Microelectronic engineering : an international journal of semiconductor manufacturing technology
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 3
-
Broaden the use of technology - Issues at stake for EuropeForster, H. et al. | 1995
- 3
-
Broaden the use of technologyForster, H. et al. | 1996
- 11
-
The National Technology Roadmap for Semiconductors and SEMATECH future directionsHarrell, S. et al. | 1995
- 17
-
Prospect and status of MITI's quantum functional device projectOkayama, S. et al. | 1995
- 27
-
Technology development within the JESSI programme and future prospectivesTischer, P. et al. | 1995
- 31
-
Application of electron beam lithography for downscaling of SOI-bipolar and BiCMOSSauter, M. et al. | 1995
- 35
-
Impact of proximity correction on device yield in electron-beam definition of MSM detectorsMaile, B.E. et al. | 1995
- 41
-
E-beam lithography by using an STEM with integrated laser interferometer stageHübner, B. et al. | 1995
- 45
-
Microcolumn based low energy e-beam writingStebler, C. et al. | 1995
- 49
-
A special method to create gratings of variable line density by low voltage electron beam lithographyNiemann, B. et al. | 1995
- 53
-
Electron beam lithography over topographyBauch, L. et al. | 1995
- 57
-
Low energy electron proximity printing using a self-assembled monolayer resistDavid, C. et al. | 1995
- 61
-
Performance analysis and optimal parameter selection for PYRAMIDCook, B.D. et al. | 1995
- 65
-
A visualisation and proximity correction tool for submicron e-beam lithographyFretwell, T.A. et al. | 1995
- 69
-
Electron-beam microcolumn fabrication and testingDespont, M. et al. | 1995
- 73
-
Development of a 100 keV electron beam nanolithography systemMimura, R. et al. | 1995
- 77
-
Advanced application of hierarchy reorganisation in e-beam lithographyRosenbusch, A. et al. | 1995
- 81
-
DUV-e-beam Mix and Match lithography in a single mask for fabricating a multiterminal SQUID deviceVleeming, B.J. et al. | 1995
- 87
-
I-line to DUV transition for critical levelsShamaly, J.J. et al. | 1995
- 95
-
Enhancement of submicron optical lithography performance using phase-only pupil filtersChen, H.Y. et al. | 1995
- 99
-
Variable numerical aperture and partial coherence studies: Process window and proximity effectsAndré, S. et al. | 1995
- 103
-
The assessment of nonuniform pupils in photolithographyCampos, J. et al. | 1995
- 107
-
Microlens lithography: A new approach for large display fabricationVölkel, R. et al. | 1995
- 111
-
Linewidth control for 0.25 micron gate patterningFarrar, N.R. et al. | 1995
- 115
-
Optical proximity correction: Mask pattern-generation challengesJonckheere, R. et al. | 1995
- 119
-
Reduction of CD variance by using optical proximity correction for patterning with DUV phase shift maskZhang, H. et al. | 1995
- 123
-
New system for fast submicron optical direct writingSeltmann, R. et al. | 1995
- 129
-
Effect of stepper lens operating conditions on proximity effects in DUV optical lithography down to 250 nmArthur, G. et al. | 1995
- 133
-
Investigation of photoresist-specific optical proximity effectArthur, G. et al. | 1995
- 137
-
Fabrication of waveguide tapers by semitransparent mask photolithographyWengelink, J. et al. | 1995
- 141
-
Optical proximity correction for 0.3 mm i-line lithographyYen, A. et al. | 1995
- 141
-
Optical proximity correction for 0.3 m i-line lithographyYen, A. / Tzviatkov, P. / Wong, A. et al. | 1996
- 145
-
Characterization of embedded phase shift masks by reflectance-transmittance measurementCui, Z. et al. | 1995
- 149
-
New concept for applying edge line phase-shifting masks to arbitrary mask layoutsWeiss, M. et al. | 1995
- 153
-
Dimensional control of sub-half-micron polysilicon gate structures at DUV exposureMartin, B. et al. | 1995
- 157
-
TiNx as a new embedded material for attenuated phase shift maskLoong, W.-A. et al. | 1995
- 161
-
Neural networks application for OPC (optical proximity correction) in mask makingJedrasik, P. et al. | 1995
- 165
-
Excimer laser with high repetition rate for DUV lithographyPätzel, R. et al. | 1995
- 171
-
An overview of X-ray lithographyOhki, S. et al. | 1995
- 179
-
Large-field (> 20 x 25 mm2) replication by EUV lithographyHaga, T. et al. | 1995
- 183
-
Extreme UV lithography: A new laser plasma target concept and fabrication of multilayer reflection masksBijkerk, F. et al. | 1995
- 187
-
Fabrication of 200 nm field effect transistors by X-ray lithography using a laser-plasma X-ray sourceReeves, C.M. et al. | 1995
- 191
-
Proximity X-ray lithography as a quick replication technique in nanofabrication: Recent progress and perspectivesChen, Y. et al. | 1995
- 195
-
Exposure latitude and CD control study for additively patterned X-ray mask with GBit DRAM complexityBaciocchi, M. et al. | 1995
- 199
-
Study on deflection of X-ray mask membrane in stepper motionMitsui, S. et al. | 1995
- 203
-
Patterning characteristics under small vibrations of the mask and wafer in SR lithographyFukuda, M. et al. | 1995
- 203
-
Pattering characteristics under small vibrations of the mask and wafer in SR lithographyFukuda, M. / Koyama, N. / Tsuyuzaki, H. et al. | 1996
- 207
-
Improvement of diamond X-ray mask membrane: Optical transmittance, surface roughness and irradiation durabilityTsuboi, S. et al. | 1995
- 211
-
Etch characteristics of an amorphous refractory absorberResnick, D.J. et al. | 1995
- 215
-
Investigation of the adhesive strength of PMMA structures on substrates obtained by deep X-ray lithographySchmidt, A. et al. | 1995
- 219
-
Sub-100 nm space pattern replication by using a cross-sectioned X-ray maskHoriuchi, T. et al. | 1995
- 223
-
Predicting out-of-plane distortions during X-ray mask fabricationLaird, D. et al. | 1995
- 227
-
Modeling of in-plane distortions due to variations in absorber stressLaudon, M. et al. | 1995
- 231
-
Advanced plasma X-ray source using multi-reflecting optics: Recent resultsKang, S.X. et al. | 1995
- 235
-
Aligned double exposure in deep X-ray lithographySchmidt, A. et al. | 1995
- 241
-
Masked ion beam lithography for proximity printingHammel, E. et al. | 1995
- 245
-
Cluster beams from a Co-Nd liquid alloy ion sourceBischoff, L. et al. | 1995
- 249
-
Comparison between different imaging modes in focussed ion beam instrumentsJiang, X.R. et al. | 1995
- 253
-
3D defect distribution induced by focused ion beam irradiation at variable temperatures in a GaAs/GaA1As multi quantum well structureGierak, J. / Assayag, G. B. / Schneider, M. et al. | 1996
- 253
-
3D defect distribution induced by focused ion beam irradiation at variable temperatures in a GaAs-GaAlAs multi quantum well structureGierak, J. et al. | 1995
- 257
-
Silicon stencil masks for masked ion beam lithography proximity printingRangelow, I.W. et al. | 1995
- 261
-
New graphite liquid metal ion source geometry developed for corrosive metal. Application to an aluminium ion sourceGierak, J. et al. | 1995
- 267
-
Thermal and mechanical analysis of photoresist and silylated photoresist films: Application to AZ 5214TMGogolides, E. et al. | 1995
- 271
-
Free volume effects in chemically amplified DUV positive resistsPain, L. et al. | 1995
- 275
-
Application of Plasma Polymerized Methylsilane in an all dry resist process for 193 and 248 nm lithographyJoubert, O. et al. | 1995
- 279
-
Lithographic and pattern transfer of a novel deep-UV photoresist: ARCH2Falcigno, P. et al. | 1995
- 283
-
Bottom anti-reflective coatings: Control of thermal processingSchiltz, A. et al. | 1995
- 287
-
Sensitivity-enhanced dry development process for VUV and EUV lithography using graft polymerizationOgawa, T. et al. | 1995
- 291
-
Broad-band extreme ultraviolet lithography with a wet-silylated and dry-developed resistOizumi, H. et al. | 1995
- 295
-
Determination of acid diffusion and energy deposition parameters by point e-beam exposure in chemically amplified resistsRaptis, I. et al. | 1995
- 301
-
Realisation of irregular quarter-micron patterns in thick resists using an advanced e-beam sensitive TSI processIrmscher, M. et al. | 1995
- 305
-
Electron beam lithography using chemically-amplified resist: Resolution and profile controlKudryashov, V.A. et al. | 1995
- 309
-
Evaluation of chemically amplified deep UV resist for micromachining using e-beam lithography and dry etchingHudek, P. et al. | 1995
- 313
-
Novel approach to simulation of the silylation bake in the DESIRE processWeiss, M. et al. | 1995
- 317
-
Four-layer resist process for asymmetric gate recessGrundbacher, R. et al. | 1995
- 321
-
Evaluation of DUV positive resist Shipley XP9493 for e-beam lithographyTomalak, E. et al. | 1995
- 327
-
High resolution studies on Hoechst AZ PN114 chemically amplified resistMacintyre, D. et al. | 1995
- 333
-
Influence of the nature of the mask on polysilicon gate patterning in high density plasmasBell, F.H. et al. | 1995
- 337
-
Temperature effects on tungsten etchingGat, E. et al. | 1995
- 341
-
Investigations of Si/SiGe heterostructures patterned by reactive ion etchingKoester, T. / Hadam, B. / Gondermann, J. et al. | 1996
- 341
-
Investigation of Si-SiGe heterostructures patterned by reactive ion etchingKöster, T. et al. | 1995
- 345
-
Experimental study and computer simulation of aspect ratio dependent effects observed in silicon reactive ion etchingYunkin, V.A. et al. | 1995
- 349
-
The dependence of nanostructure etch rates on feature sizeZachariasse, J.M.F. et al. | 1995
- 353
-
The influence of ion beam parameters on pattern resolutionJager, P.W.H.de et al. | 1995
- 357
-
Energy- and angular distributions of argon neutrals and their influence on etching profilesBörnig, K. et al. | 1995
- 361
-
Mechanistic framework for dry etching, beam assisted etching and tribochemical etchingDelft, F.C.M.J.M.van et al. | 1995
- 365
-
Laminated dry film resist for microengineering applicationsZhu, J. et al. | 1995
- 369
-
Template patterning of YBa2Cu3O7Harg, A.J.M.van der et al. | 1995
- 375
-
Atom electronics: A proposal nano-scale devices based on atom/molecule switchingWada, Y. et al. | 1996
- 375
-
Atom electronics: A proposal of nano-scale devices based on atom-molecule switchingWada, Y. et al. | 1995
- 383
-
Atom lithography using light forcesDrodofsky, U. et al. | 1995
- 387
-
Nanoscale modification of phase change materials with near-field lightImura, R. et al. | 1995
- 391
-
Nanofabrication on gold surface with scanning tunneling microscopyLebreton, C. et al. | 1995
- 395
-
Ultra sharp crystalline silicon tip array used as field emitterMehr, W. et al. | 1995
- 399
-
Step edge cut off - A new fabrication process for metal-based single electron devicesAltmeyer, S. et al. | 1995
- 403
-
Novel nanofabrication method of high temperature metallic Coulomb blockade devicesVieu, C. et al. | 1995
- 407
-
Electron beam lithography and ion implantation techniques for fabrication of high-Tc Josephson junctionsBarth, R. et al. | 1995
- 411
-
Electron beam nanofabrication by inorganic resist for MIM tunnel junctionKomuro, M. et al. | 1995
- 415
-
Accurate nano-EB lithography for 40 nm gate MOSFETsOchiai, Y. et al. | 1995
- 419
-
Nano-scale fluctuations in electron beam resist pattern evaluated by atomic force microscopyNagase, M. et al. | 1995
- 423
-
3 nm NiCr wires made using electron beam lithography and PMMA resistCumming, D.R.S. et al. | 1995
- 427
-
A combined objective lens for electrons and ionsJager, P.W.H.de et al. | 1995
- 431
-
Characterisation of sub-100 mn MOS transistors processed by optical lithography and a sidewall-etchback techniqueHorstmann, J. T. / Hilleringman, U. / Goser, K. et al. | 1996
- 431
-
Characterisation of sub-100 nm MOS transistors processed by optical lithography and a sidewall-etchback techniqueHorstmann, J.T. et al. | 1995
- 435
-
Fabrication of periodical nanostructures using electron interference fringesFujita, S. et al. | 1995
- 439
-
Nanoscale engineering using controllable formation of ultra-thin cracks in heterostructuresPrinz, V.Ya et al. | 1995
- 443
-
Elaboration of silicon clusters by CVD of silane or laser ablationRamonda, M. et al. | 1995
- 447
-
Bilayer resist process for exposure with low-voltage electrons (STM lithography)Leuschner, R. et al. | 1995
- 451
-
Ultrasmall Pt clusters for single electron tunneling studiesKreupl, F. et al. | 1995
- 455
-
Nanofabrication in adsorbed layer of silver ions on TiO2 films by voltage pulses in STMGurin, V.S. et al. | 1995
- 459
-
A 0.10 mm NMOSFET, made by hybrid lithography (e-beam-DUV), with indium pocket and specific gate reoxidation processBenistant, F. et al. | 1995
- 459
-
A 0.10 m NMOSFET, made by hybrid lithography (e-beam/DUV), with indium pocket and specific gate reoxidation processBenistant, F. / Tedesco, S. / Guegan, G. et al. | 1996
- 463
-
Photoluminescence from oxidized silicon nano-linesNamatsu, H. et al. | 1995
- 467
-
A novel technique for the fabrication of sub-20 nm metallic wiresHoole, A.C.F. et al. | 1995
- 471
-
Electrical and field emission properties of nanocrystalline materials fabricated by electron-beam induced depositionSchössler, C. et al. | 1995
- 475
-
Investigation of growth interruption in the UHV total vacuum process for buried quantum structuresWakaya, F. et al. | 1995
- 479
-
Nanofabrication with a full control of the electrodes and quantum well dimensionalities: 3D-0D resonant tunnelling through quantum boxesFaini, G. et al. | 1995
- 483
-
Fabrication of micro-sensors integrated with single nanometer magnetic particles: Detection of the reversal of the magnetizationFaini, G. et al. | 1995
- 489
-
The live neuron - A complex intricated microprocessor system: The future of technologyTyc-Dumont, S. et al. | 1995
- 497
-
Fabrication technologies for microsystems utilizing photoetchable glassDietrich, T.R. et al. | 1995
- 505
-
Sub-micron LIGA process for movable microstructuresBörner, M.W. et al. | 1995
- 509
-
Use of e-beam written, reactive ion etched, phase masks for the generation of novel photorefractive fibre gratingsSwanton, A. et al. | 1995
- 513
-
Nanostructuring high resolution phase zone plates in nickel and germanium using cross-linked polymersSchliebe, T. et al. | 1995
- 517
-
Focused ion beam processing for microscale fabricationWalker, J.F. et al. | 1995
- 523
-
Micromachined field emission devicesHofmann, W. et al. | 1995
- 527
-
Planar very high aspect ratio microstructures for large loading forcesJazairy, A. et al. | 1995
- 527
-
Planar very high aspect ration microstructures for large loading forcesJazairy, A. / MacDonald, N. C. et al. | 1996
- 531
-
Initial fabrication of a micro-induction gyroscopeWilliams, C.B. et al. | 1995
- 535
-
Micromachined ultrasonic air transducers (MUTs)Spoliansky, D. et al. | 1995
- 539
-
Evaluation of the dry resist Vinyl-T8 and its application to optical microlensesKoops, H.W.P. et al. | 1995
- 543
-
PMMA as an X-ray resist for micro-machining application: Latent image formation and thickness lossesVladimirsky, Y. et al. | 1995
- 547
-
Applications of polyimide membranes to MEMS technologyShearwood, C. et al. | 1995
- 551
-
Advanced resist processing for thick photoresist applicationsCullmann, E. et al. | 1995
- 555
-
Sub-micron niobium electrodes for dielectrophoresis applicationsLeoni, R. et al. | 1995
- 559
-
One-level gray-tone design - Mask data preparation and pattern transferReimer, K. et al. | 1995
- 563
-
Micromachined microdevices and microinstrumentsMacDonald, N.C. et al. | 1995
- 567
-
Application of the SEMSpec electron-beam inspection system to in-process defect detection of semiconductor wafersCass, T. R. / Hendricks, D. / Jau, J. et al. | 1996
- 567
-
Application of the SEMSpec electron-beam inspection system to in-process defect detection on semiconductor wafersCass, T.R. et al. | 1995
- 571
-
Reflection near field optical microscopy of latent images in photoresistsSchiavone, P. et al. | 1995
- 575
-
Optimization of FIB methods for phase shift mask defect repairCui, Z. et al. | 1995
- 579
-
Indirect tip fabrication for scanning probe microscopyBoisen, A. et al. | 1995
- 579
-
Indirect tip fabrication for scanning probe microcopyBoisen, A. / Rasmussen, J. P. / Hansen, O. et al. | 1996
- 583
-
Investigations into the spectral behaviour of wafers and the CD measurementHild, R. et al. | 1995
- 587
-
Accuracy in critical dimension measurements on integrated circuits and photomasksMirandé, W. et al. | 1995
- 593
-
Application of contact angle measurements to lithographic processesFadda, E. et al. | 1995
- 597
-
A new application-specific FIB system architectureTalbot, C.G. et al. | 1995
- 605
-
The INCAM system: An adequate IC manufacturing concept for the 21st centuryDoche, C. et al. | 1995
- 607
-
Author Index| 1995
-
Preface| 1995