Superlattices and microstructures : a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 263
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Well-width dependence of interface roughness scattering in GaAs-Ga1-xAlx-As quantum wells (sm960458)Balkan, N. et al. | 1997
- 263
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Well-width dependence of interface roughness scattering in GaAs/Ga~1~-~xAl~x/As quantum wellsBalkan, N. / Gupta, R. / Cankurtaran, M. et al. | 1997
- 273
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Impurity bound polaron in a magnetic field in quantum-well structuresLiu, Z.-X. / Shi, J.-J. / Ju, G.-X. et al. | 1997
- 273
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Impurity bound polaron in a magnetic field in quantum-well structures (sm960459)Liu, Zi-Xin et al. | 1997
- 285
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A systematic investigation of the effect of the material and the structural parameters on the hole states in strained p-Si-Si1-xGex-p-Si selectively doped double heterojunctions structures (sm960466)Hionis, Georgios et al. | 1997
- 285
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A systematic investigation of the effect of the material and the structural parameters on the hole states in strained p-Si/Si~1~-~xGe~x/p-Si selectively doped double heterojunctions structuresHionis, G. / Triberis, G. P. et al. | 1997
- 295
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A novel secular equation for the coupled-band envelope-function approximation for superlattices and application to InAs/In~xGa~1~-~xSb superlatticesSzmulowicz, F. et al. | 1997
- 295
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A novel secular equation for the coupled-band envelope-function approximation for superlattices and application to InAs-InxGa1-xSb superlattices (sm960217)Szmulowicz, Frank et al. | 1997
- 301
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Investigations on domain boundaries in ordered GaInP using stereo transmission electron microscopyHahn, G. / Geng, C. / Ernst, P. et al. | 1997
- 301
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Investigations on domain boundaries in ordered GaInP using stereo transmission electron microscopy (sm960456)Hahn, G. et al. | 1997
- 307
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Tuning the inter-subband tunnelling and universal conductance fluctuations with an in-plane magnetic field in the `quantum transport regime'Gompertz, M. J. / Ihn, T. / Nogaret, A. et al. | 1997
- 307
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Tuning the inter-subband tunnelling and universal conductance fluctuations with an inplane magnetic field in the'quantum transport regime' (sm960330)Gompertz, M.J. et al. | 1997
- 313
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Stark shifts and mean lifetimes for Al(x)Ga(1-x)As/GaAs single quantum wellsPanda, S. / Li, E.H. et al. | 1997
- 313
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Stark shifts and mean lifetimes for AI~xGa~1~-~xAs/GaAs single quantum wellsPanda, S. / Li, E. H. et al. | 1997
- 313
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Stark shifts and mean lifetimes for AIxGa1xAs-GaAs single quantum wells (sm960168)Panda, Sudhira et al. | 1997
- 325
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The behaviour of the propagating and evanescent modes of a 2D quantum wire in a perpendicular magnetic field (sm960462)Barbosa, J.C. et al. | 1997
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The behaviour of the propagating and evanescent modes of a 2D quantum wire in a perpendicular magnetic fieldBarbosa, J. C. / Butcher, P. N. et al. | 1997
- 341
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Determination of semiconductor quantum dot parameters by optical methodsKulish, N. R. / Kunets, V. P. / Lisitsa, M. P. et al. | 1997
- 341
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Determination of semiconductor quantum dot parameters by optical methods (sm960460)Kulish, N.R. et al. | 1997
- 353
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Optical properties of a lateral array of GaAs quantum wires grown by flow rate modulation epitaxyHamoudi, A. / Ogura, M. / Wang, X. L. et al. | 1997
- 359
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Large excitonic confinement in asymmetric quantum T wiresHasen, J. / Pfeiffer, L. N. / Pinczuk, A. et al. | 1997
- 365
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Functional properties of luminescent porous silicon as a component of optoelectronic integrationAraki, M. / Koyama, H. / Koshida, N. et al. | 1997
- 365
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Functional properties of luminescent porous silicon as a component of optoelectronic intergrationAraki, M. / Koyama, H. / Koshida, N. et al. | 1997
- 371
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Strong-coupling regime in pillar semiconductor microcavitiesBloch, J. / Planel, R. / Thierry-Mieg, V. et al. | 1997
- 375
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Exciton dynamics in quantum-well microcavitiesSermage, B. / Long, S. / Eskinazi, H. et al. | 1997
- 383
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Magnetic tuning of exciton-photon resonance in II-VI microcavitiesUlmer-Tuffigo, H. / Bleuse, J. / Kany, F. et al. | 1997
- 389
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Relaxation of microcavity polaritonWainstain, J. / Cassabois, G. / Roussignol, P. et al. | 1997
- 393
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Photonic band structure of 3D ordered silica matricesAstratov, V. N. / Vlasov, Y. A. / Karimov, O. Z. et al. | 1997
- 399
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Photonic crystal made by close packing SiO~2 submicron spheresLopez, C. / Vazquez, L. / Meseguer, F. et al. | 1997
- 405
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Energy band structure of quantum-size metal-oxide-semiconductor field effect transistorFu, Y. / Karlsteen, M. / Willander, M. et al. | 1997
- 411
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Switching in a reversible spin logic gateBandyopadhyay, S. / Roychowdhury, V. P. et al. | 1997
- 417
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The ultimate scaling limit of semiconductor-based transistorsZhang, W. E. / Wang, F.-C. / Yang, C. H. et al. | 1997
- 421
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The current-voltage characteristic in an ultrasmall junctionTakai, D. / Ohta, K. et al. | 1997
- 427
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Double-barrier coherent sound generator: a new deviceTuyarot, D. E. / Makler, S. S. / Anda, E. V. et al. | 1997
- 431
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Coupled quantum dots as quantum exclusive-OR gateBrum, J. A. / Hawrylak, P. et al. | 1997