicon Devices - Threshold Voltage-Related Soft Error Degradation in a TFF SRAM CellIkeda, S. et al. | 2003
- 391
-
Threshold voltage-related soft error degradation in a TFT SRAM cellIkeda, S. / Yoshida, Y. / Kamohara, S. et al. | 2003
- 397
-
Silicon Devices - Substrate-Triggered SCR Device for On-Chip ESD Protection in Fully Silicided Sub-0.25-mm CMOS ProcessKer, M.-D. et al. | 2003
- 397
-
Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-/spl mu/m CMOS processMing-Dou Ker, / Kuo-Chun Hsu, et al. | 2003
- 406
-
Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET modelLallement, C. / Sallese, J.-M. / Bucher, M. et al. | 2003
- 406
-
Silicon Devices - Accounting for Quantum Effects and Polysilicon Depletion From Weak to Strong Inversion in a Charge-Based Design-Oriented MOSFET ModelLallement, C. et al. | 2003
- 418
-
Silicon Devices - Monte Carlo Simulation and Measurement of Nanoscale n-MOSFETsBufler, F.M. et al. | 2003
- 418
-
Monte Carlo simulation and measurement of nanoscale n-MOSFETsBufler, F.M. / Asahi, Y. / Yoshimura, H. et al. | 2003
- 425
-
Effect of band alignment and density of states on the collector current in p-Si/n-Si/sub 1-y/C/sub y//p-Si HBTsSingh, D.V. / Hoyt, J.L. / Gibbons, J.F. et al. | 2003
- 425
-
Silicon Devices - Effect of Band Alignment and Density of States on the Collector Current in p-Si-n-Si1-yCy-p-Si HBTsSingh, D.V. et al. | 2003
- 433
-
Silicon Devices - Impact of Interfacial Layer and Transition Region on Gate Current Performance for High-K Gate Dielectric Stack: Its Tradeoff With Gate CapacitanceFan, Y.-Y. et al. | 2003
- 433
-
Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack: its tradeoff with gate capacitanceYang-Yu Fan, / Qi Xiang, / An, J. et al. | 2003
- 440
-
A quantum correction based on Schrodinger equation applied to Monte Carlo device simulationWinstead, B. / Ravaioli, U. et al. | 2003
- 440
-
Silicon Devices - A Quantum Correction Based on Schrödinger Equation Applied to Monte Carlo Device SimulationWinstead, B. et al. | 2003
- 447
-
Impact-ionization-assisted intermediate band solar cellLuque, A. / Marti, A. / Cuadra, L. et al. | 2003
- 447
-
Solid-State Device Phenomena - Impact-Ionization-Assisted Intermediate Band Solar CellLuque, A. et al. | 2003
- 455
-
A compact analytical model for asymmetric single-electron tunneling transistorsInokawa, H. / Takahashi, Y. et al. | 2003
- 455
-
Solid-State Device Phenomena - A Compact Analytical Model for Asymmetric Single-Electron Tunneling TransistorsInokawa, H. et al. | 2003
- 462
-
A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistorsInokawa, H. / Fujiwara, A. / Takahashi, Y. et al. | 2003
- 462
-
Solid-State Device Phenomena - A Multiple-Valued Logic and Memory With Combined Single-Electron and Metal-Oxide-Semiconductor TransistorsInokawa, H. et al. | 2003
- 471
-
Development of high-current 4H-SiC ACCUFETSingh, R. / Capell, D.C. / Das, M.K. et al. | 2003
- 471
-
Solid-State Power and High Voltage - Development of High-Current 4H-SiC ACCUFETSingh, R. et al. | 2003
- 479
-
Impact ionization measurements and modeling for power PHEMTBaksht, T. / Solodky, S. / Leibovitch, M. et al. | 2003
- 479
-
Solid-State Power and High Voltage - Impact Ionization Measurements and Modeling for Power PHEMTBaksht, T. et al. | 2003
- 486
-
On the destruction limit of Si power diodes during reverse recovery with dynamic avalancheDomeij, M. / Lutz, J. / Silber, D. et al. | 2003
- 486
-
Solid-State Power and High Voltage - On the Destruction Limit of Si Power Diodes During Reverse Recovery With Dynamic AvalancheDomeij, M. et al. | 2003
- 494
-
A low-cost uncooled infrared microbolometer detector in standard CMOS technologyTezcan, D.S. / Eminoglu, S. / Akin, T. et al. | 2003
- 494
-
Solid-State Sensors and Actuators - A Low-Cost Uncooled Infrared Microbolometer Detector in Standard CMOS TechnologyTezcan, D.S. et al. | 2003
- 503
-
A diode-based two-wire solution for temperature-compensated piezoresistive pressure sensorsMelvas, P. / Stemme, G. et al. | 2003
- 503
-
Solid-State Sensors and Actuators - A Diode-Based Two-Wire Solution for Temperature-Compensated Piezoresistive Pressure SensorsMelvås, P. et al. | 2003
- 510
-
BRIEFS - Reduction of Charge-Transport Characteristics of SiGe Dot Floating Gate Memory Device With ZrO2 Tunneling OxideKim, D.-W. et al. | 2003
- 510
-
Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO/sub 2/ tunneling oxideDong-Won Kim, / Prins, F.E. / Taehoon Kim, et al. | 2003
- 513
-
Impurity profile effects of buffer layer on PT-IGBT characteristicsChung-Hee Kim, / Sang-Koo Chung, et al. | 2003
- 513
-
BRIEFS - Impurity Profile Effects of Buffer Layer on PT-IGBT CharacteristicsKim, C.-H. et al. | 2003
- 516
-
BRIEFS - A New and Improved Structure of Polysilicon Resistor for Subquarter Micrometer CMOS Device ApplicationsThei, K.-B. et al. | 2003
- 516
-
A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applicationsKong-Beng Thei, / Chung-Long Cheng, / Hsin-Chien Lin, et al. | 2003
- 519
-
Si and Zn co-doped InGaN-GaN white light-emitting diodesChang, S.J. / Wu, L.W. / Su, Y.K. et al. | 2003
- 519
-
BRIEFS - Si and Zn Co-Doped InGaN-GaN White Light-Emitting DiodesChang, S.J. et al. | 2003
- 522
-
BRIEFS - Self-Erasing Discharge Mode for Improvement of Luminous Efficiency in AC Plasma Display PanelTae, H.-S. et al. | 2003
- 522
-
Self-erasing discharge mode for improvement of luminous efficiency in AC plasma display panelHeung-Sik Tae, / Byung-Gwon Cho, / Sung-Il Chien, et al. | 2003
- 525
-
BRIEFS - An Analysis of Small-Signal Gate-Drain Resistance Effect on RF Power MOSFETsLin, Y.-S. et al. | 2003
- 525
-
An analysis of small-signal gate-drain resistance effect on RF power MOSFETsYo-Sheng Lin, / Shey-Shi Lu, et al. | 2003
- 529
-
BRIEFS - Effects of Uniaxial Mechanical Stress on Drive Current of 0.13 mm MOSFETsWang, Y.G. et al. | 2003
- 529
-
Effects of uniaxial mechanical stress on drive current of 0.13 /spl mu/m MOSFETsWang, Y.G. / Scott, D.B. / Wu, J. et al. | 2003
- 532
-
BRIEFS - Effect of Sulfur Passivation and Polyimide Capping on InGaAs-InP PIN PhotodetectorsRavi, M.R. et al. | 2003
- 532
-
Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectorsRavi, M.R. / DasGupta, A. / DasGupta, N. et al. | 2003
- 535
-
BRIEFS - Nitride-Based Light Emitting Diodes With Si-Doped In0.23Ga0.77N-GaN Short Period Superlattice Tunneling Contact LayerKuo, C.H. et al. | 2003
- 535
-
Nitride-based light emitting diodes with Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short period superlattice tunneling contact layerKuo, C.H. / Chang, S.J. / Su, Y.K. et al. | 2003
- 537
-
Reduction of the dead region for edge on strip detector by a guard ring structureDejun Han, / Chuanmin Wang, / Guangfu Wang, et al. | 2003
- 537
-
BRIEFS - Reduction of the Dead Region for Edge on Strip Detector by a Guard Ring StructureHan, D. et al. | 2003