Simulators of dynamic thermal fields for thermal imaging systems bench test [5126-31] (Englisch)
- Neue Suche nach: Stefanov, V.
- Neue Suche nach: Kravtchenko, V.
- Neue Suche nach: Research, Development and Production Centre ORION (Russia)
- Neue Suche nach: Stefanov, V.
- Neue Suche nach: Kravtchenko, V.
- Neue Suche nach: Filachev, A. M.
- Neue Suche nach: Dirochka, A. I.
- Neue Suche nach: Research, Development and Production Centre ORION (Russia)
In:
Photoelectronics and night vision devices
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258-268
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2003
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Simulators of dynamic thermal fields for thermal imaging systems bench test [5126-31]
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Beteiligte:Stefanov, V. ( Autor:in ) / Kravtchenko, V. ( Autor:in ) / Filachev, A. M. / Dirochka, A. I. / Research, Development and Production Centre ORION (Russia)
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Kongress:International conference; 17th, Photoelectronics and night vision devices ; 2002 ; Moscow
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Erschienen in:PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 5126 ; 258-268
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsdatum:01.01.2003
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Format / Umfang:11 pages
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Photoelectronics for a new generation of electron-optical equipmentPonomarenko, V. P. / Filachev, A. M. et al. | 2003
- 13
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Femto-attosecond photoelectronic imaging (the present state of the art and new trends)Schelev, Mikhail Y. et al. | 2003
- 21
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Analysis of physical and technological aspects of monolithic optoelectronic devices for on-board systems of remote sounding: I. Review of optoelectronic technologiesErmakov, Oleg N. et al. | 2003
- 28
-
Analysis of physical and technological aspects of monolithic optoelectronic devices for on-board systems of remote sounding: II. Experimental investigationErmakov, Oleg N. et al. | 2003
- 37
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The solid state silicon photomultiplier for a wide range of applicationsGeorgievskya, E. A. / Klemin, S. N. / Filatov, L. A. / Buzhan, P. J. / Dolgoshein, B. A. / Ilyin, A. L. / Kantsherov, V. A. / Kaplin, V. A. / Karakash, A. I. / Pleshko, A. D. et al. | 2003
- 43
-
HgCdTe photodiodes current-voltage characteristics simulationBoltar, K. O. / Iakovleva, N. I. et al. | 2003
- 52
-
Infrared focal plane arrays: state of the art and development trendsFilachev, A. M. / Ponomarenko, V. P. / Taubkin, I. I. / Ushakova, M. B. et al. | 2003
- 86
-
The 128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVDBoltar, K. O. / Iakovleva, N. I. / Golovin, S. V. / Ponomarenko, V. P. / Stafeev, V. I. / Bourlakov, I. D. / Moiseev, A. N. / Kotkov, A. P. / Dorofeev, V. V. et al. | 2003
- 91
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The 128x128 and 288x384 InSb array photodetective assemblies for 3- to 5-μm spectral rangeAkimov, Vladimir M. / Chishko, V. F. / Dirochka, Alexander I. / Kasatkin, I. L. / Klimanov, Ye. A. / Kravtchenko, N. V. / Lopukhin, A. A. / Pasekov, V. F. et al. | 2003
- 98
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The 4×288 linear FPA on the heteroepitaxial Hg1-xCdxTe baseDerkach, Yu. P. / Dvoretski, C A. / Golenkov, A. G. / Klimenko, A. G. / Kozlov, A. I. / Marchishin, I. V. / Ovsyuk, V. N. / Reva, V. P. / Sidorov, Yu. G. / Sizov, F. F. et al. | 2003
- 105
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LWIR 2×256 focal plane array for time delay and integrationSaginov, L. D. / Solyakov, V. N. / Mansvetov, N. G. / Bourlakov, I. D. / Boltar, K. O. / Klimanov, E. A. et al. | 2003
- 108
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The recent and prospective developments of cooled IR FPAs for double application at Electron NRIArutunov, V. A. / Vasilyev, I. S. / Ivanov, V. G. / Prokofyev, A. E. et al. | 2003
- 118
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The 1x384 hybrid linear infrared focal plane arrays on InAs MOS structure for spectrometric applicationsBazovkin, V. M. / Valisheva, N. A. / Guzev, A. A. / Efimov, V. M. / Kovchavtsev, Anatolii P. / Kuryshev, Georgii L. / Lee, I. I. / Stroganov, A. S. et al. | 2003
- 129
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Quantum well and quantum dot infrared photodetectors: physics of operation and modelingRyzhii, Victor / Ryzhii, Maxim / Khmyrova, Irina / Suris, Robert / Mitin, Vladimir / Shur, Michael et al. | 2003
- 141
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Quantum well infrared photoconductors in infrared detectors technologyRogalski, A. et al. | 2003
- 153
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Photoelectrical characteristics of structures with nonrectangular quantum wellsKulikov, Vladimir B. / Budkin, I. V. et al. | 2003
- 160
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Responsivity of multiple quantum well structures grown by MOCVD at normal incidenceKulikov, Vladimir B. / Avetisyan, G. H. / Vasilevskaya, L. M. / Zalevsky, I. D. / Budkin, I. V. / Padalitsa, A. A. et al. | 2003
- 167
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Photoconductivity gain by Si(Ge) p-n junction containing quantum dotsDvurechenskii, A. V. / Ryazantsev, Ivan A. / Kovchavsev, Anatolii P. / Kuryshev, Georgii L. / Nikivorov, Alexander I. / Pchelyakov, Oleg P. et al. | 2003
- 178
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3- to 5 μm InGaAs/AlGaAs QWIP heterostructure growth by metal organic chemical vapor depositionBudkin, I. V. / Bulaev, P. V. / Vacilevskay, L. M. / Zalevsky, I. D. / Kuznetsov, U. A. / Kulikov, V. B. / Marmalyuk, A. A. / Nikitin, D. B. / Padalitsa, A. A. / Petrovsky, A. V. et al. | 2003
- 178
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3- to 5-mum InGaAs/AlGaAs QWIP heterostructure growth by metal organic chemical vapor deposition [5126-19]Budkin, I. V. / Bulaev, P. V. / Vasilevskaya, L. M. / Zalevsky, I. D. / Kuznetsov, U. A. / Kulikov, V. B. / Marmalyuk, A. A. / Nikitin, D. B. / Padalitsa, A. A. / Petrovsky, A. V. et al. | 2003
- 181
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Special features of noise measurement of photosensitive quantum well structures [5126-20]Khatountsev, A. I. / Kotov, V. P. / Budkin, I. V. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 181
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Special features of noise measurement of photosensitive quantum well structuresKhatountsev, A. I. / Kotov, V. P. / Budkin, I. V. et al. | 2003
- 187
-
Infrared photodetector on the basis of low-dimensional structureHuseynov, E. / Salmanov, V. et al. | 2003
- 187
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Infrared photodetector on the basis of low-dimensional structure [5126-21]Huseynov, E. / Salmanov, V. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 191
-
Properties of Schottky barrierp-CdxHg1-xTe structures with metal-tunnel transparent dielectricDamnjanovic, V. / Ponomarenko, V. P. et al. | 2003
- 191
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Properties of Schottky-barrier p-Cd~xHg~1~-~xTe structures with metal-tunnel transparent dielectric [5126-22]Damnjanovic, V. / Ponomarenko, V. P. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 200
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Properties of Schottky-barrier photodiodes based on Cd~xHg~1~-~xTe with tunnel transparent dielectric [5126-23]Damnjanovic, V. / Ponomarenko, V. P. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 200
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The properties of Schottky-barrier photodiodes based on CdxHg1-xTe with tunnel transparent dielectricDamnjanovic, V. / Ponomarenko, V. P. et al. | 2003
- 206
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High-speed photodetectors and photodetective assemblies for receiving laser radiation in 0.3- to 11-mum spectral range [5126-24]Filachev, A. M. / Ponomaremko, V. P. / Taubkin, I. I. / Burlakov, I. D. / Boltar, K. O. / Gorelik, L. I. / Kravtchenko, N. V. / Kulymanov, A. V. / Kulikov, K. M. / Lozhnikov, V. Y. et al. | 2003
- 206
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High-speed photodetectors and photodetective assemblies for receiving laser radiation in 0.3- to 11μm spectral rangeFilachev, A. M. / Ponomarenko, V. P. / Taubkin, I. I. / Burlakov, I. D. / Boltar, K. O. / Gorelik, L. I. / Kravtchenko, N. V. / Kulymanov, A. V. / Kulikov, K. M. / Lozhnikov, V. Y. et al. | 2003
- 215
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Isolating surface and bulk contributions in an HgCdTe junction diode [5126-25]Gopal, V. / Gupta, S. / Bhan, R. K. / Pal, R. / Chaudhary, P. K. / Kumar, V. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 215
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Isolating surface and bulk contributions in an HgCdTe junction diodeGopal, Vishnu / Gupta, Sudha / Bhan, R. K. / Pal, R. / Chaudhary, P. K. / Kumar, V. et al. | 2003
- 223
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Simple computer model of an IR-photoconductorDiakonov, L. I. / Susov, E. V. / Chekanova, Galina V. et al. | 2003
- 223
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Simple computer model of an IR-photoconductor [5126-26]Diakonov, L. I. / Susov, E. V. / Chekanova, G. V. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 232
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Heterostructures based on In-Ga-Al-N alloy system as promising media for photoelectronics and integrated optoelectronics [5126-27]Ermakov, O. N. / Martynov, V. N. / Alexandrova, G. A. / Stacharny, S. A. / Voytiuk, A. A. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 232
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Heterostructures based on In-Ga-Al-N alloy system as promising media for photoelectronics and integrated optoelectronicsErmakov, Oleg N. / Martynov, Valery N. / Alexandrova, Galina A. / Stacharny, Sergey A. / Voytiuk, Alexander A. et al. | 2003
- 241
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Performance of thermoelectrically cooled MCT photoconductorsLartsev, Ivan Y. / Nikitine, Mikhail S. / Chekanova, Galina V. et al. | 2003
- 241
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Performance of thermoelectrically cooled MCT photoconductors [5126-28]Lartsev, I. Y. / Nikitine, M. S. / Chekanova, G. V. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 248
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Variations of MCT photoconductor performance with background flux density [5126-29]Lartsev, I. Y. / Nikitine, M. S. / Chekanova, G. V. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 248
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Variations of MCT photoconductor performance with background flux densityLartsev, Ivan Y. / Nikitine, Mikhail S. / Chekanova, Galina V. et al. | 2003
- 255
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Image merging deviceBorisova, I. V. / Gorenok, V. N. / Oparin, A. N. / Popov, P. G. et al. | 2003
- 255
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Image merging device [5126-30]Borisova, I. V. / Gorenok, V. N. / Oparin, A. N. / Popov, P. G. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 258
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Simulators of dynamic thermal fields for thermal imaging systems bench test [5126-31]Stefanov, V. / Kravtchenko, V. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 258
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Simulators of dynamic thermal fields for thermal imaging systems bench testStefanov, Valeri / Kravtchenko, Vitaly et al. | 2003
- 269
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Transient electronic processes in MIS-photo targets of vidicons sensitive to midband infrared radiation [5126-32]Boroshnev, A. V. / Kovtonyuk, N. P. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 269
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Transient electronic processes in MIS-photo targets of vidicons sensitive to midband infrared radiationBoroshnev, A. V. / Kovtonyuk, N. P. et al. | 2003
- 276
-
Utmost sensitivity of methods of visualization of zones of the increased concentration impurity of gases and vapors in the air with the help of thermal imagers and image intensifiersBakumenko, Vladimir L. / Beguchev, V. P. / Sviridov, A. N. et al. | 2003
- 276
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Utmost sensitivity of methods of visualization of zones of the increased concentration impurity of gases and vapors in the air with the help of thermal imagers and image intensifiers [5126-33]Bakumenko, V. L. / Beguchev, V. P. / Sviridov, A. N. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 286
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Analysis of utmost capabilities of detection of objects with the help of an observation thermal imagerSviridov, A. N. et al. | 2003
- 286
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Analysis of utmost capabilities of detection of objects with the help of an observation thermal imager [5126-34]Sviridov, A. N. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 301
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Calculation of utmost parameters of active vision system based on nonscanning thermal imagerSviridov, A. N. et al. | 2003
- 301
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Calculation of utmost parameters of active vision system based on nonscanning thermal imager [5126-35]Sviridov, A. N. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 317
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Calculation of thermal contrasts and potentials of the infrared images in spectral ranges 3-5 mum and 8-14 mum at the availability and in the absence of counterradiation of the environment [5126-36]Sviridov, A. N. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 317
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Calculation of thermal contrasts and potentials of the infrared images in spectral ranges 3-5 μm and 8-14 μm at the availability and in the absence of counterradiation of the environmentSviridov, A. N. et al. | 2003
- 331
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Laser-and-holographic measuring complex of FSPC GIPO [5126-37]Ivanov, V. P. / Lukin, A. V. / Melnikov, A. N. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 331
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Laser-and-holographic measuring complex of FSPC GIPOIvanov, Vladimir P. / Lukin, Anatoliy V. / Melnikov, Andrey N. et al. | 2003
- 338
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A 1 - to 11-mum optical code sensor with Gray code system [5126-38]Lartsev, I. Y. / Komov, A. A. / Nikitine, M. S. / Chekanova, G. V. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 338
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A 1-to 11 μm optical code sensor with Gray Code systemLartsev, Ivan Y. / Komov, Alexey A. / Nikitine, Mikhail S. / Chekanova, Galina V. et al. | 2003
- 341
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Photocapacitance effect in narrow bandgap PbSnTe (In)Klimov, Alexander E. / Shumsky, Vladimir N. et al. | 2003
- 341
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Photocapacitance effect in narrow bandgap PbSnTe [5126-39]Klimov, A. E. / Shumsky, V. N. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 347
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Reverse currents of double-layer heterojunction diodes in conditions of Shockley-Read and Auger carrier generationSokolovsky, Bogdan S. / Pysarevsky, V. K. et al. | 2003
- 347
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Reverse currents of double-layer heterojunction diodes in conditions of Shockley-Read and Auger carrier generation [5126-40]Sokolovsky, B. S. / Pysarevsky, V. K. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 352
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Effect of photo-induced space charge on dependence of intrinsic threshold photoresistor amplification on two-level recombination impurity concentrationKholodnov, Vyacheslav A. / Serebrennikov, Pavel S. et al. | 2003
- 352
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Effect of photo-induced space charge on dependence of intrinsic threshold photoresistor amplification on two-level recombination impurity concentration [5126-41]Kholodnov, V. A. / Serebrennikov, P. S. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 357
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Near-contact vary-band layers as a means of suppressing the saturation of amplification in threshold CdHgTe photoconductive devices (photoresistors) [5126-42]Kholodnov, V. A. / Drugova, A. A. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 357
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Near-contact vary-band layers as a means of suppressing the saturation of amplification in threshold CdHgTe photoconductive devices (photoresistors)Kholodnov, Vyacheslav A. / Drugova, Albina A. et al. | 2003
- 364
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Photosensitivity of heterostructure S1-xGex/Si taking into account free-carrier absorption of radiation and length of hot carrier energy pathSerebrennikov, Pavel S. et al. | 2003
- 364
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Photosensitivity of heterostructure S~1~-~xGe~x/Si taking into account free-carrier absorption of radiation and length of hot carrier energy path [5126-43]Serebrennikov, P. S. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 367
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On the degree to which the increase in the concentration of the recombination centers raises the efficiency of interband photoexcitation of carriers under weak optical radiation [5126-44]Kholodnov, V. A. / Drugova, A. A. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 367
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On the degree to which the increase in the concentration of the recombination centers raises the efficiency of interband photoexcitation of carriers under weak optical radiationKholodnov, Vyacheslav A. / Drugova, Albina A. et al. | 2003
- 381
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Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals [5126-45]Abdinov, A. S. / Babayeva, R. F. / Ragimova, N. A. / Rzayev, R. M. / Eyvazova, G. H. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 381
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Sensitization of IR photosensitivity by electrical field in indium selenide layered crystalsAbdinov, A. S. / Babayeva, R. F. / Ragimova, N. A. / Rzayev, R. M. / Eyvazova, G. H. et al. | 2003
- 386
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Negative infrared photoconductivity in CdS~1~-~xSe~x films [5126-46]Abdinov, A. S. / Jafarov, M. A. / Mamedov, H. M. / Nasirov, E. F. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 386
-
Negative infrared photoconductivity in CdS1-xSexfilmsAbdinov, A. S. / Jafarov, M. A. / Mamedov, H. M. / Nasirov, E. F. et al. | 2003
- 391
-
Peculiarities of diffusion p-n junction formation in CdxHd1-xTe graded-bandgap epitaxial structuresVlasov, A. P. / Pysarevsky, V. K. / Shevchenko, A. V. / Bonchyk, A. Y. / Barcz, A. et al. | 2003
- 391
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Peculiarities of diffusion p-n junction formation in Cd~xHd~1~-~xTe graded-bandgap epitaxial structures [5126-47]Vlasov, A. P. / Pysarevsky, V. K. / Shevchenko, A. V. / Bonchyk, A. Y. / Barcz, A. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 398
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The state of the art and prospects of CdxHg1-xTe molecular beam epitaxyVaravin, V. S. / Gutakovsky, A. K. / Dvoretsky, S. A. / Kartashev, V. A. / Latyshev, A. V. / Mikhailov, N. N. / Pridachin, D. N. / Remestnik, V. G. / Rukhlitsky, S. V. / Sabinina, I. V. et al. | 2003
- 398
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The state of the art and prospects of Cd~xHg~1~-~xTe molecular beam epitaxy [5126-48]Varavin, V. S. / Gutakovsky, A. K. / Dvoretsky, S. A. / Kartashev, V. A. / Latyshev, A. V. / Mikhailov, N. N. / Pridachin, D. N. / Remestnik, V. G. / Rukhlitsky, S. V. / Sabinina, I. V. et al. | 2003
- 407
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Polycrystalline layers of silicon-germanium alloy for uncooled IR bolometers [5126-49]Chistokhin, I. B. / Michailovsky, I. P. / Fomin, B. I. / Cherepov, E. I. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 407
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Polycrystalline layers of silicon-germanium alloy for uncooled IR bolometersChistokhin, I. B. / Michailovsky, I. P. / Fomin, B. I. / Cherepov, E. I. et al. | 2003
- 415
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A control device: a beam structure of charged particlesKozlov, A. N. / Smolyaninov, V. D. / Eremin, A. P. / Filachev, A. M. et al. | 2003
- 415
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A control device: a beam structure of charged particles [5126-50]Kozlov, A. N. / Smolyaninov, V. D. / Eremin, A. P. / Filachev, A. M. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 420
-
Features of growth and photoconductivity of epitaxial films of the Pb1-xMnxTe(Ga) solid solutionsNuriev, I. R. / Farzaliyev, S. S. / Djalilova, Kh. D. / Sadigov, R. M. et al. | 2003
- 420
-
Features of growth and photoconductivity of epitaxial films of the Pb~1~-~xMn~xTe (Ga) solid solutions [5126-51]Nuriev, I. R. / Farzaliyev, S. S. / Djalilova, K. D. / Sadigov, R. M. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 424
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Deposition of carbonic films from plasma of arc discharge without a cathode spot [5126-52]Gasanov, I. / Gurbanov, I. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 424
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Deposition of carbonic films from plasma of arc discharge without a cathode spotGasanov, I. / Gurbanov, I. et al. | 2003
- 427
-
Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg1-xCdxTe under ion-beam millingBogoboyashchiy, Victor V. / Izhnin, Igor I. et al. | 2003
- 427
-
Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg~1~-~xCd~xTe under ion-beam milling [5126-53]Bogoboyashchiy, V. V. / Izhnin, I. I. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 434
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Epitaxial MnCdHgTe layers obtained by RF sputtering in mercury plasma [5126-54]Kavych, V. / Lozynska, M. / Mansurov, L. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 434
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Epitaxial MnCdHgTe layers obtained by RF sputtering in mercury plasmaKavych, Volodymyr / Lozynska, Maria / Mansurov, Leonid et al. | 2003
- 440
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Isoperiodical Pb~1~-~xSn~xTe(In)/PbTe~1~-~ySe~y heterojunctions obtained in ultrahigh vacuum [5126-55]Salaev, E. Y. / Nuriev, I. R. / Nazarov, A. M. / Gadjieva, S. I. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 440
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Isoperiodical Pb1-xSnxTe(In)/PbTe1-ySeyheterojunctions obtained in ultrahigh vacuumSalaev, Eldar Y. / Nuriev, I. R. / Nazarov, A. M. / Gadjieva, S. I. et al. | 2003
- 444
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Functionalities of Cd~1~-~xZn~xSe films deposited from a water solution in IR region of a spectrum [5126-56]Abdinov, A. S. / Jafarov, M. A. / Nasirov, E. F. / Mamedov, H. M. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 444
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Functionalities of Cd1-xZnxSe films deposited from a water solution in IR region of a spectrumAbdinov, A. S. / Jafarov, M. A. / Nasirov, E. F. / Mamedov, H. M. et al. | 2003
- 451
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Electron diffraction study of photosensitive heterostructures PbSnTe-PbTe grown by MBE [5126-57]Dirochka, A. I. / Kononov, A. S. / Serebrennikov, P. S. / Suleimanov, N. A. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 451
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Electron diffraction study of photosensitive heterostructures PbSnTe-PbTe grown by MBEDirochka, A. I. / Kononov, A. S. / Serebrennikov, P. S. / Suleimanov, N. A. et al. | 2003
- 454
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Low-frequency noise spectra of high-quality MCT photoconductors [5126-58]Nikitine, M. S. / Chekanova, G. V. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 454
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Low-frequency noise spectra of high-quality MCT photoconductorsNikitine, Mikhail S. / Chekanova, Galina V. et al. | 2003
- 458
-
Improvement of optical method of oxygen-in-silicon characterization and design consideration in measuring setup for detailed nondestructive mapping of interstitial oxygenVinetski, Yu. R. / Titov, A. G. / Trishenkov, M. A. et al. | 2003
- 458
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Improvement of optical method of oxygen-in-silicon characterization and design consideration in measuring setup for detailed nondestructive mapping of interstitial oxygen [5126-59]Vinetski, Y. R. / Titov, A. G. / Trishenkov, M. A. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 472
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Influence of ionizing irradiation on photoelectric properties of GaS~xSe~1~-~x solid solutions [5126-60]Askerov, K. A. / Ismaylov, F. I. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 472
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Influence of the ionizing irradiation on photoelectric properties of GaSxSe1-xsolid solutionsAskerov, K. A. / Ismaylov, F. I. et al. | 2003
- 475
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A comparative study and optimal choice of the method of determination of interstitial oxygen-in-silicon concentration from optical transmission spectra [5126-61]Vinetski, Y. R. / Famitski, V. I. / Titov, A. G. / Khakuashev, P. E. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 475
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A comparative study and optimal choice of the method of determination of interstitial oxygen-in-silicon concentration from optical transmission spectraVinetski, Yu. R. / Famitski, V. I. / Titov, A. G. / Khakuashev, P. E. et al. | 2003
- 480
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Influence of ionizing radiation on efficiency of photodiodes on the basis of gallium tellurideAskerov, K. A. / Isayev, F. K. / Karayev, D. I. / Aliyev, R. Y. et al. | 2003
- 480
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Influence of ionizing radiation on efficiency of photodiodes on the basis of gallium telluride [5126-62]Askerov, K. A. / Isayev, F. K. / Karayev, D. I. / Aliyev, R. Y. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 483
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Influence of penetrating radiation on the spectral characteristics of indium selenide doped by silver and germanium [5126-63]Askerov, K. A. / Abasova, A. Z. / Isayev, F. K. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 483
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Influence of penetrating radiation on the spectral characteristics of indium selenide doped by silver and germaniumAskerov, K. A. / Abasova, A. Z. / Isayev, F. K. et al. | 2003
- 487
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Influence of ionizing irradiation on the basic characteristics of cooled photoresistors on the basis Cd~xHg~1~-~xTe [5126-64]Salayev, E. Y. / Abdinov, D. S. / Askerov, K. A. / Research, Development and Production Centre ORION (Russia) et al. | 2003
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Influence of ionizing irradiation on the basis characteristics of cooled photoresistors on the basis CdxHg1-xTeSalaev, Eldar Y. / Abdinov, D. S. / Askerov, K. A. et al. | 2003
- 492
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Magnetothermoelectrical and adhesive properties of commutation contacts of thermoelements on the basis of extruded samples of Bi85Sb15solid solutionTagiyev, M. M. et al. | 2003
- 492
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Magnetothermoelectrical and adhesive properties of commutation contacts of thermoelements on the basis of extruded samples of Bi~8~5Sb~1~5 solid solution [5126-65]Tagiyev, M. M. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 495
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Three-stage thermoelectrical module for ∼200 K temperature level [5126-66]Aliyeva, T. D. / Akhundova, N. M. / Abdinov, D. S. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 495
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Three-stage thermoelectrical module for ~200 K temperature levelAliyeva, T. D. / Akhundova, N. M. / Abdinov, D. S. et al. | 2003
- 498
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The hybrid cooler on the basis of extruded samples Bi85Sb15solid solutionsTagiyev, M. M. / Gasanov, N. E. / Abdinova, G. D. et al. | 2003
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The hybrid cooler on the basis of extruded samples Bi~8~5Sb~1~5 solid solutions [5126-67]Tagiyev, M. M. / Gasanov, N. E. / Abdinova, G. D. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 501
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Material on the basis of PbTe for p-branches of thermoelectric coolers [5126-68]Agayev, Z. F. / Allahverdiyev, E. A. / Murtuzov, G. M. / Abdinov, D. S. / Research, Development and Production Centre ORION (Russia) et al. | 2003
- 501
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Material on the basis of PbTe for p-branches of thermoelectric coolersAgayev, Z. F. / Allahverdiyev, E. A. / Murtuzov, G. M. / Abdinov, D. S. et al. | 2003
- 504
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Photodetectors with thermoelectric coolers for 3- to 5-μm and 10- to 12-μm spectral regionBarkhalov, B. S. et al. | 2003
- 504
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Photodetectors with thermoelectric coolers for 3- to 5-mum and 10- to 12-mum spectral regions [5126-69]Barkhalov, B. S. / Research, Development and Production Centre ORION (Russia) et al. | 2003