Nuclear instruments & methods in physics research : a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics - Section B , Beam interactions with materials and atoms
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1
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Ion implantation in advanced planar and vertical devicesGossmann, Hans-Joachim L. et al. | 2005
- 6
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Alternative USJ formation and characterization methods for 45nm node technologyBorland, John O. et al. | 2005
- 12
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Electrical activation of ultra-shallow B and BF2 implanted silicon by flash annealYoo, Woo Sik / Kang, Kitaek et al. | 2005
- 18
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Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1μm CMOS devicesTorregrosa, Frank / Laviron, Cyrille / Milesi, Frédéric et al. | 2005
- 25
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Ultra-shallow junction formation by B18H22 ion implantationKawasaki, Y. / Kuroi, T. / Yamashita, T. et al. | 2005
- 30
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Nondestructive evaluation of as-implanted and annealed ultra shallow junctions by photothermal and photoluminescence heterodyne techniquesGeiler, H.D. / Karge, H. / Wagner, M. et al. | 2005
- 35
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Optimization of pre-amorphization and dopant implant conditions for advanced annealingFelch, S.B. / Graoui, H. / Tsai, G. et al. | 2005
- 41
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New method of Plasma doping with in-situ Helium pre-amorphizationSasaki, Y. / Jin, C.G. / Okashita, K. et al. | 2005
- 46
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Optimization of advanced PMOS junctions using Ge, B and F co-implantsGraoui, H. / Hilkene, M. / McComb, B. et al. | 2005
- 53
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90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implantsFelch, S.B. / Foad, M.A. / Olsen, C. et al. | 2005
- 58
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Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulationJin, C.G. / Sasaki, Y. / Okashita, K. et al. | 2005
- 62
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Application of ultra-high energy boron implantation for superjunction power (CoolMOS™) devicesBorany, J. von / Friedrich, M. / Rüb, M. et al. | 2005
- 68
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Implantation and annealing of aluminum in 4H silicon carbideRambach, M. / Schmid, F. / Krieger, M. et al. | 2005
- 72
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Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scatteringAbo, S. / Ichihara, S. / Lohner, T. et al. | 2005
- 77
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Electrical characteristics due to differences in crystal damage induced by various implant conditionsFuse, G. / Sano, M. / Murooka, H. et al. | 2005
- 83
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Formation of β-FeSi2 by implanting multicharged iron ions produced in an ECR ion sourceTomida, Masashi / Kato, Yushi / Asaji, Toyohisa et al. | 2005
- 88
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Diffusion of indium implanted in silicon: The effect of the pre-amorphisation treatment and of the presence of carbonGennaro, S. / Barozzi, M. / Bersani, M. et al. | 2005
- 93
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Comparison of elemental boron and boron halide implants into siliconSharp, J.A. / Gwilliam, R.M. / Sealy, B.J. et al. | 2005
- 98
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Angled implants for controlling gate–source/drain extension: A TCAD modeling studyThirupapuliyur, Sunderraj / Al-Bayati, Amir / Jain, Amitabh et al. | 2005
- 102
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Implantation induced electrical isolation of sulphur doped GaNxAs1−x layersAhmed, S. / Lin, J. / Haq, A. et al. | 2005
- 107
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Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOIHamilton, J.J. / Collart, E.J.H. / Colombeau, B. et al. | 2005
- 113
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Investigation on boron transient enhanced diffusion induced by the advanced P+/N ultra-shallow junction fabrication processesLallement, F. / Lenoble, D. et al. | 2005
- 121
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Ultra shallow junction formation and dopant activation study of Ga implanted SiGwilliam, R. / Gennaro, S. / Claudio, G. et al. | 2005
- 126
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Advanced 65nm CMOS devices fabricated using ultra-low energy plasma dopingWalther, S. / Lenoble, D. / Lallement, F. et al. | 2005
- 131
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Transient enhanced diffusion and deactivation of ion-implanted As in strained SiDilliway, G.D.M. / Smith, A.J. / Hamilton, J.J. et al. | 2005
- 136
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Merits and demerits of light absorbers for ultra-shallow junction formation by green laser annealingMatsuno, Akira / Takii, Eisuke / Eto, Takanori et al. | 2005
- 142
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Reducing ultra-shallow boron diffusion using carbon and fluorine co-implantationVanderpool, Aaron / Taylor, Mitch et al. | 2005
- 148
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Poly-Si gate engineering for advanced CMOS transistors by germanium implantationBourdon, H. / Juhel, M. / Oudet, B. et al. | 2005
- 155
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The effects of energy non-monochromaticity of 11B ion beams on 11B diffusionChen, John / Shao, Lin / Lin, Tony et al. | 2005
- 160
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Nickel silicide formation on shallow junctionsJiang, Yu-Long / Agarwal, Aditya / Ru, Guo-Ping et al. | 2005
- 167
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Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressingYu, C.H. / Yeh, P.H. / Chen, L.J. et al. | 2005
- 174
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Enhanced thermal and morphological stability of Ni(Si1−xGex) growth on -preamorphized Si0.8Ge0.2 substrateHe, J.H. / Wu, W.W. / Chen, L.J. et al. | 2005
- 174
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Enhanced thermal and morphological stability of Ni(Si1−xGex) growth on Formula Not Shown -preamorphized Si0.8Ge0.2 substrateHe, J. H. / Wu, W. W. / Chen, L. J. et al. | 2005
- 179
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High-dose V+ implantation in ZnO thin film structuresVyatkin, A.F. / Zinenko, V.I. / Agaphonov, Yu.A. et al. | 2005
- 183
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Dual gate oxide integrity improvement by implementing nitrogen implantation technologyLuoh, Tuung / Hsieh, Jung-Yu / Yang, Ling-Wuu et al. | 2005
- 188
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New developments in the applications of proton beam writingMistry, P. / Gomez-Morilla, I. / Grime, G.W. et al. | 2005
- 193
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The influence of the ion implantation temperature and the flux on smart-cut© in GaAsWebb, M. / Jeynes, C. / Gwilliam, R.M. et al. | 2005
- 197
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Investigation of silicon-on-insulator (SOI) substrate preparation using the smart-cutTM processChao, D.S. / Shu, D.Y. / Hung, S.B. et al. | 2005
- 203
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Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantationHerden, Marc / Gehre, Daniel / Feudel, Thomas et al. | 2005
- 208
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Manufacturability of fully ion implanted planer-doped-barrier diodes in GaAsGwilliam, R. / Wang, Y.Y. / Kelly, M.J. et al. | 2005
- 213
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Thermal stability enhancement of silicides by using N2 and Ar implantationLuoh, Tuung / Liou, Maggie / Liu, Hung-Wei et al. | 2005
- 217
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Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealingLiao, K.F. / Chen, P.S. / Lee, S.W. et al. | 2005
- 223
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Characterization of polysilicon thin-film transistors with asymmetric source/drain implantationShieh, M.S. / Lin, Y.J. / Yu, C.M. et al. | 2005
- 228
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Transistor challenges – A DRAM perspectiveFaul, Juergen W. / Henke, Dietmar et al. | 2005
- 235
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Gas cluster ion beams for wafer processingMack, M.E. et al. | 2005
- 240
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Development of polyatomic ion beam system using liquid organic materialsTakaoka, G.H. / Nishida, Y. / Yamamoto, T. et al. | 2005
- 245
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Langmuir probe analysis of a BF3 discharge in a high current ion sourceMefo, J. / Sealy, B.J. / Collart, E.J.H. et al. | 2005
- 250
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Very high uniformity mass analysed large area ion implantationAitken, Derek et al. | 2005
- 256
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ECR multi-charged ion source directly excited in a circular TE01 mode cavity resonatorKato, Yushi / Furuki, Hideyuki / Asaji, Toyohisa et al. | 2005
- 262
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An ECR ion source directly excited in a selected microwave mode cavity resonator for material processingAsaji, Toyohisa / Sasaki, Hiroshi / Furuki, Hideyuki et al. | 2005
- 267
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Production of multicharged iron and nitrogen ions and application to enhance photo-catalytic performance in visible light region on TiO2 thin filmsKato, Yushi / Yoshinaga, Takashi / Tomida, Masashi et al. | 2005
- 273
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Mass and energy analysis of the ions in a plasma flood systemWooding, A.C. / Armour, D.G. / van den Berg, J.A. et al. | 2005
- 278
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Ion implantation of boron into silicon by use of the boron cathodic-arc plasma generator: First resultsWilliams, J.M. / Klepper, C.C. / Hazelton, R.C. et al. | 2005
- 284
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Approaches to single wafer high current ion implantationRenau, A. et al. | 2005
- 290
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Enhancement of c-axis texture of AlN films by substrate implantationChen, C.H. / Yeh, J.M. / Hwang, J. et al. | 2005
- 296
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Characterization of Pt oxide thin film fabricated by plasma immersion ion implantationChen, Yi-Chan / Sun, Yu-Ming / Yu, Shih-Ying et al. | 2005
- 301
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Damage effect of fluorine implantation on PECVD α-SiOC barrier dielectricYang, F.M. / Chang, T.C. / Liu, P.T. et al. | 2005
- 307
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Determination of nitrogen-related defects in N-implanted ZnO films by dynamic cathodoluminescenceMei, Y.F. / Siu, G.G. / Fu, Ricky K.Y. et al. | 2005
- 312
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Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantationLiang, J.H. / Sang, Y.J. / Wang, C.-H. et al. | 2005
- 318
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Implant process control: Going beyond particles and RSSing, D.C. / Rendon, M.J. et al. | 2005
- 324
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Carrier illumination measurement of dopant lateral diffusionBudiarto, E. / Segovia, M. / Borden, P. et al. | 2005
- 330
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Characterization and reduction of a new particle defect mode in sub-0.25μm semiconductor process flowsPipes, Leonard / Taylor, Mitchell / Zietz, Gerard et al. | 2005
- 336
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Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implantsGraoui, H. / Conti, G. / Hilkene, M. et al. | 2005
- 341
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Investigations into the wear of a WL10 ion sourceHäublein, Volker / Sadrawetz, Simone / Frey, Lothar et al. | 2005
- 346
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Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extractionHäublein, Volker / Frey, Lothar / Ryssel, Heiner et al. | 2005
- 351
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Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probeBenjamin, M.C. / Hillard, R.J. / Borland, J.O. et al. | 2005
- 356
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Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxideLi, W.S. / Wu, Bill / Fan, Aki et al. | 2005
- 361
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In-line implant and RTP process monitoring using the carrier illumination techniqueLi, W.S. / Lim, H.K. / Fan, A. et al. | 2005
- 365
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Tuning for optimal performance in angle control, uniformity, and energy purityLiebert, Reuel B. / Olson, Joseph C. / Arevalo, Edwin A. et al. | 2005
- 372
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Mass resolution: The effects of resolving aperture and beam width on beam current and energetic contaminationFreer, B.S. / Graf, M.A. / Chow, J.L. et al. | 2005
- 378
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In situ beam angle measurement in a multi-wafer high current ion implanterFreer, B.S. / Reece, R.N. / Graf, M.A. et al. | 2005
- 384
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Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous SiHe, J.H. / Lin, H.H. / Wu, W.W. et al. | 2005
- 390
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Silicon field emission array as novel charge neutralization device for high current ion implanterIshikawa, J. / Gotoh, Y. / Nakamura, K. et al. | 2005
- 395
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Flat panel display – Impurity doping technology for flat panel displaysSuzuki, Toshiharu et al. | 2005
- 402
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Fundamental characteristics of liquid cluster ion source for surface modificationTakaoka, G.H. / Noguchi, H. / Nakayama, K. et al. | 2005
- 406
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Ultra-high resolution mass spectroscopy of boron cluster ionsJacobson, Dale / Horsky, Thomas / Krull, Wade et al. | 2005
- 411
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Improvements of anti-corrosion and mechanical properties of NiTi orthopedic materials by acetylene, nitrogen and oxygen plasma immersion ion implantationPoon, Ray W.Y. / Ho, Joan P.Y. / Liu, Xuanyong et al. | 2005
- 417
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Surface modification of polymeric materials by plasma immersion ion implantationFu, Ricky K.Y. / Cheung, I.T.L. / Mei, Y.F. et al. | 2005
- 422
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Formation of almost delta-layered nanoparticles in SiO2 thin film on Si substrate by metal negative-ion implantationIshikawa, Junzo / Tsuji, Hiroshi / Arai, Nobutoshi et al. | 2005
- 428
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Off-resonance microwave ion source for high-current molecular ion-beamsSakudo, N. / Ikenaga, N. / Nishimoto, R. et al. | 2005
- 433
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Silver negative-ion implantation to sol–gel TiO2 film for improving photocatalytic property under fluorescent lightTsuji, Hiroshi / Sakai, Noriaki / Sugahara, Hiromitsu et al. | 2005
- 438
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Characterization of Formula Not Shown implanted monitor for rapid thermal processor temperature calibrationDrobny, V. F. / Robinson, D. et al. | 2005
- 438
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Characterization of implanted monitor for rapid thermal processor temperature calibrationDrobny, Vladimir F. / Robinson, Derek et al. | 2005
- 443
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Decaborane implantation with the medium current implanterHamamoto, Nariaki / Umisedo, Sei / Nagayama, Tsutomu et al. | 2005
- 449
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Morphological evolution of surfaces irradiated by gas cluster ion beams during thin film depositionInoue, S. / Toyoda, N. / Tsubakino, H. et al. | 2005
- 455
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Development of 1mA cluster ion beam sourceSeki, T. / Matsuo, J. et al. | 2005
- 459
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Immobilization of extracellular matrix on polymeric materials by carbon-negative-ion implantationTsuji, Hiroshi / Sommani, Piyanuch / Muto, Takashi et al. | 2005
- 465
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Morphology modifications of quantum dots on Si(001) surface by ion sputteringChen, H.C. / Huang, C.M. / Liao, K.F. et al. | 2005
- 470
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Nanostructure and adhesion of electroless-plated Cu film on the self-catalyzed Cu using metal-plasma ion implanterChen, Uei-Shin / Hsieh, Wei-Jen / Shih, Han C. et al. | 2005
- 477
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Characterization of copper metallization for interconnect by 90°-bend electromagnetic filtered vacuum arcChen, Uei-Shin / Shih, Han C. et al. | 2005
- CO2
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Editorial board| 2005
- ix
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Committees and Sponsors| 2005
- vii
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EditorialChen, Lih J. / Poate, John / Lei, Tan-Fu et al. | 2005
- xi
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Contents| 2005