Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe [3179-44] (Englisch)
- Neue Suche nach: Adamiec, K.
- Neue Suche nach: Gawron, W.
- Neue Suche nach: Piotrowski, J.
- Neue Suche nach: Adamiec, K.
- Neue Suche nach: Gawron, W.
- Neue Suche nach: Piotrowski, J.
- Neue Suche nach: Rogalski, A.
In:
Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology
3179
;
251-255
;
1996
-
ISBN:
-
ISSN:
- Aufsatz (Konferenz) / Print
-
Titel:Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe [3179-44]
-
Beteiligte:Adamiec, K. ( Autor:in ) / Gawron, W. ( Autor:in ) / Piotrowski, J. ( Autor:in ) / Rogalski, A. / Military University of Technology, Warsaw; Institute of Applied Physics
-
Kongress:Symposium; 12th, Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology ; 1996 ; Zakopane; Poland
-
Erschienen in:Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology , 3179 ; 251-255PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING , 3179 ; 251-255
-
Verlag:
- Neue Suche nach: SPIE
-
Erscheinungsdatum:01.01.1996
-
Format / Umfang:5 pages
-
Anmerkungen:Also known as SSCs'96
-
ISBN:
-
ISSN:
-
Medientyp:Aufsatz (Konferenz)
-
Format:Print
-
Sprache:Englisch
-
Schlagwörter:
-
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 2
-
Recent advances in III-nitride materials, characterization and device applicationsRazeghi, Manijeh / Zhang, Xiaolong / Kung, Patrick / Saxler, Adam W. / Walker, Danielle / Lim, Khee Y. / Kim, K. S. et al. | 1997
- 2
-
Recent advances in III-nitride materials: characterization and device applications (Invited Paper) [3179-01]Razeghi, M. / Zhang, X. / Kung, P. / Saxler, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 12
-
Growth-physics of silicon-based heterostructures in MBE processes (Invited Paper) [3179-02]Herman, M. A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 12
-
Growth physics of silicon-based heterostructures in MBE processesHerman, Marian A. et al. | 1997
- 25
-
RF sputtering deposition of CdTe on GaAs substrateAdamiec, Krzysztof / Rutkowski, Jaroslaw / Bednarek, S. / Michalski, E. et al. | 1997
- 25
-
RF sputtering deposition of CdTe on GaAs substrate [3179-03]Adamiec, K. / Rutkowski, J. / Bednarek, S. / Michalski, E. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 28
-
Intersubband absorption in multiple quantum wellsZaluzny, Miroslaw / Nalewajko, C. et al. | 1997
- 28
-
Intersubband absorption in multiple quantum wells (Invited Paper) [3179-04]Zaluzny, M. / Nalewajko, C. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 33
-
Photovoltaic effects from nano- and microstructured SiUnal, B. / Bayliss, Sue C. / Harris, P. J. et al. | 1997
- 33
-
Photovoltaic effects from nano- and microstructured Si (Invited Paper) [3179-05]Uenal, B. / Bayliss, S. C. / Harris, P. J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 41
-
Effect of optical phonon confinement on Raman spectra of porous silicon [3179-06]Zuk, J. / Kulik, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 41
-
Effect of optical phonon confinement on Raman spectra of porous siliconZuk, J. / Kulik, Miroslaw et al. | 1997
- 46
-
Time-resolved spectroscopy of low-dimensional structures based on porous siliconLukasiak, Zbigniew / Bala, Waclaw / Kowalczyk, Andrzej / Nossarzewska-Orlowska, Elzbieta et al. | 1997
- 46
-
Time-resolved spectroscopy of low-dimensional structures based on porous silicon [3179-07]Lukasiak, Z. / Bala, W. / Kowalczyk, A. / Nossarzewska-Orlowska, E. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 52
-
New unsubstituted phthalocyanines: structure-properties relationKubiak, Ryszard / Janczak, Jan et al. | 1997
- 52
-
New unsubstituted phthalocyanines: structure-properties relation [3179-08]Kubiak, R. / Janczak, J. / Trzebiatowski, W. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 56
-
Nanosize microstructure formation by anodizing the thin film structuresParkoun, V. M. / Petrov, N. P. / Lynkov, L. M. et al. | 1997
- 56
-
Nanosize microstructure formation by anodizing the thin film structures [3179-09]Parkoun, V. M. / Petrov, N. P. / Lynkov, L. M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 59
-
Detection of oxygen in porous silicon by nuclear reaction 16O(alpha,alpha)16OKulik, Miroslaw / Zuk, J. / Krzyzanowska, H. / Ochalski, T. J. / Kobzev, A. P. et al. | 1997
- 59
-
Detection of oxygen in porous silicon by nuclear reaction ^1^6O(,)^1^6O [3179-10]Kulik, M. / Zuk, J. / Krzyzanowska, H. / Ochalski, T. J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 62
-
Spectroscopical characterization of bacterial reaction center Langmuir-Blodgett monolayersWrobel, Danuta / Goc, Jacek / Planner, Alfons / Hara, M. / Miyake, J. et al. | 1997
- 62
-
Spectroscopic characterization of bacterial reaction center Langmuir-Blodgett monolayers [3179-11]Wrobel, D. / Goc, J. / Planner, A. / Hara, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 66
-
Thin film materials on the basis of silver organoacetylide for photovisualizationShutova, Tatiana G. / Mikhailovskii, Yu. K. / Agabekov, Vladimir E. et al. | 1997
- 66
-
Thin film material on the basis of silver organoacetylide for photovisualization [3179-12]Shutova, T. G. / Mikhailovskii, Y. K. / Agabekov, V. E. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 70
-
Laser-assisted deposition technique for thin semiconductor layers and low-dimensional structures growthSizov, Fiodor F. / Plyatsko, Sergei V. et al. | 1997
- 70
-
Laser-assisted deposition technique for thin semiconductor layers and low-dimensional structures growth (Invited Paper) [3179-13]Sizov, F. F. / Plyatsko, S. V. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 79
-
Nanocrystalline diamond for medicine [3179-14]Mitura, S. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 79
-
Nanocrystalline diamond for medicineMitura, Stanislaw et al. | 1997
- 87
-
Optical and electrical tests of uniformity of rf PCVD carbon coatings [3179-15]Langer, M. / Niedzielski, P. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 87
-
Optical and electrical tests of uniformity of rf PCVD carbon coatingsLanger, Malgorzata / Niedzielski, Piotr et al. | 1997
- 90
-
Nanotribological investigations of NCD coatings covering metal slitting saws [3179-16]Golabczak, A. / Niedzielski, P. / Mitura, S. / Zak, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 90
-
Nanotribological investigations of NCD coatings covering metal slitting sawsGolabczak, A. / Niedzielski, Piotr / Mitura, Stanislaw / Zak, J. et al. | 1997
- 94
-
Preparation, morphology, and electrical properties of TiN~1~-~xC~x thin layers [3179-17]Wokulski, Z. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 94
-
Preparation, morphology, and electrical properties of TiN1-xCx thin layersWokulski, Z. et al. | 1997
- 99
-
Lithographic properties of perylenetetracarboxylic acid derivative films [3179-18]Azarko, V. A. / Scharendo, E. V. / Agabekov, V. E. / Obuchov, V. E. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 99
-
Lithographic properties of perylenetetracarboxylic acid derivative filmsAzarko, Victor A. / Scharendo, E. V. / Agabekov, Vladimir E. / Obuchov, V. E. / Tochitsky, Eduard I. et al. | 1997
- 104
-
Nanostructural investigations of cuprate superconductors by scanning probe methods (Invited Paper) [3179-19]Susla, B. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 104
-
Nanostructural investigations of cuprate superconductors by scanning probe methodsSusla, Bronislaw et al. | 1997
- 110
-
Photoreflectance spectroscopy for investigations of semiconductor structuresMisiewicz, Jan et al. | 1997
- 110
-
Photoreflectance spectroscopy for investigations of semiconductor structures (Invited Paper) [3179-20]Misiewicz, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 121
-
Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution [3179-21]Ciorga, M. / Bryja, L. / Misiewicz, J. / Paszkiewicz, R. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 121
-
Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solutionCiorga, Mariusz / Bryja, Leszek / Misiewicz, Jan / Paszkiewicz, Regina / Panek, Marek / Paszkiewicz, Bogdan / Tlaczala, Marek J. et al. | 1997
- 125
-
Photoreflectance and photoluminescence of InGaAs/GaAs structuresMisiewicz, Jan / Ciorga, Mariusz / Sek, G. / Bryja, Leszek / Radziewicz, D. / Korbutowicz, Ryszard / Panek, Marek / Tlaczala, Marek J. et al. | 1997
- 125
-
Photoreflectance and photoluminescence of InGaAs/GaAs structures [3179-22]Misiewicz, J. / Ciorga, M. / Sek, G. / Bryja, L. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 129
-
2D hole gas in GaAs/(AlGa)As heterostructures investigated by photoreflectance spectroscopySitarek, Piotr / Misiewicz, Jan / Hansen, Ole P. et al. | 1997
- 129
-
2D hole gas in GaAsI(AlGa)As heterostructures investigated by photoreflectance spectroscopy [3179-23]Sitarek, P. / Misiewicz, J. / Hansen, O. P. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 133
-
Observation of the new lines in photoluminescence from MOCVD-grown GaAs [3179-24]Ciorga, M. / Misiewicz, J. / Tlaczala, M. J. / Panek, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 133
-
Observation of the new lines in photoluminescence from MOCVD-grown GaAsCiorga, Mariusz / Misiewicz, Jan / Tlaczala, Marek J. / Panek, Marek / Veje, Erling et al. | 1997
- 137
-
GaAs/AlGaAs complex structures examined by photoreflectance spectroscopySek, G. / Misiewicz, Jan / Kaniewska, Maria / Reginski, Kazimierz / Muszalski, Jan et al. | 1997
- 137
-
GaAs/AlGaAs complex structures examined by photoreflectance spectroscopy [3179-25]Sek, G. / Misiewicz, J. / Kaniewska, M. / Reginski, K. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 141
-
Optical properties of Zn~xMg~1~-~xSe/GaAs heterojunctions grown by MBE [3179-26]Bala, W. / Glowacki, G. / Gapinski, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 141
-
Optical properties of ZnxMg1-xSe/GaAs heterojunctions grown by MBEBala, Waclaw / Glowacki, Grzegorz / Gapinski, Adam et al. | 1997
- 147
-
Optical and recombination parameters of GaSe obtained from interference spectroscopy of transmittance, reflectance, photoconductivity, and photomagnetoelectric responsesKepinska, M. / Nowak, Marian et al. | 1997
- 147
-
Optical and recombination parameters of GaSe obtained from interference spectroscopy of transmittance, reflectance, photoconductivity, and photomagnetoelectric responses [3179-27]Kepinska, M. / Nowak, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 151
-
Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te, GaAs:Si, and MQW on GaAsLoncierz, B. / Nowak, Marian et al. | 1997
- 151
-
Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te, GaAs:Si, and MQW on GaAs [3179-28]Loncierz, B. / Nowak, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 158
-
Lifetimes and band structure of electroluminescence of ZnS:Mn based cells [3179-29]Chimczak, E. / Bertrandt-Zytkowiak, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 158
-
Lifetimes and band structure of electroluminescence of ZnS:Mn based cellsChimczak, Eugeniusz / Bertrandt-Zytkowiak, Miroslawa et al. | 1997
- 162
-
Laser scanning tomograph as the tool for investigation of semiconductor materials [3179-30]Galas, J. / Daszkiewicz, M. / Kozlowski, T. / Blocki, N. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 162
-
Laser scanning tomograph as the tool for investigation of semiconductor materialsGalas, Jacek / Daszkiewicz, Marek / Kozlowski, Tomasz / Blocki, Narcyz et al. | 1997
- 168
-
AgBr microcrystals studied by scanning tunneling microscopyGordon, W. S. / Szuba, S. et al. | 1997
- 168
-
AgBr microcrystals studied by scanning tunneling microscopy [3179-31]Gordon, W. S. / Szuba, S. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 172
-
X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures [3179-32]Zaumseil, P. / Fischer, G. G. / Misiuk, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 172
-
X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperaturesZaumseil, Peter / Fischer, G. G. / Misiuk, Andrzej et al. | 1997
- 176
-
X-ray determination of the thermal expansion of TiN, TiC and Ti(N,C) crystals [3179-33]Wokulska, K. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 176
-
X-ray determination of the thermal expansion of TiN, TiC and Ti(N,C) crystalsWokulska, Krystyna et al. | 1997
- 180
-
Structural characteristics and applications of zirconium dioxide formed by super-high-speed thermal treatment [3179-34]Lynkov, L. M. / Soloviev, V. V. / Zhdanovich, S. V. / Petrov, N. P. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 180
-
Structural characteristics and applications of zirconium dioxide formed by super-high-speed thermal treatmentLynkov, L. M. / Soloviev, V. V. / Zhdanovich, S. V. / Petrov, N. P. / Bogush, V. A. et al. | 1997
- 184
-
Influence of internal structure on electrical properties of 1,4-cis polybutadiene films [3179-35]Tkaczyk, S. W. / Swiatek, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 184
-
Influence of internal structure on electrical properties of 1,4-cis polybutadiene filmsTkaczyk, S. W. / Swiatek-Prokop, Jozef et al. | 1997
- 190
-
Electron drift mobility in some aromatic hydrocarbonsKania, S. / Kondrasiuk, J. / Bak, Grzegorz W. et al. | 1997
- 190
-
Electron drift mobility in some aromatic hydrocarbons [3179-36]Kania, S. / Kondrasiuk, J. / Bak, G. W. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 194
-
Electric permittivity and remanent polarization in polycrystalline Ba(Ti1-xSnx)O3Kajtoch, Czestaw / Zmija, Jozef et al. | 1997
- 194
-
Electric permittivity and remanent polarization in polycrystalline Ba(Ti~1~-~xSn~x)O~3 [3179-37]Kajtoch, C. / Zmija, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 200
-
HgCdTe focal plane arrays for high performance infrared camerasKozlowski, Lester J. et al. | 1997
- 200
-
HgCdTe focal plane arrays for high-performance infrared cameras (Invited Paper) [3179-38]Kozlowski, L. J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 212
-
PtSi Schottky-barrier infrared FPAs with CDS readoutKimata, Masafumi / Ozeki, Tatsuo / Nunoshita, Masahiro / Ito, Sho et al. | 1997
- 212
-
PtSi Schottky-barrier infrared FPAs with CDS readout (Invited Paper) [3179-39]Kimata, M. / Ozeki, T. / Nunoshita, M. / Ito, S. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 224
-
Infrared thermal detectors versus photon detectors: II. focal plane arrays (Invited Paper) [3179-40]Rogalski, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 224
-
Infrared thermal detectors versus photon detectors: II. focal plane arraysRogalski, Antoni et al. | 1997
- 235
-
Isotype heterojunction in HgCdTe photodiodes [3179-41]Rutkowski, J. / Jozwikowska, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 235
-
Isotype heterojunction in HgCdTe photodiodesRutkowski, Jaroslaw / Jozwikowska, Alina et al. | 1997
- 242
-
Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modelingMalachowski, Michal J. / Rogalski, Antoni et al. | 1997
- 242
-
Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modeling [3179-42]Malachowski, M. J. / Rogalski, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 247
-
InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]Rutkowski, J. / Raczynska, J. / Rogalski, A. / Adamiec, K. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 247
-
InAsSb heterojunction photodiodes grown by liquid phase epitaxyRutkowski, Jaroslaw / Raczynska, Jolanta / Rogalski, Antoni / Adamiec, Krzysztof / Larkowski, Waldemar et al. | 1997
- 251
-
Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTeAdamiec, Krzysztof / Gawron, Waldemar / Piotrowski, Jozef et al. | 1997
- 251
-
Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe [3179-44]Adamiec, K. / Gawron, W. / Piotrowski, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 256
-
Lithium niobate as the substratum for the SAW acceleration sensor [3179-45]Filipiak, J. / Solarz, L. / Ostrowski, J. / Kopycki, C. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 256
-
Lithium niobate as the substratum for the SAW acceleration sensorFilipiak, Jerzy / Solarz, Lech / Ostrowski, Jerzy / Kopycki, Cezary et al. | 1997
- 260
-
Activated lithium tetraborate and calcium sulphate in radiation dosimetryWarkocki, Stanislaw / Korman, A. / Zmija, Jozef / Klosowicz, Stanislaw J. / Majchrowski, Andrzej et al. | 1997
- 260
-
Activated lithium tetraborate and calcium sulphate in radiation dosimetry [3179-46]Warkocki, S. / Korman, A. / Zmija, J. / Klosowicz, S. J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 263
-
Neodymium doped GGG laser compared with YAP, SLGO and YAG lasersKaczmarek, Slawomir M. / Kopczynski, Krzysztof / Lukasiewicz, Tadeusz / Durygin, A. N. / Solskii, Ivan M. et al. | 1997
- 263
-
Neodymium-doped GGG laser compared with YAP, SLGO and YAG lasers [3179-47]Kaczmarek, S. / Kopczynski, K. / Lukasiewicz, T. / Durygin, A. N. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 268
-
Influence of gamma radiation on performance of Nd^3^+-doped SrLaGa~3O~7? lasers [3179-48]Kaczmarek, S. / Kopczynski, K. / Matkovskii, A. O. / Pajaczkowska, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 268
-
Influence of gamma radiation on performance of Nd3+ doped SrLaGa3O7 lasersKaczmarek, Slawomir M. / Kopczynski, Krzysztof / Matkovskii, Andrej O. / Pajaczkowska, Anna / Pracka, Izabella et al. | 1997
- 274
-
Recent advances in TLM algorithms for semiconductor transport (Invited Paper) [3179-49]De Cogan, D. / Chakrabarti, A. / Kenny, C. P. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 274
-
Recent advances in TLM algorithms for semiconductor transportde Cogan, Donard / Chakrabarti, A. / Kenny, C. P. et al. | 1997
- 287
-
Kinetics of luminescence due to spatial correlation of traps [3179-50]Mandowski, A. / Swiatek, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 287
-
Kinetics of luminescence due to spatial correlation of trapsMandowski, Arkadiusz / Swiatek-Prokop, Jozef et al. | 1997
- 294
-
Simple methods for the analysis of TL glow curves [3179-51]Mandowski, A. / Mandowska, E. / Swiatek, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 294
-
Simple methods for the analysis of TL glow curvesMandowski, Arkadiusz / Mandowska, Ewa / Swiatek-Prokop, Jozef et al. | 1997
- 298
-
Space-charge-perturbed currents due to continuous carrier injection [3179-52]Tomaszewicz, W. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 298
-
Space-charge-perturbed currents due to continuous carrier injectionTomaszewicz, W. et al. | 1997
- 302
-
Determination of recombination cross section for free electron in n-CuInS2Cybulski, D. / Opanowicz, A. et al. | 1997
- 302
-
Determination of recombination cross section for free electron in n-CuInS~2 [3179-53]Cybulski, D. / Opanowicz, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 306
-
Determination of the activation energy of electron traps with fractional glow techniqueOpanowicz, A. / Pietrucha, Piotr et al. | 1997
- 306
-
Determination of the activation energy of electron traps with fractional glow technique [3179-54]Opanowicz, A. / Pietrucha, P. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 310
-
Determination of trap depth by analysis of the thermoluminescence peak shape [3179-55]Lukas, T. / Opanowicz, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 310
-
Determination of the trap depth by analysis of the thermoluminescence peak shapeLukas, T. / Opanowicz, A. et al. | 1997