Thin Solid Films
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1
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Structural study of epitaxial growth on silicon surfacesIchimiya, A. / Nakahara, H. / Tanaka, Y. et al. | 1996
- 5
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Structure and growth features of tungsten clusters deposited on MgO(001) surfacesTanaka, N. / Kimata, H. / Kizuka, T. et al. | 1996
- 10
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Microstructure of germanium films crystallized by high energy ion irradiationNakao, S. / Saitoh, K. / Ikeyama, M. et al. | 1996
- 14
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Epitaxy of Co/Cu and Cu/Co bilayers on MgO(111)Hayasaki, H. / Yamamoto, M. / Nishikawa, K. et al. | 1996
- 17
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Heteroepitaxial growth of InSb(111) on Si(111)Kitabatake, M. / Kawasaki, T. / Korechika, T. et al. | 1996
- 20
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In situ reflection electron microscope observation of two-dimensional nucleation on Si(111) during epitaxial growthLatyshev, A. V. / Krasilnikov, A. B. / Aseev, A. L. et al. | 1996
- 24
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Surface structure of single-crystal CeO~2 layers grown on SiInoue, T. / Yamamoto, Y. / Satoh, M. et al. | 1996
- 28
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Heteroepitaxial growth of yttria-stabilized zirconia film on oxidized silicon by reactive sputteringHorita, S. / Abe, Y. / Kawada, T. et al. | 1996
- 32
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Epitaxy of titanium nitride thin films grown by nitrogen implantationKasukabe, Y. / Ootubo, J. / Takeda, S. et al. | 1996
- 36
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Epitaxial growth of silver on an Si(111) 3 x 3 Au surface at room temperatureIchimiya, A. / Iwashige, H. / Lijadi, M. et al. | 1996
- 39
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Heteroepitaxy of KCl on KBr substrateNatori, A. / Tanaka, A. / Yasunaga, H. et al. | 1996
- 43
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Impurity doping during Pb~1~-~xSn~xSe/CaF~2 epitaxial growthSuzuki, M. / Seki, T. et al. | 1996
- 46
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Crystalline quality of -Fe films on Si(111) and Ge(111) substrates grown by direct ion beam depositionShimizu, S. / Sasaki, N. et al. | 1996
- 52
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Langmuir probe evaluation of ion bombardment during Ti-N growth by unbalanced magnetron sputteringWiemer, C. / Levy, F. / Messier, R. et al. | 1996
- 57
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An atomic force microscopy study of thin copper oxide films grown by molecular beam epitaxy on MgO(100)Brazdeikis, A. / Karlsson, U. O. / Flodstroem, A. S. et al. | 1996
- 60
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Growth of CeO~2 thin films by metal-organic molecular beam epitaxyIkegawa, S. / Motoi, Y. et al. | 1996
- 64
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Thermodynamic equilibrium and mass transport coupled modelling of the chemical vapour deposition processRouch, H. / Pons, M. / Benezech, A. et al. | 1996
- 68
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Monte Carlo simulation of the variation of a binary alloy film composition due to intrinsic resputtering using different working gasesBauer, W. / Betz, G. / Bangert, H. et al. | 1996
- 73
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Phase transitions in ultrathin Al films on Si(111) surfacesGroeger, R. / Von Blanckenhagen, P. et al. | 1996
- 76
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Ultrathin film of Cu on -Fe~2O~3 (0001)Moeller, P. J. / Guo, Q. / Gui, L. et al. | 1996
- 80
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In situ observation of the in-plane structure of C60 thin films on metal substrates prepared by molecular beam depositionYoshida, Y. / Tanigaki, N. / Yase, K. et al. | 1996
- 84
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Difference of Si nodules precipitating from Al-X wt.% Si (X = 0.5 asymptotically equal to 3.3)Noritake, C. / Kondo, I. / Kondo, K. et al. | 1996
- 90
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Chemical state analysis of surface and interface segregates in coevaporated Al-Sn-O systemsKoever, L. / Barna, P. B. / Sanjines, R. et al. | 1996
- 94
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Thin film silicon compound growth mechanisms: CrSi~2/Si (001)Heck, C. / Kusaka, M. / Hirai, M. et al. | 1996
- 98
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Initial plasma oxidation kinetics of silicon: DC bias effectsKamioka, I. / Nakamura, K. G. / Kawabe, T. et al. | 1996
- 102
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Energy-selective electron cyclotron resonance plasma for controlled surface reaction processesO'Keeffe, P. / Mutoh, H. / Den, S. et al. | 1996
- 105
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The role of neutral oxygen radicals in the oxidation of Ag filmsSchmidt, A. A. / Offermann, J. / Anton, R. et al. | 1996
- 108
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Model for oxidation of TiN in ion-beam-assisted deposition processKubota, H. / Easterbrook, M. / Tokunaga, M. et al. | 1996
- 112
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Electron-beam-induced oxidation of indium particles embedded in a plasma polymer thin film matrixMueller, A.-D. / Heilmann, A. / Mueller, F. et al. | 1996
- 117
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In-depth concentration profile equation for cations in thin oxide film under the inverse logarithmic growth law of low-temperature oxidationIshikawa, I. et al. | 1996
- 120
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Oxygen adsorption and desorption induced surface phase transition of SrCuO~2(001)Ogasawara, H. / Sakuma, T. / Tsukakoshi, M. et al. | 1996
- 124
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Comments on the interdiffusivities evaluated by the decay rate of the satellite peak measured by X-ray diffractionNittono, O. / Ando, S. et al. | 1996
- 128
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Microstructure and preferred orientation in pure titanium films deposited by two-facing-target-type DC sputteringMiyoshi, T. / Haga, Y. / Nittono, O. et al. | 1996
- 132
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Columnar structures in Fe-based metallic multilayers prepared with the facing-target-type DC sputtering methodHaga, Y. / Nittono, O. et al. | 1996
- 136
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Large area deposition: Sputtering- and PCVD-systems and techniques for LCDHosokawa, N. et al. | 1996
- 143
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Remote deposition of scratch resistant films by use of slot antenna microwave plasma sourceKorzec, D. / Traub, K. / Werner, F. et al. | 1996
- 146
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Generation of large-area disk-shaped ECR plasma for diamond depositionMurai, A. / Ohya, I. / Yasui, T. et al. | 1996
- 149
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A rectangular large ECR plasma sourceTada, S. / Miyazawa, W. / Sakamoto, Y. et al. | 1996
- 152
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Sheet-shaped ECR plasma generation using permanent magnets for material processingNakase, K. / Shibata, T. / Yasui, T. et al. | 1996
- 155
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Plasma-enhanced CVD of TiN and Ti using low-pressure and high-density helicon plasmaTobe, R. / Sekiguchi, A. / Sasaki, M. et al. | 1996
- 159
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Thermoelectric power of polycrystalline Si films prepared by microwave plasma chemical vapour depositionYonekubo, S. / Kamimura, K. / Onuma, Y. et al. | 1996
- 162
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The enhancement of plasma confining effect at low gas pressure in the sputtering apparatus with floating potential cathodeTakahashi, T. / Iwatubo, S. / Asada, M. et al. | 1996
- 166
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Effects of magnet behind the target on discharge and sputtering characteristics in the sputtering apparatusTakahashi, T. / Iwatubo, S. / Asada, M. et al. | 1996
- 169
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New plasma source with an UHF (500 MHz) antennaNakagawa, Y. / Samukawa, S. / Ueyama, H. et al. | 1996
- 172
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Excited oxygen beam by R.F. type multicapillary ion sourceOkamoto, A. / Ogawa, S. / Ueno, T. et al. | 1996
- 175
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Thin film growth using a high-current, mass-separated low energy ion beam deposition systemSasaki, N. / Shimizu, S. / Ogata, S. et al. | 1996
- 179
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Transparent, conductive CuI films prepared by rf-dc coupled magnetron sputteringTanaka, T. / Kawabata, K. / Hirose, M. et al. | 1996
- 182
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TiN films prepared by unbalanced planar magnetron sputtering under control of photoemission of TiTominaga, K. / Inoue, S. / Howson, R. P. et al. | 1996
- 186
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Requirements for sputtering magnetic alloys on organic filmLippens, P. / Lievens, H. et al. | 1996
- 190
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A theory on planar magnetron dischargeMiura, T. / Asamaki, T. et al. | 1996
- 194
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ITO films prepared by facing target sputtering systemTominaga, K. / Ueda, T. / Ao, T. et al. | 1996
- 198
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Large area deposition of ITO films by cluster type sputtering systemIshibashi, K. / Watabe, K. / Hosokawa, N. et al. | 1996
- 202
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Crystal growth of ITO films prepared by DC magnetron sputtering on C filmMorikawa, H. / Sumi, H. / Kohyama, M. et al. | 1996
- 206
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The effects of oxygen content on electrical and optical properties of indium tin oxide films fabricated by reactive sputteringHonda, S. / Watamori, M. / Oura, K. et al. | 1996
- 209
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Ozone in reactive gas for producing tin-doped indium oxide films by DC reactive magnetron sputteringZahirul Alam, A. H. M. / Sasaki, K. / Hata, T. et al. | 1996
- 213
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High-rate deposition of SiO~2 by modulated DC reactive sputtering in the transition mode without a feedback systemOhsaki, H. / Tachibana, Y. / Shimizu, J. et al. | 1996
- 218
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Physical properties of evaporated molybdenum oxide filmsMiyata, N. / Suzuki, T. / Ohyama, R. et al. | 1996
- 223
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DC reactive sputtering of electro-conductive transparent tin suboxide using a Sn-O~2/Ar systemOhsaki, H. et al. | 1996
- 228
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Highly conductive transparent F-doped tin oxide films were prepared by photo-CVD and thermal-CVDIshida, T. / Tabata, O. / Park, J. I. et al. | 1996
- 232
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Thin film used to obtain a constant temperature lower than the ambientTazawa, M. / Jin, P. / Tanemura, S. et al. | 1996
- 235
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Characterization of niobium oxide electrochromic thin films prepared by reactive d.c. magnetron sputteringYoshimura, K. / Miki, T. / Iwama, S. et al. | 1996
- 239
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V~1~-~xMo~xO~2 thermochromic films deposited by reactive magnetron sputteringJin, P. / Tanemura, S. et al. | 1996
- 243
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Influence of deposition parameters on layer structure of Ag/C multilayer zone plates for use in hard X-ray regionTamura, S. / Ohtani, K. / Kamijo, N. et al. | 1996
- 246
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Modelling of lift-off sputter deposition and application to fabrication of a microlensSerikawa, T. / Shirai, S. et al. | 1996
- 249
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Study of optical transient relaxation of an Ag-O-Ba thin filmWu, J. L. / Wang, C. M. / Wu, Q. D. et al. | 1996
- 252
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Synthesis of -FeSi~2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substratesKatsumata, H. / Makita, Y. / Kobayashi, N. et al. | 1996
- 256
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Diamond (111) and (100) surface reconstructionsScholze, A. / Schmidt, W. G. / Bechstedt, F. et al. | 1996
- 260
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In situ optical characterization of carbon layers formed in the initial stages of diamond growthLongueville, J. L. / Moulin, S. / Bonnot, A. M. et al. | 1996
- 264
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Diamond film growth by pulse-modulated magnetoactive microwave plasma chemical vapour depositionHatta, A. / Suzuki, H. / Kadota, K.-I. et al. | 1996
- 267
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Electrical properties of boron-doped diamond films prepared by microwave plasma chemical vapour depositionDeguchi, M. / Kitabatake, M. / Hirao, T. et al. | 1996
- 271
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Ion implantation in predoped CVD diamondYagyu, H. / Deguchi, M. / Mori, Y. et al. | 1996
- 275
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Formation of paramagnetic defects in CVD diamond films (ESR study)Show, Y. / Nakamura, Y. / Izumi, T. et al. | 1996
- 279
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Ultrahigh particle density seeding with nanocrystal diamond particlesMakita, H. / Nishimura, K. / Jiang, N. et al. | 1996
- 282
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Electron microscopic analysis of chemical-vapour-deposited diamond surface by a novel methodJiang, N. / Hatta, A. / Won, J. et al. | 1996
- 285
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Study of diamond synthesized by simple hot-filament-assisted CVD in various conditionsKondo, H. / Endo, T. / Toyoshima, K. et al. | 1996
- 289
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Carbon nitride thin films deposited by the reactive ion beam sputtering techniqueKobayashi, S. / Nozaki, S. / Morisaki, H. et al. | 1996
- 294
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Fluorine-containing amorphous hydrogenated carbon filmsDurrant, S. F. / Landers, R. / Kleiman, G. G. et al. | 1996
- 298
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Oxidation of TiN, ZrN, TiZrN, CrN, TiCrN and TiN/CrN multilayer hard coatings reactively sputtered at low temperaturePanjan, P. / Navinsek, B. / Cvelbar, A. et al. | 1996
- 302
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The effects of T1 impurities on the properties of amorphous SiC:H films prepared by co-sputteringSaito, N. / Inui, Y. / Yamaguchi, T. et al. | 1996
- 305
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Improvement in the stability of amorphous SiN-BN films prepared by hybrid-plasma-enhanced chemical vapour depositionYasui, K. / Itoh, H. / Akahane, T. et al. | 1996
- 308
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Electrical, optical and structural properties of a-SiNGe:H films prepared by the r.f. glow-discharged decompositionNakaaki, I. / Saito, N. et al. | 1996
- 311
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Highly adhesive TiN thin films prepared on glass by the electron shower methodYumoto, H. / Kaneko, K. / Ishihara, M. et al. | 1996
- 314
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X-ray absorption and X-ray photoelectron spectroscopic studies of air-oxidized chromium nitride thin filmsEsaka, F. / Shimada, H. / Imamura, M. et al. | 1996
- 318
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Electron energy loss fine structure measurements of silicon nitride filmsTsukajima, J. / Arai, K. / Takatoh, S. et al. | 1996
- 321
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Effect of bias voltage on AlN thin films prepared by electron shower methodIshihara, M. / Yumoto, H. / Tsuchiya, T. et al. | 1996
- 324
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Effects of r.f. bias on cubic BN film synthesis by pulsed Nd:YAG laser depositionSuda, Y. / Nakazono, T. / Ebihara, K. et al. | 1996
- 327
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Boron nitride hard coatings by ion beam and vapor depositionNishiyama, S. / Takahashi, E. / Iwamoto, Y. et al. | 1996
- 331
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Tribological properties of r.f. PACVD amorphous B-N-C coatingsDekempeneer, E. H. A. / Meneve, J. / Kuypers, S. et al. | 1996
- 334
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Structural and electrical characterization of BC~2N thin filmsWatanabe, M. O. / Sasaki, T. / Itoh, S. et al. | 1996
- 337
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Stress-strain curves of sputtered thin films of Ti-NiIshida, A. / Takei, A. / Sato, M. et al. | 1996
- 340
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Effect of nitrogen gas pressure on residual stress in AlN films deposited by the planar magnetron sputtering systemKusaka, K. / Hanabusa, T. / Tominaga, K. et al. | 1996
- 344
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Residual stress and its thermal relaxation in TiN filmsMatsue, T. / Hanabusa, T. / Ikeuchi, Y. et al. | 1996
- 348
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Mechanisms of reduction of the internal stress in hydrogenated silicon oxide films prepared by Ar-H~2 sputteringTakahashi, H. / Nishiguchi, A. / Nagata, H. et al. | 1996
- 352
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Study on the internal stress in nickel films deposited onto silicon substrates by ion beam and vapor deposition (IVD)Kuratani, N. / Murakami, Y. / Imai, O. et al. | 1996
- 356
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Improvement of the adhesion to polyimide substrates of copper films prepared by an ion beam and vapor deposition (IVD) methodEbe, A. / Takahashi, E. / Iwamoto, Y. et al. | 1996
- 360
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Adhesion fracture of a two-layer Au evaporated film with C, W and Cr mixedHosaka, T. et al. | 1996
- 364
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Martensitic transformations in sputter-deposited Ti-Ni-Cu shape memory alloy thin filmsMiyazaki, S. / Hashinaga, T. / Ishida, A. et al. | 1996
- 368
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Electron transport in percolating gold filmsDumpich, G. / Friedrichowski, S. / Mikitisin, P. et al. | 1996
- 372
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Fabrication and characterization of Culn(S~xSe~1~-~x)~2 thin films deposited by r.f. sputteringYamamoto, Y. / Yamaguchi, T. / Demizu, Y. et al. | 1996
- 375
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(Cd,Zn) S thin films prepared by chemical bath deposition for photovoltaic devicesYamaguchi, T. / Yamamoto, Y. / Tanaka, T. et al. | 1996
- 379
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Novel GaAs photocathodes with alkali antimonide intermediate layers and caesium-oxygen adlayersGuo, T. et al. | 1996
- 383
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Negative resistance characteristics and memory phenomena in electroformed planar metal filmsNakashima, H. / Uozumi, K. et al. | 1996
- 386
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Photoluminescence analysis of CdS thin films under phase transitionLozada-Morales, R. / Zelaya-Angel, O. et al. | 1996
- 390
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Structure of gold-hydrocarbon composite thin films deposited using low-voltage plasma sputtering methodOkamoto, A. / Nosaka, T. / Yoshitake, M. et al. | 1996
- 393
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Preparation of Pd thin film photo-cathodes using ion-beam sputteringNosaka, T. / Yoshitake, M. / Okamoto, A. et al. | 1996
- 397
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High quality SiO~2 depositions from TEOS by ECR plasmaSano, K. / Hayashi, S. / Wickramanayaka, S. et al. | 1996
- 401
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Deposition of SiO~2 and Ta~2O~5 films by electron-beam-excited plasma ion platingToki, K. / Kusakabe, K. / Odani, T. et al. | 1996
- 404
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Surface properties of SiO~x monolayer photochemically formed on oxide semiconductorsTada, H. / Tanaka, M. et al. | 1996
- 409
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FTIR spectroscopy and AES study of water containment in SiO~2 thin filmsDemsar, A. / Colaric, B. / Rus, S. et al. | 1996
- 412
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Thin Si oxide films for MIS tunnel emitter by hollow cathode enhanced plasma oxidationUsami, K. / Takahashi, I. / Miyake, E. et al. | 1996
- 415
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Tantalum oxide films on silicon grown by tantalum evaporation in atomic oxygenHudner, J. / Hellberg, P.-E. / Kusche, D. et al. | 1996
- 419
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Growth and characterization of Ta~2O~5 thin films on Si by ion beam sputter depositionPark, K. S. / Lee, D. Y. / Kim, K. J. et al. | 1996
- 423
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Investigation of the effects of pumping speed and Ar/O~2 ratio on the transient time at mode transition in Ti-O~2 reactive sputteringKusano, E. / Kinbara, A. et al. | 1996
- 427
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Characteristics of rutile TiO~2 films prepared by r.f. magnetron sputtering at a low temperatureOkimura, K. / Maeda, N. / Shibata, A. et al. | 1996
- 431
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Surface morphology of TiO~x films prepared by an ion-beam-assisted reactive deposition methodSasase, M. / Miyake, K. / Yamaki, T. et al. | 1996
- 436
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The structural characteristics of VO~x films prepared by He-introduced reactive RF unbalanced magnetron sputteringMiyazaki, H. / Utsuno, F. / Shigesato, Y. et al. | 1996
- 441
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Velocity analysis of ablated particles in pulsed laser deposition of NiO filmTasaka, Y. / Kuroda, H. / Tanaka, M. et al. | 1996
- 445
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Preparation and some properties of nitrogen-mixed ZnO thin filmsSato, Y. / Sato, S. et al. | 1996
- 449
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Growing BaTiO~3 thin films on Si (100) with MgO-buffer layers by sputteringKim, S. / Hishita, S. et al. | 1996
- 453
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Transition metal oxide films prepared by pulsed laser deposition for atomic beam detectionTanaka, M. / Mukai, M. / Fujimori, Y. et al. | 1996
- 457
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c-axis-oriented PbTiO~3 thin films prepared by sputter-assisted plasma CVDMihara, T. / Mochizuki, S. / Makabe, R. et al. | 1996
- 460
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Oxidation of Zn films by irradiation with an excited metastable He beamKoyanagi, T. / Fujii, T. / Oi, R. et al. | 1996
- 463
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Preparation of PbTiO~3 thin films by ion-beam sputteringHashima, H. / Nakajima, S. / Suzuki, Y. et al. | 1996
- 466
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Selective gas detection by means of surface plasmon resonance sensorsMiwa, S. / Arakawa, T. et al. | 1996
- 469
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Magnetic structure and magnetoresistance of metallic multilayersShinjo, T. et al. | 1996
- 474
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Magnetic thin films for high-density recordingLodder, J. C. et al. | 1996
- 484
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Magnetic and structural properties of Fe films deposited by ion-beam sputtering with a high-energy assisted processIwatsubo, S. / Takahashi, T. / Naoe, C. M. et al. | 1996
- 488
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Growth kinetics of thin oxide layers; oxidation of Fe and Fe-N phases at room temperatureKooi, B. J. / Somers, M. A. J. / Mittemeijer, E. J. et al. | 1996
- 492
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Metastable spin-states and magnetic anisotropies of thin fcc Fe-layers on Cu(100)Lorenz, R. / Hafner, J. et al. | 1996
- 496
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Magnetoresistance and magnetic properties of ferromagnetic multilayersGondo, Y. / Suezawa, Y. et al. | 1996
- 499
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Growth of MnSb and Mn2Sb epitaxial layers on GaAs substrates by hot-wall epitaxyTatsuoka, H. / Kuwabara, H. / Oshita, M. et al. | 1996
- 503
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Preparation of films of (Tb,Dy)Fe~2 giant magnetostrictive alloy by ion beam sputtering process and their characterizationWada, M. / Uchida, H.-H. / Matsumura, Y. et al. | 1996
- 507
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Xe ^+-beam sputtered YBa2Cu30x thin films on Si wafersHatanaka, K. / Yokota, K. / Fujimoto, H. et al. | 1996
- 510
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The influence of Bi-sticking coefficient in the growth of Bi(2212) thin film by ion beam sputteringMigita, S. / Sakai, K. / Ota, H. et al. | 1996
- 513
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Digital laser etching of Bi-Sr-Ca-Cu-O superconducting thin filmsOohira, T. / Sakai, S. / Kasai, Y. et al. | 1996
- 517
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Comparison between Bi-superconductor thin films fabricated via co-deposition and layer-by-layer deposition by ion beam sputtering methodMori, Z. / Ota, H. / Migita, S. et al. | 1996
- 521
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Two-dimensionally oriented organic molecules as a substrate for vapor growth of zinc thin filmsLin, H. / Ando, H. / Seo, W. S. et al. | 1996
- 525
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Quantitative estimation of organic molecular beams by using quadrupole mass spectroscopyYase, K. / Yoshida, Y. et al. | 1996
- 529
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Changes in surface morphology and optical properties of polymers induced by ion implantationIkeyama, M. / Hayakawa, Y. / Tazawa, M. et al. | 1996
- 533
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Improvement of the partial discharge resistance of polymer films by coating with plasma-polymerized filmsKusabiraki, M. / Aozasa, M. et al. | 1996
- 536
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Plasma polymerized acetylene thin film by pulsed dischargeUchida, T. / Senda, K. / Vinogradov, G. K. et al. | 1996
- 539
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Time dependence of current of plasma polymerized polystyrene thin film upon exposure to NO~2 gasTakeda, S. et al. | 1996
- 542
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Direct observation of the crystallization in EL organic thin films by total reflection X-ray diffractometerOrita, K. / Hayashi, K. / Horiuchi, T. et al. | 1996
- 545
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Production of a bridge structure using diamond filmHoshikawa, K. / Kobayashi, K. / Watanabe, T. et al. | 1996
- 548
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Surface structure of a fluorinated thiol on Au (111) by scanning force microscopyMotomatsu, M. / Mizutani, W. / Nie, H.-Y. et al. | 1996
- 552
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Microstructure of spark-processed blue luminescent CdTe, GaSb, and InSbGudi�o-Martinez, A. / Falcony, C. / Vazquez-Lopez, C. et al. | 1996
- 556
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Surface geometry of MBE-grown GaAs(001) surface phasesXue, Q. / Hashizume, T. / Sakata, T. et al. | 1996
- 562
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Investigation of thin-film transistors using a combination of focused ion beam etching and cross-sectional transmission electron microscopy observationTsuji, S. / Tsujimoto, K. / Tsutsui, N. et al. | 1996
- 568
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N~2-plasma-nitridation effects on porous siliconYokomichi, H. / Masuda, A. / Yonezawa, Y. et al. | 1996
- 572
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Electrochemical nanolithography using scanning probe microscopy: fabrication of patterned metal structures on silicon substratesSugimura, H. / Nakagiri, N. et al. | 1996
- 576
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Instrumentation of a wafer inspection large sample atomic force microscopeYasutake, M. / Wakiyama, S. / Kitamura, M. et al. | 1996
- 580
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Simulation of atomic force microscopy image variations due to tip apex size: appearance of half spotsKomiyama, M. / Tazawa, K. / Tsujimichi, K. et al. | 1996
- 584
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Properties of nanophase grains of superconducting YBCO prepared by wet-type jet millKezuka, H. / Xi, Z. / Miyanaga, Y. et al. | 1996
- 588
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STM modification of MoS~2 in the nanometer-scale using a gas-solid reactionKohno, M. / Doi, T. / Hasegawa, T. et al. | 1996
- 591
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Reconstruction of heat treated 6H-SiC(0001) surfaces: AES, STMHirai, M. / Marumoto, Y. / Tsukamoto, T. et al. | 1996
- 594
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Scanning tunnelling microscopy study on dynamic structural formation in mixed fatty-acid monolayers at liquid/graphite interfaceHibino, M. / Sumi, A. / Hatta, I. et al. | 1996
- 598
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Molecular dynamics simulation of traction fluid molecules under EHL conditionYamano, H. / Shiota, K. / Miura, R. et al. | 1996
- 602
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Initial stage of C~6~0 film growth and reaction on Si (111) 7 X 7 and graphite surfaces studied by HREELS-STMSuto, S. / Kasuya, A. / Hu, C.-W. et al. | 1996
- 606
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Nanofabrication on n-GaAs surface using a scanning tunnelling microscope in a Ni-salt solutionKaneshiro, C. / Okumura, T. et al. | 1996
- 610
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Visible light emission from the porous alloyed Pt/Si contactsIchinohe, T. / Nozaki, S. / Morisaki, H. et al. | 1996
- 613
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High-resolution electron microscopy of Gd@C~8~2 metal fullerenes grown on MgO(001) surfacesTanaka, N. / Honda, Y. / Kawahara, M. et al. | 1996
- 618
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C60 single crystal films on GaAs(001) surfacesXue, Q. / Ling, Y. / Ogino, T. et al. | 1996
- 624
-
Friction-force microscopy of peptide filament: an application to estimate the size of a supramolecular unitMasai, J. / Shibata-Seki, T. / Ogawa, Y. et al. | 1996
- 630
-
New fast atom beam processing with separated masks for fabricating multiple microstructuresIchiki, K. / Hatakeyama, M. / Tanaka, S. et al. | 1996
- 634
-
Development of a mesoscale/nanoscale plasma generatorTerashima, K. / Howald, L. / Haefke, H. et al. | 1996
- 637
-
Scanning tunnelling microscope-induced oxidation of hydrogen passivated silicon surfacesKramer, N. / Van den Berg, M. R. / Schoenenberger, C. et al. | 1996
- 640
-
Nanoscale Al patterning on an STM-manipulated Si surfaceOno, T. / Hamanaka, H. / Kurabayashi, T. et al. | 1996
- 644
-
Development of UHV-STM/STS at 2 KHattori, K. / Iimori, T. / Komori, K. et al. | 1996
- 647
-
Development of a near-field optical system for investigating thin organic filmsNagahara, L. A. / Tokumoto, H. et al. | 1996
- 651
-
Micromachine-actuator rotated by rarefied gas effectsKasahara, K. / Ota, M. / Sakamoto, M. et al. | 1996