OPTICAL MATERIALS -AMSTERDAM-
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 731
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Switching light on a silicon chipLipson, Michal et al. | 2004
- 740
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Tunable photonic bandgap structures for optical interconnectsWeiss, S.M. / Haurylau, M. / Fauchet, P.M. et al. | 2004
- 745
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Optical gain in different silicon nanocrystal systemsFauchet, P.M. / Ruan, J. / Chen, H. et al. | 2004
- 750
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Optical gain in nanocrystalline silicon: comparison of planar waveguide geometry with a non-waveguiding ensemble of nanocrystalsLuterová, K. / Cazzanelli, M. / Likforman, J.-P. et al. | 2004
- 756
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Comparison between strip and rib SOI microwaveguides for intra-chip light distributionVivien, L. / Grillot, F. / Cassan, E. et al. | 2004
- 763
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Birefringence characterization of mono-dispersed silicon nanocrystals planar waveguidesNavarro-Urrios, D. / Riboli, F. / Cazzanelli, Massimo et al. | 2004
- 769
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Instituto de Física #8220Gleb Wataghin#8221, Unicamp, C.P. 6165, 13083-970 Campinas SP, Brazil| 2005
- 769
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Optical gain in a-SiNx:H〈Nd〉Tessler, L.R. / Biggemann, D. et al. | 2004
- 773
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Instituto de Física #8220Gleb Wataghin#8221, UNICAMP, C.P. 6165, 3083-970 Campinas, SP, Brazil| 2005
- 773
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Time-resolved photoluminescence in a-SiNx:H〈Nd〉 planar waveguides: evidence for stimulated emissionBiggemann, Daniel / Tessler, Leandro R. et al. | 2004
- 776
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Recent progress in integrated waveguides based on oxidized porous siliconBalucani, M. / Bondarenko, V. / Klusko, A. et al. | 2004
- 781
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Photoluminescence from an active planar optical waveguide made of silicon nanocrystals: dominance of leaky substrate modes in dissipative structuresOstatnický, T. / Valenta, J. / Pelant, I. et al. | 2004
- 787
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Wavelength tunable thermo-optic filter using buckling effect of etalon composed poly-Si/SiO2 multi-layersPark, Hun-Yong / Park, Chong-Hun / Hwang, Byung-Chul et al. | 2004
- 792
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Ge islands and photonic crystals for Si-based photonicsBoucaud, P. / Li, X. / Kurdi, M. El et al. | 2004
- 799
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Elemental devices, circuits and processes for a monolithic Si/III–V–N alloy OEICYonezu, H. / Furukawa, Y. / Abe, H. et al. | 2004
- 799
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Elemental devices, circuits and processes for a monolithic Si-III#8211V#8211N alloy OEIC| 2005
- 804
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Microring and microdisk optical resonators using silicon nanocrystals and erbium prepared using silicon technologyGardner, Donald S. / Brongersma, Mark L. et al. | 2004
- 812
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Two-dimensionally-patterned silicon nanocrystal arraysMeldrum, A. / Hryciw, A. / Buchanan, K.S. et al. | 2004
- 818
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Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layerLobanov, D.N. / Novikov, A.V. / Vostokov, N.V. et al. | 2004
- 822
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UHV-CVD growth and annealing of thin fully relaxed Ge films on (001)SiHalbwax, M. / Rouviere, M. / Zheng, Y. et al. | 2004
- 827
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Stripes of 2D photonic crystal obtained from macroporous siliconAstrova, E.V. / Borovinskaya, T. / Tolmachev, V.A. et al. | 2004
- 831
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1D photonic crystal fabricated by wet etching of siliconTolmachev, V.A. / Astrova, E.V. / Pilyugina, J.A. et al. | 2004
- 836
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Photoluminescence studies of Sn quantum dots in Si grown by MBEKarim, A. / Hansson, G.V. / Ni, W.-X. et al. | 2004
- 841
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Bandstructure analysis of strain compensated Si/SiGe quantum cascade structuresSigg, H. / Falub, C.V. / Müller, E. et al. | 2004
- 846
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Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrateChriqui, Y. / Saint-Girons, G. / Isella, G. et al. | 2004
- 851
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Optical cavities for Si/SiGe tetrahertz quantum cascade emittersKelsall, R.W. / Ikonic, Z. / Harrison, P. et al. | 2004
- 855
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Growth and structural characterisation of Si/SiGe heterostructures for optoelectronic applicationsLi, X.B. / Neave, J.H. / Norris, D.J. et al. | 2004
- 859
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Faculté des Sciences de Monastir, Département de Physique, Unité de Physique des Solides 99-UR-13-19, Boulevard de l#8217Environnement, 5019 Monastir, Tunisia| 2005
- 859
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Wave function engineering in W designed strained-compensated Si/Si1−xGex/Si type II quantum wells for 1.55μm optical propertiesSfina, N. / Lazzari, J.-L. / Ben Zid, F. et al. | 2004
- 864
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Photoconductive gain of SiGe/Si quantum well photodetectorsLiu, Fei / Tong, Song / Kim, Hyung-jun et al. | 2004
- 868
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Fabrication and optical properties of Er-doped multilayers Si-rich SiO2/SiO2: size control, optimum Er–Si coupling and interaction distance monitoringGourbilleau, F. / Madelon, R. / Dufour, C. et al. | 2004
- 868
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Fabrication and optical properties of Er-doped multilayers Si-rich SiO2-SiO2: size control, optimum Er#8211Si coupling and interaction distance monitoring| 2005
- 876
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Erbium–Silicon–Oxide crystalline films prepared by MOMBEMasaki, K. / Isshiki, H. / Kimura, T. et al. | 2004
- 876
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Erbium#8211Silicon#8211Oxide crystalline films prepared by MOMBE| 2005
- 880
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Erbium–silicon–oxide nano-crystallite waveguide formation based on nano-porous siliconKimura, T. / Ueda, K. / Saito, R. et al. | 2004
- 880
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Erbium#8211silicon#8211oxide nano-crystallite waveguide formation based on nano-porous silicon| 2005
- 884
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Time dependence and excitation spectra of the photoluminescence emission at 1.54μm in Si-nanocluster and Er co-doped silicaFalconieri, M. / Borsella, E. / Enrichi, F. et al. | 2004
- 884
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Time dependence and excitation spectra of the photoluminescence emission at 1.54#956m in Si-nanocluster and Er co-doped silica| 2005
- 890
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Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structuresYablonskiy, A.N. / Klik, M.A.J. / Andreev, B.A. et al. | 2004
- 894
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Photoluminescence from erbium incorporated in oxidized porous siliconBondarenko, V. / Kazuchits, N. / Balucani, M. et al. | 2004
- 900
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Site of Er ions in Er-implanted silica containing Si nanoclustersMaurizio, C. / D’Acapito, F. / Priolo, F. et al. | 2004
- 904
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Study of the energy transfer mechanism in different glasses co-doped with Si nanoaggregates and Er3+ ionsEnrichi, F. / Mattei, G. / Sada, C. et al. | 2004
- 910
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Luminescent properties of Er and Si co-implanted silicatesPellegrino, P. / Garrido, B. / Lebour, Y. et al. | 2004
- 915
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Influence of Er concentration on the emission properties of Er-doped Si-rich silica films obtained by reactive magnetron co-sputteringCarrada, M. / Gourbilleau, F. / Dufour, C. et al. | 2004
- 920
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Enhancement of photoresponse properties of #946-FeSi2-Si heterojunctions by Al doping| 2005
- 920
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Enhancement of photoresponse properties of β-FeSi2/Si heterojunctions by Al dopingMaeda, Yoshihito / Terai, Yoshikazu / Itakura, Masaru et al. | 2004
- 925
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Department of Materials Sciences, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan| 2005
- 925
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Photoluminescence enhancement in impurity doped β-FeSi2Terai, Yoshikazu / Maeda, Yoshihito et al. | 2004
- 929
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Studies of Ga diffusion and the elimination of pinholes in Ga-doped #946-FeSi2 films prepared by MBE| 2005
- 929
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Studies of Ga diffusion and the elimination of pinholes in Ga-doped β-FeSi2 films prepared by MBEKuroda, Ryo / Liu, Zhengxin / Fukuzawa, Yasuhiro et al. | 2004
- 935
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Ga-doping for β-FeSi2 films prepared by molecular beam epitaxyFukuzawa, Yasuhiro / Kuroda, Ryo / Liu, Zhengxin et al. | 2004
- 935
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Ga-doping for #946-FeSi2 films prepared by molecular beam epitaxy| 2005
- 942
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Doping of β-FeSi2 films with boron and arsenic by sputtering and its application for optoelectronic devicesLiu, Zhengxin / Osamura, Masato / Ootsuka, Teruhisa et al. | 2004
- 942
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Doping of #946-FeSi2 films with boron and arsenic by sputtering and its application for optoelectronic devices| 2005
- 948
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Luminescence characteristics of Ge nanocrystals embedded in SiO2 matrixRay, S.K. / Das, K. et al. | 2004
- 953
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Luminescence of polymorphous silicon carbon alloysSuendo, Veinardi / Patriarche, Gilles / Cabarrocas, Pere Roca i et al. | 2004
- 958
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Blue emission in mesoporous silica excited by synchrotron radiationAnedda, A. / Carbonaro, C.M. / Clemente, F. et al. | 2004
- 962
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I–V characteristics of structures with porous silicon in electrolyteMkhitaryan, Z.H. / Shatveryan, A.A. / Adamyan, A.Z. et al. | 2004
- 962
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Department of Physics of Semiconductors and Microelectronics, Yerevan State University, 1, Alex Manoukian, 375049 Yerevan, Armenia| 2005
- 967
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Silicon-based light emission after ion implantationKittler, M. / Arguirov, T. / Fischer, A. et al. | 2004
- 973
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Single dot optical spectroscopy of silicon nanocrystals: low temperature measurementsSychugov, Ilya / Juhasz, Robert / Galeckas, Augustinas et al. | 2004
- 977
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Effect of “buffer layers” on the optical properties of silicon nanocrystal superlatticesGlover, M. / Meldrum, A. et al. | 2004
- 977
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Effect of #8220buffer layers#8221 on the optical properties of silicon nanocrystal superlattices| 2005
- 983
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Study of the photoluminescence of amorphous and crystalline silicon clusters in SiOx thin filmsRinnert, H. / Jambois, O. / Vergnat, M. et al. | 2004
- 983
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Laboratoire de Physique des Matériaux, (UMR CNRS No 7556), Université Henri Poincaré Nancy 1, B.P. 239, 54506 Vand#339uvre-lès-Nancy Cedex, France| 2005
- 988
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Oxidation effects on the photoluminescent properties of Si nanocrystalline thin filmsJeon, Kyung Ah / Kim, Jong Hoon / Kim, Gun Hee et al. | 2004
- 991
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Optical properties of silicon nanocrystalline thin films grown by pulsed laser depositionKim, Jong Hoon / Jeon, Kyung Ah / Kim, Gun Hee et al. | 2004
- 995
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Electron hole liquid in silicon single quantum wellsPauc, N. / Calvo, V. / Eymery, J. et al. | 2004
- 1000
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Photoluminescence of nanometric single silicon quantum wellsPauc, N. / Calvo, V. / Eymery, J. et al. | 2004
- 1004
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Simultaneous observation of “Self Trapped Exciton” and Q-confined exciton luminescence emission in silicon nanocrystalsDe la Torre, J. / Bremond, G. / Souifi, A. et al. | 2004
- 1004
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Simultaneous observation of #8220Self Trapped Exciton#8221 and Q-confined exciton luminescence emission in silicon nanocrystals| 2005
- 1008
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The electronic and optical properties of silicon nanoclusters: absorption and emissionLuppi, Eleonora / Degoli, Elena / Cantele, G. et al. | 2004
- 1014
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Towards controllable optical properties of silicon based nanoparticles for applications in opto-electronicsTrave, E. / Bello, V. / Enrichi, F. et al. | 2004
- 1020
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Characterisation of room temperature blue emmiting Si/SiO2 multilayersModreanu, M. / Aperathitis, E. / Androulidaki, M. et al. | 2004
- 1026
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Influence of temperature and hydrogen rate on silicon incorporation in silica films by reactive magnetron co-sputteringChausserie, S. / Khalfaoui, N. / Dufour, C. et al. | 2004
- 1031
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Correlation between electroluminescence and structural properties of Si nanoclustersIrrera, A. / Iacona, F. / Franzò, G. et al. | 2004
- 1041
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Efficient silicon light emitting diodes by boron implantation: the mechanismSun, J.M. / Dekorsy, T. / Skorupa, W. et al. | 2004
- 1046
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Colloidal suspensions of silicon nanocrystals: from single nanocrystals to photonic structuresValenta, J. / Janda, P. / Dohnalová, K. et al. | 2004
- 1050
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On the mechanism of electroluminescence excitation in Er-doped SiO2 containing silicon nanoclustersSun, J.M. / Skorupa, W. / Dekorsy, T. et al. | 2004
- 1055
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Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applicationsRebohle, L. / Gebel, T. / Yankov, R.A. et al. | 2004
- 1059
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Two- and multi-terminal CMOS/BiCMOS Si LED’sdu Plessis, Monuko / Aharoni, Herzl / Snyman, Lukas W. et al. | 2004
- 1059
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Two- and multi-terminal CMOS-BiCMOS Si LED#8217s| 2005
- 1064
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Optical signal and image processing device optimized for optical readoutVieira, M. / Fernandes, M. / Louro, P. et al. | 2004
- 1069
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p#8211i#8211n flexible imaging devices with optical readout| 2005
- 1069
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p–i–n flexible imaging devices with optical readoutLouro, P. / Vieira, M. / Fernandes, M. et al. | 2004
- 1074
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Photoluminescence and electroluminescence of amorphous SiOx films prepared by reactive evaporation of silicon with oxygenJambois, O. / Molinari, M. / Rinnert, H. et al. | 2004
- 1074
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Laboratoire de Physique des Matériaux, (U.M.R. C.N.R.S. 7556), Université Henri Poincaré Nancy 1, B.P. 239, 54506 Vand#339uvre-lés-Nancy Cedex, France| 2005
- 1079
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Monolithic and hybrid near infrared detection and imaging based on poly-Ge photodiode arraysMasini, G. / Colace, L. / Petulla, F. et al. | 2004
- 1084
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Porous silicon optical devices for sensing applicationsTorres-Costa, V. / Agulló-Rueda, F. / Martín-Palma, R.J. et al. | 2004
- 1088
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Super linear position sensitive detectors using MIS structuresÁguas, H. / Pereira, L. / Costa, D. et al. | 2004
- 1093
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Near-infrared surface plasmon resonance sensing on a Si platform with nanoparticle-based signal enhancementPatskovsky, Sergiy / Kabashin, Andrei V. / Meunier, Michel et al. | 2004
- 1097
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Ge dot mid-infrared photodetectorsTong, Song / Lee, Joo-Young / Kim, Hyung-Jun et al. | 2004
- 1101
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Author Index to Vol. 27, No. 5| 2005
- CO2
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Editorial board| 2005
- v
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PrefaceFauchet, P.M. / Gardner, D.S. / Priolo, F. et al. | 2004
- vi
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Organizers/Sponsors| 2005
- vii
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Contents list| 2005