Superlattices and microstructures : a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 369
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Analysis of faceting of grain boundaries in GaNChen, J. / Béré, A. / Nouet, G. et al. | 2004
- 377
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Epitaxial growth of ZnSiN2 single-crystalline films on sapphire substratesCloitre, T. / Sere, A. / Aulombard, R.L. et al. | 2004
- 385
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Microstructural analysis of GaN films grown by a two-step technique on patterned GaN and sapphireCho, Hyung Koun / Kim, Dong Chan / Lee, Hee Jun et al. | 2004
- 393
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Growth and characterisation of GaN with reduced dislocation densityDatta, R. / Kappers, M.J. / Vickers, M.E. et al. | 2004
- 403
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Room-temperature ferromagnetism in (Ga, Mn)N thin films grown by pulsed laser depositionO’Mahony, D. / McGee, F. / Venkatesan, M. et al. | 2004
- 409
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Mechanical and physicochemical properties of AlN thin films obtained by pulsed laser depositionCibert, C. / Tétard, F. / Djemia, P. et al. | 2004
- 417
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Characterization of thick HVPE GaN filmsNouet, Gérard / Ruterana, Pierre / Chen, Jun et al. | 2004
- 425
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DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructuresMosca, R. / Gombia, E. / Passaseo, A. et al. | 2004
- 435
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Electronic properties of deep defects in n-type GaNMuret, P. / Ulzhöfer, Ch. / Pernot, J. et al. | 2004
- 445
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On the determination of the statistical characteristics of the magnesium acceptor in GaNŠantić, B. et al. | 2004
- 455
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Energy and momentum relaxation of electrons in bulk and 2D GaNZanato, D. / Balkan, N. / Hill, G. et al. | 2004
- 465
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Theoretical assessment of electronic transport in InNBulutay, C. / Ridley, B.K. et al. | 2004
- 473
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In-plane photovoltage measurements on MBE grown InNTiras, E. / Zanato, D. / Mazzucato, S. et al. | 2004
- 487
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Cubic InN on -plane sapphireCimalla, V. / Kaiser, U. / Cimalla, I. et al. | 2004
- 487
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Cubic InN on -plane sapphireCimalla, V. et al. | 2004
- 487
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Cubic InN on Formula Not Shown -plane sapphireCimalla, V. / Kaiser, U. / Cimalla, I. et al. | 2004
- 497
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The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxyDimakis, E. / Konstantinidis, G. / Tsagaraki, K. et al. | 2004
- 509
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Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBEKomninou, Ph. / Kehagias, Th. / Delimitis, A. et al. | 2004
- 517
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Growth of InN layers by MOVPE using different substratesMaleyre, B. / Ruffenach, S. / Briot, O. et al. | 2004
- 527
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Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVDMaleyre, B. / Ruffenach, S. / Briot, O. et al. | 2004
- 537
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Structural and optical characterisation of InN layers grown by MOCVDSingh, P. / Ruterana, P. / Morales, M. et al. | 2004
- 547
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ECR-assisted MBE growth of In1−xGaxN heteroepitaxial films on SiYodo, Tokuo / Kitayama, Yasunari / Miyaki, Kazunari et al. | 2004
- 563
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Free-to-bound radiative recombination in highly conducting InN epitaxial layersArnaudov, B. / Paskova, T. / Paskov, P.P. et al. | 2004
- 573
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Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational propertiesDarakchieva, V. / Paskov, P.P. / Valcheva, E. et al. | 2004
- 581
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Raman scattering in InN films and nanostructuresPinquier, C. / Demangeot, F. / Frandon, J. et al. | 2004
- 591
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Anisotropy of the dielectric function for wurtzite InNGoldhahn, R. / Winzer, A.T. / Cimalla, V. et al. | 2004
- 599
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Potentialities of GaN-based microcavities in strong coupling regime at room temperatureAntoine-Vincent, N. / Natali, F. / Byrne, D. et al. | 2004
- 607
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Femtosecond time-resolved interferences of resonantly excited excitons in bulk GaNAoudé, O. / Disseix, P. / Leymarie, J. et al. | 2004
- 615
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Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wellsArmani, N. / Rossi, F. / Ferrari, C. et al. | 2004
- 625
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Optical studies on the red luminescence of InGaN epilayersCorreia, M.R. / Pereira, S. / Pereira, E. et al. | 2004
- 633
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Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gasKudrawiec, R. / Syperek, M. / Misiewicz, J. et al. | 2004
- 643
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Photoreflectance study of p-type GaN layersKudrawiec, R. / Syperek, M. / Misiewicz, J. et al. | 2004
- 651
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Three phonon processes in GaNKunert, H.W. et al. | 2004
- 659
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About some optical properties of AlxGa1−xN /GaN quantum wells grown by molecular beam epitaxyLeroux, M. / Semond, F. / Natali, F. et al. | 2004
- 675
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Spontaneous emission enhancement in micropatterned GaNNiehus, M. / Sanguino, P. / Monteiro, T. et al. | 2004
- 685
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Modelling of bandgap and band offset properties in III-N related heterostructuresAkıncı, Özden / Hakan Gürel, H. / Ünlü, Hilmi et al. | 2004
- 693
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Temperature dependence of the built-in electric field strength of AlGaN/GaN heterostructures on Si(111) substrateWinzer, A.T. / Goldhahn, R. / Gobsch, G. et al. | 2004
- 701
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Photoluminescence and excitation spectroscopy of the 1.5 (mu)m Er-related band in MBE-grown GaN layersIzeddin, I. et al. | 2004
- 701
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Photoluminescence and excitation spectroscopy of the 1.5 μm Er-related band in MBE-grown GaN layersIzeddin, I. / Gregorkiewicz, T. / Lee, D.S. et al. | 2004
- 707
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Optical and structural properties of rare earth doped GaN quantum dotsAndreev, T. / Hori, Y. / Biquard, X. et al. | 2004
- 713
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Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopyColder, A. / Marie, P. / Wojtowicz, T. et al. | 2004
- 721
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Growth and characterisation of Eu doped GaN thin filmsHalambalakis, G. / Rousseau, N. / Briot, O. et al. | 2004
- 729
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Extended X-ray absorption fine structure studies of thulium doped GaN epilayersKatchkanov, V. / Mosselmans, J.F.W. / Dalmasso, S. et al. | 2004
- 737
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Amorphisation of GaN during processing with rare earth ion beamsLorenz, K. / Wahl, U. / Alves, E. et al. | 2004
- 747
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PL studies on ZnO single crystals implanted with thulium ionsPeres, M. / Wang, J. / Soares, M.J. et al. | 2004
- 755
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Mutual quenching of Er3+ photoluminescence under two laser excitation in GaN:ErWojdak, M. / Braud, A. / Doualan, J.L. et al. | 2004
- 763
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Optical properties of InGaN quantum dotsDworzak, M. / Bartel, T. / Straßburg, M. et al. | 2004
- 773
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Excitonic Rabi oscillations in a quantum dot: local field impactSlepyan, G.Ya. / Maksimenko, S.A. / Magyarov, A.V. et al. | 2004
- 783
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Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillarsTaliercio, T. / Rousset, S. / Lefebvre, P. et al. | 2004
- 791
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Self-consistent calculations of exciton, biexciton and charged exciton energies in InGaN/GaN quantum dotsWilliams, D.P. / Andreev, A.D. / O’Reilly, E.P. et al. | 2004
- 799
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Band offset calculations applied to III–V nitride quantum well device engineeringBhouri, A. / Ben Fredj, A. / Lazzari, J.-L. et al. | 2004
- 807
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Nitride-based photodetectors: from visible to X-ray monitoringPau, J.L. / Rivera, C. / Pereiro, J. et al. | 2004
- 815
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Anisotropic propagation of surface acoustic waves on nitride layersPedrós, J. / Calle, F. / Grajal, J. et al. | 2004
- 825
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GaN-based surface acoustic wave filters for wireless communicationsPetroni, S. / Tripoli, G. / Combi, C. et al. | 2004
- 833
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Self-organized domain formation in low-dislocation-density GaNRiemann, T. / Christen, J. / Beaumont, B. et al. | 2004
- 849
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Properties of Schottky barrier photodiodes based on InGaN/GaN MQW structuresRivera, C. / Pau, J.L. / Pereiro, J. et al. | 2004
- 859
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The role of Mg complexes in the degradation of InGaN-based LEDsRossi, F. / Armani, N. / Salviati, G. et al. | 2004
- 869
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Optimization of two-dimensional electron gases and #x2013 characteristics for AlGaN-GaN HEMT devicesWang, Yan et al. | 2004
- 869
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Optimization of two-dimensional electron gases and – characteristics for AlGaN/GaN HEMT devicesWang, Yan / Ma, Long / Yu, Zhiping et al. | 2004
- 869
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Optimization of two-dimensional electron gases and Formula Not Shown – Formula Not Shown characteristics for AlGaN/GaN HEMT devicesWang, Y. / Ma, L. / Yu, Z. et al. | 2004
- 877
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Index to Volume 35/Index to Volume 36| 2004