Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1091
-
Review Article - Structure shape and stability of nanometric sized particlesYacamán, M.José et al. | 2001
- 1104
-
Regular Articles - Growth of germanium quantum dots on different dielectric substrates by chemical-vapor depositionKim, Dong-Won et al. | 2001
- 1109
-
Regular Articles - Preparation of highly ordered nanoporous Co membranes assembled by small quantum-sized Co particlesLei, Y. et al. | 2001
- 1115
-
Regular Articles - Synthesis and microstructure of gallium phosphide nanowiresShi, W.S. et al. | 2001
- 1119
-
Regular Articles - Fundamental connection between hydrogen-deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide-silicon interfaces in metal-oxide-semiconductor devicesCheng, Kangguo et al. | 2001
- 1124
-
Regular Articles - Low-energy carbon and nitrogen ion implantation in siliconBarbadillo, L. et al. | 2001
- 1133
-
Regular Articles - Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometryJiang, Z.X. et al. | 2001
- 1138
-
Regular Articles - Characterization of atomic-layer-deposited silicon nitride-SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistorsNakajima, And et al. | 2001
- 1144
-
Regular Articles - Comparison of the effective oxide thickness determined by ellipsometry with the result by medium energy ion scattering spectroscopy and high-resolution transmission electron microscopyCho, Hyun Mo et al. | 2001
- 1150
-
Regular Articles - Spatially resolved measurements of the capacitance by scanning tunneling microscope combined with a capacitance bridgeArakawa, Hitoshi et al. | 2001
- 1154
-
Regular Articles - Applications of atomic force microscopy-scanning capacitance microscopy in imaging implant structures of semiconductor devicesChao, Kuo-Jen et al. | 2001
- 1158
-
Regular Articles - Focusing of low energy electrons by submicrometer patterned structures in low energy electron microscopyKan, H.-C. et al. | 2001
- 1164
-
Regular Articles - AIN-based film bulk acoustic resonator devices with W-SiO2 multilayers reflector for rf bandpass filter applicationKim, Sang-Hee et al. | 2001
- 1169
-
Regular Articles - Silicon V grooves fabricated using Ta2O5 etch mask prepared by room-temperature magnetron sputteringChu, A.K. et al. | 2001
- 1173
-
Regular Articles - Chemical detection based on adsorption-induced and photoinduced stresses in microelectromechanical systems devicesDatskos, P.G. et al. | 2001
- 1180
-
Regular Articles - Structural and electronic properties of metal-silicide-silicon interfaces: A first-principles studyYu, Byung Deok et al. | 2001
- 1186
-
Regular Articles - Effect of annealing ambient on WSix(x=2.3) sidewall deformation and contact resistance in dichlorosilane-based W-polycide gatePark, Sang-Wook et al. | 2001
- 1195
-
Regular Articles - Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicideKim, Sam-Dong et al. | 2001
- 1201
-
Regular Articles - Characterization of Cu surface cleaning by hydrogen plasmaBaklanov, M.R. et al. | 2001
- 1212
-
Regular Articles - Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxaneLiu, Po-Tsun et al. | 2001
- 1219
-
Regular Articles - Multilayer coating and test of the optics for two new 10X Microstepper extreme-ultraviolet lithography camerasMontcalm, Claude et al. | 2001
- 1229
-
Regular Articles - Calculational study on membrane mask distortion and correctionMurooka, Ken-ichi et al. | 2001
- 1235
-
Regular Articles - Applications of micropinch x-ray sourceSemyonov, O.G. et al. | 2001
- 1241
-
Regular Articles - Plasma and X-UV source characteristics for Al targets heated by 40 ns Nd-laser pulsesWhitlock, Robert R. et al. | 2001
- 1253
-
Regular Articles - Characterization of thin photosensitive polyimide films for future metallization schemesAlford, T.L. et al. | 2001
- 1259
-
Regular Articles - Experimental study of microcylindrical lenses fabricated using focused-Ion-beam technologyFu, Yongqi et al. | 2001
- 1264
-
Regular Articles - Critical dimension guarantee for the next generation photomasks with critical dimension scanning electron microscopeIwamatsu, Takayuki et al. | 2001
- 1269
-
Regular Articles - Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluationKarecki, Simon et al. | 2001
- 1293
-
Regular Articles - Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysisKarecki, Simon et al. | 2001
- 1306
-
Regular Articles - Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysisKarecki, Simon et al. | 2001
- 1319
-
Regular Articles - Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorineChang, Jane P. et al. | 2001
- 1328
-
Regular Articles - Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabricationVisconti, P. et al. | 2001
- 1334
-
Regular Articles - Fabrication of photonic quantum ring laser using chemically assisted ion beam etchingKim, Jun-Youn et al. | 2001
- 1339
-
Regular Articles - Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanismsChabert, P. et al. | 2001
- 1346
-
Regular Articles - Ion energy distributions and optical emission spectra in NF3-based process chamber cleaning plasmasHsueh, Hsin-Pai et al. | 2001
- 1358
-
Regular Articles - Choice of boron-carbon-nitrogen coating material for electron emission based on photoelectric yield measurements during x-ray absorption studiesJiménez, I. et al. | 2001
- 1366
-
Regular Articles - Secondary electron emission of MgO thin layers prepared by the spin coating methodLee, Jeonghee et al. | 2001
- 1370
-
Regular Articles - High-voltage triode flat-panel display using field-emission nanotube-based thin filmsXu, N.S. et al. | 2001
- 1373
-
Regular Articles - Fabrication of gated niobium nitride field emitter arrayGotoh, Y. et al. | 2001
- 1377
-
Regular Articles - Application of dichroic mirror for improvement of luminance and luminous efficacy in an alternating current plasma display cellSong, Byung Moo et al. | 2001
- 1381
-
Regular Articles - New plasma display panel packaging technology using electrostatic bonding methodLee, Duck-Jung et al. | 2001
- 1385
-
Brief Reports and Comments - Conical etching and electrochemical metal replication of heavy-ion tracks in polymer foilsDobrev, D. et al. | 2001
- 1388
-
Rapid Communications - GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laserAkane, Toshimitsu et al. | 2001
- 1399
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Preface| 2001
- 1400
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nitrides - Molecular-beam epitaxy growth of Ga(In)NAs-GaAs heterostructures for photodiodesGotthold, David et al. | 2001
- 1404
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nitrides - Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applicationsStarikov, D. et al. | 2001
- 1409
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nitrides - Gas source molecular beam epitaxy of high quality AlxGa1-xN (0<=x<=1) on Si(111)Nikishin, S. et al. | 2001
- 1413
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nitrides - Gas-source molecular beam expitaxy of GaInNP-GaAs and a study of its band lineupHong, Y.G. et al. | 2001
- 1417
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nitrides - Faceting transition in epitaxial growth of dilute GaNAs films on GaAsAdamcyk, M. et al. | 2001
- 1422
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nitrides - Growth and characterization of GaInNAs-GaAs multiquantum wellsGilet, P. et al. | 2001
- 1426
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nitrides - GaN grown by molecular beam epitaxy with antimony as surfactantPei, C.W. et al. | 2001
- 1429
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Novel Materials - ZnO epilayers on GaN templates: Polarity control and valence-band offsetHong, Soon-Ku et al. | 2001
- 1434
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Novel Materials - New phase formation of Gd2O3 films on GaAs(100)Kortan, A.R. et al. | 2001
- 1439
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Novel Materials - Growth and characterization of MnAs-ZnSe ferromagnet-semiconductor hybrid heterostructuresChun, S.H. et al. | 2001
- 1443
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Novel Materials - Molecular-beam-epitaxy growth and luminescence properties of Nd3+-doped LaF3-CaF2 thin filmsZhang, X. et al. | 2001
- 1447
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Novel Materials - Molecular beam epitaxial growth of IV-VI multiple quantum well structures on Si(111) and BaF2(111) and optical studies of epilayer heatingWu, H.Z. et al. | 2001
- 1455
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nanostructures - Nonlinear optical and electro-optic properties of InAs-GaAs self-organized quantum dotsGhosh, S. et al. | 2001
- 1459
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nanostructures - Formation and photoluminescence of stacked CdSe quantum dots grown by molecular beam epitaxyMurase, Yasuhiro et al. | 2001
- 1463
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nanostructures - Self-assembled quantum dot transformations via anion exchangeShen, Jeng-Jung et al. | 2001
- 1467
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nanostructures - Chemical beam epitaxy growth of self-assembled InAs-InP quantum dotsPoole, P.J. et al. | 2001
- 1471
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nanostructures - Lateral correlation of InAs-AlInAs nanowire superlattices on InP(001)Li, Hanxuan et al. | 2001
- 1475
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Nanostructures - Photoluminescence properties of self-assembled InAs quantum dots grown on InP substrates by solid source molecular beam epitaxyZhuang, Q.D. et al. | 2001
- 1479
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - II-VI - High reflectivity symmetrically strained ZnxCdyMg1-x-ySe-based distributed Bragg reflectors for current injection devicesMaksimov, O. et al. | 2001
- 1483
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - II-VI - Molecular beam epitaxy growth and characterization of ZnTe:Cr2+ layers on GaAs(100)Sadofyev, Yu G. et al. | 2001
- 1488
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - II-VI - Electrical properties of in situ As doped Hg1-xCdxTe epilayers grown by molecular beam epitaxySelamet, Y. et al. | 2001
- 1492
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - II-VI - Photoluminescence from ZnTe:Yb films grown on (100) GaAs by molecular beam epitaxySadofyev, Yu G. et al. | 2001
- 1497
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - II-VI - Determination of the indices of refraction of molecular-beam-epitaxy-grown ZnSe-ZnCdSe multiple-quantum-well structuresPeiris, F.C. et al. | 2001
- 1501
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Antimonides - GaAs-substrate-based long-wave active materials with type-II band alignmentsJohnson, S.R. et al. | 2001
- 1505
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Devices - Metamorphic heterojunction bipolar transistors and P-I-N photodiodes; on GaAs substrates prepared by molecular beam epitaxyHoke, W.E. et al. | 2001
- 1510
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Devices - Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substratesLubyshev, D. et al. | 2001
- 1515
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Devices - Mobility enhancement by, reduced remote impurity scattering in a pseudomorphic In0.7Ga0.3As-In0.52Al0.48As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxyWatanabe, I. et al. | 2001
- 1524
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Devices - Molecular-beam epitaxy growth of InGaAs-InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potentialSkuras, E. et al. | 2001
- 1529
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Devices - Electrical properties of molecular beam epitaxially grown AlxGa1-xSbyAs1-y and its application in InP-based high electron mobility transistorsCai, W.Z. et al. | 2001
- 1536
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Devices - Very-low-temperature molecular beam epitaxial growth of GaP-AlAs heterostructures for distributed Bragg reflector applicationsPickrell, G.W. et al. | 2001
- 1541
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Growth Issues - Combined silicon, beryllium, and carbon tetrabromide single-port dopant source for molecular-beam epitaxyMoshegov, N.T. et al. | 2001
- 1546
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Growth Issues - Improved interface abruptness in pseudomorphic InGaAs-AlGaAs quantum wells with (411)A superflat interfaces grown by molecular beam epitaxyKitada, Takahiro et al. | 2001
- 1550
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Growth Issues - Effect of growth rate on surface morphology of heavily carbon-doped InGaAsKuhl, A.G. et al. | 2001
- 1554
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Growth Issues - Improvement of substrate temperature uniformity by using a dual-zone substrate heater in a commercial 4 in. GEN-III molecular beam epitaxy single-wafer reactorFang, X.M. et al. | 2001
- 1558
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Growth Issues - Role of molecular beam epitaxy parameters on InGaAs surface roughnessDeng, X. et al. | 2001
- 1562
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Growth Issues - Surfactant-mediated growth and characterization of Ge(211)-Si(211) heterostructures grown by molecular beam epitaxyTari, S. et al. | 2001
- 1567
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Growth Issues - Effects of the substrate tilting angle on the molecular beam epitaxial growth of GaAs on Si(110)Meléndez-Lira, M. et al. | 2001
- 1572
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - In situ Monitoring - Metastability of InGaAs-GaAs probed by in situ optical stress sensorBeresford, R. et al. | 2001
- 1576
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - In situ Monitoring - In situ monitoring of molecular-beam-epitaxy grown Hg1-xCdxTe by Fourier transform infrared spectroscopyBadano, G. et al. | 2001
- 1580
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - In situ Monitoring - Growth of HgCdTe for long-wavelength Infrared detectors using automated control from spectroscopic ellipsometry measurementsPhillips, Jamie et al. | 2001
- 1585
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - In situ Monitoring - Author Index| 2001
- 1588
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Preface| 2001
- 1589
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Defects and Oxide Films - Surface passivation of GaAs using an ultrathin cubic GaN interface control layerAnantathanasarn, Sanguan et al. | 2001
- 1597
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Defects and Oxide Films - GaAs(111)B(V19XV19)R23.4(degree) surface reconstructionFarrell, H.H. et al. | 2001
- 1606
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Defects and Oxide Films - Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)x(Al2O3)1-x alloysJohnson, R.S. et al. | 2001
- 1611
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Defects and Oxide Films - Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopyPreisler, E.J. et al. | 2001
- 1619
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Defects and Oxide Films - Silicon on GaN(0001) and (0001) surfacesLee, C.D. et al. | 2001
- 1619
-
Papers from the 19th North American Conference on Molecular Beam Epitaxy - Devices - Molecular beam epitaxial growth and characterization of Strain-compensated Al0.3In0.7P-InP-Al0.3In0.7P metamorphic-pseudomorphic high electron mobility transistors on GaAs substratesHoke, W.E. et al. | 2001
- 1626
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Compound Semiconductor Interfaces: Nitrides and Antimonides - Effects of As2 versus As4 on InAs-GaSb heterostructures: As-for-Sb exchange and film stabilityNosho, B.Z. et al. | 2001
- 1631
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Compound Semiconductor Interfaces: Nitrides and Antimonides - Transition to insulating behavior in the metal-semiconductor digital composite ErAs:InGaAsDriscoll, D.C. et al. | 2001
- 1635
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Compound Semiconductor Interfaces: Nitrides and Antimonides - Effects of Be on the II-VI-GaAs interface and on CdSe quantum dot formationGuo, S.P. et al. | 2001
- 1640
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Compound Semiconductor Interfaces: Nitrides and Antimonides - Microscopic structure of spontaneously formed islands on the GaAs(001)-(2X4) reconstructed surfaceLaBella, V.P. et al. | 2001
- 1644
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Compound Semiconductor Interfaces: Nitrides and Antimonides - Distribution of nitrogen atoms In dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopyMcKay, H.A. et al. | 2001
- 1650
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Novel Interface Characterization Techniques - Influence of anisotropic In-plane strain on critical point resonances in reflectance difference dataHingerl, K. et al. | 2001
- 1658
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Novel Interface Characterization Techniques - Optical anisotropy of organic layers on GaAs(001)Paraian, A.M. et al. | 2001
- 1662
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Novel Interface Characterization Techniques - Calibrated scanning spreading resistance microscopy profiling of carriers in III-V structuresLu, R.P. et al. | 2001
- 1671
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Novel Interface Characterization Techniques - Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN-GaN heterostructure field-effect transistor structureSchaadt, D.M. et al. | 2001
- 1675
-
Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces - Novel Interface Characterization Techniques - Chemistry and electrical properties of surfaces of GaN and GaN-AlGaN heterostructuresHashizume, Tamotsu et al. | 2001
- 1682
-
CUMULATIVE AUTHOR INDEX| 2001