Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.

Inhaltsverzeichnis

2079
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN-GaN metal insulator semiconductor field effect transistor structures
Cho, E. et al. | 2009
2084
Analysis of thermally activated kinetics and uniformity of photoresist ashing process on 300 mm wafers
Mézerette, D.L. et al. | 2009
2091
Effects of exposure time on defects and demolding force in soft ultraviolet nanoimprint lithography
Ye, Xiangdong et al. | 2009
2097
Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films
Mehta, M. et al. | 2009
2102
Enhancement of operation temperature of InAs-GaAs quantum-dot infrared photodetectors with hydrogen-plasma treatment
Lin, Wei-Hsun et al. | 2009
2106
Growth scaling of metal oxide columnar thin films deposited by glancing angle depositions
Taschuk, M.T. et al. | 2009
2112
Effect of Ta buffer layer and thickness on the structural and magnetic properties of Co thin films
Vahaplar, K. et al. | 2009
2117
Mechanism of reducing line edge roughness in ArF photoresist by using CF3I plasma
Soda, Eiichi et al. | 2009
2124
Structural and electrical properties of metal contacts on n-type ZnO thin film deposited by vacuum coating technique
Periasamy, C. et al. | 2009
2128
Transparent dual-gate InGaZnO thin film transistors: OR gate operation
Lim, Wantae et al. | 2009
2132
Plasma treatment methods to improve indium bump bonding via indium oxide removal
Greer, Frank et al. | 2009
2138
Highly sensitive positive-working molecular resist based on new molecule
Hattori, Shigeki et al. | 2009
2145
Pd-Ru-Au Ohmic contacts to InAlSb-InAs heterostructures for high electron mobility transistors
Dormaier, R. et al. | 2009
2153
Controlled etching and regrowth of tunnel oxide for antenna-coupled metal-oxide-metal diodes
Tiwari, Badri et al. | 2009
2161
Nonlinear large deflection of nanopillars fabricated by focused ion-beam induced chemical vapor deposition using double-cantilever testing
Tanaka, Hiro et al. | 2009
2166
Cu-plated through-wafer vias for AlGaN-GaN high electron mobility transistors on Si
Chen, K.-H. et al. | 2009
2170
Fabrication and optical properties of Ti-doped W18O49 nanorods using a modified plasma-arc gas-condensation technique
Su, Cherng-Yuh et al. | 2009
2175
Effects of Si interlayer on resistance switching of Pt-Si-TiO2-Pt structures
Go, Seunghee et al. | 2009
2182
Novel heterostructure of CdS nanoparticle-WO3 nanowhisker: Synthesis and photocatalytic properties
Kim, Hyeyoung et al. | 2009
2187
Evolution of surface morphology of dry-etched ZnO with Cl2-Ar plasma
Hsueh, Kuang-Po et al. | 2009
2192
Effect of liquid dispensing on flow field for immersion lithography
Chen, Wenyu et al. | 2009
2200
The effect of acid on superconformal filling in 100 nm trenches
Gallaway, Joshua W. et al. | 2009
2206
Organopalladium catalyst on S-terminated GaAs(001)-(2X6) surface
Konishi, Tomoya et al. | 2009
2209
Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules
O'Donnell, Sarah E. et al. | 2009
2217
Calculation of electron emission from a gated single nanowire
Lei, Da et al. | 2009
2222
Electrical characterization of thin InAs films grown on patterned W-GaAs substrates
Astromskas, Gvidas et al. | 2009
2227
Comparison of conjugated polymer deposition techniques by photoluminescence spectroscopy
Lantz, K.R. et al. | 2009
2232
Oxygen effects on radiation hardness of ZnO thin films
Gür, Emre et al. | 2009
2238
Luminescence mechanisms in Si quantum dots-SiNx nanocomposite structures
Rezgui, Béchir et al. | 2009
2242
Surface plasmon resonance of gold nanoparticles formed by cathodic arc plasma ion implantation into polymer
Teixeira, F.S. et al. | 2009
2248
Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition
Terai, Yoshikazu et al. | 2009
2252
Etch stop in via-hole etching on aluminum interconnection using inductively coupled C2F6 plasma with O2 additive gas
Imai, Shin-ichi et al. | 2009
2259
Nanoimprint mold fabrication and duplication for embedded servo and discrete track recording media
Tan, E.L. et al. | 2009
2264
Uniformity conditioning of diamond field emitter arrays
Jarvis, J.D. et al. | 2009
2270
Time-multiplexed, inductively coupled plasma process with separate SiCl4 and O2 steps for etching of GaAs with high selectivity
Golka, S. et al. | 2009
2280
Numerical approach for the theory of harmonic self-heating technique to measure thermophysical properties of suspended thin samples
Feng, Bo et al. | 2009
2286
Film-thickness dependence of 10 GHz Nb coplanar-waveguide resonators
Inomata, Kunihiro et al. | 2009
2292
Self-assembled monolayers of poly(ethylene glycol) siloxane as a resist for ultrahigh-resolution electron beam lithography on silicon oxide
Gao, Bo et al. | 2009
2301
Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications
Vos, Ingrid et al. | 2009
2309
Diagnostics and modeling of CH4-CO2 plasmas for nanosmooth diamond deposition: Comparison to experimental data
Gries, T. et al. | 2009
2321
Brief Reports and Comments - Influence of room temperature control on atomic force microscope imaging
Fu, Joseph et al. | 2009
2324
CUMULATIVE AUTHOR INDEX
| 2009
Analysis of dielectric constant of a self-forming barrier layer with Cu-Mn alloy on TEOS-SiO2
Chung, S.-M. et al. | 2009
Letters - Effect of sidewall passivation in BCl3-N2 inductively coupled plasma etching of two-dimensional GaAs photonic crystals
Atlasov, Kirill A. et al. | 2009
Effects of Ga+ milling on InGaAsP quantum well laser with mirrors milled by focused ion beam
Vallini, F. et al. | 2009
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