Microelectronic engineering : an international journal of semiconductor manufacturing technology
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 137
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PrefaceThomas, Olivier / Dallaporta, Herve / Gas, Patrick et al. | 2003
- 139
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Francois d’Heurle – scientist, teacher and mentorHarper, James M.E et al. | 2003
- 141
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François d'Heurle; a personal reflection on his work combined with his heavy engagement in the world situationPeterson, Sture et al. | 2003
- 141
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Francois d'Heurle; a personal reflection on his work combined with his heavy engagement in the world situationPeterson, S. et al. | 2003
- 142
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François d’Heurle: Microelectronics and basic research in materials scienceGas, Patrick et al. | 2003
- 142
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Francois d'Heurle: Microelectronics and basic research in materials scienceGas, P. et al. | 2003
- 144
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Towards implementation of a nickel silicide process for CMOS technologiesLavoie, C. / d’Heurle, F.M. / Detavernier, C. et al. | 2003
- 158
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Ni- and Co-based silicides for advanced CMOS applicationsKittl, J.A. / Lauwers, A. / Chamirian, O. et al. | 2003
- 166
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First stages of silicidation in Ti/Si thin filmsChenevier, B / Chaix-Pluchery, O / Gergaud, P et al. | 2003
- 174
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Nickel-based contact metallization for SiGe MOSFETs: progress and challengesZhang, S.-L. et al. | 2003
- 186
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Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologiesZhao, Q.T. / Kluth, P. / Bay, H. et al. | 2003
- 191
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Time resolved study on Co/Ni/a-Si phase transition during isothermal annealing at 400 degreeCAlberti, A. / Bongiorno, C. / La Via, F. et al. | 2003
- 191
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Time resolved study on Co/Ni/a-Si phase transition during isothermal annealing at 400 °CAlberti, A. / Bongiorno, C. / La Via, F. et al. | 2003
- 196
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Application of atomic force microscopy to detect edge of mask contaminations that may hinder titanium silicide formationBresolin, C. / Pesaturo, M. / Paruzzi, P. et al. | 2003
- 201
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Thickness scaling issues of Ni silicideChamirian, O / Kittl, J.A / Lauwers, A et al. | 2003
- 209
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Transport properties of Mn-doped Ru2Si3Ivanenko, L / Filonov, A / Shaposhnikov, V et al. | 2003
- 215
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C49 defect influence on the C49–C54 transitionLa Via, F. / Mammoliti, F. / Grimaldi, M.G. et al. | 2003
- 220
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Formation of C49-TiSi2 in flash memories: a nucleation controlled phenomenon?Mangelinck, D. / Gas, P. / Badéche, T. et al. | 2003
- 226
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In situ high temperature synchrotron-radiation diffraction studies of silicidation processes in nanoscale Ni layersRinderknecht, J / Prinz, H / Kammler, T et al. | 2003
- 233
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Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnectsWiemer, C / Tallarida, G / Bonera, E et al. | 2003
- 240
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Electrical properties of W/Si interfaces with embedded Ge/Si islandsHattab, A. / Meyer, F. / Yam, Vy et al. | 2003
- 246
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Pt-based metallization of PMOS devices for a compatible monolithic integration of semiconducting/Yba2Cu3O7-d superconducting devices on siliconHuot, G. / Mechin, L. / Bloyet, D. et al. | 2003
- 246
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Pt-based metallization of PMOS devices for a compatible monolithic integration of semiconducting/Yba2Cu3O7−δ superconducting devices on siliconHuot, G. / Méchin, L. / Bloyet, D. et al. | 2003
- 251
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From diffusion processes to adherence properties in NiTi microactuatorsJarrige, I. / Holliger, P. / Nguyen, T.P. et al. | 2003
- 255
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Challenges of back end of the line for sub 65 nm generationFayolle, M. / Passemard, G. / Louveau, O. et al. | 2003
- 267
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Material modification of the patterned wafer during dry etching and strip determined by XPSFurukawa, Y. / Patz, M. / Kokubo, T. et al. | 2003
- 274
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Integration of SiOC air gaps in copper interconnectsGosset, L.G / Arnal, V / Brun, Ph et al. | 2003
- 280
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Thermal conductivity of ultra low-k dielectricsDelan, A / Rennau, M / Schulz, S.E et al. | 2003
- 285
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Influence of low-k dry etch chemistries on the properties of copper and a Ta-based diffusion barrierErnur, D. / Iacopi, F. / Carbonell, L. et al. | 2003
- 293
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Impact of LKD5109™ low-k to cap/liner interfaces in single damascene process and performanceIacopi, F. / Patz, M. / Vos, I. et al. | 2003
- 302
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Single damascene integration of porous Zirkon™ version 1 low-k dielectric filmsMalhouitre, S. / Jehoul, C. / Van Aelst, J. et al. | 2003
- 308
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Characterisation of JSR’s spin-on hardmask FF-02Das, A. / Le, Q.T. / Furukawa, Y. et al. | 2003
- 314
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Experimental results on the integration of copper and CVD ultra low k materialUhlig, Matthias / Bertz, A. / Erben, J.-W. et al. | 2003
- 320
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Low-k dielectrics: a non-destructive characterization by infrared spectroscopic ellipsometryBoher, P. / Defranoux, C. / Bucchia, M. et al. | 2003
- 330
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CVD TiN layers as diffusion barrier films on porous SiO2 aerogelBonitz, J / Schulz, S.E / Gessner, T et al. | 2003
- 337
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Potential of amorphous Mo–Si–N films for nanoelectronic applicationsYlönen, M. / Kattelus, H. / Savin, A. et al. | 2003
- 341
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Pinhole density measurements of barriers deposited on low-k filmsShamiryan, D / Abell, T / Le, Q.T et al. | 2003
- 346
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Influence of SiH4 on the WNx-PECVD processEcke, R / Schulz, S.E / Hecker, M et al. | 2003
- 352
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Barrier studies on porous silk semiconductor dielectricTőkei, Zs. / Iacopi, F. / Richard, O. et al. | 2003
- 358
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Reliability studies of MOCVD TiSiN and EnCoRe Ta(N)/TaTőkei, Zs. / Kelleher, D. / Mebarki, B. et al. | 2003
- 363
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Simulations of diffusion barrier deposition on porous low-k filmsYanovitskaya, Z.S. / Zverev, A.V. / Shamiryan, D. et al. | 2003
- 368
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A new damascene architecture for high-performance metal–insulator–metal capacitors integrationFarcy, A. / Torres, J. / Arnal, V. et al. | 2003
- 373
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Investigation of iridium as a gate electrode for deep sub-micron CMOS technologyPawlak, M.A / Schram, T / Maex, K et al. | 2003
- 377
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Developing a conductive oxygen barrier for ferroelectric integrationJohnson, J.A. / Lisoni, J.G. / Wouters, D.J. et al. | 2003
- 384
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Investigations of the interface stability in HfO2–metal electrodesFillot, F. / Chenevier, B. / Maı̂trejean, S. et al. | 2003
- 392
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Reactively sputtered tantalum pentoxide thin films for integrated capacitorsRiekkinen, T / Molarius, J et al. | 2003
- 398
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Correlation of electromigration lifetime distribution to failure mode in dual Damascene Cu/SiLK interconnectsGignac, L.M. / Hu, C.-K. / Liniger, E.G. et al. | 2003
- 406
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Reduced Cu interface diffusion by CoWP surface coatingHu, C.-K. / Gignac, L. / Rosenberg, R. et al. | 2003
- 412
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Small-scale plasticity in thin Cu and Al filmsDehm, Gerhard / Balk, T.John / Edongué, Hervais et al. | 2003
- 425
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Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray micro-diffraction and modelingDe Wolf, I / Senez, V / Balboni, R et al. | 2003
- 436
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In-situ study of stress evolution during solid state reaction of Pd with Si(001) using synchrotron radiationMegdiche, M. / Gergaud, P. / Curtil, C. et al. | 2003
- 442
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Stress development during evaporation of Cu and Ag on siliconPienkos, T / Proszynski, A / Chocyk, D et al. | 2003
- 447
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Impact of thermal cycling on the evolution of grain, precipitate and dislocation structure in Al, 0.5% Cu, 1% Si thin filmsKaouache, B. / Gergaud, P. / Thomas, O. et al. | 2003
- 455
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Simulation of local mechanical stresses in lines on substrateLoubens, Audrey / Fortunier, Roland / Fillit, René et al. | 2003
- 461
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Electrochemical aspects of new materials and technologies in microelectronicsDubin, Valery M. et al. | 2003
- 470
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Copper post-electroplating anneal: evaluation of in-line vs. furnace anneal on layer propertiesHaumesser, P.H / Mourier, T / Maı̂trejean, S et al. | 2003
- 478
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Inverse analysis of material removal data using a multiscale CMP modelSeok, Jongwon / Kim, Andrew T. / Sukam, Cyriaque P. et al. | 2003
- 489
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Electroless deposition of novel Ag–W thin filmsBogush, V. / Inberg, A. / Croitoru, N. et al. | 2003
- 495
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Electrical resistivity of thin electroless Ag–W films for metallizationGlickman, E.E. / Bogush, V. / Inberg, A. et al. | 2003
- 501
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Characteristics of W and Cu/W gate MOS diodes fabricated by a process utilizing LPCVD of W and Cu lift-offKouvatsos, D.N. / Ioannou-Sougleridis, V. / Tsevas, S. et al. | 2003
- 506
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Microstructural investigation of electrodeposited CuAg-thin filmsStrehle, S. / Menzel, S. / Wendrock, H. et al. | 2003
- 512
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Electroless deposition of Co(W) thin filmsSverdlov, Y / Shacham-Diamand, Y et al. | 2003
- 519
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Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?La Via, F. / Roccaforte, F. / Raineri, V. et al. | 2003
- 524
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Dual metal SiC Schottky rectifiers with low power dissipationRoccaforte, Fabrizio / La Via, Francesco / Di Franco, Salvatore et al. | 2003
- 529
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A model of the growth of intermediate phase islands in multilayersLucenko, G. / Gusak, A. et al. | 2003
- 533
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Three-dimensional atom probe investigation of Co/Al thin film reactionVovk, V. / Schmitz, G. / Kirchheim, R. et al. | 2003
- 539
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The metal/organic monolayer interface in molecular electronic devicesVuillaume, Dominique / Lenfant, Stéphane et al. | 2003
- 551
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Corrosion inhibition by self-assembled monolayers for enhanced wire bonding on Cu surfacesWhelan, Caroline M. / Kinsella, Michael / Carbonell, Laureen et al. | 2003
- 558
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Surface treatment of wire bonding metal padsAlberici, S. / Coulon, D. / Joubin, P. et al. | 2003
- 566
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Integrated approach to electrode and AlN depositions for bulk acoustic wave (BAW) devicesJakkaraju, R. / Henn, G. / Shearer, C. et al. | 2003
- 571
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Author Index| 2003
- CO2
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Editorial Board| 2003
- v
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Table of Contents| 2003