Memristive Devices for Computing: Mechanisms, Applications and Challenges (Englisch)
- Neue Suche nach: Yang, J.J.
- Neue Suche nach: Choi, B.J.
- Neue Suche nach: Zhang, M.X.
- Neue Suche nach: Torrezan, A.C.
- Neue Suche nach: Strachan, J.P.
- Neue Suche nach: Williams, R.S.
- Neue Suche nach: Electrochemical Society
- Neue Suche nach: Yang, J.J.
- Neue Suche nach: Choi, B.J.
- Neue Suche nach: Zhang, M.X.
- Neue Suche nach: Torrezan, A.C.
- Neue Suche nach: Strachan, J.P.
- Neue Suche nach: Williams, R.S.
- Neue Suche nach: Claeys, C.
- Neue Suche nach: Electrochemical Society
In:
ULSI process integration; ULSI process integration 8; editors: C. Claeys [and four others]
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9-16
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2013
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ISBN:
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ISSN:
- Aufsatz (Konferenz) / Print
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Titel:Memristive Devices for Computing: Mechanisms, Applications and Challenges
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Beteiligte:Yang, J.J. ( Autor:in ) / Choi, B.J. ( Autor:in ) / Zhang, M.X. ( Autor:in ) / Torrezan, A.C. ( Autor:in ) / Strachan, J.P. ( Autor:in ) / Williams, R.S. ( Autor:in ) / Claeys, C. / Electrochemical Society
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Kongress:Symposium; 8th, ULSI process integration; ULSI process integration 8; editors: C. Claeys [and four others] ; 2013 ; San Francisco, CA
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Erschienen in:ULSI process integration; ULSI process integration 8; editors: C. Claeys [and four others] , 9 ; 9-16ECS TRANSACTIONS ; 58, 9 ; 9-16
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Verlag:
- Neue Suche nach: Electrochemical Society
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Erscheinungsort:Pennington, N.J.
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Erscheinungsdatum:01.01.2013
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Format / Umfang:8 pages
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Anmerkungen:Includes bibliographical references and index
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ISBN:
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ISSN:
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Medientyp:Aufsatz (Konferenz)
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Format:Print
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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FDSOI Technology: A Power Efficient Solution Down to 10nmFaynot, O. / Vinet, M. / Fenouillet, C. / Weber, O. / Perreau, P. / Grenouillet, L. / Andrieu, F. / Poiroux, T. / Deleonibus, S. / Electrochemical Society et al. | 2013
- 9
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Memristive Devices for Computing: Mechanisms, Applications and ChallengesYang, J.J. / Choi, B.J. / Zhang, M.X. / Torrezan, A.C. / Strachan, J.P. / Williams, R.S. / Electrochemical Society et al. | 2013
- 17
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(Invited) Low Temperature Direct Bonding 3D Stacking Technologies for High Density Device IntegrationDi Cioccio, L. / Radu, I. / Gaudin, G. / Lacave, T. / Baudin, F. / Sadaka, M. / Signamarcheix, T. / Electrochemical Society et al. | 2013
- 29
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(Invited) Mn~5Ge~3C~0~.~8 Contacts for Spin Injection Into GeFischer, I.A. / Surgers, C. / Petit, M. / Le Thanh, V. / Schulze, J. / Electrochemical Society et al. | 2013
- 29
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Mn5Ge3C0.8 Contacts for Spin Injection into GeFischer, I.A. / Sürgers, C. / Petit, M. / Thanh, V. Le / Schulze, J. et al. | 2013
- 37
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(Invited) Development of Multifunctional Liner/Barrier Systems for Sub-14nm MetallizationEisenbraun, E. / Electrochemical Society et al. | 2013
- 37
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Development of Multifunctional Liner/Barrier Systems for Sub-14nm MetallizationEisenbaum, E. et al. | 2013
- 43
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Optimization of Cu Damascene Electrodeposition Process in ULSI for Yield and Reliability ImprovementShao, I. / Cheng, T. / Findeis, P. / Kelly, J. / Ahmed, S. / Angyal, M. / Xu, Y. / Li, B. / Tinkler, J. / Lustig, N. et al. | 2013
- 49
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ALD W CMP for HKMGYang, T. / Wang, G. / Xu, Q. / Lu, Y. / Yu, J. / Cui, H. / Yan, J. / Li, J. / Zhao, C. / Electrochemical Society et al. | 2013
- 53
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Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier HeightYamamoto, K. / Asakawa, K. / Wang, D. / Nakashima, H. / Electrochemical Society et al. | 2013
- 63
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(Invited) Single Electron and Single Atom CMOS PerspectivesJehl, X. / Sanquer, M. / Vinet, M. / Wacquez, R. / Electrochemical Society et al. | 2013
- 63
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Single Electron and Single Atom CMOS PerspectivesJehl, Xavier / Sanquer, Marc / Vinet, M. / Wacquez, Romain et al. | 2013
- 73
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High-speed operation of Si single-electron transistorTakahashi, Yasuo / Takenaka, Hiroto / Uchida, Takafumi / Arita, Masashi / Fujiwara, Akira / Inokawa, Hiroshi et al. | 2013
- 73
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(Invited) High-Speed Operation of Si Single-Electron TransistorTakahashi, Y. / Takenaka, H. / Uchida, T. / Arita, M. / Fujiwara, A. / Inokawa, H. / Electrochemical Society et al. | 2013
- 81
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Si/SiGe Resonant Interband Tunnel Diodes Grown by Large-Area Chemical Vapor DepositionBerger, Paul R. / Ramesh, Anisha / Loo, Roger et al. | 2013
- 81
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(Invited) Si/SiGe Resonant Interband Tunnel Diodes Grown by Large-Area Chemical Vapor DepositionBerger, P. / Ramesh, A. / Loo, R. / Electrochemical Society et al. | 2013
- 89
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Dopant-atom-based Tunnel SOI-MOSFETsTabe, M. / Moraru, D. / Hamid, E. / Samanta, A. / Anh, L.T. / Mizuno, T. / Mizuta, H. et al. | 2013
- 89
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(Invited) Dopant-Atom-Based Tunnel SOI-MOSFETsTabe, M. / Moraru, D. / Hamid, E. / Samanta, A. / Anh, L.T. / Mizuno, T. / Mizuta, H. / Electrochemical Society et al. | 2013
- 97
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(Invited) Wide Bandgap Heterojunctions on Crystalline SiliconSturm, J. / Avasthi, S. / Nagamatsu, K. / Jhaveri, J. / McClain, W.E. / Man, G. / Kahn, A. / Schwartz, J. / Wagner, S. / Electrochemical Society et al. | 2013
- 97
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Wide Bandgap Heterojunctions on Crystalline SiliconSturm, J.C. / Avasthi, S. / Nagamatsu, K. / Jhaveri, J. / McClain, W. / Man, G. / Kahn, A. / Schwartz, J. / Wagner, S. et al. | 2013
- 109
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(Invited) Status and Future of IC Analog TechnologiesBergemont, A. / Electrochemical Society et al. | 2013
- 109
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Status and Future of IC Analog TechnologiesBergemont, Albert et al. | 2013
- 115
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MEMS and Photonics Module Integration into SiGe BiCMOS Technology for More than Moore Functional DiversificationTillack, B. / Heinemann, B. / Kaynak, M. / Knoll, D. / Lischke, S. / Mai, A. / Rücker, H. / Yamamoto, Y. / Zimmermann, L. et al. | 2013
- 115
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(Invited) MEMS and Photonics Module Integration into SiGe BiCMOS Technology for More than Moore Functional DiversificationTillack, B. / Heinemann, B. / Kaynak, M. / Knoll, D. / Lischke, S. / Mai, A. / Rucker, H. / Yamamoto, Y. / Zimmermann, L. / Electrochemical Society et al. | 2013
- 125
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Bio-MEMS Chip for Bacteria Detection - A Challenge of Si Technology to Biomedical FieldIshii, H. / Sawada, K. / Ishida, M. / Machida, K. / Iida, K. / Saito, M. / Yoshida, S. et al. | 2013
- 125
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(Invited) Bio-MEMS Chip for Bacteria Detection -A Challenge of Si Technology to Biomedical Field-Ishii, H. / Sawada, K. / Ishida, M. / Machida, K. / Iida, K.I. / Saito, M. / Yoshida, S.I. / Electrochemical Society et al. | 2013
- 137
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Performance Enhancement Technologies in III-V/Ge MOSFETsTakagi, S. / Zhang, R. / Kim, S.H. / Yokohama, M. / Takenaka, M. et al. | 2013
- 137
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(Invited) Performance Enhancement Technologies in III-V/Ge MOSFETsTakagi, S. / Zhang, R. / Kim, S.H. / Yokoyama, M. / Takenaka, M. / Electrochemical Society et al. | 2013
- 149
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Heteroepitaxial Growth of Sn-related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and OpportunitiesNakatsuka, Osamu / Taoka, Noriyuki / Asano, Takanori / Yamaha, Takashi / Kurosawa, Masashi / Sakashita, Mitsuo / Zaima, Shigeaki et al. | 2013
- 149
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(Invited) Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and OpportunitiesNakatsuka, O. / Taoka, N. / Asano, T. / Yamaha, T. / Kurosawa, M. / Sakashita, M. / Zaima, S. / Electrochemical Society et al. | 2013
- 157
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The Effect of Carbon Doping on Structural and Magnetic Properties of Mn5Ge3/Ge HeterosctructuresSpiesser, A. / Dau, M.T. / Michez, L.A. / Petit, M. / Thanh, V. Le et al. | 2013
- 157
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(Invited) The Effect of Carbon Doping on Structural and Magnetic Properties of Mn~5Ge~3/Ge HeterosctructuresSpiesser, A. / Dau, M.T. / Michez, L.A. / Petit, M. / Le Thanh, V. / Electrochemical Society et al. | 2013
- 167
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Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge ContactsNakashima, Hiroshi / Yamamoto, Keisuke / Wang, Dong et al. | 2013
- 167
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(Invited) Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge ContactsNakashima, H. / Yamamoto, K. / Wang, D. / Electrochemical Society et al. | 2013
- 179
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High-Quality Hybrid-GeSn/Ge Stacked-Structures by Low-Temperature Sn Induced-Melting GrowthKinoshita, Y. / Matsumura, R. / Sadoh, T. / Nishimura, T. / Miyao, M. / Electrochemical Society et al. | 2013
- 185
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Characterization of Local Strain Structures in Heteroepitaxial Ge~1~-~xSn~x/Ge Microstructures by Using Microdiffraction MethodIke, S. / Moriyama, Y. / Kurosawa, M. / Taoka, N. / Nakatsuka, O. / Imai, Y. / Kimura, S. / Tezuka, T. / Zaima, S. / Electrochemical Society et al. | 2013
- 195
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(Invited) Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD ProcessingSakuraba, M. / Murota, J. / Electrochemical Society et al. | 2013
- 195
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Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD ProcessingSakuraba, Masao / Murota, Junichi et al. | 2013
- 201
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Atomically Flat Germanium (111) Surface by Hydrogen AnnealingNishimura, T. / Kabuyanagi, S. / Lee, C. / Yajima, T. / Nagashio, K. / Toriumi, A. / Electrochemical Society et al. | 2013
- 207
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Formation and Characterization of Strained Si~1~-~XGe~x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate HeatingUeno, N. / Sakuraba, M. / Murota, J. / Sato, S. / Electrochemical Society et al. | 2013
- 213
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(Invited) Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible ElectronicsSadoh, T. / Park, J.H. / Kurosawa, M. / Miyao, M. / Electrochemical Society et al. | 2013
- 213
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Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible ElectronicsSadoh, T. / Park, J.H. / Kurosawa, M. / Miyao, M. et al. | 2013
- 223
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Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate HeatingAbe, Y. / Kubota, S. / Sakuraba, M. / Murota, J. / Sato, S. / Electrochemical Society et al. | 2013
- 231
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Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic ApplicationMiyazaki, Seiichi / Ikeda, Mitsuhisa / Makihara, Katsunori et al. | 2013
- 231
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(Invited) Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic ApplicationMiyazaki, S. / Ikeda, M. / Makihara, K. / Electrochemical Society et al. | 2013
- 239
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Source and Drain Contact Module for FDSOI MOSFETs: Silicidation and Strain EngineeringCarron, V. / Nemouchi, F. / Hartmann, J.M. / Cooper, D. / Damlencourt, J.F. / Bernasconi, S. / Favier, S. / Morand, Y. / Electrochemical Society et al. | 2013
- 249
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Fin Doping by Hot Implant for 14nm FinFET Technology and BeyondWood, B.S. / Khaja, F.A. / Colombeau, B.P. / Sun, S. / Waite, A. / Jin, M. / Chen, H. / Chan, O. / Thanigaivelan, T. / Pradhan, N. et al. | 2013
- 257
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Liquid-Solid Coexisting Annealing of a-GeSn/Si(100) Structure for Low Temperature Epitaxial Growth of SiGeChikita, H. / Matsumura, R. / Sadoh, T. / Miyao, M. / Electrochemical Society et al. | 2013
- 265
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(Invited) Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETsTsuchiya, T. / Tamura, N. / Sakakidani, A. / Sonoda, K. / Kamei, M. / Yamakawa, S. / Kuwabara, S. / Electrochemical Society et al. | 2013
- 265
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Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETsTsuchiya, T. / Tamura, N. / Sakakidani, A. / Sonoda, K. / Kamei, M. / Yamakawa, S. / Kuwabara, S. et al. | 2013
- 281
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Low-Frequency-Noise-Based Oxide Trap Profiling in Replacement High-k/Metal-Gate pMOSFETsSimoen, E.R. / Lee, J.W. / Veloso, A. / Paraschiv, V. / Horiguchi, N. / Claeys, C. / Electrochemical Society et al. | 2013
- 293
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Resistive Switching Properties of SiO~x/TiO~2 Multi-Stack in Ti-Electrode MIM DiodesOhta, A. / Makihara, K. / Fukusima, M. / Murakami, H. / Higashi, S. / Miyazaki, S. / Electrochemical Society et al. | 2013
- 301
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Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al~2O~3/Ge InterfaceShibayama, S. / Kato, K. / Sakashita, M. / Takeuchi, W. / Taoka, N. / Nakatsuka, O. / Zaima, S. / Electrochemical Society et al. | 2013
- 309
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High Electron Mobility in Germanium Junctionless n-MOSFETsKabuyanagi, S. / Nishimura, T. / Nagashio, K. / Toriumi, A. / Electrochemical Society et al. | 2013