Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD (Englisch)
- Neue Suche nach: Xie, Z. Y.
- Neue Suche nach: Wei, C. H.
- Neue Suche nach: Li, L. Y.
- Neue Suche nach: Edgar, J. H.
- Neue Suche nach: Materials Research Society
- Neue Suche nach: Xie, Z. Y.
- Neue Suche nach: Wei, C. H.
- Neue Suche nach: Li, L. Y.
- Neue Suche nach: Edgar, J. H.
- Neue Suche nach: Pearton, S. J.
- Neue Suche nach: Materials Research Society
In:
GaN and related alloys
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3.39.1
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1999
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
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Beteiligte:Xie, Z. Y. ( Autor:in ) / Wei, C. H. ( Autor:in ) / Li, L. Y. ( Autor:in ) / Edgar, J. H. ( Autor:in ) / Pearton, S. J. / Materials Research Society
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Kongress:Symposium, GaN and related alloys ; 1998 ; Boston; MA
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Erschienen in:GaN and related alloys ; 3.39.1MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 537 ; 3.39.1
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Verlag:
- Neue Suche nach: Materials Research Society
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Erscheinungsort:Warrendale, Pa.
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Erscheinungsdatum:01.01.1999
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Format / Umfang:3.39.1
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 11.8.1
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Defect Luminescence in Heavily Mg Doped GaNReshchikov, M. A. / Yi, G.-C. / Wessels, B. W. / Materials Research Society et al. | 1999
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InGaN/GaN/AlGaN-Based LEDs and Laser DiodesNakamura, S. / Senoh, M. / Nagahama, S. / Iwasa, N. / Materials Research Society et al. | 1999
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Pyroelectric and Piezoelectric Properties of GaN-Based MaterialsShur, M. S. / Bykhovski, A. D. / Gaska, R. / Materials Research Society et al. | 1999
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Near Defect-Free GaN SubstratesPorowski, S. / Materials Research Society et al. | 1999
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Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback LasersHofstetter, D. / Thornton, R. L. / Romano, L. T. / Bour, D. P. / Materials Research Society et al. | 1999
- G2
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Composition dependence of the band gap energy of InxGa1-xN layers on GaN (x<=0.15) grown by metal-organic chemical vapor depositionWagner, J. / Ramakrishnan, A. / Behr, D. / Maier, M. / Herres, N. / Kunzer, M. / Obloh, H. / Bachem, K.H. et al. | 1999
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Mechanisms of Optical Gain in Cubic GaN and InGaNHolst, J. / Hoffmann, A. / Broser, I. / Frey, T. / Materials Research Society et al. | 1999
- G3
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Piezoelectric level splitting in GaInN/GaN quantum wellsWetzel, C. / Takeuchi, T. / Amano, H. / Akasaki, I. et al. | 1999
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Temperature Effect on the Quality of AlN Thin FilmsThompson, M. P. / Drews, A. R. / Huang, C. / Auner, G. W. / Materials Research Society et al. | 1999
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Disordering of InGaN/GaN Superlattices After High-Pressure AnnealingMcCluskey, M. D. / Romano, L. T. / Krusor, B. S. / Hofstetter, D. / Materials Research Society et al. | 1999
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Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAsLisker, M. / Krtschil, A. / Witte, H. / Christen, J. / Materials Research Society et al. | 1999
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Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved PhotoluminescenceKim, H. S. / Lin, J. Y. / Jiang, H. X. / Chow, W. W. / Materials Research Society et al. | 1999
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Influence of Doping on the Lattice Dynamics of Gallium NitrideKaschner, A. / Siegle, H. / Hoffmann, A. / Thomsen, C. / Materials Research Society et al. | 1999
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Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam EpitaxyEinfeldt, S. / Boettcher, T. / Hommel, D. / Selke, H. / Materials Research Society et al. | 1999
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Defect States in SiC/GaN- and SiC/AlGaN/GaN-Heterostructures Characterized by Admittance and Photocurrent SpectroscopyWitte, H. / Krtschil, A. / Lisker, M. / Christen, J. / Materials Research Society et al. | 1999
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Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBELantier, R. / Rizzi, A. / Guggi, D. / Lueth, H. / Materials Research Society et al. | 1999
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p- and n-Type Doping of MBE Grown Cubic GaN/GaAs EpilayersAs, D. J. / Simonsmeier, T. / Busch, J. / Schoettker, B. / Materials Research Society et al. | 1999
- G3
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Extended defects in GaN: a theoretical studyElsner, J. / Frauenheim, T. / Haugk, M. / Gutierrez, R. / Jones, R. / Heggie, M.I. et al. | 1999
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Strong Piezoelectric Effects in Unstrained GaN Quantum WellsLanger, R. / Simon, J. / Konovalov, O. / Pelekanos, N. T. / Materials Research Society et al. | 1999
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High-Quality Hydrothermal ZnO CrystalsSuscavage, M. / Harris, M. / Bliss, D. / Yip, P. / Materials Research Society et al. | 1999
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Optical Investigations of AlGaN on GaN Epitaxial FilmsSteude, G. / Christmann, T. / Meyer, B. K. / Goeldner, A. / Materials Research Society et al. | 1999
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Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum WellsShan, W. / Ager, J. W. / Walukiewicz, W. / Haller, E. E. / Materials Research Society et al. | 1999
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Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN~2Zhu, L. D. / Maruska, P. H. / Norris, P. E. / Yip, P. W. / Materials Research Society et al. | 1999
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Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN Using Tungsten MaskKawaguchi, Y. / Nambu, S. / Sone, H. / Yamaguchi, M. / Materials Research Society et al. | 1999
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Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN AlloysMuth, J. F. / Brown, J. D. / Johnson, M. A. L. / Yu, Z. / Materials Research Society et al. | 1999
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Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Bandstructures and Device ConsequencesSher, A. / Van Schilfgaarde, M. / Berding, M. A. / Krishnamurthy, S. / Materials Research Society et al. | 1999
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Studies on Carbon as Alternative p-Type Dopant for Gallium NitrideBirkle, U. / Fehrer, M. / Kirchner, V. / Einfeldt, S. / Materials Research Society et al. | 1999
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GaN p-n Structures Fabricated by Mg Ion ImplantationKalinina, E. V. / Solov'ev, V. A. / Zubrilov, A. S. / Dmitriev, V. A. / Materials Research Society et al. | 1999
- G6
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Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactorChuang, R.W. / Zou, A.Q. / Lee, H.P. / Dong, Z.J. / Xiong, F.F. / Shih, R. / Bremser, M. / Juergensen, H. et al. | 1999
- G6
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Piezoelectric field effect on optical properties of GaN/GaInN/AlGaN quantum wellsIm, Jin Seo / Kollmer, H. / Gfroerer, O. / Off, J. / Scholz, F. / Hangleiter, A. et al. | 1999
- G6
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NiIn as an ohmic contact to p-GaNIngerly, D.B. / Chang, Y.A. / Chen, Y. et al. | 1999
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Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes With Quantum WellsYunovich, A. E. / Kudryashov, V. E. / Turkin, A. N. / Kovalev, A. N. / Materials Research Society et al. | 1999
- G6
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Rapid thermal processing of implanted GaN up to 1500 degree CCao, X.A. / Pearton, S.J. / Singh, R.K. / Abernathy, C.R. / Han, J. / Shul, R.J. / Rieger, D.J. / Zolper, J.C. / Wilson, R.G. / Fu, M. et al. | 1999
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Crystal Structure and Defects in Nitrogen-Deficient GaNOktyabrsky, S. / Dovidenko, K. / Sharma, A. K. / Joshkin, V. / Materials Research Society et al. | 1999
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Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum WellsCho, Y.-H. / Schmidt, T. J. / Bidnyk, S. / Song, J. J. / Materials Research Society et al. | 1999
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Thermal Stability of GaN Investigated by Raman ScatteringKuball, M. / Demangeot, F. / Frandon, J. / Renucci, M. A. / Materials Research Society et al. | 1999
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Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch EpitaxyHickman, R. / Klaassen, J. J. / Van Hove, J. M. / Wowchak, A. M. / Materials Research Society et al. | 1999
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Monitoring and Controlling of Strain During MOCVD of AlGaN for UV OptoelectronicsHan, J. / Crawford, M. H. / Shul, R. J. / Hearne, S. J. / Materials Research Society et al. | 1999
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Fabrication of Smooth GaN-Based Laser FacetsStocker, D. A. / Schubert, E. F. / Boutros, K. S. / Redwing, J. M. / Materials Research Society et al. | 1999
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Piezoelectric Properties of GaN Self-Organized Quantum DotsDaudin, B. / Widmann, F. / Simon, J. / Feuillet, G. / Materials Research Society et al. | 1999
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Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-SurfactantHirayama, H. / Aoyagi, Y. / Tanaka, S. / Materials Research Society et al. | 1999
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GaN Homoepitaxy for Device ApplicationsKamp, M. / Kirchner, C. / Schwegler, V. / Pelzmann, A. / Materials Research Society et al. | 1999
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Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor DepositionGherasimova, M. / Gaffey, B. / Mitev, P. / Guido, L. J. / Materials Research Society et al. | 1999
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Microstructure of GaN Grown on (111) Si by MOCVDFollstaedt, D. M. / Han, J. / Provencio, P. / Fleming, J. G. / Materials Research Society et al. | 1999
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Epitaxial Lateral Overgrowth of GaN With Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase EpitaxyZhang, R. / Zhang, L. / Hansen, D. M. / Boleslawski, M. P. / Materials Research Society et al. | 1999
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Homoepitaxial and Heteroepitaxial Gallium Nitride Grown by Molecular Beam EpitaxyFoxon, C. T. / Cheng, T. S. / Korakakis, D. / Novikov, S. V. / Materials Research Society et al. | 1999
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Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect TransistorsRuden, P. P. / Albrecht, J. D. / Sutandi, A. / Binari, S. C. / Materials Research Society et al. | 1999
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Doping of AlGaN AlloysVan de Walle, C. G. / Stampfl, C. / Neugebauer, J. / McCluskey, M. D. / Materials Research Society et al. | 1999
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Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam EpitaxyGrandjean, N. / Massies, J. / Leroux, M. / Lauegt, M. / Materials Research Society et al. | 1999
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Dry and Wet Etching for Group III NitridesAdesida, I. / Youtsey, C. / Ping, A. T. / Khan, F. / Materials Research Society et al. | 1999
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Contact Issues of GaN TechnologyQiao, D. / Yu, L. S. / Lau, S. S. / Sullivan, G. J. / Materials Research Society et al. | 1999
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Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via Metalorganic Vapor-Phase Epitaxy (MOVPE)Tadatomo, K. / Ohuchi, Y. / Okagawa, H. / Itoh, H. / Materials Research Society et al. | 1999
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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN FilmsRobins, L. H. / Paul, A. J. / Parker, C. A. / Roberts, J. C. / Materials Research Society et al. | 1999
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Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaNToth, M. / Fleischer, K. / Phillips, M. R. / Materials Research Society et al. | 1999
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Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaNChen, W. M. / Buyanova, I. A. / Wagner, M. / Monemar, B. / Materials Research Society et al. | 1999
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The Behavior of Ion-Implanted Hydrogen in Gallium NitrideMyers, S. M. / Headley, T. J. / Hills, C. R. / Han, J. / Materials Research Society et al. | 1999
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Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral OvergrowthColtrin, M. E. / Willan, C. C. / Bartram, M. E. / Han, J. / Materials Research Society et al. | 1999
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Electronic Structure and Optical Properties of ZnGeN~2Limpijumnong, S. / Rashkeev, S. N. / Lambrecht, W. R. L. / Materials Research Society et al. | 1999
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Damage-Free Photo-Assisted Cryogenic Etching of GaN as Evidenced by Reduction of Yellow LuminescenceHsieh, J. T. / Hwang, J. M. / Hwang, H. L. / Hung, W. H. / Materials Research Society et al. | 1999
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Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam EpitaxyHoemmerich, U. / Seo, J. T. / Thaik, M. / MacKenzie, J. D. / Materials Research Society et al. | 1999
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Influence of Active Nitrogen Species on the Nitridation Rate of SapphirePtak, A. J. / Ziemer, K. S. / Millecchia, M. R. / Stinespring, C. D. / Materials Research Society et al. | 1999
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Structure of AlN on Si (111) Deposited With Metalorganic Vapor Phase EpitaxyRehder, E. / Zhou, M. / Zhang, L. / Perkins, N. R. / Materials Research Society et al. | 1999
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Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum WellsLefebure, P. / Gil, B. / Allegre, J. / Mathieu, H. / Materials Research Society et al. | 1999
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Spectroscopy of Proton Implanted GaNWeinstein, M. G. / Stavola, M. / Song, C. Y. / Bozdog, C. / Materials Research Society et al. | 1999
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Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based HeterojunctionsHo, W. Y. / Fong, W. K. / Surya, C. / Tong, K. Y. / Materials Research Society et al. | 1999
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Theory of the Gain Characteristics of InGaN/AlGaN QD LasersAndreev, A. D. / O'Reilly, E. P. / Materials Research Society et al. | 1999
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Focused Ion Beam Etching of GaNFlierl, C. / White, I. H. / Kuball, M. / Heard, P. J. / Materials Research Society et al. | 1999
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Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic BehaviorKaminska, E. / Piotrowska, A. / Jasinski, J. / Kozubowski, J. / Materials Research Society et al. | 1999
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Cubic InGaN Grown by MOCVDLi, J. B. / Yang, H. / Zheng, L. X. / Xu, D. P. / Materials Research Society et al. | 1999
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Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural PropertiesGrandjean, N. / Massies, J. / Leroux, M. / Lauegt, M. / Materials Research Society et al. | 1999
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Piezoelectric Level Splitting in GalnN/GaN Quantum WellsWetzel, C. / Takeuchi, T. / Amano, H. / Akasaki, I. / Materials Research Society et al. | 1999
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Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium NitrideReuter, E. E. / Zhang, R. / Kuech, T. F. / Bishop, S. G. / Materials Research Society et al. | 1999
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GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of GalliumBartram, M. E. / Creighton, J. R. / Materials Research Society et al. | 1999
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Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBEPiquette, E. C. / Bridger, P. M. / Beach, R. A. / McGill, T. C. / Materials Research Society et al. | 1999
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Optical Properties of Si-Doped Al~xGa~1~-~xN/Al~yGa~1~-~yN (x = 0.24-0.53, y = 0.11) Multi-Quantum-Well StructuresHirayama, H. / Aoyagi, Y. / Materials Research Society et al. | 1999
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Characterization of Flicker Noise in GaN Based MODFETs at Low Drain BiasHo, W. Y. / Fong, W. K. / Surya, C. / Tong, K. Y. / Materials Research Society et al. | 1999
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Behavior of W and WSi~x Contact Metallization on n- and p-Type GaNCao, X. A. / Ren, F. / Lothian, J. R. / Pearton, S. J. / Materials Research Society et al. | 1999
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Group-III Nitride Etch Selectivity in BCl~3/Cl~2 ICP PlasmasShul, R. J. / Zhang, L. / Willison, C. G. / Han, J. / Materials Research Society et al. | 1999
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Focused Ion Beam Micromachining of GaN Photonic DevicesChyr, I. / Steckl, A. J. / Materials Research Society et al. | 1999
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Characterization of Be-Implanted GaN Annealed at High TemperaturesRonning, C. / Linthicum, K. J. / Carlson, E. P. / Hartlieb, P. J. / Materials Research Society et al. | 1999
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Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium SourceZhang, L. / Zhang, R. / Boleslawski, M. P. / Kuech, T. F. / Materials Research Society et al. | 1999
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Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire SubstratesYu, Z. / Johnson, M. A. L. / Brown, J. D. / El-Masry, N. A. / Materials Research Society et al. | 1999
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Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion IrradiationGoodman, S. A. / Auret, F. D. / Koschnick, F. K. / Spaeth, J.-M. / Materials Research Society et al. | 1999
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Temperature Dependence of Bound Exciton Emissions in GaNChtchekine, D. G. / Gilliland, G. D. / Feng, Z. C. / Chua, S. J. / Materials Research Society et al. | 1999
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Inductively Coupled Plasma Etching of III-Nitrides in Cl~2/Xe, Cl~2/Ar and Cl~2/HeCho, H. / Hahn, Y. B. / Hays, D. C. / Jung, K. B. / Materials Research Society et al. | 1999
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Material Properties of GaN in the Context of Electron DevicesMorkoc, H. / Cingolani, R. / Lambrecht, W. / Gil, B. / Materials Research Society et al. | 1999
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Composition Dependence of the Bandgap Energy of In~xGa~1~-~xN Layers on GaN (x 0.15) Grown by Metalorganic Chemical Vapor DepositionWagner, J. / Ramakrishnan, A. / Behr, D. / Maier, M. / Materials Research Society et al. | 1999
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Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral OvergrowthMao, Z. / McKernan, X. / Carter, C. B. / Yang, W. / Materials Research Society et al. | 1999
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Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase EpitaxyPaskova, T. / Svedberg, E. B. / Madsen, L. D. / Yakimova, R. / Materials Research Society et al. | 1999
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Relaxation Phenomena in GaN/AlN/6H-SiC HeterostructuresEdwards, N. V. / Batchelor, A. D. / Buyanova, I. A. / Madsen, L. D. / Materials Research Society et al. | 1999
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GaN: From Selective Area to Epitaxial Lateral OvergrowthLi, X. / Bishop, S. G. / Coleman, J. J. / Materials Research Society et al. | 1999
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Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth TechniquesLinthicum, K. J. / Gehrke, T. / Thomson, D. B. / Tracy, K. M. / Materials Research Society et al. | 1999
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Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTsChiu, S.-Y. / Anwar, A. F. M. / Wu, S. / Materials Research Society et al. | 1999
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Effect of Oxygen Ion Implantation in Gallium NitrideJiang, W. / Weber, W. J. / Thevuthasan, S. / Exarhos, G. J. / Materials Research Society et al. | 1999
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Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) SiliconBidnyk, S. / Little, B. D. / Cho, Y. H. / Krasinski, J. / Materials Research Society et al. | 1999
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Ensemble Monte Carlo Study of Electron Transport in Bulk Indium NitrideBellotti, E. / Doshi, B. / Brennan, K. F. / Ruden, P. P. / Materials Research Society et al. | 1999
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Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDsKennedy, T. A. / Glaser, E. R. / Carlos, W. E. / Ruden, P. P. / Materials Research Society et al. | 1999
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Generation Recombination Noise in GaN Photoconducting DetectorsMisra, M. / Doppalapudi, D. / Sampath, A. V. / Moustakas, T. D. / Materials Research Society et al. | 1999
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Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)Gillis, H. P. / Christopher, M. B. / Martin, K. P. / Choutov, D. A. / Materials Research Society et al. | 1999
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Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum WellsCho, Y.-H. / Little, B. D. / Gainer, G. H. / Song, J. J. / Materials Research Society et al. | 1999
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Mechanism for Radiative Recombination in In~0~.~1~5Ga~0~.~8~5N/GaN Multiple Quantum Well StructuresMonemar, B. / Bergman, J. P. / Dalfors, J. / Pozina, G. / Materials Research Society et al. | 1999
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Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide SubstrateGehrke, T. / Linthicum, K. J. / Thomson, D. B. / Rajagopal, P. / Materials Research Society et al. | 1999
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Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor DepositionKim, J.-H. / Yang, G. M. / Choi, S. C. / Choi, J. Y. / Materials Research Society et al. | 1999
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Effects of Susceptor Geometry on GaN Growth on Si(111) With a New MOCVD ReactorGao, Y. / Gulino, D. A. / Higgins, R. / Materials Research Society et al. | 1999
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Enhanced GaN Decomposition at MOVPE PressuresKoleske, D. D. / Wickenden, A. E. / Henry, R. L. / Twigg, M. E. / Materials Research Society et al. | 1999
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A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device ApplicationsJohnson, M. A. L. / Yu, Z. / Brown, J. D. / Koeck, F. A. / Materials Research Society et al. | 1999
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Modeling of a GaN Based Static Induction TransistorBunea, G. E. / Dunham, S. T. / Moustakas, T. D. / Materials Research Society et al. | 1999
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Niln as an Ohmic Contact to P-GaNIngerly, D. B. / Chang, Y. A. / Chen, Y. / Materials Research Society et al. | 1999
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Phonon Dynamics and Lifetimes of AlN and GaN CrytallitesBergman, L. / Alexson, D. / Nemanich, R. J. / Dutta, M. / Materials Research Society et al. | 1999
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Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam EpitaxySeong, T.-Y. / Bae, I.-T. / Zhao, Y. / Tu, C. W. / Materials Research Society et al. | 1999
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Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVDXie, Z. Y. / Wei, C. H. / Li, L. Y. / Edgar, J. H. / Materials Research Society et al. | 1999
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Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step ProcessMarchand, H. / Ibbetson, J. P. / Fini, P. T. / Wu, X. H. / Materials Research Society et al. | 1999
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Defect Complexes and Non-Equilibrium Processes Underlying the p-Type Doping of GaNReboredo, F. A. / Pantelides, S. T. / Materials Research Society et al. | 1999
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Monte Carlo Simulation of Hall Effect in n-Type GaNAlbrecht, J. D. / Ruden, P. P. / Bellotti, E. / Brennan, K. F. / Materials Research Society et al. | 1999
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Photoluminescence of FS-GaN Treated in Alcoholic Sulfide SolutionsZhilyaev, Y. V. / Kompan, M. E. / Konenkova, E. V. / Raevskii, S. D. / Materials Research Society et al. | 1999
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Piezoelectric Field Effect on Optical Properties of GaN/GalnN/AlGaN Quantum WellsIm, J. S. / Kollmer, H. / Gfroerer, O. / Off, J. / Materials Research Society et al. | 1999
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Rapid Thermal Processing of Implanted GaN Up to 1500CCao, X. A. / Pearton, S. J. / Singh, R. K. / Abernathy, C. R. / Materials Research Society et al. | 1999
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Study of Thin Films Polarity of Group III NitridesDovidenko, K. / Oktyabrsky, S. / Narayan, J. / Razeghi, M. / Materials Research Society et al. | 1999
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Physics-Based Intrinsic Model for AlGaN/GaN HEMTsWu, S. / Webster, R. T. / Anwar, A. F. M. / Materials Research Society et al. | 1999
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Etch Processing of III-V NitridesEddy, C. R. / Materials Research Society et al. | 1999
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Ion Channeling Analysis of Gallium Nitride Implanted With DeuteriumWampler, W. R. / Myers, S. M. / Materials Research Society et al. | 1999
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Optical and Structural Properties of Er^3^+-Doped GaN Grown by MBEBirkhahn, R. H. / Hudgins, R. / Lee, D. S. / Lee, B. K. / Materials Research Society et al. | 1999
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TEM Study of Defects in Laterally Overgrown GaN LayersLiliental-Weber, Z. / Benamara, M. / Swider, W. / Washburn, J. / Materials Research Society et al. | 1999
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Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaNGarter, M. / Birkhahn, R. / Steckl, A. J. / Scofield, J. / Materials Research Society et al. | 1999
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Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)Hiroyama, Y. / Tamura, M. / Materials Research Society et al. | 1999
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Thermal Residual Stress Modeling in AlN and GaN Multilayer SamplesWang, K. / Reeber, R. R. / Materials Research Society et al. | 1999
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Properties of Epitaxial ZnO Thin Films for GaN and Related ApplicationsShen, H. / Wraback, M. / Pamulapati, J. / Liang, S. / Materials Research Society et al. | 1999
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Growth and Characterization of B~xGa~1~-~xN on 6H-SiC (0001) by MOVPEWei, C. H. / Xie, Z. Y. / Edgar, J. H. / Zeng, K. C. / Materials Research Society et al. | 1999
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Interface Effects on the Persistent Photoconductivity in Thin GaN and AlGaN FilmsSeifert, O. P. / Kirfel, O. / Munzel, M. / Hirsch, M. T. / Materials Research Society et al. | 1999
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Theoretical Studies of ZnO and Related Mg~xZn~1~-~xO Alloy BandstructuresLambrecht, W. R. L. / Limpijumnong, S. / Segall, B. / Materials Research Society et al. | 1999
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Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane SapphireSumiya, M. / Ohnishi, T. / Tanaka, M. / Ohtomo, A. / Materials Research Society et al. | 1999
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Thermal Annealing of InGaN/GaN Strained-Layer Quantum WellChan, M. C. Y. / Tsang, K.-O. / Li, E. H. / DenBaars, S. P. / Materials Research Society et al. | 1999
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Photoelectrochemical Etching of In~xGa~1~-~xNCho, H. / Donovan, S. M. / Abernathy, C. R. / Pearton, S. J. / Materials Research Society et al. | 1999
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Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum WellsSchmidt, T. J. / Bidnyk, S. / Cho, Y.-H. / Fischer, A. J. / Materials Research Society et al. | 1999
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Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase EpitaxyKim, S. / Li, X. / Coleman, J. J. / Zhang, R. / Materials Research Society et al. | 1999
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Optical Gain Spectra in InGaN/GaN Quantum Wells With the Compositional FluctuationsUenoyama, T. / Materials Research Society et al. | 1999
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Nitridation of GaAs (001)-2x4 Surface Studied by Auger Electron SpectroscopyAksenov, I. / Nakada, Y. / Okumura, H. / Materials Research Society et al. | 1999
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Growth of Oriented Thick Films of Gallium Nitride From the MeltDyck, J. S. / Kash, K. / Grossner, M. T. / Hayman, C. C. / Materials Research Society et al. | 1999
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Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride StructuresZheleva, T. S. / Smith, S. A. / Thomson, D. B. / Gehrke, T. / Materials Research Society et al. | 1999
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Eptiaxial Growth of III-Nitride Layers on Aluminum Nitride SubstratesSchowalter, L. J. / Shusterman, Y. / Wang, R. / Bhat, I. / Materials Research Society et al. | 1999
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Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing TemperatureFujita, S. / Funato, M. / Park, D.-C. / Ikenaga, Y. / Materials Research Society et al. | 1999
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Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Water MOVPE ReactorChuang, R. W. / Zou, A. Q. / Lee, H. P. / Dong, Z. J. / Materials Research Society et al. | 1999
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Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam EpitaxyMurphy, M. J. / Foutz, B. E. / Chu, K. / Wu, H. / Materials Research Society et al. | 1999
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Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam EpitaxyChen, H. / Smith, A. R. / Feenstra, R. M. / Greve, D. W. / Materials Research Society et al. | 1999
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Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature InterlayersAmano, H. / Iwaya, M. / Hayashi, N. / Kashima, T. / Materials Research Society et al. | 1999
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Luminescence From Erbium-Doped Gallium Nitride Thin FilmsZavada, J. M. / Thaik, M. / Hoemmerich, U. / MacKenzie, J. D. / Materials Research Society et al. | 1999
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Spectroscopic Studies in InGaN Quantum WellsChichibu, S. F. / Sota, T. / Wada, K. / DenBaars, S. P. / Materials Research Society et al. | 1999
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GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time EllipsometryLosurdo, M. / Capezzuto, P. / Bruno, G. / Materials Research Society et al. | 1999
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Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-EpitaxyThomson, D. B. / Gehrke, T. / Linthicum, K. J. / Rajagopal, P. / Materials Research Society et al. | 1999
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Comparative Growth of AlN on Singular and Off-Axis 6H and 4H-SiC by MOCVDWilson, S. / Dickens, C. S. / Griffin, J. / Spencer, M. G. / Materials Research Society et al. | 1999
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Characteristic Temperature Estimation of GaN-Based LasersHonda, T. / Kawanishi, H. / Sakaguchi, T. / Koyama, F. / Materials Research Society et al. | 1999
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GaN NanotubesLee, S. M. / Lee, Y. H. / Hwang, Y. G. / Elsner, J. / Materials Research Society et al. | 1999
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Electrical Characterization of Sputter Deposition Induced Defects in n-GaNAuret, F. D. / Goodman, S. A. / Koschnick, F. K. / Spaeth, J.-M. / Materials Research Society et al. | 1999
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XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN SurfacesBeach, R. A. / Piquette, E. C. / McGill, T. C. / Materials Research Society et al. | 1999
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RBS Lattice Site Location and Damage Recovery Studies in GaNAlves, E. / DaSilva, M. F. / Soares, J. C. / Bartels, J. / Materials Research Society et al. | 1999