IEEE transactions on electron devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 2235
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Silicon and Column IV Semiconductors Devices - Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect TransistorJain, A et al. | 2014
- 2235
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Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect TransistorJain, Ankit / Alam, Muhammad Ashraful et al. | 2014
- 2243
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Stochastic Modeling of Positive Bias Temperature Instability in High- \(\kappa \) Metal Gate nMOSFETsHassan, Mohammad Khaled / Ho, Chih-Hsiang / Roy, Kaushik et al. | 2014
- 2243
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Stochastic Modeling of Positive Bias Temperature Instability in High-K Metal Gate nMOSFETsHassan, M K et al. | 2014
- 2250
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Improved Body Effect and Analog Characteristics of n-Channel MOSFET With Lateral Asymmetric Substrate DopingNa, Kee-Yeol / Baek, Ki-Ju / Kim, Jun-Kyu et al. | 2014
- 2257
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Output-Conductance Transition-Free Method for Improving the Radio-Frequency Linearity of Silicon-on-Insulator MOSFET CircuitsDaghighi, Arash et al. | 2014
- 2264
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A Pseudo-2-D-Analytical Model of Dual Material Gate All-Around Nanowire Tunneling FETVishnoi, Rajat / Kumar, M. Jagadesh et al. | 2014
- 2271
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Predictive Simulation and Benchmarking of Si and Ge pMOS FinFETs for Future CMOS TechnologyShifren, Lucian / Aitken, Robert / Brown, Andrew R. et al. | 2014
- 2278
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Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTsAlexakis, Petros / Alatise, Olayiwola / Hu, Ji et al. | 2014
- 2287
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A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- \(\kappa \) Gate-StacksVandelli, Luca / Larcher, Luca / Veksler, Dmitry et al. | 2014
- 2287
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A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-K Gate-StacksVandelli, L et al. | 2014
- 2294
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Investigations of Conduction Mechanisms of the Self-Rectifying n+Si-HfO2–Ni RRAM DevicesLu, Dongyi / Zhao, Yadong / Anh, Tran Xuan et al. | 2014
- 2302
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Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective EtchingTseng, Victor Farm-Guoo / Xie, Huikai et al. | 2014
- 2309
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Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETsGhosh, Ram Krishna / Brahma, Madhuchhanda / Mahapatra, Santanu et al. | 2014
- 2316
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Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma PostoxidationZhang, Rui / Yu, Xiao / Takenaka, Mitsuru et al. | 2014
- 2324
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Impact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design ImplicationsJia, Xiaojia / Niu, Guofu et al. | 2014
- 2332
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Compound Semiconductor Devices - Nonplanar InGaAs Gate Wrapped Ardund Field-Effect TransistorsXue, F et al. | 2014
- 2332
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Nonplanar InGaAs Gate Wrapped Around Field-Effect TransistorsXue, Fei / Jiang, Aiting / Chen, Yen-Ting et al. | 2014
- 2338
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Fabrication of Submicrometer InGaAs/AIAs Resonant Tunneling Diode Using a Trilayer Soft Reflow Technique With Excellent ScalabilityMd Zawawi, M A et al. | 2014
- 2338
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Fabrication of Submicrometer InGaAs/AlAs Resonant Tunneling Diode Using a Trilayer Soft Reflow Technique With Excellent ScalabilityZawawi, Mohamad Adzhar Md / Ian, Ka Wa / Sexton, James et al. | 2014
- 2343
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A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias VoltagesKarumuri, Naveen / Turuvekere, Sreenidhi / DasGupta, Nandita et al. | 2014
- 2343
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A Continuous Analytical Model for 2-DEG Charge Density in AIGaN/GaN HEMTs Valid for All Bias VoltagesKarumuri, N et al. | 2014
- 2350
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A Highly Reliable 2-Bits/Cell Split-Gate Flash Memory Cell With a New Program-Disturbs Immune Array ConfigurationFang, Liang / Gu, Jing / Zhang, Bo et al. | 2014
- 2350
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Memory Devices and Technology - A Highly Reliable 2-Bits/Cell Split-Gate Flash Memory Cell With a New Program-Disturbs Immune Array ConfigurationFang, L et al. | 2014
- 2357
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An 8T Low-Voltage and Low-Leakage Half-Selection Disturb-Free SRAM Using Bulk-CMOS and FinFETsPasandi, Ghasem / Fakhraie, Sied Mehdi et al. | 2014
- 2364
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High Performance of Fin-Shaped Tunnel Field-Effect Transistor SONOS Nonvolatile Memory With All Programming Mechanisms in Single DeviceJhan, Yi-Ruei / Wu, Yung-Chun / Lin, Hsin-Yi et al. | 2014
- 2371
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Design of Gate-All-Around Silicon MOSFETs for 6-T SRAM Area Efficiency and YieldLiao, Yi-Bo / Chiang, Meng-Hsueh / Damrongplasit, Nattapol et al. | 2014
- 2378
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Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive SwitchesAmbrogio, Stefano / Balatti, Simone / Gilmer, David C. et al. | 2014
- 2387
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Bidirectional Communication in an HF Hybrid Organic/Solution-Processed Metal-Oxide RFID TagMyny, Kris / Rockele, Maarten / Chasin, Adrian et al. | 2014
- 2387
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Thin Film Transistors - Bidirectional Communication in an HF Hybrid Organic/Solution-Processed Metal-Oxide RFID TagMyny, K et al. | 2014
- 2394
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A New Definition of the Threshold Voltage for Amorphous InGaZnO Thin-Film TransistorsQiang, Lei / Yao, Ruohe et al. | 2014
- 2398
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Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO2 Gate DielectricTang, Wing Man / Aboudi, Uraib / Provine, J. et al. | 2014
- 2404
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Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap LayerBak, Jun Yong / Ryu, Min-Ki / Park, Sang Hee Ko et al. | 2014
- 2404
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Optoelectronics, Displays, and Imaging - Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap LayerBak, J Y et al. | 2014
- 2412
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A Theory of Multiplication Noise for Electron Multiplying CMOS Image SensorsBrugiere, Timothee / Mayer, Frederic / Fereyre, Pierre et al. | 2014
- 2419
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Modeling and Design of Photonic Crystal Quantum-Dot Semiconductor Optical AmplifiersTaleb, Hussein / Abedi, Kambiz et al. | 2014
- 2427
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Vertical-Injection GaN-Based Light-Emitting Diodes Fabricated With Schottky-Contact Current Blocking LayerOh, Munsik / Kim, Hyunsoo et al. | 2014
- 2432
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Impact of Current Filaments on the Material and Output Characteristics of GaAs Photoconductive SwitchesMa, Cheng / Shi, Wei / Li, Mengxia et al. | 2014
- 2437
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Plan View and Cross-Sectional View EBIC Measurements: Effect of e-Beam Injection Conditions on Extracted Minority Carrier Transport PropertiesMarcelot, Olivier / Maximenko, Sergey I. / Magnan, Pierre et al. | 2014
- 2443
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Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation LayerChang, Li-Chuan / Chen, Yu-An / Kuo, Cheng-Huang et al. | 2014
- 2443
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Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With -Sputtered A1N Nucleation LayerChang, L-C et al. | 2014
- 2448
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Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate DielectricsLi, Min / Zhou, Lei / Wu, Weijing et al. | 2014
- 2454
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New Voltage-Programmed AMOLED Pixel Circuit to Compensate for Nonuniform Electrical Characteristics of LTPS TFTs and Voltage Drop in Power LineLin, Chih-Lung / Hung, Chia-Che / Chen, Po-Syun et al. | 2014
- 2454
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Mew Voltage-Programmed AMOLED Pixel Circuit to Compensate for Nonuniform Electrical Characteristics of LTPS TFTs and Voltage Drop in Power LineLin, C-L et al. | 2014
- 2459
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Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky DiodesRen, Na / Wang, Jue / Sheng, Kuang et al. | 2014
- 2459
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Solid-State Power and High Voltage Devices - Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky DiodesRen, N et al. | 2014
- 2466
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A RESURF-Enhanced p-Channel Trench SOI LDMOS With Ultralow Specific on-ResistanceZhou, Kun / Luo, Xiaorong / Xu, Qing et al. | 2014
- 2473
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Materials, Processing and Packaging - Nondestructive Measurement of the Residual Stresses in Copper Through-Silicon Vias Using Synchrotron-Based Microbeam X-Ray DiffractionOkoro, C et al. | 2014
- 2473
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Nondestructive Measurement of the Residual Stresses in Copper Through-Silicon Vias Using Synchrotron-Based Microbeam X-Ray DiffractionOkoro, Chukwudi / Levine, Lyle E. / Xu, Ruqing et al. | 2014
- 2480
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Magnetic Wireless Interlayer Transmission Through Perpendicular MTJ for 3-D IC ApplicationsChang, Liang-Shun / Wang, Ching-Hua / Dai, Kun-Yu et al. | 2014
- 2486
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Mobility Measurement in Nanowires Based on Magnetic Field-Induced Current Splitting Method in H-Shape DevicesBarbut, Lucian / Jazaeri, Farzan / Bouvet, Didier et al. | 2014
- 2486
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Solid State Device Phenomena - Mobility Measurement in Nanowires Based on Magnetic Field-Induced Current Splitting Method in H-Shape DevicesBarbut, L et al. | 2014
- 2495
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A Statistical Model for the Headed and Tail Distributions of Random Telegraph Signal Magnitudes in Nanoscale MOSFETsChen, Ming-Jer / Tu, Kong-Chiang / Wang, Huan-Hsiung et al. | 2014
- 2503
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High Density Solenoidal Series Pair Symmetric Inductors and TransformersVanukuru, Venkata Narayana Rao / Chakravorty, Anjan et al. | 2014
- 2509
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Accurate Fast Capacitance Measurements for Reliable Device CharacterizationShrestha, Pragya R. / Cheung, Kin P. / Campbell, Jason Paul et al. | 2014
- 2515
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Impact of a Pocket Doping on the Device Performance of a Schottky Tunneling Field-Effect TransistorGuin, Shilpi / Chattopadhyay, Avik / Karmakar, Anupam et al. | 2014
- 2523
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Vacuum Electron Devices - Development and Application of a Nonlinear Beam-Wave Interaction Code SBK2D for Sheet Beam KlystronsRuan, C et al. | 2014
- 2523
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Development and Application of a Nonlinear Beam-Wave Interaction Code SBK2D for Sheet Beam KlystronsRuan, Cunjun / Chen, Shuyuan / Zhang, Xiaofeng et al. | 2014
- 2531
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Design and Experiment of a 220/420-GHz Gyrotron for Nondestructive EvaluationFu, Wenjie / Guan, Xiaotong / Chen, Chi et al. | 2014
- 2538
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Toward Amp-Level Field Emission With Large-Area Arrays of Pt-Coated Self-Aligned Gated Nanoscale TipsFomani, Arash A. / Guerrera, Stephen A. / Velasquez-Garcia, Luis Fernando et al. | 2014
- 2547
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Computational Design and Optimization of a Magnetron Injection GunJiang, Wei / Luo, Yong / Yan, Ran et al. | 2014
- 2552
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Multipactor Effect in a Parallel-Plate Waveguide Partially Filled With Magnetized FerriteGonzalez-Iglesias, Daniel / Gimeno, Benito / Boria, Vicente E. et al. | 2014
- 2552
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Multipactor Effect in a Parallel-Plate Waveguide Partially Filled With Magnetized FerrkeGonzález-Iglesias, D et al. | 2014
- 2558
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Electrostatic Beam Focusing of Carbon Nanotubes Electron SourceUlisse, Giacomo / Ciceroni, Claudio / Brunetti, Francesca et al. | 2014
- 2564
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Design and Experimental Study of a High-Gain W-Band Gyro-TWT With Nonuniform Periodic Dielectric Loaded WaveguideYan, Ran / Tang, Yong / Luo, Yong et al. | 2014
- 2570
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Simulation of DC and RF Performance of the Graphene Base TransistorVenica, Stefano / Driussi, Francesco / Palestri, Pierpaolo et al. | 2014
- 2570
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Emerging Technologies and Devices - Simulation of DC and RF Performance of the Graphene Base TransistorVenica, S et al. | 2014
- 2577
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Modeling of a Parameter to Evaluate Multilevel Operation of Bipolar Oxide Resistive DeviceChoi, Sang-Jun / Kim, Ki-Hong / Yang, Woo-Young et al. | 2014
- 2577
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BRIEF PAPERS - Modeling of a Parameter to Evaluate Multilevel Operation of Bipolar Oxide Resistive DeviceChoi, S-J et al. | 2014
- 2581
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3-D Vertical Dual-Layer Oxide Memristive DevicesGaba, Siddharth / Sheridan, Patrick / Du, Chao et al. | 2014
- 2584
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Fast Location of Opens in TSV-Based 3-D Chip Using Simple Resistor ChainHu, Sanming / Jin, Cheng / Li, Hongyu et al. | 2014
- 2588
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Optimized pMOS-Triggered Bidirectional SCR for Low-Voltage ESD Protection ApplicationsWang, Zhixin / Sun, Ruei-Cheng / Liou, Juin J. et al. | 2014
- 2595
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The pn Junctions of Epitaxial Germanium on Silicon by Solid Phase DopingTu, Wen-Hsien / Hsu, Shu-Han / Liu, Chee-Wee et al. | 2014
- 2599
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Compact Analytical Drain Current Model of Gate-All-Around Nanowire Tunneling FETVishnoi, Rajat / Kumar, M. Jagadesh et al. | 2014
- 2604
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Corrections to “Electro-Optical Modulation Processes in Si-PMOSFET LEDs Operating in the Avalanche Light Emission Mode”Xu, Kaikai / Sun, Weifeng / Li, G. P. et al. | 2014
- 2605
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2014 IEEE CSICS Short Courses| 2014
- 2606
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2014 IEEE CSICS Highlights| 2014
- 2607
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Special issue of IEEE transactions on electron devices on solid-state image sensors| 2014
- 2608
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Transistors with steep subthreshold swing for low power electronics| 2014
- C1
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Table of contents| 2014
- C2
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IEEE Transactions on Electron Devices publication information| 2014
- C3
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IEEE Transactions on Electron Devices information for authors| 2014
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COMMENTS AND CORRECTIONS - Corrections to "Electro-Optical Modulation Processes in Si-PMOSFET LEDs Operating in the Avalanche Light Emission Mode"Xu, K et al. | 2014
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[Blank page - back cover]| 2014