Iterative spectral solution of the Poisson-Boltzmann equation in semiconductor devices (Unbekannt)
- Neue Suche nach: Floyd, B. H.
- Neue Suche nach: Le Coz, Y. L.
- Neue Suche nach: Floyd, B. H.
- Neue Suche nach: Le Coz, Y. L.
In:
JOURNAL OF APPLIED PHYSICS
;
76
, 12
;
7889
;
1994
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Iterative spectral solution of the Poisson-Boltzmann equation in semiconductor devices
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Beteiligte:Floyd, B. H. ( Autor:in ) / Le Coz, Y. L. ( Autor:in )
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Erschienen in:JOURNAL OF APPLIED PHYSICS ; 76, 12 ; 7889
-
Verlag:
- Neue Suche nach: AMERICAN INSTITUTE OF PHYSICS
-
Erscheinungsdatum:01.01.1994
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Format / Umfang:7889 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Unbekannt
- Neue Suche nach: 530.5 / 530
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
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Datenquelle:
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- 7671
-
The potential generated by current sources located in an insulated rectangular volume conductorFerguson, A. Stewart / Stroink, G. et al. | 1994
- 7677
-
Nonmagnetic contrast in scanning Lorentz electron microscopy of polycrystalline magnetic filmsTakahashi, Yoshio / Yajima, Yusuke et al. | 1994
- 7677
-
Nonmagnetic constrast in scanning Lorentz electron microscopy of polycrystalline magnetic filmsTakahashi, Y. / Yajima, Y. et al. | 1994
- 7682
-
Instability of an expanding charged‐particle beamBook, David L. et al. | 1994
- 7690
-
Fourier extrapolation of magnetic fields measured by electron‐beam tomographyShinada, Hiroyuki / Suzuki, Yoshio et al. | 1994
- 7695
-
Thermal stresses in tightly jacketed double‐coated optical fibers at low temperatureShiue, Sham‐Tsong et al. | 1994
- 7704
-
Extension of the tuning range of a femtosecond Ti:sapphire laser amplifier through cascaded second‐order nonlinear frequency conversion processesPetrov, V. / Seifert, F. / Kittelmann, O. / Ringling, J. / Noack, F. et al. | 1994
- 7713
-
Optical pulse mixing measurement of carrier lifetime and absorption recovery time in reverse‐biased GaAs/AlGaAs single quantum well laser structuresBrovelli, L. R. / Hugi, J. / Ja¨ckel, H. / Melchior, H. et al. | 1994
- 7720
-
Imaging InGaAsP quantum-well lasers using near-field scanning optical microscopyBuratto, S. K. / Hsu, J. W. P. / Trautman, J. K. / Betzig, E. / Bylsma, R. B. / Bahr, C. C. / Cardillo, M. J. et al. | 1994
- 7726
-
Ultrasonic phase velocity and elastic modulus in isotopically enhanced manufactured diamondsHurley, D. C. / Gilmore, R. S. / Banholzer, W. F. et al. | 1994
- 7731
-
Variational approach to the calculation of the radii in the stagnant core model of shaped charge jet formationCurtis, J. P. / Kelly, R. J. / Cowan, K. G. et al. | 1994
- 7741
-
Plasma‐filled applied B ion diode experiments using a plasma opening switchRenk, T. J. et al. | 1994
- 7750
-
Spectroscopic measurements of laser induced plasma during welding with CO2 laserSzyman´ski, Z. / Kurzyna, J. et al. | 1994
- 7757
-
Mathematical modeling of high‐power transferred arcsCao, M. / Proulx, P. / Boulos, M. I. / Mostaghimi, J. et al. | 1994
- 7768
-
Local crystal orientation in III‐V semiconductors: Polarization selective Raman microprobe measurementsIrmer, G. et al. | 1994
- 7774
-
Surface modification during scanning tunneling microscope measurements on YBa2Cu3O7 thin filmsGeyer, Ulrich / von Minnigerode, Gunther / Krebs, Hans‐Ulrich et al. | 1994
- 7778
-
Linear electro‐optic effect based on flexoelectricity in a cholesteric with sign change of dielectric anisotropyRudquist, P. / Buivydas, M. / Komitov, L. / Lagerwall, S. T. et al. | 1994
- 7778
-
Linear electro-optic effect based on flexoelectricity on a cholesteric with sign change of dielectric anisotropyRudquist, P. / Buivydas, M. / Komitov, L. / Lagerwall, S.T. et al. | 1994
- 7784
-
Damping capacity of layered materialsBrandner, E. D. / Munier, Alain / Zhu, Jian‐Ming / Averill, Bruce A. / Shivaram, Bellave S. et al. | 1994
- 7790
-
Plastically deformed region around indentations on Si single crystalYoshioka, M. et al. | 1994
- 7797
-
Influence of In on Si local vibrational modes in In(x)Ga(1-x)As (0 less or equal x less or equal 0.12)Alvarez, A.L. / Calle, F. / Wagner, J. / Sacedon, A. / Maier, M. / Fernandez de Avila, S. / Lourenco, M.A. / Calleja, E. / Munoz, E. et al. | 1994
- 7797
-
Influence of In on Si local vibrational modes in InxGa1−xAs (0≤x≤0.12)Alvarez, A. L. / Calle, F. / Wagner, J. / Sacedo´n, A. / Maier, M. / Ferna´ndez de Avila, S. / Lourenc¸o, M. A. / Calleja, E. / Mun˜oz, E. et al. | 1994
- 7797
-
Influence of In on Si local vibrational modes in lnxGa1 x)As (0<=x<=0.12)Alvarez, A.L. et al. | 1994
- 7805
-
Surface energies and morphologies of chemical‐vapor‐deposited diamond filmsZhang, Yafei / Zhang, Fangqing / Chen, Guanghua et al. | 1994
- 7809
-
Real‐structure effects in the dynamical theory of grazing incidence x‐ray diffractionStepanov, S. A. / Ko¨hler, R. et al. | 1994
- 7816
-
Triple axis x‐ray investigations of semiconductor surface corrugationsDarhuber, A. A. / Koppensteiner, E. / Straub, H. / Brunthaler, G. / Faschinger, W. / Bauer, G. et al. | 1994
- 7824
-
Strain effects in epitaxial GaN grown on AIN-buffered Si(111)Meng, W.J. et al. | 1994
- 7824
-
Strain effects in epitaxial GaN grown on AlN‐buffered Si(111)Meng, W. J. / Perry, T. A. et al. | 1994
- 7829
-
Misfit dislocation generation mechanisms in InGaAs/GaAs heterostructuresKui, J. / Jesser, W. A. / Jones, S. H. et al. | 1994
- 7833
-
Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporationYano, Y. / Iijima, K. / Daitoh, Y. / Terashima, T. / Bando, Y. / Watanabe, Y. / Kasatani, H. / Terauchi, H. et al. | 1994
- 7839
-
A local vibrational mode investigation of p‐type Si‐doped GaAsAshwin, M. J. / Fahy, M. R. / Newman, R. C. / Wagner, J. / Robbie, D. A. / Sangster, M. J. L. / Silier, I. / Bauser, E. / Braun, W. / Ploog, K. et al. | 1994
- 7850
-
Intermetallic phase formation during annealing of Al/Ni multilayersEdelstein, A. S. / Everett, R. K. / Richardson, G. Y. / Qadri, S. B. / Altman, E. I. / Foley, J. C. / Perepezko, J. H. et al. | 1994
- 7860
-
Surface‐sensitive x‐ray fluorescence analysis at glancing incident and takeoff anglesTsuji, Kouichi / Sato, Shigeo / Hirokawa, Kichinosuke et al. | 1994
- 7864
-
Local structure of CuInSe2 thin film studied by extended x‐ray absorption fine structureKuwahara, Yuji / Oyanagi, Hiroyuki / Yamaguchi, Hirotaka / Aono, Masakazu / Shirakata, Sho / Isomura, Shigehiro et al. | 1994
- 7870
-
Nonlinear optical response, screening, and distribution of strain in piezoelectric multiple quantum wellsHuang, X. R. / Harken, D. R. / Cartwright, A. N. / McCallum, D. S. / Smirl, Arthur L. / Sa´nchez‐Rojas, J. L. / Sacedo´n, A. / Gonza´lez‐Sanz, F. / Calleja, E. / Mun˜oz, E. et al. | 1994
- 7874
-
Study of C49‐TiSi2 and C54‐TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealingClevenger, L. A. / Mann, R. W. / Roy, R. A. / Saenger, K. L. / Cabral, C. / Piccirillo, J. et al. | 1994
- 7882
-
Hydrogen effect on the optical activity of dislocations in silicon introduced at room temperatureSekiguchi, T. / Kveder, V. V. / Sumino, K. et al. | 1994
- 7889
-
Iterative spectral solution of the Poisson‐Boltzmann equation in semiconductor devicesFloyd, Brian H. / Le Coz, Yannick L. et al. | 1994
- 7899
-
Thermoelectric properties of Cu‐doped dysprosium sesquisulfideHan, S. H. / Gschneidner, K. A. / Cook, B. A. et al. | 1994
- 7907
-
Built-in biaxial strain dependence of G-X transport in GaAs-InxAl1-xAs-GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06)Yang, K. et al. | 1994
- 7907
-
Built‐in biaxial strain dependence of Γ‐X transport in GaAs/InxAl1−xAs/GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06)Yang, K. / East, J. R. / Haddad, G. I. / Drummond, T. J. / Brennan, T. M. / Hammons, B. E. et al. | 1994
- 7915
-
Anisotropic dc conductivity in stretch‐oriented iodine‐doped poly[3‐(4‐octylphenyl)‐2,2′‐bithiophene]Dyreklev, P. / Ingana¨s, O. et al. | 1994
- 7920
-
Departures from the principle of superposition in silicon solar cellsRobinson, S. J. / Aberle, A. G. / Green, M. A. et al. | 1994
- 7931
-
Schottky barrier height modification on n‐ and p‐type GaInP with thin interfacial SiMiller, T. J. / Backes, G. B. / Nathan, M. I. et al. | 1994
- 7935
-
Generation of electron carriers in insulating thin film of MgIn2O4 spinel by Li+ implantationKawazoe, H. / Ueda, N. / Un’no, H. / Omata, T. / Hosono, H. / Tanoue, H. et al. | 1994
- 7942
-
Investigation of tensile‐strained InGaAlP multiquantum‐well active regions by photoluminescence measurementsWatanabe, Minoru / Matsuura, Hatsumi / Shimada, Naohiro et al. | 1994
- 7947
-
Self‐consistent finite difference method for simulation and optimization of quantum well electron transfer structuresWeinert, C. M. / Agrawal, N. et al. | 1994
- 7957
-
Undoped semi‐insulating GaAs epitaxial layers and their characterizationImaizumi, T. / Okazaki, H. / Yamamoto, H. / Oda, O. et al. | 1994
- 7966
-
Physical and electrical investigation of ohmic contacts to AlGaAs/GaAs heterostructuresTaylor, R. P. / Coleridge, P. T. / Davies, M. / Feng, Y. / McCaffrey, J. P. / Marshall, P. A. et al. | 1994
- 7973
-
Schottky diodes with high series resistance: Limitations of forward I‐V methodsAubry, V. / Meyer, F. et al. | 1994
- 7985
-
Electrical characterization of rapid thermal nitrided and reoxidized plasma‐enhanced chemical‐vapor‐deposited silicon dioxide metal‐oxide‐silicon structuresAng, S. S. / Shi, Y. J. / Brown, W. D. et al. | 1994
- 7985
-
Electrical characterization of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapour-deposited silicon dioxide metal-oxide-silicon structuresAng, S.S. / Shi, Y.J. / Brown, W.D. et al. | 1994
- 7990
-
Elimination of hydrogen-related instabilities in Si-SiO2 structures fluorine implantationAfanas'ev, V.V. et al. | 1994
- 7990
-
Elimination of hydrogen‐related instabilities in Si/SiO2 structures by fluorine implantationAfanas’ev, V. V. / de Nijs, J. M. M. / Balk, P. et al. | 1994
- 7998
-
Hole subband in p‐type channel of semiconductor heterostructuresLiu, Kun / Chu, J. H. / Ou, H. J. / Tang, D. Y. et al. | 1994
- 8001
-
New critical‐state model for magnetization of hard type‐II superconductorsJohansen, T. H. / Bratsberg, H. et al. | 1994
- 8005
-
Spatially resolved analysis of high‐Tc grain boundary Josephson junctions and arraysGerdemann, R. / Husemann, K.‐D. / Gross, R. / Alff, L. / Beck, A. / Elia, B. / Reuter, W. / Siegel, M. et al. | 1994
- 8016
-
The ac‐Josephson effect above the gap frequencyde Lange, G. / Kuipers, J. J. / Klapwijk, T. M. / Panhuyzen, R. A. / van de Stadt, H. / de Graauw, M. W. M. et al. | 1994
- 8022
-
Bloch wall energy in (Tb,Nd)‐(Fe,Co) thin filmsRaasch, D. / Hansen, P. / Mergel, D. et al. | 1994
- 8025
-
Compositional inhomogeneities in sputtered Co‐Cr magnetic thin films studied by atom probe field ion microscopyHono, K. / Maeda, Y. / Babu, S. S. / Sakurai, T. et al. | 1994
- 8032
-
Optical constants of sapphire (a-Al2O3) single crystalsKasim Harman, Alang et al. | 1994
- 8032
-
Optical constants of sapphire (α‐Al2O3) single crystalsHarman, Alang Kasim / Ninomiya, Susumu / Adachi, Sadao et al. | 1994
- 8032
-
Optical constants of sapphire (alpha-Al2O3) single crystalsAlang Kasim Harman / Ninomiya, Susumu / Adachi, Sadao et al. | 1994
- 8037
-
Growth by molecular‐beam epitaxy and photoluminescence of InGaAs/GaAs quantum wells on GaAs (111)A substratesVaccaro, Pablo O. / Takahashi, Mitsuo / Fujita, Kazuhisa / Watanabe, Toshihide et al. | 1994
- 8042
-
Dependence of the interface sharpness of a Ge single quantum well on molecular‐beam‐epitaxial growth conditionsKissinger, W. / Osten, H. J. / Lippert, G. / Dietrich, B. / Bugiel, E. et al. | 1994
- 8048
-
Optical dispersion of AlxGa1−xAs at crystal growth temperatureShin, Jae‐Heon / Lee, Yong‐Hee et al. | 1994
- 8051
-
Photoluminescence measurements of complex defects in Si-doped Al(sub 0.3)Ga0.7AsPaula, Ana M.de et al. | 1994
- 8051
-
Photoluminescence measurements of complex defects in Si‐doped Al0.3Ga0.7Asde Paula, Ana M. / Medeiros‐Ribeiro, G. / de Oliveira, A. G. et al. | 1994
- 8055
-
Ejection of positive ions from plasmas induced by laser ablation of Si and Nd1.85Ce0.15CuO4van Ingen, R. P. et al. | 1994
- 8065
-
Angle‐resolved time‐of‐flight spectrometry of neutrals laser ablated from Nd1.85Ce0.15CuO4van Ingen, R. P. et al. | 1994
- 8077
-
Diagnostics of YBa2Cu3O(7-delta) laser plume by time-of-flight mass spectrometryBerardi, V. / Amoruso, S. / Spinelli, N. / Armenante, M. / Velotta, R. / Fuso, F. / Allegrini, M. / Arimondo, E. et al. | 1994
- 8077
-
Diagnostics of YBa2Cu3O7-d laser plume by time-of-flight mass spectrometryBerardi, V. et al. | 1994
- 8077
-
Diagnostics of YBa2Cu3O7−δ laser plume by time‐of‐flight mass spectrometryBerardi, V. / Amoruso, S. / Spinelli, N. / Armenante, M. / Velotta, R. / Fuso, F. / Allegrini, M. / Arimondo, E. et al. | 1994
- 8088
-
Stark broadening diagnostics of the electron density in the laser ablation plume of YBa2Cu3O7−x and PbZrxTi1−xO3Fuso, Francesco / Vyacheslavov, Leonid N. / Masciarelli, Guglielmo / Arimondo, Ennio et al. | 1994
- 8097
-
Self‐multilayered structures of SiN films prepared by plasma‐enhanced reactive sputteringSugimoto, Iwao / Nakano, Satoko / Kuwano, Hiroki et al. | 1994
- 8105
-
Ultrahigh‐vacuum scanning electron microscopy characterization of the growth of Fe on CaF2/Si(111): Selective nucleation on electron‐beam modified surfacesHeim, K. R. / Hembree, G. G. / Scheinfein, M. R. et al. | 1994
- 8113
-
Study of diamond thin‐film growth mechanism in a filament‐assisted excimer laser ablation systemChen, H. / Maffei, N. / Prince, R. H. et al. | 1994
- 8117
-
Frictional behavior of highly oriented pyrolytic graphiteRuan, Ju‐Ai / Bhushan, Bharat et al. | 1994
- 8121
-
Investigation of the photoresponse of lipid monolayers containing azobenzene derivatives by a Maxwell‐displacement‐current‐measuring techniqueIwamoto, Mitsumasa / Ohnishi, Koji et al. | 1994
- 8129
-
The maximum overall coefficient of performance of a solar‐driven heat pump systemYan, Zijun / Chen, Jincan et al. | 1994
- 8135
-
Heterojunction bipolar transistors in AlGaInP/GaAs grown by metalorganic vapor phase epitaxyYow, H. K. / Houston, P. A. / Button, C. C. / Lee, T.‐W. / Roberts, J. S. et al. | 1994
- 8142
-
Metal/intrinsic semiconductor/semiconductor field effect transistor fabricated from polycrystalline diamond filmsNishimura, Kozo / Kumagai, Kazuo / Nakamura, Rie / Kobashi, Koji et al. | 1994
- 8146
-
Preparation and characterization of CeO2‐based superconducting field effect transistorsPetersen, K. / Walkenhorst, A. / Schmitt, M. / Becherer, T. / Adrian, H. et al. | 1994
- 8150
-
Drain current reduction by source electrode overlap in hydrogenated amorphous silicon thin‐film transistorsUchikoga, Shuichi / Akiyama, Masahiko / Koizumi, Takashi / Tada, Masahiro / Ikeda, Mitsushi / Wada, Tetsunori / Suzuki, Kouji et al. | 1994
- 8155
-
Optical waveguide isolator based on nonreciprocal radiationShintaku, Toshihiro / Uno, Takehiko et al. | 1994
- 8160
-
Mechanism of negative‐bias temperature instability in polycrystalline‐silicon thin film transistorsMaeda, S. / Maegawa, S. / Ipposhi, T. / Nishimura, H. / Ichiki, T. / Mitsuhashi, J. / Ashida, M. / Muragishi, T. / Inoue, Y. / Nishimura, T. et al. | 1994
- 8167
-
Materials and processing aspects of CoCrTa/Cr longitudinal recording media. I. Processing and magnetic propertiesShen, Y. / Laughlin, D. E. / Lambeth, D. N. et al. | 1994
- 8174
-
Materials and processing aspects of CoCrTa/Cr longitudinal recording media. II. MicrostructureShen, Y. / Wong, B. Y. / Laughlin, D. E. et al. | 1994
- 8180
-
Inductance dependence of noise properties of a high‐Tc dc superconducting quantum interference deviceEnpuku, K. / Tokita, G. / Maruo, T. et al. | 1994
- 8186
-
Electron‐spin‐resonance evidence for an impurity‐related E’‐like hole trapping defect in thermally grown SiO2 on SiConley, John F. / Lenahan, P. M. / Evans, H. L. / Lowry, R. K. / Morthorst, T. J. et al. | 1994
- 8189
-
High-brightness InGaN/AlGaN double-heterostucture blue-green-light-emitting diodesNakamura, S. / Mukai, T. / Senoh, M. et al. | 1994
- 8189
-
High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodesNakamura, Shuji / Mukai, Takashi / Senoh, Masayuki et al. | 1994
- 8192
-
Metal‐insulator‐semiconductor capacitors on cleaved GaAs(110)Huang, L. J. / Lau, W. M. / Ingrey, S. / Landheer, D. / Noe¨l, J.‐P. et al. | 1994
- 8195
-
Defect ordering in epitaxial alpha-GaN(0001)Xiao, H.Z. / Lee, N.E. / Powell, R.C. / Ma, Z. / Chou, L.J. / Allen, L.H. / Greene, J.E. / Rockett, A. et al. | 1994
- 8195
-
Defect ordering in epitaxial α‐GaN(0001)Xiao, H. Z. / Lee, N.‐E. / Powell, R. C. / Ma, Z. / Chou, L. J. / Allen, L. H. / Greene, J. E. / Rockett, A. et al. | 1994
- 8195
-
Defect ordering in epitaxial a-GaN(0001)Xiao, H.Z. et al. | 1994
- 8198
-
In situ, real‐time observation of Al chemical‐vapor deposition on SiO2 in an environmental transmission electron microscopeDrucker, Jeff / Sharma, Renu / Weiss, Karl / Kouvetakis, John et al. | 1994
- 8201
-
Synthesis of Ge nanocrystals embedded in a Si host matrixNgiam, Shih‐Tung / Jensen, Klavs F. / Kolenbrander, K. D. et al. | 1994
- 8204
-
GaAs/AlGaAs multiquantum well vertical cavity tunable photodetectorLai, K. / Hansing, C. / Streetman, B. G. / Campbell, J. C. / Leavitt, R. / Simonis, G. et al. | 1994
- 8206
-
Qualitative estimation of optical gain in wide‐band‐gap semiconductor quantum wellsAhn, Doyeol et al. | 1994
- 8209
-
Photoluminescence and electrical properties of erbium‐doped indium oxide films prepared by rf sputteringKim, Hong Koo / Li, Cheng Chung / Nykolak, Gerald / Becker, Philippe C. et al. | 1994
- 8209
-
Photoluminescence and electrical properties of erbium-doped indium oxide films prepared by rf sputtaringHong Koo Kim / Cheng Chung Li / Nykolak, G. / Becker, P. C. et al. | 1994
- 8212
-
Command surface controlled liquid crystalline waveguide structures as optical information storageKnobloch, Harald / Orendi, Horst / Bu¨chel, Michael / Seki, Takahiro / Ito, Shinzaburo / Knoll, Wolfgang et al. | 1994
- 8215
-
Epitaxial growth of RbTiOPO4 films on KTiOPO4 substrates by excimer laser ablation techniqueLiu, Z. G. / Liu, J. M. / Ming, N. B. / Wang, J. Y. / Liu, Y. G. / Jiang, M. H. et al. | 1994
- 8218
-
Electrical breakdown of polyethylene terephthalate under hydrostatic pressureZebouchi, N. / Essolbi, R. / Malec, D. / Giam, Hoang The / Ai, Bui / Bendaoud, M. et al. | 1994
- 8221
-
Summary of the Physics and Astronomy Classification Scheme--1994| 1994
- 8222
-
PACS Headings Used in the Present Index| 1994
- 8227
-
Subject Index to Volume 76| 1994
- 8311
-
Author Index to Volume 76| 1994