Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1
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Electrical and optical properties of GaCrN films grown by molecular beam epitaxyPolyakov, A.Y. et al. | 2005
- 5
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Thermal oxidation of Si1-x-yGexCy epitaxial layers characterized by Raman and Infrared spectroscopiesCuadras, A. et al. | 2005
- 11
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Deposition of silica-silver nanocomposites by magnetron cosputteringBoscarino, Diego et al. | 2005
- 20
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Local pressure in the proximity of a field emitterZumer, Marko et al. | 2005
- 24
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Deposition of diamond-like carbon film on phase-change optical disk by PECVDUeng, H.Y. et al. | 2005
- 32
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Fabrication technique for microelectromechanical systems vertical comb-drive actuators on a monolithic silicon substrateZhang, Q.X. et al. | 2005
- 42
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Improved C-V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor depositionKadoshima, Masaru et al. | 2005
- 48
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Electrical properties of Ni-Au and Au contacts on p-type GaNLin, Yow-Jon et al. | 2005
- 51
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Sidewall profile control of thick benzocyclobutene reactively ion etched in CF4-O2 plasmasBuchwald, Walter R. et al. | 2005
- 57
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Use of 370 nm UV light for selective-area fibroblast cell growthKang, B.S. et al. | 2005
- 61
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Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structuresDouhéret, O. et al. | 2005
- 66
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Characterization of prototype silicon pitch artifacts fabricated by scanning probe lithography and anisotropic wet etchingChien, F.S.-S. et al. | 2005
- 72
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Nanoimprint process using epoxy-siloxane low-viscosity prepolymerViallet, Benoît et al. | 2005
- 76
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Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructuresKluth, S.M. et al. | 2005
- 80
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Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal-insulator-metal capacitors in dynamic random access memory applicationsMa, Dongjoon et al. | 2005
- 84
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Predicting surface figure in diamond turned calcium fluoride using in-process force measurementMarsh, Eric R. et al. | 2005
- 90
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High-temperature self-grown ZrO2 layer against Cu diffusion at Cu(2.5 at. % Zr)-SiO2 interfaceLiu, C.J. et al. | 2005
- 96
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Anodic bonding using the low expansion glass ceramic Zerodur(R)Elp, J.van et al. | 2005
- 99
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Tapered sidewall dry etching process for GaN and its applications in device fabricationChoi, H.W. et al. | 2005
- 103
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Mass spectrometry studies of resist trimming processes in HBr-O2 and Cl2-O2 chemistriesPargon, E. et al. | 2005
- 113
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High-temperature electrostatic chuck for nonvolatile materials dry etchKanno, S. et al. | 2005
- 119
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Use of lateral film structure for ultrathin diffusion barrier thermal stability studyLim, Boon Kiat et al. | 2005
- 125
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Chamber maintenance and fault detection technique for a gate etch process via self-excited electron resonance spectroscopyBaek, Kye Hyun et al. | 2005
- 130
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Fabrication of natural diamond microlenses by plasma etchingChoi, H.W. et al. | 2005
- 133
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Partial blanking of an electron beam using a quadrupole lensZhang, Feng et al. | 2005
- 138
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Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithographyJunarsa, Ivan et al. | 2005
- 144
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Studies on the interfacial and crystallographic characteristics of Al2O3-SiO2-Si and ZrO2-SiO2-Si stacksKim, Joong-Jung et al. | 2005
- 149
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Photoluminescence properties of p-type InGaAsN grown by rf plasma-assisted molecular beam epitaxyXie, S.Y. et al. | 2005
- 153
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Formation of GdSi2 film on Si(111) via phase transformation assisted by interfacial SiO2 layerChung, K.B. et al. | 2005
- 157
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High-current-density field emitters based on arrays of carbon nanotube bundlesManohara, Harish M. et al. | 2005
- 162
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LiNbO3 thin film growth on (0001)-GaNHansen, Peter J. et al. | 2005
- 168
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Analysis of stress and composition of silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition for microfabrication processesCianci, E. et al. | 2005
- 173
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On-wafer monitoring of plasma-induced electrical current in silicon dioxide to predict plasma radiation damageOkigawa, Mitsuru et al. | 2005
- 178
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Schottky barrier height of TIN-p-type Si(100) evaluated by forward current-voltage and capacitancePelleg, Joshua et al. | 2005
- 186
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Rigorous coupled wave analysis of front-end-of-line wafer allgnment marksYeo, Swee Hock et al. | 2005
- 196
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Subpicosecond jitter in picosecond electron bunchesIoakeimidi, K. et al. | 2005
- 201
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Temperature dependent defect formation and charging in hafnium oxides and silicatesLim, D. et al. | 2005
- 206
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Electron-beam-assisted etching of CrOx films by Cl2Wang, S. et al. | 2005
- 210
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Highly selective low-damage processes using advanced neutral beams for porous low-k filmsOhtake, Hiroto et al. | 2005
- 217
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Deposition control for reduction of 193 nm photoresist degradation In dielectric etchingNegishi, N. et al. | 2005
- 224
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Quantifying acid generation efficiency for photoresist applicationsTsiartas, Pavlos C. et al. | 2005
- 229
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Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous TI as a barrier film for Cu interconnectOu, Keng-Liang et al. | 2005
- 236
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Solvent-assisted polymer-bonding lithographyLuan, Shifang et al. | 2005
- 242
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Effect of self-patterned Si1-xGex template layer on the structural and optical properties of Ge dotsIsmail, B. et al. | 2005
- 247
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Cleaning of extreme ultraviolet lithography optics and masks using 13.5 nm and 172 nm radiationHamamoto, K. et al. | 2005
- 252
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Lithographic tuning of photonic-crystal unit-cell resonators with InGaAs-GaAs quantum dots emitting at 1.2 mmChoi, Y.-S. et al. | 2005
- 257
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Characteristics of heavily doped p+-n ultrashallow junction prepared by plasma doping and laser annealingBaek, Sungkweon et al. | 2005
- 262
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Selective growth of InAs quantum dots on patterned GaAsHsieh, Tung-Po et al. | 2005
- 267
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Ideal delta doping of carbon in GaAsWinking, L. et al. | 2005
- 271
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Electron-beam patterning with sub-2 nm line edge roughnessMalac, Marek et al. | 2005
- 274
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Properties of Mn- and Co-doped bulk ZnO crystalsPolyakov, A.Y. et al. | 2005
- 280
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Diffusion-barrier properties of Ta1-xWx alloy films and silicidation-induced Cu penetration in Cu-Si contactsNoya, Atsushi et al. | 2005
- 288
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Evaluation of lanthanum based gate dielectrics deposited by atomic layer depositionTriyoso, D.H. et al. | 2005
- 298
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Performance of nanomanipulator fabricated on glass capillary by focused-ion-beam chemical vapor depositionKometani, Reo et al. | 2005
- 302
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Monitoring polarization and high-numerical aperture with phase shifting masks: Radial phase gratingMcIntyre, Gregory et al. | 2005
- 307
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Verification studies of thermophoretic protection for extreme ultraviolet masksDedrick, Daniel E. et al. | 2005
- 318
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Pulsed laser deposition of lanthanum monosulfide thin films on silicon substratesFairchild, S. et al. | 2005
- 322
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Investigation of Ta-Ti-Al-Ni-Au ohmic contact to AlGaN-GaN heterostructure field-effect transistorKim, Ki Hong et al. | 2005
- 327
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Effects of amine- and pyridine-terminated molecular nanolayers on adhesion at Cu-SiO2 interfacesGanesan, P.G. et al. | 2005
- 332
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Brief Reports and Comments - Process integration compatibility of low-k and ultra-low-k dielectricsMoore, Darren et al. | 2005
- 336
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CUMULATIVE AUTHOR INDEX| 2005
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Information for Contributors| 2005