Superlattices and Microstructures
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 269
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A general derivation of the density of states function for quantum wells and superlatticesPrairie, M.W. / Kolbas, R.M. et al. | 1990
- 279
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MBE growth of AlGaAs/GaAs superlattices on GaAs (110) substratesSato, Masamichi / Maehashi, Kenzo / Asahi, Hajime et al. | 1990
- 283
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DX centers in selectively Si-doped GaAsAlAs superlatticesAbabou, S. / Marchand, J.J. / Mayet, L. et al. | 1990
- 287
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Photoinduced intersubband absorption in barrier doped multi-quantum-wellsGarini, Y. / Olszakier, M. / Cohen, E. et al. | 1990
- 291
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Intervalence-band photoinduced absorption in undoped GaAs/AlxGa1−xAs multiple-quantum-wellsOlszakier, M. / Brener, I. / Ehrenfreund, E. et al. | 1990
- 295
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Electron beam induced selective etching and deposition technologyMatsui, Shinji / Ichihashi, Toshinori / Baba, Masakazu et al. | 1990
- 303
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Excitons associated with miniband dispersion in (InGa)AsGaAs strained layer superlatticesMoore, Karen J. / Duggan, Geoffrey / Raukema, Age et al. | 1990
- 309
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Quantum confined Stark effect in InGaAs/InP and InGaAs/InGaAsPTütken, T. / Frankowsky, G. / Hangleiter, A. et al. | 1990
- 309
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Quantum confined Stark effect in InGaAs/InP and InGaAs/InGaAsP multi quantum well structuresTütken, T. / Frankowsky, G. / Hangleiter, A. et al. | 1990
- 315
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Optically induced gate voltage spectroscopy in a GaAs/AlGaAs heterostructureWeegels, L.M. / Haverkort, J.E.M. / Leys, M.R. et al. | 1990
- 319
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Measurement of the ambipolar carrier capture time in a GaAs/AlxGa1−xAs separate confinement heterostructure quantum wellBlom, P.W.M. / Mols, R.F. / Haverkort, J.E.M. et al. | 1990
- 323
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A new analytical charge model for the dual-gate controlled thin-film SOI MOSFETSchubert, M. / Höfflinger, B. / Zingg, R.P. et al. | 1990
- 327
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Intrinsic bistability in an optically pumped asymmetric quantum well structureZrenner, A. / Worlock, J.M. / Florez, L.T. et al. | 1990
- 331
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Two-step decoupling of excitonic states in a biperiodic GaAs/AlAs short period superlattice under electric fieldsKawashima, K. / Fujiwara, K. / Katahama, K. et al. | 1990
- 335
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Electronic structure and band lineups at the diamond/boron nitride and diamond/nickel interfacesPickett, Warren E. / Erwin, Steven C. et al. | 1990
- 341
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Infrared properties of the Double Barrier StructureSheng, H.Y. / Sinkkonen, J. et al. | 1990
- 345
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Subpicosecond luminescence study of carrier transfer in InGaAs/InP multiple quantum wellsKersting, R. / Zhou, X.Q. / Wolter, K. et al. | 1990
- 349
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Observation of impurity effects on conductance quantizationFaist, J. / Guéret, P. / Rothuizen, H. et al. | 1990
- 353
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Theory of reduced threshold current density in GaAs/AlGaAs quantum well lasersGhiti, A. / Batty, W. / O'Reilly, E.P. et al. | 1990
- 359
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Thermal processing of GaAsSb/GaAs low-dimensional strained-layer structuresHomewood, K.P. / Gillin, W.P. / Pritchard, R.E. et al. | 1990
- 363
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Optically induced variability of the strain-induced electric fields in (111) GaSb/AlSb quantum wellsShanabrook, B.V. / Gammon, D. / Beresford, R. et al. | 1990
- 369
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The bound-state resonant tunneling transistor (BSRTT): Fabrication, D.C. I–V characteristics and high-frequency propertiesHaddad, G.I. / Reddy, U.K. / Sun, J.P. et al. | 1990
- 375
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Excitonic theory of Stark ladders in superlatticesWhittaker, D.M. et al. | 1990
- 381
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Dry etch damage and its effect on electronic and optical nanostructuresWilkinson, C.D.W. et al. | 1990
- 387
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Laterally-confined HgTeCdTe quantum wells and superlatticesMeyer, J.R. / Bartoli, F.J. / Hoffman, C.A. et al. | 1990
- 393
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Periodic magnetic modulation of a two-dimensional electron gas: Transport propertiesVasilopoulos, P. / Peeters, F.M. et al. | 1990
- 397
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Modulated reflectance lineshapes for quantum well systemsShields, A.J. / Klipstein, P.C. et al. | 1990
- 403
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Carrier transport effects on the photocurrent spectra of an intrinsic GaAs/AlGaAs multiple quantum well with highly doped AlGaAs contact layersShields, A.J. / Klipstein, P.C. / Smith, G.W. et al. | 1990
- 409
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Using modulation spectroscopy measurements of the Stark effect in MOVPE grown GaAs/(AlGa)As multiple quantum wells to observe monolayer thickness changes in wells of up to 158 A.U. in widthShields, A.J. / Klipstein, P.C. / Roberts, J.S. et al. | 1990
- 409
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Using modulation spectroscopy measurements of the stark effect in MOVPE grown GaAs/(AlGa)As multiple quantum wells to observe monolayer thickness changes in wells of up to 158Å in widthShields, A.J. / Klipstein, P.C. / Roberts, J.S. et al. | 1990
- 415
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The (InGa)As-(InAl)As resonant tunnelling double barrier structure subjected to a transverse magnetic fieldCury, L.A. / Celeste, A. / Goutiers, B. et al. | 1990
- 419
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Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxySobiesierski, Z. / Woolf, D.A. / Westwood, D.I. et al. | 1990
- 423
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Wavelength selective detection using excitonic resonances in GaAs/AlGaAs P-I-(MQW)-N structuresGoswami, Subrata / Bhattacharya, Pallab / Singh, Jasprit et al. | 1990
- 423
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Wavelengths selective detection using excitonic resonances in GaAs/AlGaAs P-I-(MQW)-N structuresSubrata Goswami / Pallab Bhattacharya / Jasprit Singh et al. | 1990
- 427
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Subpicosecond transient four-wave-mixing experiments: A novel method to study resonant tunnelingLeo, Karl / Shah, Jagdeep / Göbel, Ernst O. et al. | 1990
- 433
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A survey of band-gap renormalization in quantum well structuresZimmermann, R. / Böttcher, E.H. / Kirstaedter, N. et al. | 1990
- 437
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Bandgap renormalization at finite carrier densities in semiconductor quantum wells and mesa structuresReinecke, T.L. / Broido, D.A. / Lach, E. et al. | 1990
- 441
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Plasmons localized at impurities in semiconductor quantum wellsRudin, S. / Reinecke, T.L. et al. | 1990