Evaluation of molybdenum silicide for use as a 193-nm phase-shifting absorber in photomask manufacturing [4186-47] (Englisch)
- Neue Suche nach: Hibbs, M. S.
- Neue Suche nach: Ushida, M.
- Neue Suche nach: Babich, K.
- Neue Suche nach: Mitsui, H.
- Neue Suche nach: Bourov, A.
- Neue Suche nach: SPIE
- Neue Suche nach: Hibbs, M. S.
- Neue Suche nach: Ushida, M.
- Neue Suche nach: Babich, K.
- Neue Suche nach: Mitsui, H.
- Neue Suche nach: Bourov, A.
- Neue Suche nach: Grenon, B. J.
- Neue Suche nach: Dao, G. T.
- Neue Suche nach: SPIE
In:
Photomask technology; 20th Annual BACUS symposium on photomask technology
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444-451
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2001
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Evaluation of molybdenum silicide for use as a 193-nm phase-shifting absorber in photomask manufacturing [4186-47]
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Beteiligte:Hibbs, M. S. ( Autor:in ) / Ushida, M. ( Autor:in ) / Babich, K. ( Autor:in ) / Mitsui, H. ( Autor:in ) / Bourov, A. ( Autor:in ) / Grenon, B. J. / Dao, G. T. / SPIE
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Kongress:Annual symposium; 20th, Photomask technology; 20th Annual BACUS symposium on photomask technology ; 2000 ; Monterey, CA
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Erschienen in:PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 4186 ; 444-451
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Verlag:
- Neue Suche nach: SPIE
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Erscheinungsdatum:01.01.2001
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Format / Umfang:8 pages
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Lithographic performance results for a new 50-kV electron-beam mask writerChakarian, Varoujan / Bylciw, Stephen R. / Sauer, Charles A. / Trost, David / Zywno, Marek / Teitzel, Robin / Raymond, Frederick / Abboud, Frank E. et al. | 2001
- 1
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Lithographic performance results for a new 50-kV electron-beam mask writer [4186-01]Chakarian, V. / Bylciw, S. R. / Sauer, C. A. / Trost, D. / Zywno, M. / Teitzel, R. / Raymond, F. / Abboud, F. E. / SPIE et al. | 2001
- 16
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New architecture for laser pattern generators for 130 nm and beyondLjungblad, Ulric B. / Sandstrom, Torbjoern / Buhre, Hans / Duerr, Peter / Lakner, Hubert K. et al. | 2001
- 16
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New architecture for laser pattern generators for 130 nm and beyond [4186-02]Ljungblad, U. B. / Sandstrom, T. / Buhre, H. / Durr, P. / Lakner, H. / SPIE et al. | 2001
- 22
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Performance of JBX-9000MV with negative-tone resist for 130-nm reticle [4186-03]Takahashi, N. / Tsuzuki, M. / Kotani, J. / Yoshida, J. / Kodaira, Y. / Oi, Y. / Yamada, Y. / Matsuzawa, Y. / SPIE et al. | 2001
- 22
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Performance of JBX-9000MV with negative-tone resist for 130-nm reticleTakahashi, Naoki / Tsuzuki, Masayoshi / Kotani, Jun / Yoshida, Jun / Kodaira, Yuji / Oi, Yuko / Yamada, Yoshiro / Matsuzawa, Yuichi et al. | 2001
- 34
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New concept photomask repeater with stitching exposure techniqueIrie, Nobuyuki / Muramatsu, Koji / Ishii, Yuuki / Magome, Nobutaka / Umatate, Toshikazu / Kyoh, Suigen / Tanaka, Shun-Ichiro / Inoue, Soichi / Higashikawa, Iwao / Mori, Ichiro et al. | 2001
- 34
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New concept photomask repeater with stitching exposure technique [4186-04]Irie, N. / Muramatsu, K. / Ishii, Y. / Magome, N. / Umatate, T. / Kyoh, S. / Tanaka, S. / Inoue, S. / Higashikawa, I. / Mori, I. et al. | 2001
- 46
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Improved throughput in 0.6-NA laser reticle writers [4186-05]Valentin, G. E. / Hamaker, H. C. / Daniel, J. P. / Garg, V. / Sprenkel, D. R. / SPIE et al. | 2001
- 46
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Improved throughput in 0.6-NA laser reticle writersValentin, Gregory E. / Hamaker, Henry Chris / Daniel, Jay P. / Garg, Vishal / Sprenkel, Daniel R. et al. | 2001
- 58
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Development of MoSi-based halftone phase-shift blank and mask fabrication for ArF lithography (Photomask Japan 2000 Best Presentation Award) [4186-99]Suda, H. / Mitsui, H. / Nozawa, O. / Ohtsuka, H. / Takeuchi, M. / Nishida, N. / Ohkubo, Y. / Ushida, M. / SPIE et al. | 2001
- 58
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Development of MoSi-based halftone phase-shift blank and mask fabrication for ArF lithography (Photomask Japan 2000 Best Presentation Award)Suda, Hideki / Mitsui, Hideaki / Nozawa, Osamu / Ohtsuka, Hitoshi / Takeuchi, Megumi / Nishida, Naoki / Okubo, Yasushi / Ushida, Masao et al. | 2001
- 73
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Process development for 257-nm photomask fabrication using environmentally stable chemically amplified photoresists [4186-06]Albelo, J. A. / Rathsack, B. M. / Pirogovsky, P. Y. / SPIE et al. | 2001
- 73
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Process development for 257-nm photomask fabrication using environmentally stable chemically amplified photoresistsAlbelo, Jeff A. / Rathsack, Benjamen M. / Pirogovsky, Peter Y. et al. | 2001
- 85
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Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads: III [4186-07]Constantine, C. / Westerman, R. J. / Plumhoff, J. / SPIE et al. | 2001
- 85
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Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads: IIIConstantine, Chris / Westerman, Russell J. / Plumhoff, Jason et al. | 2001
- 97
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Chrome dry etch process characterization using surface nanoprofilingRuhl, Guenther G. / Dietrich, Ralf / Ludwig, Ralf / Falk, Norbert / Morrison, Troy B. / Stoehr, Brigitte C. et al. | 2001
- 97
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Chrome dry etch process characterization using surface nanoprofiling [4186-08]Ruhl, G. G. / Dietrich, R. / Ludwig, R. / Falk, N. / Morrison, T. B. / Stoehr, B. C. / SPIE et al. | 2001
- 108
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Experimental study on the possibility of chemically amplified resists for mask production for device generations < 180 nmKim, Chang-Hwan / Jeon, Chan-Uk / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min et al. | 2001
- 108
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Experimental study on the possibility of chemically amplified resists for mask production for device generations < 180 nm [4186-09]Kim, C.-H. / Jeon, C.-U. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / SPIE et al. | 2001
- 114
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Mask manufacturing rule check: how to save money in your mask shop [4186-11]Keck, M. C. / Ziegler, W. / Liebe, R. / Franke, T. / Ballhorn, G. / Kofferlein, M. / Thiele, J. / SPIE et al. | 2001
- 114
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Mask manufacturing rule check: how to save money in your mask shopKeck, Martin C. / Ziegler, Wolfram / Liebe, Roman / Franke, Torsten / Ballhorn, Gerd / Koefferlein, Matthias / Thiele, Joerg et al. | 2001
- 119
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Using manufacturing rule check to prescreen reticle inspection databasesHoward, Charles H. / DePesa, Paul / Linder, Curt J. et al. | 2001
- 119
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Using manufacturing rule check to prescreen reticle inspection databases [4186-12]Howard, C. H. / DePesa, P. / Linder, C. J. / SPIE et al. | 2001
- 129
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Methods used to streamline data preparation for memory products [4186-13]DePesa, P. / Leitermann, W. / SPIE et al. | 2001
- 129
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Methods used to streamline data preparation for memory productsDePesa, Paul / Leitermann, Wolfgang et al. | 2001
- 136
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ASIC data preparation management for OPCDunham, Timothy G. / Leipold, William C. et al. | 2001
- 136
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ASIC data preparation management for OPC [4186-14]Dunham, T. G. / Leipold, W. C. / SPIE et al. | 2001
- 140
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Efficient automated tapeout system [4186-15]Krieger, W. A. / Nasamran, C. / SPIE et al. | 2001
- 140
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Efficient automated tapeout systemKrieger, William A. / Nasamran, Chana et al. | 2001
- 148
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FIB-based local deposition of dielectrics for phase-shift mask modification [4186-17]Wanzenboeck, H. D. / Verbeek, M. / Maurer, W. / Bertagnolli, E. / SPIE et al. | 2001
- 148
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FIB-based local deposition of dielectrics for phase-shift mask modificationWanzenboeck, Heinz D. / Verbeek, Martin / Maurer, Wilhelm / Bertagnolli, Emmerich et al. | 2001
- 158
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Advanced FIB mask repair technology for ArF lithography: II [4186-18]Kubo, S. / Hiruta, K. / Morimoto, H. / Yasaka, A. / Hagiwara, R. / Adachi, T. / Morikawa, Y. / Iwase, K. / Hayashi, N. / SPIE et al. | 2001
- 158
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Advanced FIB mask repair technology for ArF lithography: IIKubo, Shinji / Hiruta, Koji / Morimoto, Hiroaki / Yasaka, Anto / Hagiwara, Ryoji / Adachi, Tatsuya / Morikawa, Yasutaka / Iwase, Kazuya / Hayashi, Naoya et al. | 2001
- 165
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Multibeam high-resolution UV wavelength reticle inspection (Best Paper Award) [4186-19]Hung, C. C. / Yoo, C. S. / Lin, C.-H. / Volk, W. W. / Wiley, J. N. / Khanna, S. / Biellak, S. / Wang, D. / SPIE et al. | 2001
- 165
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Multibeam high-resolution UV wavelength reticle inspectionHung, Chih-Chien / Yoo, Chue-San / Lin, Chia-Hui / Volk, William W. / Wiley, James N. / Khanna, Steve / Biellak, Steve / Wang, D. et al. | 2001
- 173
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In-process defect inspection and characterization study for dry etching chrome-on-quartz binary masks [4186-20]Cai, W. / Kamberian, H. / Mattis, D. G. / Morris, K. / Tu, V. / SPIE et al. | 2001
- 173
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In-process defect inspection and characterization study for dry etching chrome-on-quartz binary masksCai, Weidong / Kamberian, Henry H. / Mattis, Douglas G. / Morris, Kraig / Tu, Van et al. | 2001
- 183
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Correlation of reticle defects detectability and repairs to ArF wafer printability for 0.13-mum design rule with binary OPC/SB mask [4186-21]Phan, K. A. / Spence, C. A. / Riddick, J. / Chen, J. X. / Lamantia, M. / Villa, H. A. / SPIE et al. | 2001
- 183
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Correlation of reticle defects detectability and repairs to ArF wafer printability for 0.13-μm design rule with binary OPC/SB maskPhan, Khoi A. / Spence, Chris A. / Riddick, John / Chen, Jerry X. / Lamantia, Matt J. / Villa, Hugo A. et al. | 2001
- 198
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Practical defect-sizing issues for UV inspection of 248-nm embedded attenuated PSM contact layerReynolds, James A. et al. | 2001
- 198
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Practical defect-sizing issues for UV inspection of 248-nm embedded attenuated PSM contact layer [4186-22]Reynolds, J. A. / SPIE et al. | 2001
- 207
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Pellicle-induced distortions in advanced optical reticles [4186-23]Semke, W. H. / Siewert, L. K. / Mikkelson, A. R. / Risius, E. A. / Tang, N. / Engelstad, R. L. / Lovell, E. G. / Zheng, J.-F. / Dao, G. T. / SPIE et al. | 2001
- 207
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Pellicle-induced distortions in advanced optical reticlesSemke, William H. / Siewert, Lowell K. / Mikkelson, Andrew R. / Risius, Eric A. / Tang, Ning / Engelstad, Roxann L. / Lovell, Edward G. / Zheng, Jun-Fei / Dao, Giang T. et al. | 2001
- 217
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Reticle error correction for lithography tool qualification benefits and limitationsKiers, Ton / Mulder, Melchior / van Schoot, Jan B. / Waelpoel, Jacques A. / Uitz, Robert et al. | 2001
- 217
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Reticle error correction for lithography tool qualification benefits and limitations [4186-24]Kiers, T. / Mulder, M. / van Schoot, J. B. / Waelpoel, J. A. / Uitz, R. / SPIE et al. | 2001
- 227
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Analysis of photomask distortion caused by blank materials and open ratios [4186-25]Moon, S.-Y. / Ki, W.-T. / Yang, S.-H. / Jeong, T.-M. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / SPIE et al. | 2001
- 227
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Analysis of photomask distortion caused by blank materials and open ratiosMoon, Seong-Yong / Ki, Won-Tai / Yang, Seung-Hune / Jeong, Tae Moon / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min et al. | 2001
- 233
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Innovations in lithography metrology for characterization of phase-shift mask materialsHarrison, Dale A. / Lam, John C. / Forouhi, A. Rahim et al. | 2001
- 233
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Innovations in lithography metrology for characterization of phase-shift mask materials [4186-26]Harrison, D. A. / Lam, J. C. / Forouhi, A. / SPIE et al. | 2001
- 241
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UV inspection of EUV and SCALPEL reticles [4186-27]Pettibone, D. W. / Bareket, N. / Liang, T. / Stivers, A. R. / Hector, S. D. / Mangat, P. J. S. / Resnick, D. J. / Lercel, M. J. / Lawliss, M. / Magg, C. et al. | 2001
- 241
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UV inspection of EUV and SCALPEL reticlesPettibone, Donald W. / Bareket, Noah / Liang, Ted / Stivers, Alan R. / Hector, Scott D. / Mangat, Pawitter J. S. / Resnick, Douglas J. / Lercel, Michael J. / Lawliss, Mark / Magg, Christopher et al. | 2001
- 250
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Ion projection lithography: new insights and results of this NGL technologyStruck, Thomas / Ehrmann, Albrecht / Kaesmaier, Rainer / Loeschner, Hans et al. | 2001
- 250
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Ion projection lithography: new insights and results of this NGL technology [4186-28]Struck, T. / Ehrmann, A. / Kaesmaier, R. / Loschner, H. / SPIE et al. | 2001
- 259
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157-nm lithography for 100-nm generation and beyond: progress and statusDao, Giang T. / Borodovsky, Yan A. et al. | 2001
- 259
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157-nm lithography for 100-nm generation and beyond: progress and status [4186-29]Dao, G. T. / Borodovsky, Y. A. / SPIE et al. | 2001
- 268
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Materials for an attenuated phase-shifting mask in 157-nm lithography [4186-30]Matsuo, T. / Onodera, T. / Itani, T. / Morimoto, H. / Haraguchi, T. / Kanayama, K. / Otaki, M. / SPIE et al. | 2001
- 268
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Materials for an attenuated phase-shifting mask in 157-nm lithographyMatsuo, Takahiro / Onodera, Toshio / Itani, Toshiro / Morimoto, Hiroaki / Haraguchi, Takashi / Kanayama, Koichiro / Matsuo, Tadashi / Otaki, Masao et al. | 2001
- 275
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Printing 0.13-mum contact holes using 193-nm attenuated phase-shifting masks [4186-31]Wang, C.-M. A. / Lin, S.-J. / Lin, C.-H. / Ku, Y.-C. / Yen, A. / SPIE et al. | 2001
- 275
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Printing 0.13-μm contact holes using 193-nm attenuated phase-shifting masksWang, Chun-Ming A. / Lin, Shy-Jay / Lin, Chia-Hui / Ku, Yao Ching / Yen, Anthony et al. | 2001
- 287
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KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning processKim, Juhwan / Kim, Sang-Chul / Kim, Hee-Chun / Lee, Sang-Lee / Choi, Yong-Kyoo / Ham, Young-Mog / Han, Oscar et al. | 2001
- 287
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KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process [4186-32]Kim, J. / Kim, S.-C. / Kim, H.-C. / Lee, S.-I. / Choi, Y.-K. / Ham, Y.-M. / Han, O. / SPIE et al. | 2001
- 297
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Realization of mass production for 130-nm node and future applicatiton for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithographyIi, Toshihiro / Saga, Tadashi / Hattori, Yusuke / Ohshima, Takashi / Otaki, Masao / Iwakata, Masahide / Haraguchi, Takashi / Kanayama, Koichiro / Yamazaki, Tsukasa / Fukuhara, Nobuhiko et al. | 2001
- 297
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Realization of mass production for 130-nm node and future application for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithography [4186-33]Ii, T. / Saga, T. / Hattori, Y. / Ohshima, T. / Otaki, M. / Iwakata, M. / Haraguchi, T. / Kanayama, K. / Yamazaki, T. / Fukuhara, N. et al. | 2001
- 309
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Effect of mask reduction ratio in alternating phase-shift masksShin, In-Gyun / Lee, Sung-Ho / Kim, Yong-Hoon / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min / Lim, Tong-Kun et al. | 2001
- 309
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Effect of mask reduction ratio in alternating phase-shift masks [4186-34]Shin, I.-G. / Lee, S.-W. / Kim, Y.-H. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / Lim, T.-K. / SPIE et al. | 2001
- 316
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Plasma etching of quartz for the fabrication of alternating aperture phase-shift photomasks: etch rate uniformity study utilizing a next-generation ICP source [4186-35]Westerman, R. J. / Constantine, C. / Plumhoff, J. / Strawn, C. / SPIE et al. | 2001
- 316
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Plasma etching of quartz for the fabrication of alternating aperture phase-shift photomasks: etch rate uniformity study utilizing a next-generation ICP sourceWesterman, Russell J. / Constantine, Chris / Plumhoff, Jason / Strawn, C. et al. | 2001
- 325
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Proximity effects in alternating aperture phase-shifting masks [4186-36]Pierrat, C. / SPIE et al. | 2001
- 325
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Proximity effects in alternating aperture phase-shifting masksPierrat, Christophe et al. | 2001
- 336
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Fabricating 0.10-μm line patterns using attenuated phase-shift masksIwasaki, Haruo et al. | 2001
- 336
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Fabricating 0.10-mum line patterns using attenuated phase-shift masks [4186-37]Iwasaki, H. / SPIE et al. | 2001
- 346
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Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithography [4186-38]Koo, S.-S. / Kim, H.-B. / Yune, H.-S. / Hong, J.-S. / Paek, S.-W. / Eom, T.-S. / Ahn, C.-N. / Ham, Y.-M. / Baik, K.-H. / Lee, K.-Y. et al. | 2001
- 346
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Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithographyKoo, Sang-Sool / Kim, Hee-Bom / Yune, Hyoung-Soon / Hong, Jee-Suk / Paek, Seung-Weon / Eom, Tae-Seung / Ahn, Chang-Nam / Ham, Young-Mog / Baik, Ki-Ho / Lee, Kyu-Yong et al. | 2001
- 359
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Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithographyHam, Young-Mog / Kim, Seo-Min / Kim, Sang-Jin / Bae, Sang-Man / Kim, Young-Deuk / Baik, Ki-Ho et al. | 2001
- 359
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Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography [4186-39]Ham, Y.-M. / Kim, S.-M. / Kim, S.-J. / Bae, S.-M. / Kim, Y.-D. / Baik, K.-H. / SPIE et al. | 2001
- 372
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Balancing of alternating phase-shifting masks for practical application: modeling and experimental verificationGriesinger, Uwe A. / Mader, Leonhard / Semmler, Armin / Dettmann, Wolfgang / Noelscher, Christoph / Pforr, Rainer et al. | 2001
- 372
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Balancing of alternating phase-shifting masks for practical application: modeling and experimental verification [4186-40]Griesinger, U. A. / Mader, L. / Semmler, A. / Dettmann, W. / Noelscher, C. / Pforr, R. / SPIE et al. | 2001
- 384
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High-performance devices in the new century: optical lithography and mask strategy for 0.13-μm SoC (Photomask Japan 2000 panel discussion review)Kawahira, Hiroichi / Nagano, Vic et al. | 2001
- 384
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High-performance devices in the new century: optical lithography and mask strategy for 0.13-mum SoC (Photomask Japan 2000 panel discussion review) [4186-41]Kawahira, H. / Nagano, V. / SPIE et al. | 2001
- 395
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Phase phirst! An improved strong-PSM paradigmLevenson, David / Petersen, John S. / Gerold, David J. / Mack, Chris A. et al. | 2001
- 395
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Phase phirst! An improved strong-PSM paradigm [4186-42]Levenson, M. D. / Petersen, J. S. / Gerold, D. G. / Mack, C. A. / SPIE et al. | 2001
- 405
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Modeling defect-feature interactions in the presence of aberrationsNeureuther, Andrew R. / Hotta, Shoji / Adam, Konstantinos et al. | 2001
- 405
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Modeling defect-feature interactions in the presence of aberrations [4186-43]Neureuther, A. R. / Hotta, S. / Adam, K. / SPIE et al. | 2001
- 415
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Requirements for reticle and reticle material for 157-nm lithography: requirements for hard pellicle [4186-44]Miyazaki, J. / Itani, T. / Morimoto, H. / SPIE et al. | 2001
- 415
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Requirements for reticle and reticle material for 157-nm lithography: requirements for hard pellicleMiyazaki, Junji / Itani, Toshiro / Morimoto, Hiroaki et al. | 2001
- 423
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Impact of alternating phase-shift mask quality on 100-nm gate lithographyYamamoto, Tomohiko / Ishiwata, Naoyuki / Asai, Satoru et al. | 2001
- 423
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Impact of alternating phase-shift mask quality on 100-nm gate lithography [4186-45]Yamamoto, T. / Ishiwata, N. / Asai, S. / SPIE et al. | 2001
- 433
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Technological challenges in implementation of alternating phase-shift mask [4186-46]Tsai, W. / Qian, Q. / Buckmann, K. M. / Cheng, W.-H. / He, L. / Irvine, B. / Kamna, M. / Korobko, Y. / Kovalchick, M. / Labovitz, S. M. et al. | 2001
- 433
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Technological challenges in implementation of alternating phase-shift maskTsai, Wilman / Qian, Qi-De / Buckmann, Ken M. / Cheng, Wen-Hao / He, Long / Irvine, Brian / Kamna, Marilyn / Korobko, Yulia O. / Kovalchick, Michael / Labovitz, Steven M. et al. | 2001
- 444
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Evaluation of molybdenum silicide for use as a 193-nm phase-shifting absorber in photomask manufacturingHibbs, Michael S. / Ushida, Masao / Babich, Katherina / Mitsui, Hideaki / Bourov, Anatoly et al. | 2001
- 444
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Evaluation of molybdenum silicide for use as a 193-nm phase-shifting absorber in photomask manufacturing [4186-47]Hibbs, M. S. / Ushida, M. / Babich, K. / Mitsui, H. / Bourov, A. / SPIE et al. | 2001
- 452
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Emergence of assist feature OPC era in sub-130-nm DRAM devices [4186-48]Kim, B. / Kim, I. / Yeo, G. / Lee, J. / Choi, J. / Cho, H. / Moon, J. / SPIE et al. | 2001
- 452
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Emergence of assist feature OPC era in sub-130-nm DRAM devicesKim, Byeongsoo / Kim, Insung / Yeo, Gisung / Lee, Junghyun / Choi, Ji-Hyeon / Cho, Hanku / Moon, Joo-Tae et al. | 2001
- 460
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Eddy current evaluation for a high-resolution EB system [4186-49]Shimomura, N. / Ogasawara, M. / Hattori, K. / Takamatsu, J. / Sunaoshi, H. / Yoshitake, S. / Fukudome, Y. / Akeno, K. / SPIE et al. | 2001
- 460
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Eddy current evaluation for a high-resolution EB systemShimomura, Naoharu / Ogasawara, Munehiro / Hattori, Kiyoshi / Takamatsu, Jun / Sunaoshi, Hitoshi / Yoshitake, Shusuke / Fukudome, Yuuji / Akeno, Kiminobu et al. | 2001
- 468
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Effect of beam blur in mask fabrication [4186-50]Yang, S.-H. / Ki, W.-T. / Moon, S.-Y. / Jeong, T.-M. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / SPIE et al. | 2001
- 468
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Effect of beam blur in mask fabricationYang, Seung-Hune / Ki, Won-Tai / Moon, Seong-Yong / Jeong, Tae Moon / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min et al. | 2001
- 474
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Integration of the Micronic Omega6500 into the mask manufacturing environment [4186-52]Buck, P. D. / Bjuggren, M. / Bunning, H. / Garg, V. / Larsson, J. / Vikholm, T. / SPIE et al. | 2001
- 474
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Integration of the Micronic Omega6500 into the mask manufacturing environmentBuck, Peter D. / Bjuggren, Mans / Buenning, Hartmut / Garg, Vishal / Larsson, Johan / Vikholm, Tomas et al. | 2001
- 482
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Localized resist heating due to electron-beam patterning during photomask fabrication [4186-53]Wei, A. C. / Beckman, W. A. / Engelstad, R. L. / Mitchell, J. W. / Phung, T. N. / Zheng, J.-F. / SPIE et al. | 2001
- 482
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Localized resist heating due to electron-beam patterning during photomask fabricationWei, Alexander C. / Beckman, William A. / Engelstad, Roxann L. / Mitchell, John W. / Phung, Thanh N. / Zheng, Jun-Fei et al. | 2001
- 494
-
Management of pattern generation system based on i-line stepperKyoh, Suigen / Tanaka, Satoshi / Inoue, Soichi / Higashikawa, Iwao / Mori, Ichiro / Okumura, Katsuya / Irie, Nobuyuki / Muramatsu, Koji / Ishii, Yuuki / Magome, Nobutaka et al. | 2001
- 494
-
Management of pattern generation system based on i-line stepper [4186-54]Kyoh, S. / Tanaka, S. / Inoue, S. / Higashikawa, I. / Mori, I. / Okumura, K. / Irie, N. / Muramatsu, K. / Ishii, Y. / Magome, N. et al. | 2001
- 503
-
Comprehensive simulation of e-beam lithography processes using PROLITH/3D and TEMPTATION software toolsKuzmin, Igor Y. / Mack, Chris A. et al. | 2001
- 503
-
Comprehensive simulation of e-beam lithography processes using PROLITH/3D and TEMPTATION software tools [4186-55]Kuzmin, I. Y. / Mack, C. A. / SPIE et al. | 2001
- 508
-
Improved process control of photomask fabrication in e-beam lithography [4186-56]Cha, B.-C. / Park, J.-H. / Choi, Y.-H. / Kim, J.-M. / Han, W.-S. / Yoon, H.-S. / Sohn, J.-M. / SPIE et al. | 2001
- 508
-
Improved process control of photomask fabrication in e-beam lithographyCha, Byung-Cheol / Park, Jin-Hong / Choi, Yo-Han / Kim, Jin-Min / Han, Woo-Sung / Yoon, Hee-Sun / Sohn, Jung-Min et al. | 2001
- 513
-
Investigations of CD variation in Cr dry etching processHanda, Hitoshi / Yamauchi, Satoshi / Hosono, Kouji / Shirai, Hisatsugu et al. | 2001
- 513
-
Investigations of CD variation in Cr dry etching process [4186-57]Handa, H. / Yamauchi, S. / Hosono, K. / Shirai, H. / SPIE et al. | 2001
- 522
-
Evaluation of photomask blank layer parameters with an x-ray reflection method and photomask property distributionHirano, Teruyoshi / Hayashi, Atsushi / Hino, Yoshihiro / Wada, Hiroshi / Otaki, Masao / Matsuo, Ryuji et al. | 2001
- 522
-
Evaluation of photomask blanks layer parameters with an x-ray reflection method and photomask property distribution [4186-58]Hirano, T. / Hayashi, A. / Hino, Y. / Wada, H. / Otaki, M. / Matsuo, R. / SPIE et al. | 2001
- 532
-
Dry etching technology of Cr and MoSi layers using high-density plasma sourceKwon, Hyuk-Joo / Oh, Kwang-Sik / Chang, Byung-Soo / Choi, Boo-Yeon / Park, Kyung-Ho / Jeong, Soo-Hong et al. | 2001
- 532
-
Dry etching technology of Cr and MoSi layers using high-density plasma source [4186-59]Kwon, H.-J. / Oh, K.-S. / Chang, B.-S. / Choi, B.-Y. / Park, K.-H. / Jeong, S.-H. / SPIE et al. | 2001
- 540
-
Develop process optimization for CD uniformity improvementShin, Jae-Cheon / Won, Joon-Il / Jung, Ho-Yong / Kim, Mun-Sik / Choi, Yong-Kyoo / Han, Oscar et al. | 2001
- 540
-
Develop process optimization for CD uniformity improvement [4186-60]Shin, J.-C. / Won, J.-I. / Jung, H.-Y. / Kim, M.-S. / Choi, Y.-K. / Han, O. / SPIE et al. | 2001
- 549
-
Evaluation of loading effect of NLD dry etching: II [4186-61]Fujisawa, T. / Iwamatsu, T. / Hiruta, K. / Morimoto, H. / Harashima, N. / Sasaki, T. / Hara, M. / Yamashiro, K. / Ohkubo, Y. / Takehana, Y. et al. | 2001
- 549
-
Evaluation of loading effect of NLD dry etching: IIFujisawa, Tatsuya / Iwamatsu, Takayuki / Hiruta, Koji / Morimoto, Hiroaki / Harashima, Noriyuki / Sasaki, Takaei / Hara, Mutsumi / Yamashiro, Kazuhide / Okubo, Yasushi / Takehana, Yoichi et al. | 2001
- 553
-
Laser resist screening for iP3500/3600 replacement for advanced reticle fabricationOta, Fumiko / Kobayashi, Hideo / Higuchi, Takao / Asakawa, Keishi et al. | 2001
- 553
-
Laser resist screening for iP3500/3600 replacement for advanced reticle fabrication [4186-62]Ohta, F. / Kobayashi, H. / Higuchi, T. / Asakawa, K. / SPIE et al. | 2001
- 561
-
CARs blanks feasibility study results for advanced EB reticle fabrication [4186-63]Hashimoto, M. / Kobayashi, H. / Yokoya, Y. / SPIE et al. | 2001
- 561
-
CARs blanks feasibility study results for advanced EB reticle fabricationHashimoto, Masahiro / Kobayashi, Hideo / Yokoya, Yasunori et al. | 2001
- 578
-
Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabricationRathsack, Benjamen M. / Tabery, Cyrus E. / Albelo, Jeff A. / Buck, Peter D. / Willson, C. Grant et al. | 2001
- 578
-
Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabrication [4186-64]Rathsack, B. M. / Tabery, C. E. / Albelo, J. A. / Buck, P. D. / Willson, C. G. / SPIE et al. | 2001
- 589
-
Effective data compaction algorithm for vector scan EB writing system [4186-65]Ueki, S. / Ashida, I. / Kawahira, H. / SPIE et al. | 2001
- 589
-
Effective data compaction algorithm for vector scan EB writing systemUeki, Shinichi / Ashida, Isao / Kawahira, Hiroichi et al. | 2001
- 601
-
Pushing SRAM densities beyond 0.13-μm technology in the year 2000Bula, Orest / Mih, Rebecca D. / Jasinski, Eric / Hoyniak, Dennis / Lu, Andrew / Harrington, Jay / McGuire, Anne E. et al. | 2001
- 601
-
Pushing SRAM densities beyond 0.13-mum technology in the year 2000 [4186-66]Bula, O. / Mih, R. D. / Jasinski, E. / Hoyniak, D. / Lu, A. / Harrington, J. / McGuire, A. E. / SPIE et al. | 2001
- 612
-
Improvement of the efficiency of OPC data handlingToyama, Nobuhito / Ikemoto, Takayuki / Ishida, Kouji / Miyashita, Hiroyuki et al. | 2001
- 612
-
Improvement of the efficiency of OPC data handling [4186-67]Toyama, N. / Ikemoto, T. / Ishida, K. / Miyashita, H. / SPIE et al. | 2001
- 620
-
OPC reticle inspection techniquesDong, Aihua / Reese, Bryan W. et al. | 2001
- 620
-
OPC reticle inspection techniques [4186-68]Dong, A. / Reese, B. W. / SPIE et al. | 2001
- 630
-
Evaluation of a multiple-beam defect inspection platform using an integrated reference maskChen, Jerry X. / Kalk, Franklin D. / Vacca, Anthony / Pomeroy, Scott / Carroll, Jordan et al. | 2001
- 630
-
Evaluation of a multiple-beam defect inspection platform using an integrated reference mask [4186-69]Chen, J. X. / Kalk, F. D. / Vacca, A. / Pomeroy, S. / Carroll, J. / SPIE et al. | 2001
- 638
-
Soft defect printability: correlation to optical flux-area measurementsTaylor, Darren / Fiekowsky, Peter et al. | 2001
- 638
-
Soft defect printability: correlation to optical flux-area measurements [4186-71]Taylor, D. / Fiekowsky, P. / SPIE et al. | 2001
- 647
-
New approach to improve CD uniformity based on mask quality [4186-100]Liebe, R. / Jaehnert, C. / Gottlib, G. / Eran, Y. / Hemar, S. / Sade, A. / Rosenbusch, A. / SPIE et al. | 2001
- 647
-
New approach to improve CD uniformity based on mask qualityLiebe, Roman / Jaehnert, Carmen / Gottlib, Gidon / Eran, Yair / Hemar, Shirley / Sade, Amikam / Rosenbusch, Anja et al. | 2001
- 654
-
Investigating inspectability and printability of contamination deposited during SEM analysisKasprowicz, Bryan S. / Ananth, Mohan / Wang, Chih-Yu et al. | 2001
- 654
-
Investigating inspectability and printability of contamination deposited during SEM analysis [4186-101]Kasprowicz, B. S. / Ananth, M. / Wang, C.-Y. / SPIE et al. | 2001
- 663
-
High-accuracy laser mask repair system LM700AYoshino, Yoichi / Morishige, Yukio / Watanabe, Shuichi / Kyusho, Yukio / Ueda, Atsushi / Haneda, Tutomu / Ohmiya, Makoto et al. | 2001
- 663
-
High-accuracy laser mask repair system LM700A [4186-109]Yoshino, Y. / Morishige, Y. / Watanabe, S. / Kyusho, Y. / Ueda, A. / Haneda, T. / Oomiya, M. / SPIE et al. | 2001
- 670
-
Subtractive defect repair via nanomachining [4186-111]Laurance, M. R. / SPIE et al. | 2001
- 670
-
Subtractive defect repair via nanomachiningLaurance, Mark R. et al. | 2001
- 674
-
Neolithography Consortium: a progress report [4186-73]Potzick, J. E. / SPIE et al. | 2001
- 674
-
Neolithography Consortium: a progress reportPotzick, James E. et al. | 2001
- 681
-
Automated atomic force metrology applications for alternating aperture phase-shift masks [4186-110]Miller, K. / Todd, B. / SPIE et al. | 2001
- 681
-
Automated atomic force metrology applications for alternating aperture phase-shift masksMiller, Kirk / Todd, Bradley et al. | 2001
- 688
-
Characterization of Be-based multilayer masks using x-ray reflectivity and Auger electron spectroscopyWasson, James R. / Mangat, Pawitter J. S. / Slaughter, Jon M. / Hector, Scott D. / Bajt, Sasa / Kearney, Patrick A. et al. | 2001
- 688
-
Characterization of Be-based multilayer masks using x-ray reflectivity and Auger electron spectroscopy [4186-75]Wasson, J. R. / Mangat, P. J. S. / Slaughter, J. M. / Hector, S. D. / Bajt, S. / Kearney, P. A. / SPIE et al. | 2001
- 697
-
SCALPEL mask parametric study [4186-76]Dicks, G. A. / Engelstad, R. L. / Lovell, E. G. / Liddle, J. A. / SPIE et al. | 2001
- 697
-
SCALPEL mask parametric studyDicks, Gerald A. / Engelstad, Roxann L. / Lovell, Edward G. / Liddle, James A. et al. | 2001
- 707
-
Evaluation of an advanced chemically amplified resist for next-generation lithography mask fabrication [4186-77]Magg, C. / Lercel, M. J. / Lawliss, M. / Kwong, R. W. / Huang, W.-S. / Angelopoulos, M. / SPIE et al. | 2001
- 707
-
Evaluation of an advanced chemically amplified resist for next-generation lithography mask fabricationMagg, Christopher / Lercel, Michael J. / Lawliss, Mark / Kwong, Ranee W. / Huang, Wu-Song / Angelopoulos, Marie et al. | 2001
- 717
-
Fabrication process and transmission characteristics of SCALPEL mask blanks with thin SiNxmembranesHan, Sang-In / Mangat, Pawitter J. S. / Dauksher, William J. / Chor, Michael / Liddle, James A. / Novembre, Anthony E. et al. | 2001
- 717
-
Fabrication process and transmission characteristics of SCALPEL mask blanks with thin SiN~x membranes [4186-78]Han, S.-I. / Mangat, P. J. S. / Dauksher, W. J. / Chor, M. / Liddle, J. A. / Novembre, A. E. / SPIE et al. | 2001
- 724
-
Predicting thermomechanical distortions of optical reticles for 157-nm technologyAbdo, Amr Y. / Engelstad, Roxann L. / Beckman, William A. / Mitchell, John W. / Lovell, Edward G. et al. | 2001
- 724
-
Predicting thermomechanical distortions of optical reticles for 157-nm technology [4186-79]Abdo, A. Y. / Engelstad, R. L. / Beckman, W. A. / Mitchell, J. W. / Lovell, E. G. / SPIE et al. | 2001
- 733
-
Predictive model of the cost of extreme-ultraviolet lithography masksHector, Scott D. / Kearney, Patrick A. / Montcalm, Claude / Folta, James A. / Walton, Christopher C. / Tong, William M. / Taylor, John S. / Yan, Pei-yang / Gwyn, Charles W. et al. | 2001
- 733
-
Predictive model of the cost of extreme-ultraviolet lithography masks [4186-80]Hector, S. D. / Kearney, P. A. / Montcalm, C. / Folta, J. A. / Walton, C. C. / Tong, W. M. / Taylor, J. S. / Yan, P.-Y. / Gwyn, C. / SPIE et al. | 2001
- 749
-
Dry etching of Ta absorber for EUVL masks [4186-81]Hoshino, E. / Ogawa, T. / Hirano, N. / Hoko, H. / Takahashi, M. / Yamanashi, H. / Chiba, A. / Ito, M. / Okazaki, S. / SPIE et al. | 2001
- 749
-
Dry etching of Ta absorber for EUVL masksHoshino, Eiichi / Ogawa, Taro / Hirano, Naoya / Hoko, Hiromasa / Takahashi, Masashi / Yamanashi, Hiromasa / Chiba, Akira / Ito, Masaaki / Okazaki, Shinji et al. | 2001
- 756
-
157-nm photomask handling and infrastructure: requirements and feasibilityCullins, Jerry / Muzio, Edward G. et al. | 2001
- 756
-
157-nm photomask handling and infrastructure: requirements and feasibility [4186-82]Cullins, J. / Muzio, E. G. / SPIE et al. | 2001
- 762
-
Is it time to change mask magnification? [4186-83]Shelden, G. V. / SPIE et al. | 2001
- 762
-
Is it time to change mask magnification?Shelden, Gilbert V. et al. | 2001
- 767
-
Impact of surface contamination on transmittance of modified fused silica for 157-nm lithography applicationZheng, Jun-Fei / Kuse, Ronald / Ramamoorthy, Arun / Dao, Giang T. / Lo, Fu-Chang et al. | 2001
- 767
-
Impact of surface contamination on transmittance of modified fused silica for 157-nm lithography application [4186-84]Zheng, J.-F. / Kuse, R. / Ramamoorthy, A. / Dao, G. T. / Lo, F.-C. / SPIE et al. | 2001
- 774
-
Cr absorber mask for extreme-ultraviolet lithographyZhang, Guojing / Yan, Pei-yang / Liang, Ted et al. | 2001
- 774
-
Cr absorber mask for extreme-ultraviolet lithography [4186-102]Zhang, G. / Yan, P.-Y. / Liang, T. / SPIE et al. | 2001
- 781
-
Defect printability modeling of smoothed substrate defects for EUV lithography [4186-103]Ray-Chaudhuri, A. K. / Fisher, A. C. / Gullikson, E. M. / SPIE et al. | 2001
- 781
-
Defect printability modeling of smoothed substrate defects for EUV lithographyRay-Chaudhuri, Avijit K. / Fisher, Aaron / Gullikson, Eric M. et al. | 2001
- 787
-
Double-step process for manufacturing reticle to reduce gate CD variationKozuma, Makoto / Komatsu, Masaya / Arakawa, Rieko / Kubo, Seiji / Takahashi, Tatsuya / Jensen, John / Bang, Hyun-Suk / Lee, Il-Ho / Shin, Cheol / Kim, Hong-Seok et al. | 2001
- 787
-
Double-step process for manufacturing reticle to reduce gate CD variation [4186-85]Kozuma, M. / Komatsu, M. / Arakawa, R. / Kubo, S. / Takahashi, T. / Jensen, J. / Bang, H. S. / Lee, I. H. / Shin, C. / Kim, H.-S. et al. | 2001
- 793
-
Comparison study between stepper (5x) and scanner (4x) for gate CD control using total process-proximity-based correctionNam, Byung-Ho / Kim, Dong-Seok / Cho, Byung-Jin / Seok, Nam-Ki / Jeong, Jae K. / Kim, Sang-Pye / Kang, Sang-Woo / Hwang, Young J. / Song, Young Jin et al. | 2001
- 793
-
Comparison study between stepper (5x) and scanner (4x) for gate CD control using total process-proximity-based correction [4186-86]Nam, B. H. / Kim, D. S. / Cho, B. H. / Seok, N. K. / Jeong, J. K. / Kim, S. P. / Kang, S. W. / Hwang, Y. J. / Song, Y. J. / SPIE et al. | 2001
- 801
-
Development of simplified process for KrF excimer halftone mask with chrome-shielding method: II [4186-87]Kobayashi, S. / Watanabe, K. / Ohmori, K. / SPIE et al. | 2001
- 801
-
Development of simplified process for KrF excimer halftone mask with chrome-shielding method: IIKobayashi, Shinji / Watanabe, Kunio / Ohmori, Kiyochige et al. | 2001
- 810
-
Ion-beam sputter-deposited SiN/TiN attenuating phase-shift photoblanks [4186-88]Dieu, L. / Carcia, P. F. / Mitsui, H. / Ueno, K. / SPIE et al. | 2001
- 810
-
Ion-beam sputter-deposited SiN/TiN attenuating phase-shift photoblanksDieu, Laurent / Carcia, Peter F. / Mitsui, Hideaki / Ueno, Kunihiko et al. | 2001
- 818
-
Tritone inspection for embedded phase-shift mask [4186-89]Cheng, W.-H. / Farnsworth, J. N. / Tenjil, E. / SPIE et al. | 2001
- 818
-
Tritone inspection for embedded phase-shift maskCheng, Wen-Hao / Farnsworth, Jeff N. / Tejnil, Edita et al. | 2001
- 827
-
Effects of shifter edge topography on through focus performance [4186-90]Hotta, S. / Pistor, T. V. / Adam, K. / Neureuther, A. R. / SPIE et al. | 2001
- 827
-
Effects of shifter edge topography on through focus performanceHotta, Shoji / Pistor, Thomas V. / Adam, Konstantinos / Neureuther, Andrew R. et al. | 2001
- 838
-
Development of photomask fabrication for 100-nm design ruleInoue, Takashi / Horibe, Takuro / Maeda, Akihiro / Tanaka, Yoshiyuki et al. | 2001
- 838
-
Development of photomask fabrication for 100-nm design rule [4186-92]Inoue, T. / Horibe, T. / Maeda, A. / Tanaka, Y. / SPIE et al. | 2001
- 846
-
Development of a MoSi-based bilayer HT-PSM blank for ArF lithographyKanai, Shuichiro / Kawada, Susumu / Isao, Akihiko / Sasaki, Takaei / Maetoko, Kazuyuki / Yoshioka, Nobuyuki et al. | 2001
- 846
-
Development of a MoSi-based bilayer HT-PSM blank for ArF lithography [4186-93]Kanai, S. / Kawada, S. / Isao, A. / Sasaki, T. / Maetoko, K. / Yoshioka, N. / SPIE et al. | 2001
- 853
-
CD variation analysis technique and its application to the study of PSM mask misalignmentGranik, Yuri / Cobb, Nicolas B. / Sahouria, Emile Y. et al. | 2001
- 853
-
CD variation analysis technique and its application to the study of PSM mask misalignment [4186-94]Granik, Y. / Cobb, N. B. / Sahouria, E. Y. / SPIE et al. | 2001
- 862
-
Phase and transmission errors aware OPC solution for PSM: feasability demonstrationToublan, Olivier / Sahouria, Emile Y. / Cobb, Nicolas B. et al. | 2001
- 862
-
Phase and transmission errors aware OPC solution for PSM: feasability demonstration [4186-95]Toublan, O. / Sahouria, E. Y. / Cobb, N. B. / SPIE et al. | 2001
- 869
-
High-optical-density photomasks for large exposure applications [4186-96]Schurz, D. L. / Flack, W. W. / Nakamura, M. / SPIE et al. | 2001
- 869
-
High-optical-density photomasks for large exposure applicationsSchurz, Dan L. / Flack, Warren W. / Nakamura, Makoto et al. | 2001
- 881
-
Defect dispositioning using mask printability on attenuated phase-shift production photomasks [4186-97]Novak, J. W. / Eynon, B. G. / Poortinga, E. / Rosenbusch, A. / Eran, Y. / SPIE et al. | 2001
- 881
-
Defect dispositioning using mask printability on attenuated phase-shift production photomasksNovak, Justin W. / Eynon, Benjamin G. / Poortinga, Eric / Rosenbusch, Anja / Eran, Yair et al. | 2001
- 890
-
Establishment of production process and assurance method for alternating phase-shift masks (Best Poster Paper Award) [4186-98]Murai, S. M. / Koizumi, Y. / Kamibayashi, T. / Saitou, H. / Hoga, M. / Morikawa, Y. / Miyashita, H. / SPIE et al. | 2001
- 890
-
Establishment of production process and assurance method for alternating phase-shift masksMurai, Shiaki M. / Koizumi, Yasuhiro / Kamibayashi, Tatsuhiko / Saitou, Hidetaka / Hoga, Morihisa / Morikawa, Yasutaka / Miyashita, Hiroyuki et al. | 2001
- 902
-
Mask manufacturing contribution on 248-nm and 193-nm lithography performancesBarberet, Alexandra / Fanget, Gilles L. / Richoilley, Jean-Charles / Tissier, Michel / Quere, Yves et al. | 2001
- 902
-
Mask manufacturing contribution on 248-nm and 193-nm lithography performances [4186-104]Barberet, A. / Fanget, G. L. / Richoilley, J.-C. / Tissier, M. / Quere, Y. / SPIE et al. | 2001
- 911
-
Minimization of mask transmission asymmetry effect for chromeless phase-shift masks [4186-105]Chan, D. / Novak, J. W. / Fritze, M. / SPIE et al. | 2001
- 911
-
Minimization of mask transmission asymmetry effect for chromeless phase-shift masksChan, David Y. / Novak, Justin W. / Fritze, Michael et al. | 2001
- 921
-
Dual-mask model-based proximity correction for high-performance 0.10-μm CMOS processPalmer, Shane R. / Mason, Mark E. / Randall, John N. / Aton, Tom / Kim, Keeho / Tritchkov, Alexander V. / Burdorf, James / Rieger, Michael L. / Stirniman, John P. et al. | 2001
- 921
-
Dual-mask model-based proximity correction for high-performance 0.10-mum CMOS process [4186-107]Palmer, S. R. / Mason, M. E. / Randall, J. N. / Aton, T. / Kim, K. / Tritchkov, A. V. / Burdorf, J. / Rieger, M. L. / Stirniman, J. P. / SPIE et al. | 2001