X-ray absorption fine structure of ion-implanted Hg~0~.~7~9Cd~0~.~2~1Te semiconductors (Englisch)
- Neue Suche nach: Indrea, E.
- Neue Suche nach: Jaouen, M.
- Neue Suche nach: Chartier, P.
- Neue Suche nach: Indrea, E.
- Neue Suche nach: Jaouen, M.
- Neue Suche nach: Chartier, P.
In:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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12
, 1
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42-46
;
1997
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:X-ray absorption fine structure of ion-implanted Hg~0~.~7~9Cd~0~.~2~1Te semiconductors
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Beteiligte:
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Erschienen in:SEMICONDUCTOR SCIENCE AND TECHNOLOGY ; 12, 1 ; 42-46
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Verlag:
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Erscheinungsdatum:01.01.1997
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Format / Umfang:5 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 621.38152
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 621.38152 -
Datenquelle:
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