Barrier Thickness Dependence of Waveguide Loss for Compressively Strained MQW-BH Lasers Operating at 1.48 m (Englisch)
- Neue Suche nach: Tsuji, S.
- Neue Suche nach: Suzuki, R.
- Neue Suche nach: Tsuchiya, Y.
- Neue Suche nach: Taniwatari, T.
- Neue Suche nach: IEEE
- Neue Suche nach: Tsuji, S.
- Neue Suche nach: Suzuki, R.
- Neue Suche nach: Tsuchiya, Y.
- Neue Suche nach: Taniwatari, T.
- Neue Suche nach: IEEE
In:
International semiconductor laser conference
;
52-53
;
1992
-
ISBN:
- Aufsatz (Konferenz) / Print
-
Titel:Barrier Thickness Dependence of Waveguide Loss for Compressively Strained MQW-BH Lasers Operating at 1.48 m
-
Beteiligte:Tsuji, S. ( Autor:in ) / Suzuki, R. ( Autor:in ) / Tsuchiya, Y. ( Autor:in ) / Taniwatari, T. ( Autor:in ) / IEEE
-
Kongress:13th, International semiconductor laser conference ; 1992 ; Takamatsu; Japan
-
Erschienen in:
-
Verlag:
- Neue Suche nach: [np]
-
Erscheinungsdatum:01.01.1992
-
Format / Umfang:2 pages
-
Anmerkungen:Described as the conference digest
-
ISBN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2
-
Progress in quantum well lasers: application of strainThijs, P.J.A. et al. | 1992
- 6
-
Vertical cavity surface emitting lasers for integrated optoelectronicsColdren, L.A. et al. | 1992
- 8
-
Visible lasers from red to blueKukimoto, H. et al. | 1992
- 12
-
Gain-coupled long wavelength InGaAsP/InP distributed feedback lasers with quantum well gratings grown by chemical beam epitaxyTsang, W.T. / Choa, F.S. / Wu, M.C. / Chen, Y.K. / Logan, R.A. / Tanbun-Ek, T. / Chu, S.N.G. / Sergent, A.M. / Reichmann, K. / Burrus, C.A. et al. | 1992
- 14
-
Gain-coupled DFB laser diode using novel absorptive conduction-type-inverted gratingLuo, Y. / Cao, H.-L. / Dobashi, M. / Hosomatsu, H. / Nakano, Y. / Tada, K. et al. | 1992
- 16
-
New Method to Reduce Effective Linewidth Enhancement Factor ~e~f~f of DSM Lasers Using Optical Complex CouplingKudo, K. / Arai, S. / Komori, K. / IEEE et al. | 1992
- 16
-
New method to reduce effective linewidth enhancement factor /spl alpha//sub eff/ of DSM lasers using optical complex couplingKudo, K. / Arai, S. / Komori, K. et al. | 1992
- 18
-
Dynamic characteristics of 1.55/spl mu/m gain-coupled distributed feedback laserNakajima, S. / Inoue, T. / Luo, Y. / Oki, T. / Nakano, Y. / Tada, K. / Takahashi, R. / Karniya, T. et al. | 1992
- 18
-
Dynamic Characteristics of 1.55 m Gain-Coupled Distributed Feedback LaserNakajima, S. / Inoue, T. / Luo, Y. / Oki, T. / IEEE et al. | 1992
- 22
-
The effect of strain on auger recomhination and temperature sensitivity in 1.5/spl mu/m quantum well lasersZou, Y. / Osinski, J.S. / Grodzinski, P. / Dapkus, P.D. / Rideout, W. / Sharfin, W.F. / Crawford, F.D. et al. | 1992
- 22
-
The Effect of Strain on Auger Recombination and Temperature Sensitivity in 1.5 m Quantum Well LasersZou, Y. / Osinski, J. S. / Grodzinski, P. / Dapkus, P. D. / IEEE et al. | 1992
- 24
-
Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasersFuchs, G. / Schiedel, C. / Hangleiter, A. / Scholz, F. et al. | 1992
- 26
-
An experimental and theoretical analysis of the influence of compressive strain on 1.5 /spl mu/m quantum well lasersAdams, A.R. / Wilkinson, V.A. / Braithwaite, J. / Silver, M. / O'Reilly, E.P. et al. | 1992
- 26
-
An Experimental and Theoretical Analysis of the Influence of Compressive Strain on 1.5 am Quantum Well LasersAdams, A. R. / Wilkinson, V. A. / Braithwaite, J. / Silver, M. / IEEE et al. | 1992
- 28
-
Comparative study of extremely low threshold 1.3/spl mu/m strained and lattice matched quantum well lasersMathur, A. / Osinski, J.S. / Grodzinski, P. / Dapkus, P.D. et al. | 1992
- 28
-
Comparative Study of Extremely Low Threshold 1.3 m Strained and Lattice Matched Quantum Well LasersMathur, A. / Osinski, J. S. / Grodzinski, P. / Dapkus, P. D. / IEEE et al. | 1992
- 30
-
Improved performance in tensile-strained long wavelength lasersJones, G. / Silver, M. / Hawley, M. / O'Reilly, E.P. / Adams, A.R. / Thijs, P.J.A. et al. | 1992
- 32
-
Reduction of linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasersKano, F. / Yamanaka, T. / Yamamoto, N. / Yoshikuni, Y. / Mawatari, H. / Tohmori, Y. / Yamamoto, M. / Yokoyama, K. et al. | 1992
- 36
-
Quantum mechanical modelling of realistic FP laser diodesMarcenac, D.D. / Carroll, J.E. et al. | 1992
- 38
-
Calculation of combined lateral and longitudinal spatial hole burning in /spl lambda//4 sbifted DFB lasersBandelow, U. / Wenzel, H. / Wunsche, H.-J. et al. | 1992
- 38
-
Calculation of Combined Lateral and Longitudinal Spatial Hole Burning in lambda/4 Shifted DFB LasersBandelow, U. / Wenzel, H. / Wuensche, H.-J. / IEEE et al. | 1992
- 40
-
Dynamic response of the gain coupled DFB laserZhang, L.M. / Carroll, J.E. / Tsang, C. et al. | 1992
- 42
-
Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)Seki, S. / Sotirelis, P. / Hess, K. et al. | 1992
- 44
-
Transient carrier responses in multiple quantum well lasersTessler, N. / Eisenstein, G. et al. | 1992
- 46
-
Optimum asymmetric mirror facets structure for high efficiency semiconductor lasersHigashi, T. / Ogita, S. / Soda, H. / Kobayashi, H. / Kurakake, H. / Aoki, O. / Okazaki, J. et al. | 1992
- 48
-
Improvement of high power/high temperature operation of long wavelength laser diodes by band discontinuity reduction layerTakemoto, A. / Nishiguchi, H. / Takiguchi, T. / Nakajima, Y. / Omura, E. / Aiga, M. et al. | 1992
- 50
-
Channel guide InGaAs-GaAs-InGaP strained quantum well lasers on P-type GaAs substrate for high power operationSin, Y.K. / Horikawa, H. / Kamijoh, T. et al. | 1992
- 52
-
Barrier thickness dependence of waveguide loss for compressively strained MQW-BH lasers operating at 1.48/spl mu/mTsuji, S. / Suzuki, R. / Tsuchiya, Y. / Taniwatari, T. / Ono, Y. et al. | 1992
- 52
-
Barrier Thickness Dependence of Waveguide Loss for Compressively Strained MQW-BH Lasers Operating at 1.48 mTsuji, S. / Suzuki, R. / Tsuchiya, Y. / Taniwatari, T. / IEEE et al. | 1992
- 54
-
Low stress and low dislocation density AlGaAs/GaAs laser diodes fabricated on Si substratesWada, N. / Sakai, S. / Fukui, M. et al. | 1992
- 56
-
Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxyZhang, G. / Nappi, J. / Asonen, H. / Pessa, M. et al. | 1992
- 58
-
Application of reactive ion etching using C/sub 2/H/sub 6//H/sub 2/O/sub 2/ to fabricate a 1.48 /spl mu/m lnGaAsP/InP p-substrate buried-heterostructure laser diodeSugimoto, H. / Isu, T. / Tada, H. / Miura, T. / Shiba, T. / Kimura, T. / Takemoto, A. et al. | 1992
- 58
-
Application of Reactive Ion Etching Using C~2H~6/H~2/O~2 to Fabricate a 1.48 m InGaAsP/InP P-Substrate Buried-Heterostructure Laser DiodeSugimoto, H. / Isu, T. / Tada, H. / Miura, T. / IEEE et al. | 1992
- 60
-
Development of 2.2 m Emission Ridge Waveguide Lasers with Low Threshold GaInAsSb/GaAlAsSb DH WafersMorosini, M. B. Z. / Herrera-Perez, J. L. / Da Silveira, A. C. F. / Von Zuben, A. A. G. / IEEE et al. | 1992
- 60
-
Development of 2.2 /spl mu/m emission ridge waveguide lasers with low threshold GaInAsSb/GaAlAsSb DH wafersMorosini, M.B.Z. / Herrera-Perez, J.L. / da Silveira, A.C.F. / Von Zuben, A.A.G. / Loural, M.S.S. / Patel, N.B. et al. | 1992
- 62
-
Polarization Dependent -Factor in InGaAs/InGaAsP MQW MaterialSoerensen, M. / Storkfelt, N. / Jepsen, K. S. / Mikkelsen, B. / IEEE et al. | 1992
- 62
-
Polarization dependent a-factor in InGaAs/InGaAsP MQW materialSoerensen, M. / Storkfelt, N. / Jepsen, K.S. / Mikkelsen, B. / Stubkjaer, K.E. et al. | 1992
- 64
-
Optimization of InGaAs/InGaAsP MQW mqw semiconductor amplifiersJepsen, K.S. / Mikkelsen, B. / Stubkjaer, K.E. et al. | 1992
- 64
-
Optimization of InGaAs/InGaAsP MQW Semiconductor AmplifiersJepsen, K. S. / Mikkelsen, B. / Yamaguchi, M. / Stubkjaer, K. E. / IEEE et al. | 1992
- 66
-
Very low threshold current operation of semiconductor ring lasersKrauss, T. / Layboum, P.J.R. et al. | 1992
- 68
-
Effect of sidewall reflector on current versus light-output in a pnpn vertical to surface transmission electro-photonic device with a vertical cavityNumai, T. / Kurihara, K. / Ogura, I. / Kosaka, H. / Sugimoto, M. / Kasahara, K. et al. | 1992
- 70
-
Coupling mechanism of two dimensional reflectivity modulated vertical cavity semiconductor laser arraysOrenstein, M. / Fishman, T. et al. | 1992
- 72
-
Thermal crosstalk in two-dimensional arrays of vertical-cavity surface-emitting diode lasersOsinski, M. / Nakwaski, W. et al. | 1992
- 74
-
Control of spontaneous emission in hemispherical microcavity lasersMatinaga, F. / Karlsson, A. / Suzuki, T. / Kadota, Y. / Ikeda, M. / Yamamoto, Y. et al. | 1992
- 76
-
Coherence and spectral linewidth properties of active grating-coupled, surface-emitting amplified lasersCarlson, N.W. / Liew, S.K. / Amantea, R. / Gardner, P. / Menna, R. / Vangieson, E. / Abeles, J.H. / Evans, G.A. et al. | 1992
- 78
-
High-power CW distributed out-coupled grating surface emitting laser-amplifiers with narrow spectra and high-quality beamsAbeles, J.H. / York, P.K. / Carlson, N.W. / Andrews, J.T. / Reichert, W.F. / Kirk, J.B. / Hughes, N.A. / Liew, S.K. / Connolly, J.C. / Evans, G.A. et al. | 1992
- 80
-
Room temperature operation of circular grating surface-emitting laserChunmeng Wu, / Svilans, M. / Makino, T. / Glinski, J. / Blaauw, C. / Maritan, C. / Knight, G. / Fallahi, M. / Templeton, I. / Maciejko, R. et al. | 1992
- 82
-
Linewidth, tunability and FM response of strongly-coupled strained-MW three-electrode DFB lasersCorrec, P. / Charil, J. / Ougazzaden, A. / de Faria, I.F. / Bouley, J.C. et al. | 1992
- 82
-
Linewidth, Tunability and FM Response of Strongly-Coupled Strained-MQW Three-Electrode DFB LasersCorrec, P. / Charil, J. / Ougazzaden, A. / De Faria, I. F. / IEEE et al. | 1992
- 84
-
4 section DBR laser for low chirp IM or FSK modulationProvost, J.-G. / Jacquet, J. / Pagnod-Rossiaux, P. / Gaborit, F. / Gaumont-Goarin, E. / Labourie, C. / Leblond, F. / Sigogne, D. / Lesterlin, D. / Leclerc, D. et al. | 1992
- 86
-
Wavelength Tunable InGaAsP/InP Multiple-lambda/4-Shifted Distributed Feedback LaserUtaka, K. / Tsurusawa, M. / Horita, M. / Matsushima, Y. / IEEE et al. | 1992
- 86
-
Wavelength tunable InGaAsP/InP multiple-/spl lambda//4-shifted distributed feedback laserUtaka, K. / Tsurusawa, M. / Horita, M. / Matsushima, Y. et al. | 1992
- 88
-
High-power multiple-quantum-well distributed feedback laser arrays and Fabry-Perot laser arrays at 1.5/spl mu/m wavelengthLiou, K.-Y. / Dentai, A.C. / Burrows, E.C. / Gnall, R.P. / Joyner, C.H. / Burrus, C.A. et al. | 1992
- 88
-
High-Power Multiple-Quantum-Well Distributed Feedback Laser Arrays and Fabry-Perot Laser Arrays at 1.5 m WavelengthLiou, K.-Y. / Dentai, A. G. / Burrows, E. C. / Gnall, R. P. / IEEE et al. | 1992
- 90
-
30 mw 690 nm high-power strained-quantum-well AlGaInP laser with Al/sub 2/O/sub 3/-coated mirror facetsUeno, Y. / Fujii, H. / Sawano, H. / Endo, K. / Kobayashi, K. / Hara, K. et al. | 1992
- 90
-
30 mW 690 nm High-Power Strained-Quantum-Well AlGaInP Laser with Al~2O~3-Coated Mirror FacetsUeno, Y. / Fujii, H. / Sawano, H. / Endo, K. / IEEE et al. | 1992
- 92
-
High power operation of small beam astigmatism AlGaInP self-aligned bend waveguide laser diodeFuruya, A. / Kito, Y. / Fukushima, T. / Sugano, M. / Sudo, H. / Anayama, C. / Kondo, M. / Tanahashi, T. et al. | 1992
- 94
-
High-power AlGaInP visible laser diodes with a non-absorbing window-structureKamizato, T. / Arimoto, S. / Watanabe, H. / Kadoiwa, K. / Omura, E. / Kakimoto, S. / Ikeda, K. et al. | 1992
- 96
-
Highly uniform 10 element laser array on the P-type substrate for the optical parallel data transmission systemNishiguchi, H. / Nishimura, T. / Ishimura, E. / Nakajima, Y. / Kokubo, Y. / Hirano, R. / Aiga, M. et al. | 1992
- 98
-
High-power multi-beam AlGaAs TQW lasers with buried-ridge, stripe structure fabricated by using novel etching stop techniqueShima, A. / Kadowaki, T. / Tada, H. / Miura, T. / Shiba, T. / Miyashita, M. / Omura, E. / Aiga, M. / Ikeda, K. et al. | 1992
- 100
-
Soliton compression (/spl tilde/ 1.2 ps) of gain-switched DFB laser using an erbium-doped fiber amplifierOng, J.T. / Tsuchiya, M. / Ogawa, Y. / Kamiya, T. et al. | 1992
- 100
-
Soliton Compression (asymptotically equal to 1.2 ps) of Gain-Switched DFB Laser Using an Erbium-Doped Fiber AmplifierOng, J. T. / Takahashi, R. / Tsuchiya, M. / Ogawa, Y. / IEEE et al. | 1992
- 102
-
37 ps transform-limited optical pulse at 5 GHz repetition rate generated by DFB LD/EA modulator integrated light sourceTanaka, H. / Suzuki, M. / Matsushima, Y. et al. | 1992
- 104
-
Self-pulsation at more than 20 GHz in InGaAsP/InP DFB lasersSartorius, B. / Feiste, U. / Horer, J. / Mohrle, M. / Molt, R. / Rosenzweig, M. et al. | 1992
- 106
-
High frequency modulation and short optical pulse generation from a laser diode with the gain governed by free carrier heatingGurevich, S.A. / Gorfinkel, V.B. / Shtengel, G.E. / Chebunina, I.E. et al. | 1992
- 108
-
Observation of frequency doubling in monolithic mode-locked lasersMiyazawa, T. / Wakatsuki, A. / lwamura, H. et al. | 1992
- 110
-
Phase modulation mode locking of semiconductor lasers in linear and coupled ring/linear extended cavitiesNagar, R. / Abraham, D. / Eisenstein, G. et al. | 1992
- 112
-
Four-wave mixing and bistability in a semiconductor laser under intermodal injectionSchanne, P. / Heinrich, H.-J. / Elsasser, W.E. / Gobel, E.O. et al. | 1992
- 114
-
Nearly degenerate four wave mixing in DFB lasersMecozzi, A. / Spano, P. / Hui, R. et al. | 1992
- 116
-
All-optical modulation of semiconductor laser by using three energy levels in n-doped quantum wellNoda, S. / Yamashita, T. / Ohya, M. / Muromoto, Y. / Sasaki, A. et al. | 1992
- 118
-
Theoretical and experimental optimisation of the high speed dynamic performance of 2 x /spl lambda//8 (InGa)(AsP) MQW DFB laser structuresWhiteaway, J.E.A. / Thompson, G.H.B. / Garrettl, B. / Wright, A.P. / Glew, R.W. / Cureton, C.G. / Moule, D.J. et al. | 1992
- 118
-
Theoretical and Experimental Optimisation of the High Speed Dynamic Performance of 2xlambda/8 (InGa) (AsP) MQW DFB Laser StructuresWhiteaway, J. E. A. / Thompson, G. H. B. / Garrett, B. / Wright, A. P. / IEEE et al. | 1992
- 122
-
3.3 watt CW diffraction-limited broad area semiconductor amplifierMehuys, D. / Goldberg, L. / Hall, D. / Welch, D. / Scifres, D. et al. | 1992
- 124
-
Polarization insensitive amplification at 1.5/spl mu/m wavelength using tensile strained multiple quantum well structuresHorikawa, H. / Xu, C.Q. / Yamada, K. / Katoh, Y. / Kamijoh, T. et al. | 1992
- 124
-
Polarization Insensitive Amplification at 1.5 m Wavelength Using Tensile Strained Multiple Quantum Well StructuresJoma, M. / Horikawa, H. / Xu, C. Q. / Yamada, K. / IEEE et al. | 1992
- 126
-
High speed high sensitivity simultaneous detection and amplification with semiconductor laser amplifiersDall'Ara, R. / Melchior, H. et al. | 1992
- 128
-
Low loss monolithic 2 x 2 laser amplifier gate switch matrixFiddyment, P.J. / Robertson, M.J. / Sully, P. et al. | 1992
- 130
-
Fast (300 ps) polarization insensitive semiconductor optical amplifier switch with low driving current (70 mA)Fernier, B. / Brosson, P. / Bayart, D. / Beaumont, R. / Leblond, F. / Morin, P. / Da Loura, G. / Jacquet, J. / Derouin, E. / Garabedian, P. et al. | 1992
- 132
-
Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption regionNonaka, K. / Tsuda, H. / Kurokawa, T. / Uenohara, H. / lwamura, H. et al. | 1992
- 136
-
Non equilibrium effects in quantum well lasersTessler, N. / Nagar, R. / Eisenstein, G. / Chandrasekhar, S. / Joiner, C.H. / Dentai, A.G. / Koren, U. / Raybon, G. et al. | 1992
- 138
-
Sub-picosecond gain dynamics in InGaAsP MQW laser amplifiersMark, J. / Mork, J. / Seltzer, C.P. et al. | 1992
- 140
-
Carrier confinement and its effect on the internal quantum efficiency and modulation response of quantum well lasersNagarajan, R. / Mirin, R.P. / Reynolds, T.E. / Bowers, J.E. et al. | 1992
- 142
-
Theoretical and experimental investigation of the effect of state filling on high speed modulation dynamics of quantum well lasersZhao, B. / Chen, T.R. / Yamada, Y. / Zhuang, Y.H. / Kuze, N. / Yariv, A. et al. | 1992
- 144
-
On Reaching the K-Limited Bandwidth in 1.6 m Compressive-Strained Quantum Well LasersWu, T. C. / Kan, S. C. / Vassilovski, D. / Lau, K. Y. / IEEE et al. | 1992
- 144
-
On reaching the k-limited bandwidth in 1.6 /spl mu/m compressive-strained quantum well lasersWu, T.C. / Kan, S.C. / Vassilovski, D. / Lau, K.Y. / Zah, C.E. / Pathak, B. / Bhat, R. / Lee, T.P. et al. | 1992
- 146
-
Direct Evidence for Transport Limited Bandwidth of 1.55 m Quantum Well LasersHangleiter, A. / Grabmaier, A. / Shoefthaler, M. / Kazrmierski, C. / IEEE et al. | 1992
- 146
-
Direct evidence for transport limited bandwidth of 1.55/spl mu/m quantum well lasersHangleiter, A. / Grabmaier, A. / Schofthaler, M. / Kazmierski, C. / Blez, M. / Ougazzaden, A. et al. | 1992
- 148
-
Differential gain reduction in quantum well lasers due to confinement factor modulationShin, S. / Su, C.B. / LaCourse, J. / Rideout, W. / Lauer, R.B. et al. | 1992
- 152
-
Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nmValster, A. / van der Poel, C.J. / Finke, M.N. / Boermans, M.J.B. et al. | 1992
- 154
-
630 nm-band AlGaInP strained MQW laser diodes with an MQB grown on misoriented substratesHiroyama, R. / Hamada, H. / Shono, M. / Honda, S. / Yodoshi, K. / Yamaguchi, T. et al. | 1992
- 156
-
Low threshold, high power, single mode 630 nm lasersGeels, R.S. / Welch, D.F. / Scifres, D.R. / Bour, D.P. / Treat, D.W. / Bringans, R.D. et al. | 1992
- 158
-
High Temperature (74C) CW Operation of 634 nm InGaAlP Laser Diodes Utilizing a Multiple Quantum BarrierRennie, J. / Okajima, M. / Watanabe, M. / Hatakoshi, G. / IEEE et al. | 1992
- 158
-
High temperature (74/spl deg/c) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrierRennie, J. / Okajima, M. / Watanabe, M. / Hatakoshi, G. et al. | 1992
- 160
-
Optimization of MQW structure in 630 nm AlGaInP laser diodes for high-temperature operationTanaka, T. / Yanagisawa, H. / Yano, S. / Minagawa, S. et al. | 1992
- 162
-
Optically pumped 370 nm UV laser form MQW Cd/ZnS/ZnS strained-layer superlatticesYamada, Y. / Mullins, J.T. / Masumoto, Y. / Taguchi, T. et al. | 1992
- 166
-
High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structureAoki, M. / Suzuki, M. / Takahashi, M. / Sano, H. / Ido, T. / Kawano, T. / Takai, A. et al. | 1992
- 168
-
High speed ultra-low chirp 1.55/spl mu/m GaInAs/AlGaInAs MQW BRS DFB lasersBlez, M. / Kazmierski, C. / Mathoorasing, D. / Quillec, M. / Gilleron, M. / Landreau, J. / Nakajima, H. et al. | 1992
- 168
-
High Speed Ultra-Low Chirp 1.55 m GaInAs/AlGaInAs MQW BRS DFB LasersBlez, M. / Kazmierski, C. / Mathoorasing, D. / Quillec, M. / IEEE et al. | 1992
- 170
-
High-speed operation of strained InGaAs/InGaAsP MQW lasersOdagawa, T. / Nakajima, K. / Tanaka, K. / Inoue, T. / Okazaki, N. / Wakao, K. et al. | 1992
- 172
-
Experimental and theoretical analysis of the carrier induced red-shifted FM-response of /spl delta//4-shifted MQW DFB LDSteinmann, M.J. / Pedersen, R.J.S. / Kotaki, Y. et al. | 1992
- 172
-
Experimental and Theoretical Analysis of the Carrier Induced Red-Shifted FM-Response of lambda/4-Shifted MQW DFB LDSteinmann, M. J. / Pedersen, R. J. S. / Kotaki, Y. / IEEE et al. | 1992
- 174
-
Analysis on fm efficiency of InGaAs/InGaAsP SCH-MQW LDs Taking Injection Carrier Transport into AccountYamazaki, H. / Yamaguchi, M. / Kitamura, M. / Mito, I. et al. | 1992
- 176
-
Comparison of vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW Diode Lasers Designed for Monolithic IntegrationRalston, J.D. / Weisser, S. / Esquivias, I. / Gallagher, D.F.G. / Tasker, P.J. / Rosenzweig, J. / Fleissner, J. et al. | 1992
- 176
-
Comparison of Vertically-Compact High-Speed GaAs and In~0~.~3~5Ga~0~.~6~5As MQW Diode Lasers Designed for Monolithic IntegrationRalston, J. D. / Weisser, S. / Esquivias, I. / Gallagher, D. F. G. / IEEE et al. | 1992
- 180
-
Strain-induced effects on the performance of AlGalnP Visible LasersHashimoto, J. / Katsuyama, T. / Shinkai, J. / Yoshida, I. / Hayashi, H. et al. | 1992
- 180
-
Strain-Induced Effects on the Performance of AlGaInP Visible LasersHashimoto, J. / Katsuyama, T. / Shinkai, J. / Yoshida, I. / IEEE et al. | 1992
- 182
-
Ordered and Disordered GaInP/AlGaInP Strained Layer Quantum Well Visible-Light Emitting Laser DiodesVan der Poel, C. J. / Valster, A. / Finke, M. N. / Boermans, M. J. B. / IEEE et al. | 1992
- 182
-
Ordered and disordered GalnP/AlGalnP Strained Layer Quantum Well Visible-Light Emitting Laser Diodesvan der Poel, C.J. / Valster, A. / Finke, M.N. / Boermans, M.I.B. et al. | 1992
- 184
-
Important carrier loss mechanisms in visible lasers revealed by hydrostatic pressureHawley, M.J. / Adams, A.R. / Valster, A. et al. | 1992
- 186
-
High temperature and high power operation of mode stabilized GaInP/AlGaInP Strained MQW LasersMannoh, M. / Kamiyama, S. / Hoshina, J. / Kidoguchi, I. / Ohta, H. / Ishibashi, A. / Ban, Y. / Ohnaka, K. et al. | 1992
- 188
-
Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding LayersUnger, P. / Bona, G.L. / Germann, R. / Roentgen, P. / Webb, D.J. et al. | 1992
- 190
-
780-mn long-cavity DBR lasers with partially corrugated gratings fabricated by compositional disordering of a quantum wellHirata, T. / Suehiro, M. / Maeda, M. / Hosomatsu, H. et al. | 1992
- 190
-
780-nm Long-Cavity DBR Lasers with Partially Corrugated Gratings Fabricated by Compositional Disordering of a Quantum WellHirata, T. / Suehiro, M. / Maeda, M. / Hihara, M. / IEEE et al. | 1992
- 194
-
Integration of a multi-wavelength compressive-strained multi-quantum-well distributed-feedback laser array with a star coupler and optical amplifiersZah, C.E. / Favire, F.J. / Pathak, B. / Bhat, R. / Caneau, C. / Lin, P.S.D. / Gozdz, A.S. / Andreadakis, N.C. / Koza, M. / Lee, T.P. et al. | 1992
- 196
-
Simultaneous operation of 10 channel tunable DFB laser arrays Using Strained-InGaAsP Multiple Quantum WellsSato, K. / Sekine, S. / Kondo, Y. / Yamamoto, M. et al. | 1992
- 198
-
Highly linear 1.55/spl mu/m strained-layer MQW DFB Lasers for Optical Analog TV Distribution SystemsZielinski, E. / Bouayad-Amine, J. / Cebulla, U. / Haisch, H. / Klenk, M. / Laube, G. / Mayer, H.P. / Weinmann, R. / Speier, P. et al. | 1992
- 198
-
Highly Linear 1.55 m Strained-Layer MQW DFB Lasers for Optical Analog TV Distribution SystemsZielinski, E. / Bouayad-Amine, J. / Cebulla, U. / Haisch, H. / IEEE et al. | 1992
- 200
-
Low threshold 1.3/spl mu/m InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor DepositionKasukawa, A. / Imajo, Y. / Namegaya, T. / Hiratani, Y. / Kikuta, T. et al. | 1992
- 200
-
Low Threshold 1.3 m InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor DepositionKasukawa, A. / Imajo, Y. / Namegaya, T. / Hiratani, Y. / IEEE et al. | 1992
- 202
-
Low threshold 1.3 /spl mu/m strained-layer Al/sub x/Ga/sub y/ln/sub 1-x-y/As Quantum Well LasersZah, C.E. / Bhat, R. / Favire, P.J. / Koza, M. / Lee, T.P. et al. | 1992
- 202
-
Low Threshold 1.3 m Strained-Layer Al~xGa~yIn~1~x~yAs Quantum Well LasersZah, C. E. / Bhat, R. / Favire, F. J. / Koza, M. / IEEE et al. | 1992
- 204
-
1.02 m Strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GalnP Buried WaveguidesIshikawa, S. / Fukagai, K. / Miyazaki, T. / Fujii, H. / IEEE et al. | 1992
- 204
-
1.02/spl mu/m strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GaInP Buried WaveguidesShin Ishikawa, / Fukagai, K. / Miyazaki, T. / Fujii, H. / Kenji Endo, et al. | 1992
- 206
-
1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laserKurakake, H. / Uchida, T. / Soda, H. / Yamazaki, S. et al. | 1992
- 206
-
1.07 m (InAs)~1/(GaAs)~2 Short Period Superlattice Strained Quantum Well Ridge Waveguide LaserKurakake, H. / Uchida, T. / Soda, H. / Yamazaki, S. / IEEE et al. | 1992
- 210
-
Large dynamic range CW single mode top surface-emitting laser with small windowGuotong Du, / Fanghai Zhao, / Xiaobo Zhang, / Dingsan Gao, / Lin, J. / Gamelin, J.K. / Wu, B. / Wang, S. / Minghwei Hong, / Mannaerts, J.P. et al. | 1992
- 212
-
CBE Grown 1.5 m GaInAsP/InP Surface Emitting LasersUchida, T. / Miyamoto, T. / Yokouchi, N. / Inaba, Y. / IEEE et al. | 1992
- 212
-
CBE grown 1.5 /spl mu/m GaInAsP/InP Surface Emitting LasersUchida, T. / Miyamoto, T. / Yokouchi, N. / Inaba, Y. / Koyama, F. / Iga, K. et al. | 1992
- 214
-
Coherent 2-D surface-emitting arrays of antiguidesMawst, L.J. / Botez, D. / Jansen, M. / Zmudzinski, C. / Ou, S.S. / Sergant, M. / Roth, T.J. / Tu, C. / Peterson, G. / Yang, J.J. et al. | 1992
- 216
-
Crossed-gratings for semiconductor lasersBour, D.P. / Reichert, W.F. / Abeles, J.H. / York, P.K. et al. | 1992
- 218
-
High power operation of phase-shifted DFB lasers with amplitude modulated coupling coefficientTalneau, A. / Charil, J. / Ougazzaden, A. / Bouley, J.C. et al. | 1992
- 220
-
Coherent high power large aperture ring oscillatorsDzurko, K. / Scifres, D. / Hardy, A. / Welch, D. / Waarts, R. et al. | 1992
- 222
-
High-power AlGaAs lasers with nonabsorbing etched mirrors based on a bent-waveguide structureGfeller, F. / Buchmann, P. / Epperlein, P.W. / Meier, H.P. / Reithmaier, J.P. et al. | 1992
- 224
-
High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser DiodesGarbuzov, D.Z. / Antonishkis, N.Y. / Il'inskaya, N.D. / Zhigulin, S.N. / Katsavets, N.I. / Kochergin, A.V. / Pyataev, V.Z. / Fuksman, M.V. et al. | 1992
- 224
-
High-Power Al-Free Buried InGaAsP/GaAs (lambda =0.8 m) Laser DiodesGarbuzov, D. Z. / Antonishkis, N. Y. / Il'Inskaya, N. D. / Zhigulin, S. N. / IEEE et al. | 1992
- 228
-
1.55 m Multi-Quantum-Well Lasers with Record Performance Obtained by Atmospheric Pressure MOVPE Using an Organometallic Phosphorous Precursor Bis (phosphinoethane)Ougazzaden, A. / Mircea, A. / Mellet, R. / Primot, G. / IEEE et al. | 1992
- 228
-
1.55/spl mu/m multi-quantum-well lasers with record performance obtained by atmospheric pressure MOVPE using an organometallic phosphorous precursor bis(phosphinoethane)Ougazzaden, A. / Mircea, A. / Mellet, R. / Primot, G. / Kazmierski, C. et al. | 1992
- 230
-
Carrier leakage in 1.3/spl mu/m SCH quantum well lasersHausser, S. / Harder, C. / Meier, H.P. et al. | 1992
- 230
-
Carrier Leakage in 1.3 m SCH Quantum Well LasersHausser, S. / Harder, C. / Meier, H. P. / IEEE et al. | 1992
- 232
-
Characteristics of the laser diode with partially intermixed GaAs/AlGaAs Quantum WellNagai, Y. / Shigihara, K. / Takami, A. / Karakida, S. / Aiga, M. et al. | 1992
- 234
-
Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active RegionMiyake, Y. / Hirayama, H. / Tamura, S. / Yoshida, J. / Arai, S. / Suematsu, Y. et al. | 1992
- 236
-
Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding LayerItaya, K. / Hatakoshi, G. / Nishikawa, Y. / Okajima, M. et al. | 1992
- 238
-
Unique top-driven lasers having record-high performance by Self-Aligned Si-Zn DiffusionZou, W.X. / Law, K.-K. / Merz, J.L. et al. | 1992
- 242
-
Effect of cavity length on the locking bandwidth of high repetition rate mode-locked semiconductor lasersAhmed, Z. / Tucker, R.S. / Lowery, A.J. / Onodera, N. et al. | 1992
- 244
-
Measurement of pulse build-up in passively mode-locked laser diodesStelmakh, N. / Pascal, D. / Lourtioz, J.-M. et al. | 1992
- 246
-
Monolithic additive pulse mode-locked quantum well laserChen, Y.K. / Wu, M.C. / Tanbun-Ek, T. / Logan, R.A. et al. | 1992
- 248
-
Sub-picosecond pulse generation at 1.3/spl mu/m by hybrid mode lockingSchell, M. / Weber, A.G. / Bimberg, D. et al. | 1992
- 248
-
Sub-Picosecond Pulse Generation at 1.3 m by Hybrid Mode LockingSchell, M. / Weber, A. G. / Bimberg, D. / IEEE et al. | 1992
- 250
-
Broadly Tunable (202 ) Mode-Locked Monolithic Laser with an Integrated Vertical Coupler FilterHansen, P. B. / Alferness, R. C. / Rayban, G. / Buhl, L. L. / IEEE et al. | 1992
- 250
-
Broadly tunable (202 /spl Aring/) mode-locked monolithic laser with an integrated vertical coupler filterHansen, P.B. / Raybon, G. / Buhl, L.L. / Koren, U. / Miller, B.I. / Young, M.G. / Koch, T.L. / Verdiell, J.-M. / Burrus, C.A. et al. | 1992
- 252
-
Three-mode coupling and intensity noise in nearly single-mode semiconductor lasersSharfin, W.F. / Schlafer, J. / Koteles, E.S. / Meslener, G.J. et al. | 1992
- 254
-
Mode-locking of high-power resonant-optical-waveguide diode laser arraysMar, A. / Helkey, R. / Bowers, J. / Botez, D. et al. | 1992
- 258
-
1.3 m MQW-DFB Laser with Negative Detuning for 80 ch-20 km AM-FDM TransmissionFujihara, K. / Ishino, M. / Yamane, S. / Fujito, K. / IEEE et al. | 1992
- 258
-
1.3 /spl mu/m MQW-DFB Laser with Negative Detuning for 80 ch-20 km AM-FDM TransmissionFujihara, K. / Ishino, M. / Yamane, S. / Fujito, K. / Sato, H. / Matsui, Y. et al. | 1992
- 260
-
Reliability of high power MQW-DFB-DC-PBH-LDs for Coherent Optical Communication System ApplicationKitamura, M. / Yamazaki, H. / Yamada, H. / Takano, S. / Kosuge, K. / Yamaguchi, M. / Mito, I. et al. | 1992
- 262
-
Spectral Linewidth Characteristics of lambda/4-Shifted MQW-DFB Lasers as a Function of Coupling CoefficientOkai, M. / Tsuchiya, T. / Takai, A. / IEEE et al. | 1992
- 262
-
Spectral linewidth characteristics of /spl lambda//4-Shifted MQW-DFB Lasers as a Function of Coupling CoefficientOkai, M. / Tsuchiya, T. / Takai, A. et al. | 1992
- 264
-
Spectral dynamics of long wavelength quantum well distributed feedback diode lasers under gain switchingWhite, I.H. / Griffin, P.S. / Williams, K.A. / Thompson, G.H.B. / Whiteaway, J.E.A. / Garrett, B. et al. | 1992
- 266
-
Cross-correlation measurements of intensity noise from the two facets of DFB lasers during linewidth rebroadeningGoobar, E. / Rigole, P. / Schatz, R. et al. | 1992
- 268
-
Ultrawide wavelength tuning with single longitudinal mode by Super Structure Grating (SSG) DBR LasersTohmori, Y. / Yoshikuni, Y. / Tamamura, T. / Yamamoto, M. / Kondo, Y. / Ishii, H. et al. | 1992
- 270
-
Tunable DBR Laser for Wavelength Conversion of 2.5 Gbit/s SignalsPedersen, R.J.S. / Mikkelsen, B. / Durhuus, T. / Steinmann, M.J. / Stubkjaer, K.E. / Oberg, M. / Nilsson, S. et al. | 1992
- 272
-
6 THz Range Frequency Conversion of 2.5 Gbit/s Signals by a 1.55 /spl mu/m MQW Based Widely Tunable Y-LaserSchilling, M. / Idler, W. / Baums, D. / Dutting, K. / Laube, G. / Wunstel, K. / Hildebrand, O. et al. | 1992
- 272
-
6 THz Range Frequency Conversion of 2.5 Gbit/s Signals by a 1.55 m MQW Based Widely Tunable Y-LaserSchilling, M. / Idler, W. / Baums, D. / Duetting, K. / IEEE et al. | 1992
- i
-
13th IEEE international semiconductor laser conference [front matter]| 1992