Acceptor and Donor Doping of Al~xGa~1~-~xN Thin Film Alloys Grown on 6H-SiC (0001) Substrates via Metalorganic Vapor Phase Epitaxy (Englisch)
- Neue Suche nach: Bremser, M. D.
- Neue Suche nach: Perry, W. G.
- Neue Suche nach: Nam, O. H.
- Neue Suche nach: Griffis, D. P.
- Neue Suche nach: Loesing, R.
- Neue Suche nach: Ricks, D. A.
- Neue Suche nach: Davis, R. F.
- Neue Suche nach: Bremser, M. D.
- Neue Suche nach: Perry, W. G.
- Neue Suche nach: Nam, O. H.
- Neue Suche nach: Griffis, D. P.
- Neue Suche nach: Loesing, R.
- Neue Suche nach: Ricks, D. A.
- Neue Suche nach: Davis, R. F.
In:
Papers on III-V Nitrides and Silicon Carbide
4
;
229-232
;
1998
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Acceptor and Donor Doping of Al~xGa~1~-~xN Thin Film Alloys Grown on 6H-SiC (0001) Substrates via Metalorganic Vapor Phase Epitaxy
-
Beteiligte:Bremser, M. D. ( Autor:in ) / Perry, W. G. ( Autor:in ) / Nam, O. H. ( Autor:in ) / Griffis, D. P. ( Autor:in ) / Loesing, R. ( Autor:in ) / Ricks, D. A. ( Autor:in ) / Davis, R. F. ( Autor:in )
-
Erschienen in:Papers on III-V Nitrides and Silicon Carbide , 4 ; 229-232JOURNAL OF ELECTRONIC MATERIALS ; 27, 4 ; 229-232
-
Verlag:
- Neue Suche nach: MINERALS METALS & MATERIALS SOCIETY
-
Erscheinungsdatum:01.01.1998
-
Format / Umfang:4 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 621.381
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 621.381 -
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis – Band 27, Ausgabe 4
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 160
-
Materials issues for InGaN-based lasersNakamura, Shuji et al. | 1998
- 166
-
Low bias dry etching of III-nitrides in Cl2-based inductively coupled plasmasCho, Hyun / Vartuli, C. B. / Donovan, S. M. / Mackenzie, J. D. / Abernathy, C. R. / Pearton, S. J. / Shul, R. J. / Constantine, C. et al. | 1998
- 171
-
Non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaNTsen, K. T. / Ferry, D. K. / Botchkarev, A. / Sverdlov, B. / Salvador, A. / Morkoç, H. et al. | 1998
- 175
-
Improved sidewall morphology on dry-etched SiO2 masked GaN featuresRen, F. / Pearton, S. J. / Shul, R. J. / Han, J. et al. | 1998
- 179
-
Si-implantation activation annealing of GaN up to 1400°CZolper, J. C. / Han, J. / Biefeld, R. M. / Deusen, S. B. / Wampler, W. R. / Reiger, D. J. / Pearton, S. J. / Williams, J. S. / Tan, H. H. / Karlicek, R. F. Jr. et al. | 1998
- 185
-
Iron nitride mask and reactive ion etching of GaN filmsLee, Heon / Harris, James S. Jr. et al. | 1998
- 190
-
In-situ reflectance monitoring during MOCVD of AlGaNNg, T. B. / Han, J. / Biefeld, R. M. / Weckwerth, M. V. et al. | 1998
- 196
-
Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contact to n-type GaNLuther, B.P. / Mohney, S.E. / DeLucca, J.M. / Karlicek, R.F. jun. et al. | 1998
- 196
-
Study of Contact Resistivity, Mechanical Integrity, and Thermal Stabilty of Ti/Al and Ta/Al Ohmic Contacts to n-Type GaNLuther, B. P. / Mohney, S. E. / Delucca, J. M. / Karlicek, R. F. et al. | 1998
- 196
-
Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaNLuther, B. P. / Mohney, S. E. / Delucca, J. M. / Karlicek, R. F. Jr. et al. | 1998
- 200
-
Electronic structure of wurtzite- and zinc blende-GaN studied by angle-resolved photoemissionMaruyama, Takahiro / Miyajima, Yutaka / Hata, Kazutaka / Cho, Sung Hwan / Akimoto, Katsuhiro / Okumura, Hajime / Yoshida, Sadafumi / Kato, Hiroo et al. | 1998
- 206
-
P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor depositionEiting, C. J. / Grudowski, P. A. / Dupuis, R. D. et al. | 1998
- 210
-
Transport coefficients of AlGaN/GaN heterostructuresAhoujja, M. / Mitchel, W. C. / Elhamri, S. / Newrock, R. S. / Mast, D. B. / Redwing, J. M. / Tischler, M. A. / Flynn, J. S. et al. | 1998
- 215
-
Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser depositionSudhir, G. S. / Fujii, H. / Wong, W. S. / Kisielowski, C. / Newman, N. / Dieker, C. / Liliental-Weber, Z. / Rubin, M. D. / Weber, E. R. et al. | 1998
- 222
-
Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxyYablonskii, G. P. / Gurskii, A. L. / Lutsenko, E. V. / Marko, I. P. / Schineller, B. / Guttzeit, A. / Schön, O. / Heuken, M. / Heime, K. / Beccard, R. et al. | 1998
- 222
-
Optical properties and recombination mechanism in GaN and GaN:Mg grown by metalorganic vapor phase epitaxyYablonskii, G.P. / Gurskii, A.L. / Lutsenko, E.V. / Marko, I.P. / Schineller, B. / Guttzeit, A. / Schön, O. / Heuken, M. / Heime, K. / Beccard, R. et al. | 1998
- 229
-
Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxyBremser, M. D. / Perry, W. G. / Nam, O. H. / Griffis, D. P. / Loesing, R. / Ricks, D. A. / Davis, R. F. et al. | 1998
- 233
-
Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxyNam, Ok-Hyun / Zheleva, Tsvetanka S. / Bremser, Michael D. / Davis, Robert F. et al. | 1998
- 238
-
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substratesHanser, A. D. / Wolden, C. A. / Perry, W. G. / Zheleva, T. / Carlson, E. P. / Banks, A. D. / Therrien, R. J. / Davis, R. F. et al. | 1998
- 238
-
Analysis of Reactor Geometry and Diluent Gas Flow Effects on the Metalorganic Vapor Phase Epitaxy of AlN and GaN Thin Films on (6H)-SiC SubstratesHanser, A. D. / Wolden, C. A. / Perry, W. G. / Zheleva, T. / Carlson, E. P. / Banks, A. D. / Therrien, R. J. / Davis, R. F. et al. | 1998
- 246
-
Excitation mechanisms of multiple Er3+ sites in Er-implanted GaNKim, S. / Rhee, S. J. / Li, X. / Coleman, J. J. / Bishop, S. G. / Klein, P. B. et al. | 1998
- 255
-
Metal contacts to n-type GaNSchmitz, A. C. / Ping, A. T. / Khan, M. Asif / Chen, Q. / Yang, J. W. / Adesida, I. et al. | 1998
- 261
-
The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaNPing, A. T. / Chen, Q. / Yang, J. W. / Khan, M. Asif / Adesida, I. et al. | 1998
- 266
-
Extended defects in wurtzite nitride semiconductorsPotin, V. / Vermaut, P. / Ruterana, P. / Nouet, G. et al. | 1998
- 276
-
Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxySánchez-García, M. A. / Calleja, E. / Sanchez, F. J. / Calle, F. / Monroy, E. / Basak, D. / Muñoz, E. / Villar, C. / Sanz-Hervas, A. / Aguilar, M. et al. | 1998
- 282
-
Dopant-selective photoenhanced wet etching of GaNYoutsey, C. / Bulman, G. / Adesida, I. et al. | 1998
- 288
-
GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layersNikolaev, A. E. / Rendakova, S. V. / Nikitina, I. P. / Vassilevski, K. V. / Dmitriev, V. A. et al. | 1998
- 292
-
Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxyRendakova, S. V. / Nikitina, I. P. / Tregubova, A. S. / Dmitriev, V. A. et al. | 1998
- 296
-
Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctionsHenning, J. P. / Schoen, K. J. / Melloch, M. R. / Woodall, J. M. / Cooper, J. A. Jr. et al. | 1998
- 300
-
Thickness determination of low doped SiC epi-films on highly doped SiC substratesMacmillan, M. F. / Henry, A. / Janzén, E. et al. | 1998
- 304
-
Surface chemistry of porous silicon carbideShin, W. / Seo, W. / Takai, O. / Koumoto, K. et al. | 1998
- 308
-
Preparation of atomically flat surfaces on silicon carbide using hydrogen etchingRamachandran, V. / Brady, M. F. / Smith, A. R. / Feenstra, R. M. / Greve, D. W. et al. | 1998
- 313
-
Anomalous oxidation rate in 6H-SiC depending on the partial pressure of O2 and H2OUeno, Katsunori et al. | 1998
- 317
-
Perimeter governed minority carrier lifetimes in 4H-SiC p+n diodes measured by reverse recovery switching transient analysisNeudeck, Philip G. et al. | 1998
- 317
-
Perimeter governed minority carrier lifetimes in H4-SiC p(+)n diodes measured by reverse recovery switching transient analysisNeudeck, P.G. et al. | 1998
- 324
-
High temperature stability of chromium boride ohmic contacts to p-type 6H-SiCOder, T. N. / Williams, J. R. / Bozack, M. J. / Iyer, V. / Mohney, S. E. / Crofton, J. et al. | 1998
- 330
-
Improved ohmic contact to n-type 4H and 6H-SiC using nichromeLuckowski, E. D. / Delucca, J. M. / Williams, J. R. / Mohney, S. E. / Bozack, M. J. / Isaacs-Smith, T. / Crofton, J. et al. | 1998
- 335
-
Study of avalanche breakdown and impact ionization in 4H silicon carbideKonstantinov, A. O. / Wahab, Q. / Nordell, N. / Lindefelt, U. et al. | 1998
- 342
-
MOVPE production reactors for high temperature electronicsProtzmann, H. / Wachtendorf, B. / Schoen, O. / Schmitz, D. / Strauch, G. / Juergensen, H. et al. | 1998
- 345
-
Nanometer-scale investigation of metal-SiC interfaces using ballistic electron emission microscopyIm, H. J. / Kaczer, B. / Pelz, J. P. / Limpijumnong, S. / Lambrecht, W. R. L. / Choyke, W. J. et al. | 1998
- 353
-
Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interfaceDas, M. K. / Cooper, J. A. Jr. / Melloch, M. R. et al. | 1998
- 358
-
Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodesKimoto, T. / Takemura, O. / Matsunami, H. / Nakata, T. / Inoue, M. et al. | 1998
- 365
-
Performance comparison of wide bandgap semiconductor rf power devicesWeitzel, C. E. / Moore, K. E. et al. | 1998
- 370
-
Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbideCapano, M. A. / Ryu, S. / Melloch, M. R. / Cooper, J. A. Jr. / Buss, M. R. et al. | 1998
- L21
-
Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gatesKim, H. S. / Ko, D. H. / Bae, D. L. / Lee, N. I. / Kim, D. W. / Kang, H. K. / Lee, M. Y. et al. | 1998