Microelectronic engineering
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1
-
PrefaceRusli / Tin, Chin-Che / Matsunami, Hiroyuki et al. | 2005
- 2
-
Current SiC technology for power electronic devices beyond SiMatsunami, H. et al. | 2005
- 5
-
Unusual defects in silicon carbide thin films grown by multiple or interrupted growth techniqueGupta, A. / Jacob, C. et al. | 2005
- 9
-
The role of oxygen in electron cyclotron resonance etching of silicon carbideXia, J.H. / Rusli / Choy, S.F. et al. | 2005
- 12
-
Auger electron spectroscopy study of reactive ion etched silicon carbideXia, J.H. / Rusli / Choy, S.F. et al. | 2005
- 17
-
Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiationMatsuura, Hideharu / Kagamihara, Sou / Itoh, Yuji et al. | 2005
- 20
-
Design of wideband hybrid silicon carbide single-stage power amplifierJean, Almira / Rusli / Shen, Zhongxiang et al. | 2005
- 24
-
High current capability of 3C-SiC vertical DMOSFETsAbe, M. / Nagasawa, H. / Ericsson, P. et al. | 2005
- 27
-
Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristicsNegoro, Y. / Kimoto, T. / Kataoka, M. et al. | 2005
- 30
-
Analysis of minority carrier diffusion length in SiC toward high quality epitaxial growthHatayama, T. / Yano, H. / Uraoka, Y. et al. | 2005
- 34
-
Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substratesAs, D.J. / Potthast, S. / Fernandez, J. et al. | 2005
- 37
-
Unterminated 4H-SiC Schottky barrier diodes with novel HfNxBy electrodesKumta, A. / Rusli / Tin, Chin-Che et al. | 2005
- 41
-
Low-temperature growth of polycrystalline SiC by catalytic CVD from monomethylsilaneKaneko, T. / Hosokawa, Y. / Suga, T. et al. | 2005
- 45
-
Temperature dependence of the c-axis drift mobility in 4H#8211SiCGalvagno, G. et al. | 2006
- 45
-
Temperature dependence of the c-axis drift mobility in 4H–SiCGalvagno, G. / Roccaforte, F. / Ruggiero, A. et al. | 2005
- 48
-
High growth rate process in a SiC horizontal CVD reactor using HClVia, F. La / Galvagno, G. / Roccaforte, F. et al. | 2005
- 51
-
Investigations on high temperature polyimide potentialities for silicon carbide power device passivationZelmat, Samir / Locatelli, Marie-Laure / Lebey, Thierry et al. | 2005
- 55
-
Microscopic properties of H2 diluted HWCVD deposited a-SiC:H filmSwain, Bibhu P. / Dusane, Rajiv O. et al. | 2005
- 58
-
Investigation of Ta2O5/SiO2/4H-SiC MIS capacitorsZhao, P. / Rusli / Lok, B.K. et al. | 2005
- 61
-
Investigation of 4H-SiC MOS capacitors annealed in diluted N2O at different temperaturesZhao, P. / Rusli / Liu, Y. et al. | 2005
- 65
-
Effects of rapid thermal annealing on nitrided gate oxide grown on 4H-SiCCheong, K.Y. / Bahng, W. / Kim, N.-K. et al. | 2005
- 72
-
Characterization of SiC MESFETs with narrow channel layerRusli / Zhu, C.L. / Zhao, P. et al. | 2005
- 75
-
Analysis of bulk and surface components of leakage current in 4H-SiC PiN MESA diodesWolborski, Maciej / Bakowski, Mietek / Schöner, Adolf et al. | 2005
- 79
-
Influence of lattice polarity of nitrogen and aluminum doping on 4H-SiC epitaxial layerKojima, Kazutoshi / Kuroda, Satoshi / Okumura, Hajime et al. | 2005
- 82
-
In situ etch treatment of bulk surface for epitaxial layer growth optimizationPirri, C.F. / Ferrero, S. / Scaltrito, L. et al. | 2005
- 86
-
Intrinsic 4H-SiC parameters study by temperature behaviour analysis of Schottky diodesPirri, C.F. / Ferrero, S. / Scaltrito, L. et al. | 2005
- 89
-
Fabrication of quasi-one dimension silicon carbide nanorods prepared by RF sputteringXu, Dayin / He, Zhiwei / Guo, Yongping et al. | 2005
- 92
-
Improved performance of SiC MESFETs using double-recessed structureZhu, C.L. / Rusli / Tin, C.C. et al. | 2005
- 96
-
A three-region analytical model for short-channel SiC MESFETsZhu, C.L. / Rusli / Tin, C.C. et al. | 2005
- 100
-
Numerical modeling of SiC–CVD in a horizontal hot-wall reactorNishizawa, Shin-ichi / Pons, Michel et al. | 2005
- 100
-
Numerical modeling of SiC#8211CVD in a horizontal hot-wall reactorNishizawa, Shin-ichi et al. | 2006
- 104
-
Visible blind p–i–n ultraviolet photodetector fabricated on 4H-SiCChen, Xiaping / Yang, Weifeng / Wu, Zhengyun et al. | 2005
- 104
-
Visible blind p#8211i#8211n ultraviolet photodetector fabricated on 4H-SiCChen, Xiaping et al. | 2006
- 107
-
Normally-off trench JFET technology in 4H silicon carbideMalhan, R.K. / Takeuchi, Y. / Kataoka, M. et al. | 2005
- 112
-
High-voltage SiC and GaN power devicesChow, T. Paul et al. | 2005
- 123
-
Silicon carbide as a material for mainstream electronicsDimitrijev, Sima et al. | 2005
- 126
-
Raman scattering characterization on SiCHarima, Hiroshi et al. | 2005
- 130
-
Intrinsic defects in high-purity SiCJanzén, E. / Son, N.T. / Magnusson, B. et al. | 2005
- 135
-
SiC-DACFETKitabatake, Makoto et al. | 2005
- 139
-
Ultrahigh-quality single crystals of silicon carbide by alternate repetition of growth perpendicular to c-axisNakamura, Daisuke et al. | 2005
- 142
-
Dislocation processes during SiC bulk crystal growthOhtani, Noboru / Katsuno, Masakazu / Tsuge, Hiroshi et al. | 2005
- 146
-
Defect-engineering in SiC by ion implantation and electron irradiationPensl, G. / Ciobanu, F. / Frank, T. et al. | 2005
- 150
-
Device processing and characterisation of high temperature silicon carbide Schottky diodesVassilevski, K.V. / Nikitina, I.P. / Wright, N.G. et al. | 2005
- 155
-
Bulk growth of single crystal silicon carbideSudarshan, T.S. / Maximenko, S.I. et al. | 2005
- 160
-
Fabrication and characterization of 4H-SiC planar MESFETsNa, Hoon Joo / Moon, Jeong Hyun / Yim, Jeong Hyuk et al. | 2005
- 165
-
Optical properties of cubic SiC grown on Si substrate by chemical vapor depositionFeng, Zhe Chuan et al. | 2005
- 170
-
Hetero-epitaxial growth of SiCGe on SiCChen, Z.M. / Pu, H.B. / Wo, L.M. et al. | 2005
- 176
-
SiC junction-controlled transistorsMihaila, A.-P. / Udrea, F. / Rashid, S.J. et al. | 2005
- 181
-
Unipolar SiC power devices and elevated temperatureFriedrichs, Peter / Stephani, Dietrich et al. | 2005
- 185
-
Hetero- and homo-epitaxial growth of 3C-SiC for MOS-FETsNagasawa, H. / Yagi, K. / Kawahara, T. et al. | 2005
- 189
-
A new design of the SiC light-activated Darlington power transistorChen, Z.M. / Pu, H.B. / Lü, Z. et al. | 2005
- CO2
-
Editorial board| 2006
- iv
-
Table of Contents| 2006