IEEE transactions on electron devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 623
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EDITORIAL - Changes to the Editorial BoardVerret, D. et al. | 2007
- 623
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Changes to the Editorial BoardVerret, D. et al. | 2007
- 624
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INVITED - Research Progress on C-band Broadband Multibeam KlystronDing, Y. et al. | 2007
- 624
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Research Progress on C-band Broadband Multibeam KlystronYaogen Ding, / Yunshu Zhu, / Xiuling Yin, et al. | 2007
- 632
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Compound Semiconductor Devices - Base Charge Dynamics of Abrupt Base-Emitter Junction HBTs and Its Representation in Transistor ModelsSheinman, B. et al. | 2007
- 632
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Base Charge Dynamics of Abrupt Base–Emitter Junction HBTs and Its Representation in Transistor ModelsSheinman, B. / Ritter, C. et al. | 2007
- 637
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Performance Assessment of Subpercolating Nanobundle Network Thin-Film Transistors by an Analytical ModelPimparkar, N. / Jing Guo, / Alam, M.A. et al. | 2007
- 637
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Nanoelectronics - Performance Assessment of Subpercolating Nanobundle Network Thin-Film Transistors by an Analytical ModelPimparkar, N. et al. | 2007
- 645
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Nanoelectronics - Ballistic to Diffusive Crossover in III-V Nanowire TransistorsGilbert, M.J. et al. | 2007
- 645
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Ballistic to Diffusive Crossover in III–V Nanowire TransistorsGilbert, M.J. / Banerjee, S.K. et al. | 2007
- 654
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Asymmetric Electrical Properties of Corbino a-Si:H TFT and Concepts of Its Application to Flat Panel DisplaysHojin Lee, / Juhn-Suk Yoo, / Chang-Dong Kim, et al. | 2007
- 654
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Optoelectronics, Displays, and Imaging - Asymmetric Electrical Properties of Corbino a-Si:H TFT and Concepts of Its Application to Flat Panel DisplaysLee, H. et al. | 2007
- 663
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Gray Shades in RMS Responding Displays With Wavelets Based on the Slant TransformRuckmongathan, T.N. / Nadig, D.S. / Ranjitha, P.R. et al. | 2007
- 663
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Optoelectronics, Displays, and Imaging - Gray Shades in RMS Responding Displays With Wavelets Based on the Slant TransformRuckmongathan, T.N. et al. | 2007
- 671
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Optoelectronics, Displays, and Imaging - Characteristics of MBE-Grown GaN Detectors on Double Buffer Layers Under High-Power Ultraviolet Optical IrradiationLui, H.F. et al. | 2007
- 671
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Characteristics of MBE-Grown GaN Detectors on Double Buffer Layers Under High-Power Ultraviolet Optical IrradiationLui, H.F. / Wai-Keung Fong, / Surya, C. et al. | 2007
- 677
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Quantum Devices and Phenomena - Performance Projections for Ballistic Graphene Nanoribbon Field-Effect TransistorsLiang, G. et al. | 2007
- 677
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Performance Projections for Ballistic Graphene Nanoribbon Field-Effect TransistorsGengchiau Liang, / Neophytou, N. / Nikonov, D.E. et al. | 2007
- 683
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A New Technique for Measuring Gate-Oxide Leakage in Charging Protected MOSFETsLin, W. et al. | 2007
- 683
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Reliability - A New Technique for Measuring Gate-Oxide Leakage in Charging Protected MOSFETsLin, W. et al. | 2007
- 692
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Silicon Devices - Analysis of Geometry-Dependent Parasitics in Multifin Double-Gate FinFETsWu, W. et al. | 2007
- 692
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Analysis of Geometry-Dependent Parasitics in Multifin Double-Gate FinFETsWen Wu, / Mansun Chan, et al. | 2007
- 699
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Silicon Devices - Study of the Band-to-Band Tunneling Hot-Electron (BBHE) Programming Characteristics of p-Channel Bandgap-Engineered SONOS (BE-SONOS)Wu, M.-T. et al. | 2007
- 699
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Study of the Band-to-Band Tunneling Hot-Electron (BBHE) Programming Characteristics of p-Channel Bandgap-Engineered SONOS (BE-SONOS)Min-Ta Wu, / Hang-Ting Lue, / Kuang-Yeu Hsieh, et al. | 2007
- 707
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Low Thermal Budget Processing for Sequential 3-D IC FabricationRajendran, B. / Shenoy, R.S. / Witte, D.J. et al. | 2007
- 707
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Silicon Devices - Low Thermal Budget Processing for Sequential 3-D IC FabricationRajendran, B. et al. | 2007
- 715
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Power Optimization for SRAM and Its ScalingMorifuji, E. / Patil, D. / Horowitz, M. et al. | 2007
- 715
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Silicon Devices - Power Optimization for SRAM and Its ScalingMorifuji, E. et al. | 2007
- 723
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Modeling of Inversion Layer Centroid and Polysilicon Depletion Effects on Ultrathin-Gate-Oxide MOSFET Behavior: The Influence of Crystallographic OrientationRodriguez, N. / Gamiz, F. / Roldan, J.B. et al. | 2007
- 723
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Silicon Devices - Modeling of Inversion Layer Centroid and Polysilicon Depletion Effects on Ultrathin-Gate-Oxide MOSFET Behavior: The Influence of Crystallographic OrientationRodriguez, N. et al. | 2007
- 733
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Silicon Devices - Characteristics of Self-Aligned Gate-First Ge p- and n-Channel MOSFETs Using CVD HfO2 Gate Dielectric and Si Surface PassivationWu, N. et al. | 2007
- 733
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Characteristics of Self-Aligned Gate-First Ge p- and n-Channel MOSFETs Using CVD Formula Not Shown Gate Dielectric and Si Surface PassivationWu, N. / Zhang, Q. / Balasubramanian, N. et al. | 2007
- 733
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Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivationWu, Nan / Zhang, Qingchun / Balasubramanian, N. et al. | 2007
- 733
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Characteristics of Self-Aligned Gate-First Ge p- and n-Channel MOSFETs Using CVD $\hbox{HfO}_{2}$ Gate Dielectric and Si Surface PassivationNan Wu, / Qingchun Zhang, / Balasubramanian, N. et al. | 2007
- 742
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Low-Frequency Series-Resistance Analytical Modeling of Three-Dimensional Metal–Insulator–Metal CapacitorsBajolet, A. / Clerc, R. / Pananakakis, G. et al. | 2007
- 742
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Silicon Devices - Low-Frequency Series-Resistance Analytical Modeling of Three-Dimensional Metal-Insulator-Metal CapacitorsBajolet, A. et al. | 2007
- 752
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Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited Formula Not Shown LayersCho, M. / Degraeve, R. / Pourtois, G. et al. | 2007
- 752
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Silicon Devices - Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited HfO2 LayersCho, M. et al. | 2007
- 752
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Study of the reliability impact of chlorine precursor residues in thin atomic-layer-deposited HfO2 layersCho, Moonju / Degraeve, R. / Pourtois, G. et al. | 2007
- 752
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Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited $\hbox{HfO}_{2}$ LayersMoonju Cho, / Degraeve, R. / Pourtois, G. et al. | 2007
- 759
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Silicon Devices - Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer DepositionChen, T.C. et al. | 2007
- 759
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Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer depositionChen, Tze-Chiang / Peng, Cheng-Yi / Tseng, Chih-Hung et al. | 2007
- 759
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Characterization of the Ultrathin Formula Not Shown and Hf-Silicate Films Grown by Atomic Layer DepositionChen, T. C. / Peng, C.-Y. / Tseng, C.-H. et al. | 2007
- 759
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Characterization of the Ultrathin $\hbox{HfO}_{2}$ and Hf-Silicate Films Grown by Atomic Layer DepositionTze Chiang Chen, / Cheng-Yi Peng, / Chih-Hung Tseng, et al. | 2007
- 767
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A Two-Dimensional Model for Interface Coupling in Triple-Gate TransistorsAkarvardar, K. / Mercha, A. / Cristoloveanu, S. et al. | 2007
- 767
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Silicon Devices - A Two-Dimensional Model for Interface Coupling in Triple-Gate TransistorsAkarvardar, K. et al. | 2007
- 776
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A Composite Circuit Model for NDR Devices in Random Access Memory CellsAkinwande, D. / Wong, H.-S.P. et al. | 2007
- 776
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Silicon Devices - A Composite Circuit Model for NDR Devices in Random Access Memory CellsAkinwande, D. et al. | 2007
- 784
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Silicon Devices - Quantum Transport Simulation of Experimentally Fabricated Nano-FinFETKhan, H.R. et al. | 2007
- 784
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Quantum Transport Simulation of Experimentally Fabricated Nano-FinFETKhan, H.R. / Mamaluy, D. / Vasileska, D. et al. | 2007
- 797
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Feasibility Study of 45-nm-Node Scaled-Down Cu Interconnects With Molecular-Pore-Stacking (MPS) SiOCH FilmsTada, M. / Ohtake, H. / Ito, F. et al. | 2007
- 797
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Silicon Devices - Feasibility Study of 45-nm-Node Scaled-Down Cu Interconnects With Molecular-Pore-Stacking (MPS) SiOCH FilmsTada, M. et al. | 2007
- 807
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Comparison of the Work Function of Pt–Ru Binary Metal Alloys Extracted From MOS Capacitor and Schottky-Barrier-Diode MeasurementsTodi, R.M. / Erickson, M.S. / Sundaram, K.B. et al. | 2007
- 807
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Silicon Devices - Comparison of the Work Function of Pt-Ru Binary Metal Alloys Extracted from MOS Capacitor and Schottky-Barrier-Diode MeasurementsTodi, R.M. et al. | 2007
- 814
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Method for Managing the Stress Due to the Strained Nitride Capping Layer in MOS TransistorsOrain, S. / Fiori, V. / Villanueva, D. et al. | 2007
- 814
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Silicon Devices - Method for Managing the Stress Due to the Strained Nitride Capping Layer in MOS TransistorsOrain, S. et al. | 2007
- 822
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SS Device Phenomena - TCAD Methodology for Design of SCR Devices for Electrostatic Discharge (ESD) ApplicationsSalcedo, J.A. et al. | 2007
- 822
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TCAD Methodology for Design of SCR Devices for Electrostatic Discharge (ESD) ApplicationsSalcedo, J.A. / Liou, J.J. / Zhiwei Liu, et al. | 2007
- 833
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The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET DevicesQi Wang, / Minhua Li, / Sharp, J. et al. | 2007
- 833
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SS Power and High Voltage - The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET DevicesWang, Q. et al. | 2007
- 840
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SS Power and High Voltage - Dependence of Device Structures on Latchup Immunity in a High-Voltage 40-V CMOS Process With Drain-Extended MOSFETsHsu, S.-F. et al. | 2007
- 840
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Dependence of Device Structures on Latchup Immunity in a High-Voltage 40-V CMOS Process With Drain-Extended MOSFETsSheng-Fu Hsu, / Ming-Dou Ker, et al. | 2007
- 852
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SS Power and High Voltage - Integration of Melting Excimer Laser Annealing in Power MOS TechnologyPrivitera, V. et al. | 2007
- 852
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Integration of Melting Excimer Laser Annealing in Power MOS TechnologyPrivitera, V. / La Magna, A. / Spinella, C. et al. | 2007
- 861
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High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- Formula Not Shown BiCMOS Process for RF-Power ApplicationsMuller, D. / Giry, A. / Judong, F. et al. | 2007
- 861
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High-performance 15-V novel LDMOS transistor architecture in a 0.25-micrometer BiCMOS process for RF-power applicationsMuller, D. / Giry, A. / Judong, F. et al. | 2007
- 861
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High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- $\mu\hbox{m}$ BiCMOS Process for RF-Power ApplicationsMuller, D. / Giry, A. / Judong, F. et al. | 2007
- 861
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SS Power and High Voltage - High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25-mm BICMOS Process for RF-Power ApplicationsMuller, D. et al. | 2007
- 869
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An Effective Channel Mobility-Based Analytical On-Current Model for Polycrystalline Silicon Thin-Film TransistorsMingxiang Wang, / Man Wong, et al. | 2007
- 869
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BRIEFS - An Effective Channel Mobility-Based Analytical On-Current Model for Polycrystalline Silicon Thin-Film TransistorsWang, M. et al. | 2007
- 874
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Linear Cofactor Difference Extrema of MOSFET's Drain–Current and Application to Parameter ExtractionJin He, / Wei Bian, / Yadong Tao, et al. | 2007
- 874
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BRIEFS - Linear Cofactor Difference Extrema of MOSFET's Drain-Current and Application to Parameter ExtractionHe, J. et al. | 2007
- 879
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Thermal Maps of GaAs P-HEMT: A Novel System Based on the Photocurrent Spectral AnalysisReale, A. / Di Carlo, A. / Peroni, M. et al. | 2007
- 879
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BRIEFS - Thermal Maps of GaAs P-HEMT: A Novel System Based on the Photocurrent Spectral AnalysisReale, A. et al. | 2007
- 882
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Concave-Suspended High- Formula Not Shown Solenoid Inductors With an RFIC-Compatible Bulk-Micromachining TechnologyGu, L. / Li, X. et al. | 2007
- 882
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BRIEFS - Concave-Suspended High-Q Solenoid Inductors With an RFIC-Compatible Bulk-Micromachining TechnologyGu, L. et al. | 2007
- 882
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Concave-Suspended High-$Q$ Solenoid Inductors With an RFIC-Compatible Bulk-Micromachining TechnologyLei Gu, / Xinxin Li, et al. | 2007
- 885
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BRIEFS - Transversal Noise Current: An Excess Noise in CMOS Split-Drain TransistorsCastaldo, F.C. et al. | 2007
- 885
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Transversal Noise Current: An Excess Noise in CMOS Split-Drain TransistorsCastaldo, R.C. / dos Reis Filho, C.A. et al. | 2007
- 888
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BRIEFS - An Improved Representation of AC Space-Charge Fields in Steady-State Simulation Codes for Linear-Beam TubesDialetis, D. et al. | 2007
- 888
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An Improved Representation of AC Space-Charge Fields in Steady-State Simulation Codes for Linear-Beam TubesDialetis, D. / Chernin, D. / Antonsen, T.M. et al. | 2007
- 893
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Correction to “Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells”Bomsoo Kim, / Wook-Hyun Kwon, / Chang-Ki Baek, et al. | 2007
- 893
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COMMENTS AND CORRECTIONS - Correction to "Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells"Kim, B. et al. | 2007
- 894
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Special issue on device technologies and circuit techniques for power management| 2007
- 894
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ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Device Technologies and Circuit Techniques for Power Management| 2007
- 896
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Special issue on silicon carbide devices and technology| 2007
- 896
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ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Silicon Carbide Devices and Technology| 2007
- 898
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2007 eds education award call for nominations| 2007
- 898
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ANNOUNCEMENTS - Call for Nominations -- 2007 EDS Education Award| 2007
- 899
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ANNOUNCEMENTS - Call for Nominations -- 2007 EDS J. J. Ebers Award| 2007
- 899
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2007 EDS J.J. Ebers Award call for nominations| 2007
- 900
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ULSI process integration v| 2007
- 900
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ANNOUNCEMENTS - Call for Papers -- ULSI Process Integration V Meeting| 2007
- C1
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Table of contents| 2007
- C2
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IEEE Transactions on Electron Devices publication information| 2007
- C3
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IEEE Transactions on Electron Devices information for authors| 2007