Neutron-Irradiation-Induced Effects Caused by the Divacancy Clusters with the Tetravacancy Core in the a Float-Zone Silicon (Englisch)
- Neue Suche nach: Ermolov, P. F.
- Neue Suche nach: Karmanov, D. E.
- Neue Suche nach: Leflat, A. K.
- Neue Suche nach: Manankov, V. M.
- Neue Suche nach: Merkin, M. M.
- Neue Suche nach: Shabalina, E. K.
- Neue Suche nach: Ermolov, P. F.
- Neue Suche nach: Karmanov, D. E.
- Neue Suche nach: Leflat, A. K.
- Neue Suche nach: Manankov, V. M.
- Neue Suche nach: Merkin, M. M.
- Neue Suche nach: Shabalina, E. K.
In:
SEMICONDUCTORS -NEW YORK- C/C OF FIZIKA I TEKHNIKA POLUPROVODNIKOV
;
36
;
1114-1122
;
2002
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Neutron-Irradiation-Induced Effects Caused by the Divacancy Clusters with the Tetravacancy Core in the a Float-Zone Silicon
-
Beteiligte:Ermolov, P. F. ( Autor:in ) / Karmanov, D. E. ( Autor:in ) / Leflat, A. K. ( Autor:in ) / Manankov, V. M. ( Autor:in ) / Merkin, M. M. ( Autor:in ) / Shabalina, E. K. ( Autor:in )
-
Erschienen in:SEMICONDUCTORS -NEW YORK- C/C OF FIZIKA I TEKHNIKA POLUPROVODNIKOV ; 36 ; 1114-1122
-
Verlag:
- Neue Suche nach: AMERICAN INSTITUTE OF PHYSICS
-
Erscheinungsdatum:01.01.2002
-
Format / Umfang:9 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 537.622
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 537.622 -
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis – Band 36
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
Hopping conduction via strongly localized impurity states of indium in PbTe and its solid solutionsRavich, Yu. I. / Nemov, S. A. et al. | 2002
- 130
-
Effect of optical radiation on internal friction in piezoelectric semiconductors with deep-level centersMitrokhin, V. I. / Rembeza, S. I. / Sviridov, V. V. / Yaroslavtsev, N. P. et al. | 2002
- 141
-
Linear photovoltaic effect in gyrotropic crystalsRasulov, R. Ya. / Salenko, Yu. E. / Kambarov, D. et al. | 2002
- 157
-
Effect of ionization on the behavior of silicon in gallium arsenide subjected to electron-beam annealingArdyshev, M. V. / Ardyshev, V. M. et al. | 2002
- 21
-
Influence of the screening effect on passivation of p-type silicon by hydrogenAleksandrov, O. V. et al. | 2002
- 26
-
Special features of hopping conduction in p-Hg0.78Cd0.22Te crystals under conditions of dual dopingBogoboyashchii, V. V. et al. | 2002
- 34
-
On stabilization of the Fermi level in Ga-doped PbTe-based alloysSkipetrov, E. P. / Zvereva, E. A. / Skipetrova, L. A. / Volkova, O. S. / Slyn’ko, E. I. et al. | 2002
- 189
-
Silicon surface treatment by pulsed nitrogen plasmaBaimbetov, F. B. / Ibraev, B. M. / Zhukeshov, A. M. et al. | 2002
- 38
-
Effect of boron dopant on the photoconductivity of microcrystalline hydrogenated silicon filmsKazanskii, A. G. / Mell, H. / Terukov, E. I. / Forsh, P. A. et al. | 2002
- 41
-
Evaluation of physical parameters for the group III nitrates: BN, AlN, GaN, and InNDavydov, S. Yu. et al. | 2002
- 45
-
Optical absorption by transitions between subbands of light and heavy holes in p-MnxHg1−x TeNesmelova, I. M. / Baryshev, N. S. / Andreev, V. A. et al. | 2002
- 48
-
A combined technique for studying the multicomponent spectra of photoreflection from semiconductorsKuz’menko, R. V. / Ganzha, A. V. / Domashevskaya, É. P. et al. | 2002
- 54
-
Sulfide Passivating Coatings on GaAs(100) Surface under Conditions of MBE Growth of /GaAsSedova, I. V. / L vova, T. V. / Ulin, V. P. / Sorokin, S. V. / Ankudinov, A. V. / Berkovits, V. L. / Ivanov, S. V. / Kop ev, P. S. et al. | 2002
- 54
-
Sulfide passivating coatings on GaAs(100) surface under conditions of MBE growth of 〈II–VI〉/GaAsSedova, I. V. / L’vova, T. V. / Ulin, V. P. / Sorokin, S. V. / Ankudinov, A. V. / Berkovits, V. L. / Ivanov, S. V. / Kop’ev, P. S. et al. | 2002
- 60
-
Transformation of interface states in silicon-on-insulator structures under annealing in hydrogen atmosphereAntonova, I. V. / Stano, I. / Nikolaev, D. V. / Naumova, O. V. / Popov, V. P. / Skuratov, V. A. et al. | 2002
- 65
-
Spontaneous spin polarization of electrons in quantum wiresShelykh, I. A. / Bagraev, N. T. / Ivanov, V. K. / Klyachkin, L. E. et al. | 2002
- 74
-
Light emission by semiconductor structure with quantum well and array of quantum dotsEvtikhiev, V. P. / Konstantinov, O. V. / Matveentsev, A. V. / Romanov, A. E. et al. | 2002
- 81
-
Changes in the density of nonradiative recombination centers in GaAs/AlGaAs quantum-well structures as a result of treatment in CF4 plasmaShamirzaev, T. S. / Sokolov, A. L. / Zhuravlev, K. S. / Kobitski, A. Yu. / Wagner, H. P. / Zahn, D. R. T. et al. | 2002
- 85
-
Charge effects controlling the current hysteresis and negative differential resistance in periodic nanodimensional structures Si/CaF2Berashevich, Yu. A. / Danilyuk, A. L. / Kholod, A. N. / Borisenko, V. E. et al. | 2002
- 91
-
Spin relaxation in asymmetrical heterostructuresAverkiev, N. S. / Golub, L. E. / Willander, M. et al. | 2002
- 98
-
A mechanism of oxygen-induced passivation of porous silicon in the HF: HCl: C2H5OH solutionsGavrilov, S. A. / Belogorokhov, A. I. / Belogorokhova, L. I. et al. | 2002
- 102
-
Formation of silicon nanocrystals with preferred (100) orientation in amorphous Si:H films grown on glass substrates and exposed to nanosecond pulses of ultraviolet radiationEfremov, M. D. / Bolotov, V. V. / Volodin, V. A. / Kochubei, S. A. / Kretinin, A. V. et al. | 2002
- 110
-
Density of states in amorphous carbon and its modification by annealingIvanov-Omskii, V. I. / Tagliaferro, A. / Fanchini, G. / Yastrebov, S. G. et al. | 2002
- 116
-
A graded-gap detector of ionizing radiationPožela, J. / Požeal, K. / Šilėnas, A. / Jasutis, V. / Dapkus, L. / Kinduris, A. / Jucienė, V. et al. | 2002
- 121
-
Effect of dynamic aging of dislocations on the deformation behavior of extrinsic semiconductorsPetukhov, B. V. et al. | 2002
- 126
-
Electrical properties of silicon layers implanted with ytterbium ionsAleksandrov, O. V. / Zakhar’in, A. O. / Sobolev, N. A. et al. | 2002
- 136
-
“LO-Phonon” correlation between picosecond superluminescence spectrum and special features of absorption spectrum in GaAs for non-Fermi distribution of carriers induced by picosecond light pulseAgeeva, N. N. / Bronevoi, I. L. / Krivonosov, A. N. / Kumekov, S. E. / Stegantsov, S. V. et al. | 2002
- 148
-
Optical properties of fluorite in a wide energy rangeSobolev, V. V. / Kalugin, A. I. et al. | 2002
- 153
-
Influence of laser pump density on the characteristic time constant and the intermediate-field electromodulation E 0 component of the photoreflectance signalKuz’menko, R. V. / Ganzha, A. V. / Domashevskaya, É. P. / Hildenbrandt, S. / Schreiber, J. et al. | 2002
- 160
-
Annealing of deep boron centers in silicon carbideBallandovich, V. S. / Mokhov, E. N. et al. | 2002
- 167
-
Edge-photoluminescence concentration dependence in semi-insulating undoped GaAsKovalenko, V. F. / Litvinova, M. B. / Shutov, S. V. et al. | 2002
- 171
-
Electrically active centers in Si:Er light-emitting layers grown by sublimation molecular-beam epitaxyShmagin, V. B. / Andreev, B. A. / Antonov, A. V. / Krasil’nik, Z. F. / Kuznetsov, V. P. / Kuznetsov, O. A. / Uskova, E. A. / Ammerlaan, C. A. J. / Pensl, G. et al. | 2002
- 176
-
Optical absorption in (Pb0.78Sn0.22)1−X InXTe (X=0.001–0.005)Veis, A. N. et al. | 2002
- 180
-
Distribution of charge carriers in dissipative semiconductor structuresKamilov, I. K. / Stepurenko, A. A. / Kovalev, A. S. et al. | 2002
- 185
-
The effect of charge-carrier drift in the built-in quasi-electric field on the emission spectrum for graded-gap semiconductorsKovalenko, V. F. / Mironchenko, A. Yu. / Shutov, S. V. et al. | 2002
- 191
-
Role of surface segregation in formation of abrupt interfaces in Si/Si1−x Gex heterocompositions grown by molecular-beam epitaxy with combined sourcesOrlov, L. K. / Ivina, N. L. et al. | 2002
- 197
-
Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structuresDmitriev, S. G. / Markin, Yu. V. et al. | 2002
- 203
-
Photoluminescence of anti-modulation-doped GaAs/AlGaAs single quantum well structures exposed to hydrogen plasmaBumai, Yu. A. / Gobsch, G. / Goldhahn, R. / Stein, N. / Golombek, A. / Nakov, V. / Cheng, T. S. et al. | 2002
- 208
-
Energy spectrum and optical properties of the quantum dot-impurity center complexKrevchik, V. D. / Levashov, A. V. et al. | 2002
- 213
-
Injection excitation of luminescence in multilayer nc-Si/insulator structuresBerashevich, Yu. A. / Kamenev, B. V. / Borisenko, V. E. et al. | 2002
- 219
-
Temperature dependence of the optical energy gap for the CdSxSe1−x quantum dotsKunets, V. P. / Kulish, N. R. / Kunets, Vas. P. / Lisitsa, M. P. / Malysh, N. I. et al. | 2002
- 224
-
The dicke superradiation in quantum heterostructures under optical pumpingKlimovskaya, A. I. / Gule, E. G. / Driga, Yu. A. et al. | 2002
- 226
-
Electroluminescence from AlGaAs/GaAs quantum-cascade structures in the terahertz rangeZinov’ev, N. N. / Andrianov, A. V. / Nekrasov, V. Yu. / Belyakov, L. V. / Sreseli, O. M. / Hill, G. / Chamberlain, J. M. et al. | 2002
- 230
-
Effect of thermal treatment on structure and properties of a-Si:H films obtained by cyclic depositionAfanas’ev, V. P. / Gudovskikh, A. S. / Nevedomskii, V. N. / Sazanov, A. P. / Sitnikova, A. A. / Trapeznikova, I. N. / Terukov, E. I. et al. | 2002
- 235
-
Optimal doping of the drift region in unipolar diodes and transistorsKyuregyan, A. S. et al. | 2002
- 239
-
Clustering of defects and impurities in hydrogenated single-crystal siliconAbdulin, Kh. A. / Gorelkinskii, Yu. V. / Mukashev, B. N. / Tokmoldin, S. Zh. et al. | 2002
- 250
-
Rapid thermal annealing of gallium arsenide implanted with sulfur ionsArdyshev, V. M. / Ardyshev, M. V. et al. | 2002
- 254
-
The preexponential factor in Mott’s law for variable-range-hopping conduction in lightly compensated p-Hg0.8Cd0.2Te crystalsBogoboyashchii, V. V. et al. | 2002
- 259
-
E 0 photoreflectance spectra of GaAs: Identification of the features related to impurity transitionsKusmenko, R. V. / Domashevskaya, É. P. et al. | 2002
- 263
-
Temperature dependence of thermoelectric power in n-InSb in a transverse quantizing magnetic fieldGadzhialiev, M. M. et al. | 2002
- 265
-
Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N filmsGeorgobiani, A. N. / Gruzintsev, A. N. / Volkov, V. T. / Vorob’ev, M. O. et al. | 2002
- 270
-
Effective exciton mass in III-V semiconductorsAverkiev, N. S. / Romanov, K. S. et al. | 2002
- 273
-
Special features of charge transport in PbGa2Se4 crystalsTagiev, B. G. / Musaeva, N. N. / Dzhabbarov, R. B. et al. | 2002
- 276
-
Efficiency of the intercalation of aluminum atoms under a monolayer and submonolayer two-dimensional graphite film on a metalGall, N. R. / Rut’kov, E. V. / Tontegode, A. Ya. et al. | 2002
- 282
-
Simulation of hydrogen penetration into p-type silicon under wet chemical etchingFeklisova, O. V. / Yakimov, E. B. / Yarykin, N. A. et al. | 2002
- 286
-
Internal ionization energy in II-VI compoundsKomashchenko, A. V. / Komashchenko, V. N. / Kolezhuk, K. V. / Sheremetova, G. I. / Fursenko, V. D. / Bobrenko, Yu. N. et al. | 2002
- 290
-
Influence of the misfit-dislocation screw component on the formation of threading dislocations in semiconductor heterostructuresTrukhanov, E. M. / Kolesnikov, A. V. / Vasilenko, A. P. / Gutakovskii, A. K. et al. | 2002
- 298
-
Optical Properties of Ultradisperse CdSe~xTe~1~-~x (0Bodnar, I. V. / Gurin, V. S. / Molochko, A. P. / Solovei, N. P. / Prokoshin, P. V. / Yumashev, K. V. et al. | 2002
- 298
-
Optical properties of ultradisperse CdSexTe1−x (0≤x≤1) particles in a silicate glass matrixBodnar, I. V. / Gurin, V. S. / Molochko, A. P. / Solovei, N. P. / Prokoshin, P. V. / Yumashev, K. V. et al. | 2002
- 307
-
Soliton shape stabilization in a superlattice with next-to-nearest neighbor spectrum in a field of a nonlinear waveKryuchkov, S. V. / Fedorov, É. G. et al. | 2002
- 311
-
Resonance transitions between split levels in three-barrier nanostructures and the prospects of using these structures in devices operating in the submillimeter-wave bandGolant, E. I. / Pashkovskii, A. B. et al. | 2002
- 319
-
Microwave photoconductivity in nanocrystalline porous titanium oxide subjected to pulsed laser excitationKonstantinova, E. A. / Timoshenko, V. Yu. / Kashkarov, P. K. / Kytin, V. G. / Gaivoronskii, V. Ya. / Porteanu, H. / Dittrich, Th. / Koch, F. et al. | 2002
- 325
-
Special features of recombination of nonequilibrium charge carriers in porous silicon with different nanostructure morphologiesLisachenko, M. G. / Konstantinov, E. A. / Timoshenko, V. Yu. / Kashkarov, P. K. et al. | 2002
- 330
-
Changes in properties of a 〈porous silicon〉/silicon system during gradual etching off of the porous silicon layerVenger, E. F. / Gorbach, T. Ya. / Kirillova, S. I. / Primachenko, V. E. / Chernobai, V. A. et al. | 2002
- 336
-
Carrier transport in porous siliconAverkiev, N. S. / Kazakova, L. P. / Smirnova, N. N. et al. | 2002
- 340
-
Solar cells based on CuIn1−x GaxSe2 films obtained by pulsed laser evaporationGremenok, V. F. / Bodnar’, I. V. / Rud’, V. Yu. / Rud’, Yu. V. / Schock, H. -W. et al. | 2002
- 344
-
Analysis of threshold current density and optical gain in InGaAsP quantum well lasersPikhtin, N. A. / Sliptchenko, S. O. / Sokolova, Z. N. / Tarasov, I. S. et al. | 2002
- 354
-
The use of SiC triode structures as detectors of nuclear particlesStrokan, N. B. / Ivanov, A. M. / Savkina, N. S. / Davydov, D. V. / Bogdanova, E. V. / Lebedev, A. A. et al. | 2002
- 358
-
Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditionsAleksandrov, O. V. / Zakhar’in, A. O. / Sobolev, N. A. / Nikolaev, Yu. A. et al. | 2002
- 362
-
Igor’ Georgievich Neizvestny $$\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} $$ (on his 70th birthday)| 2002
- 363
-
Changes in the state of phosphorus atoms in the silicon lattice as a result of interaction with radiation defectsBolotov, V. V. / Kamaev, G. N. / Smirnov, L. S. et al. | 2002
- 367
-
Ultrasonically stimulated low-temperature redistribution of impurities in siliconOstrovskii, I. V. / Nadtochii, A. B. / Podolyan, A. A. et al. | 2002
- 370
-
Simulation of low-temperature arsenic diffusion from a heavily doped silicon layerAleksandrov, O. V. et al. | 2002
- 375
-
Generalized character of the dielectric response of CdTe crystals grown from the meltKlimenko, I. A. / Migal’, V. P. et al. | 2002
- 379
-
Effect of the radial electric field on absorption in a quantized spherical layerArutyunyan, V. A. et al. | 2002
- 382
-
Photoelectric C-V profiling of majority charge carriers and effective lifetimes of minority charge carriers in gettered GaAs wafersAndrievskii, V. F. / Gorelenok, A. T. / Zagorel’skaya, N. A. / Kamanin, A. V. / Shmidt, N. M. et al. | 2002
- 385
-
Effective electron mass in heavily doped GaAs in the ordering of impurity complexesBogdanova, V. A. / Davletkil’deev, N. A. / Semikolenova, N. A. / Sidorov, E. N. et al. | 2002
- 390
-
Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyteShevchenko, O. Yu. / Radantsev, V. F. / Yafyasov, A. M. / Bozhevol’nov, V. B. / Ivankiv, I. M. / Perepelkin, A. D. et al. | 2002
- 394
-
Energy transfer of Ce3+ → Eu2+ in the CaGa2S4 compoundDzhabbarov, R. B. et al. | 2002
- 394
-
Energy transfer of Ce3+ to Eu2+ in the CaGa2S4 compoundDzhabbarov, R.B. et al. | 2002
- 398
-
Features of optical properties of AlxGa1−x N solid solutionsDeibuk, V. G. / Voznyi, A. V. / Sletov, M. M. et al. | 2002
- 404
-
Increase in quantum efficiency of IR emission in elastically strained narrow-gap semiconductorsGasan-zade, S. G. / Strikha, M. V. / Staryi, S. V. / Shepel’skii, G. A. / Boiko, V. A. et al. | 2002
- 410
-
Analysis and refinement of mathematical tools for modified time-of-flight methodVikhrov, S. P. / Vishnyakov, N. V. / Maslov, A. A. / Mishustin, V. G. et al. | 2002
- 414
-
Causes of variation in the static current-voltage characteristics of the structures with the Me/n-n +-GaAs Schottky barrier on hydrogenationTorkhov, N. A. et al. | 2002
- 420
-
Field effect in a system consisting of electrolyte and (TlBiSe2)1−x -(TlBiS2)x solid solutionShevchenko, O. Yu. / Yafyasov, A. M. / Bozhevol’nov, V. B. / Ivankiv, I. M. / Perepelkin, A. D. et al. | 2002
- 424
-
Effect of surface on the excitonic characteristics of semiconductorsLitovchenko, V. G. / Dmitruk, N. L. / Korbutyak, D. V. / Sarikov, A. V. et al. | 2002
- 430
-
Nature of the edge electroluminescence peak in the Si:(Er,O) diode breakdown modeEmel’yanov, A. M. / Nikolaev, Yu. A. / Sobolev, N. A. et al. | 2002
- 434
-
Control of the interband and intersubband transition energy in quantum wells using localized isoelectronic perturbationsDurinyan, K. / Zatikyan, A. / Petrosyan, S. et al. | 2002
- 439
-
Quantized conductance in silicon quantum wiresBagraev, N. T. / Buravlev, A. D. / Klyachkin, L. E. / Malyarenko, A. M. / Gehlhoff, W. / Ivanov, V. K. / Shelykh, I. A. et al. | 2002
- 461
-
Exciton Recombination in delta-Doped Type-II GaAs/AlAs SuperlatticesZhuravlev, K. S. / Sulaimanov, A. K. / Gilinskii, A. M. / Braginskii, L. S. / Toropov, A. I. / Bakarov, A. K. et al. | 2002
- 461
-
Exciton recombination in δ-doped type-II GaAs/AlAs superlatticesZhuravlev, K. S. / Sulaimanov, A. K. / Gilinskii, A. M. / Braginskii, L. S. / Toropov, A. I. / Bakarov, A. K. et al. | 2002
- 466
-
The effect of adsorption on the electrical properties of structures based on oxidized porous siliconBilenko, D. I. / Belobrovaya, O. Ya. / Zharkova, É. A. / Mysenko, I. B. / Khasina, E. I. et al. | 2002
- 472
-
Special features of electron drift in submicrometer GaAs structuresGergel’, V. A. / Kul’kova, E. Yu. / Mokerov, V. G. / Timofeev, M. V. / Khrenov, G. Yu. et al. | 2002
- 476
-
Long-term variation of electrical and photoelectric characteristics of Pd-p-InP diode structuresSlobodchikov, S. V. / Salikhov, Kh. M. / Russu, E. V. et al. | 2002
- 481
-
Nonlinear photoluminescence of graded-gap AlxGa1−x As solid solutionsKovalenko, V. F. / Mironchenko, A. Yu. / Shutov, S. V. et al. | 2002
- 487
-
Features of determination of shallow-level impurity concentrations in semiconductors from analysis of the exciton luminescence spectrumGlinchuk, K. D. / Prokhorovich, A. V. et al. | 2002
- 493
-
Deep level spectra of MBE-grown ZnTe:Cr2+ layersSadofyev, Yu. G. / Korshkov, M. V. et al. | 2002
- 496
-
Band structure of Mg2Si and Mg2Ge semiconducting compounds with a strained crystal latticeKrivosheeva, A. V. / Kholod, A. N. / Shaposhnikov, V. L. / Krivosheev, A. E. / Borisenko, V. E. et al. | 2002
- 501
-
Localized states in Hg3In2Te6: Cr compoundsGorlei, P. N. / Grushka, O. G. / Frasunyak, V. M. et al. | 2002
- 505
-
Control of Charge Transport Mode in the Schottky Barrier by delta-Doping: Calculation and Experiment for Al/GaAsShashkin, V. I. / Murel, A. V. / Daniltsev, V. M. / Khrykin, O. I. et al. | 2002
- 505
-
Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAsShashkin, V. I. / Murel, A. V. / Daniltsev, V. M. / Khrykin, O. I. et al. | 2002
- 511
-
Electrons, holes, and excitons in a superlattice composed of cylindrical quantum dots with extremely weak coupling between quasiparticles in neighboring layers of quantum dotsTkach, N. V. / Makhanets, A. M. / Zegryae, G. G. et al. | 2002
- 519
-
Evaluation of mobility gaps and density of localized hole states in p-Ge/Ge1−x Six heterostructures in the quantum Hall effect modeArapov, Yu. G. / Kuznetsov, O. A. / Neverov, V. N. / Kharus, G. I. / Shelushinina, N. G. / Yakunin, M. V. et al. | 2002
- 527
-
Miniband spectra of (AlAs)M(GaAs)N(111) superlatticesKaravaev, G. F. / Chernyshov, V. N. / Egunov, R. M. et al. | 2002
- 535
-
Room temperature λ=1.3 µm photoluminescence from InGaAs quantum dots on (001) Si substrateBurbaev, T. M. / Kazakov, I. P. / Kurbatov, V. A. / Rzaev, M. M. / Tsvetkov, V. A. / Tsekhosh, V. I. et al. | 2002
- 535
-
Room Temperature Lambda = 1.3 mum Photoluminescence from InGaAs Quantum Dots on (001) Si SubstrateBurbaev, T. M. / Kazakov, I. P. / Kurbatov, V. A. / Rzaev, M. M. / Tsvetkov, V. A. / Tsekhosh, V. I. et al. | 2002
- 539
-
Resonance tunneling and nonlinear current in heterobarriers with complex law of carrier dispersionKim, C. S. / Satanin, A. M. / Shtenberg, V. B. et al. | 2002
- 546
-
Multichannel carrier scattering at quantum-well heterostructuresGaliev, V. I. / Kruglov, A. N. / Polupanov, A. F. / Goldys, E. M. / Tansley, T. L. et al. | 2002
- 552
-
Effect of hydrogen on the properties of Pd/GaAs/InGaAs diode structures with quantum wellsKarpovich, I. A. / Tikhov, S. V. / Shobolov, E. L. / Zvonkov, B. N. et al. | 2002
- 558
-
The interrelation of surface relief of porous silicon with specific features of Raman spectraBulakh, B. M. / Jumayev, B. R. / Korsunska, N. O. / Litvin, O. S. / Torchynska, T. V. / Khomenkova, L. Yu. / Yukhymchuk, V. O. et al. | 2002
- 564
-
Formation of macropore nucleation centers in silicon by ion implantationAstrova, E. V. / Vasunkina, T. N. et al. | 2002
- 568
-
X-ray-emission study of the structure of Si:H layers formed by low-energy hydrogen-ion implantationGalakhov, V. R. / Antonova, I. V. / Shamin, S. N. / Aksenova, V. I. / Obodnikov, V. I. / Gutakovskii, A. K. / Popov, V. P. et al. | 2002
- 574
-
Preparation and study of carbidized porous siliconSreseli, O. M. / Goryachev, D. N. / Osipov, V. Yu. / Belyakov, L. V. / Vul’, S. P. / Serenkov, I. T. / Sakharov, V. I. / Vul’, A. Ya. et al. | 2002
- 581
-
Shallow p-n junctions formed in silicon using pulsed photon annealingŞişianu, S. T. / Şişianu, T. S. / Railean, S. K. et al. | 2002
- 588
-
Simulation of avalanche multiplication of electrons in photodetectors with blocked hopping conductionSinitsa, S. P. et al. | 2002
- 592
-
Spectral line width of the current-tunable lasers on the base of InAsSb/InAsSbP at low temperatureImenkov, A. N. / Kolchanova, N. M. / Kubat, P. / Tsivish, S. / Yakovlev, Yu. P. et al. | 2002
- 599
-
Generation of microwave oscillations in a no-base diodeDarznek, S. A. / Lyubutin, S. K. / Rukin, S. N. / Slovikovskii, B. G. et al. | 2002
- 605
-
Formation of selenium-containing complexes in siliconTaskin, A. A. / Tishkovskii, E. G. et al. | 2002
- 615
-
Growth of diamond films on crystalline silicon by hot-filament chemical vapor depositionBaidakova, M. V. / Vul’, A. Ya. / Golubev, V. G. / Grudinkin, S. A. / Melekhin, V. G. / Feoktistov, N. A. / Krüger, A. et al. | 2002
- 621
-
Local vibrational modes of the oxygen-vacancy complex in germaniumLitvinov, V. V. / Murin, L. I. / Lindstrom, J. L. / Markevich, V. P. / Petukh, A. N. et al. | 2002
- 625
-
Luminescent Si-Ge solid solution layers ER-doped in molecular-beam epitaxyShengurov, V. G. / Svetlov, S. P. / Chalkov, V. Yu. / Andreev, B. A. / Krasil’nik, Z. F. / Ber, B. Ya. / Drozdov, Yu. N. / Yablonsky, A. N. et al. | 2002
- 629
-
Migration of laser-induced point defects in IV–VI compoundsPlyatsko, S. V. et al. | 2002
- 636
-
Physical properties of semi-insulating CdTe:Cl single crystals grown from the vapor phasePopovich, V. D. / Grigorovich, G. M. / Peleshchak, P. M. / Tkachuk, P. N. et al. | 2002
- 641
-
Low-temperature time-resolved photoluminescence in InGaN/GaN quantum wellsAndrianov, A. V. / Nekrasov, V. Yu. / Shmidt, N. M. / Zavarin, E. E. / Usikov, A. S. / Zinov’ev, N. N. / Tkachuk, M. N. et al. | 2002
- 647
-
Silicon nanocrystal formation upon annealing of SiO2 layers implanted with Si ionsKachurin, G. A. / Yanovskaya, S. G. / Volodin, V. A. / Kesler, V. G. / Leier, A. F. / Ruault, M. -O. et al. | 2002
- 652
-
Role of silicon vacancies in formation of Schottky barriers at Ag and Au contacts to 3C-and 6H-SiCDavydov, S. Yu. / Lebedev, A. A. / Posrednik, O. V. / Tairov, Yu. M. et al. | 2002
- 655
-
Measurements of deep trap concentration in diodes with a high Schottky barrier by deep-level transient spectroscopyAgafonov, E. N. / Georgobiani, A. N. / Lepnev, L. S. et al. | 2002
- 659
-
Simulation of the energy spectrum of surface states in an MIS structure taking current leakage through the insulator into accountBerman, L. S. et al. | 2002
- 663
-
Mixed vibrational modes of PbTe nanocrystallitesBelogorokhov, A. I. / Belogorokhova, L. I. / Khokhlov, D. R. / Lemeshko, S. V. et al. | 2002
- 670
-
Electron states in (AlAs)M(AlxGa1−x As)N superlatticesKaravaev, G. F. / Chernyshov, V. N. / Egunov, R. M. et al. | 2002
- 674
-
Electron Mobility in AlGaAs/GaAs/AlGaAs Quantum WellMokerov, V. G. / Galiev, G. B. / Pozela, J. / Pozela, K. / Juciene, V. et al. | 2002
- 674
-
Electron mobility in a AlGaAs/GaAs/AlGaAs quantum wellMokerov, V. G. / Galiev, G. B. / Pozela, J. / Pozela, K. / Juciene, V. et al. | 2002
- 679
-
Resonance transfer of charge carriers in Si/CaF2 periodic nanostructures via trap states in insulator layersBerashevich, Yu. A. / Danilyuk, A. L. / Borisenko, V. E. et al. | 2002
- 685
-
Inversion of the electron population in subbands of dimensional quantization with longitudinal transport in tunnel-coupled quantum wellsAleshkin, V. Ya. / Dubinov, A. A. et al. | 2002
- 691
-
Photoconductivity of nanostructured hydrogenated silicon filmsGolikova, O. A. et al. | 2002
- 695
-
Vibratonal spectroscopy of a-C:H(Co)Zvonareva, T. K. / Ivanova, E. I. / Frolova, G. S. / Lebedev, V. M. / Ivanov-Omskii, V. I. et al. | 2002
- 701
-
Spontaneous and stimulated emission from magnetron-deposited ZnO-SiO2-Si thin-film nanocavitiesGruzintsev, A. N. / Volkov, V. T. / Barthou, C. / Benalloul, P. et al. | 2002
- 706
-
Photoelectric properties of p +-n junctions based on 4H-SiC ion-implanted with aluminumViolina, G. N. / Kalinina, E. V. / Kholujanov, G. F. / Onushkin, G. A. / Kossov, V. G. / Yafaev, R. R. / Hallén, A. / Konstantinov, A. O. et al. | 2002
- 710
-
Silicon carbide detectors of high-energy particlesViolina, G. N. / Kalinina, E. V. / Kholujanov, G. F. / Kossov, V. G. / Yafaev, R. R. / Hallén, A. / Konstantinov, A. O. et al. | 2002
- 714
-
Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 mumGordeev, N. Y. / Karachinsky, L. Y. / Novikov, I. I. / Lyutetsky, A. V. / Pikhtin, N. A. / Fetisova, N. V. / Tarasov, I. S. / Kop ev, P. S. et al. | 2002
- 714
-
Waveguide InGaAsP/InP photodetectors for low-power autocorrelation measurements at 1.55 µmGordeev, N. Yu. / Karachinsky, L. Ya. / Novikov, I. I. / Lyutetsky, A. V. / Pikhtin, N. A. / Fetisova, N. V. / Tarasov, I. S. / Kop’ev, P. S. et al. | 2002
- 717
-
Wannier-Stark localization in the natural superlattice of silicon carbide polytypesSankin, V. I. et al. | 2002
- 740
-
Effect of long-term annealing on accumulation of impuritiesBykovskii, Yu. A. / Voronkova, G. M. / Grigor’ev, V. V. / Zuev, V. V. / Zuev, A. V. / Kiryukhin, A. D. / Chmyrev, V. I. / Shcherbakov, S. A. et al. | 2002
- 743
-
Analysis of the size-distribution function of metallic nanoclusters in a hydrogenated amorphous carbon hostIvanov-Omskii, V. I. / Lodygin, A. B. / Yastrebov, S. G. et al. | 2002
- 747
-
Modification of the electrical and photoelectric properties of Mg0.15Cd0.85Te solid solutions as a result of pulsed laser irradiation within the transparency rangeBaidullaeva, A. / Venger, E. F. / Vlasenko, A. I. / Lomovtsev, A. V. / Mozol’, P. E. et al. | 2002
- 751
-
Titanium, vanadium, and nickel impurities in 3C-SiC: Electronic structure and lattice relaxation effectsMedvedeva, N. I. / Yuryeva, É. I. / Ivanovskii, A. L. et al. | 2002
- 755
-
Parameters of excitons in monoclinic zinc diarsenideKozlov, A. I. / Kozlova, S. G. / Matveev, A. V. / Sobolev, V. V. et al. | 2002
- 758
-
Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxySavkina, N. S. / Ratnikov, V. V. / Rogachev, A. Yu. / Shuman, V. B. / Tregubova, A. S. / Volkova, A. A. et al. | 2002
- 763
-
The effect of composition on the properties and defect structure of the CdS-Ga2S3 solid solutionVenger, E. F. / Ermolovich, I. B. / Milenin, V. V. / Papusha, V. P. et al. | 2002
- 772
-
Microwave magnetoresistance of compensated p-Ge:Ga in the region of the insulator-metal phase transitionVeinger, A. I. / Zabrodskii, A. G. / Tisnek, T. V. et al. | 2002
- 782
-
Thermally stimulated currents in MnIn2S4 single crystalsNiftiev, N. N. et al. | 2002
- 784
-
E 0 photoreflectance spectra of semiconductor structures with a high density of interface statesKuz’menko, R. V. / Domashevskaya, É. P. et al. | 2002
- 789
-
Switching effect in Si-CdS heterojunctions synthesized in highly nonequilibrium conditionsBelyaev, A. P. / Rubets, V. P. et al. | 2002
- 793
-
Special features of the magnetodiode effect in multivalley semiconductors at low temperaturesAbramov, A. A. / Gorbatyi, I. N. et al. | 2002
- 800
-
Behavior of charge in a buried insulator of silicon-on-insulator structures subjected to electric fieldsNikolaev, D. V. / Antonova, I. V. / Naumova, O. V. / Popov, V. P. / Smagulova, S. A. et al. | 2002
- 805
-
Study of the effect of electron irradiation on a GaSe-SiO2 structure by spectroscopic methodsIbragimov, T. D. / Dzhafarova, E. A. / Safarov, Z. B. et al. | 2002
- 808
-
Calculation of the low-field mobility of quasi-two-dimensional electrons in a GaAs/Al0.36Ga0.64As superlattice at temperatures in the region of 77 KBorisenko, S. I. et al. | 2002
- 816
-
GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronicsSolov’ev, V. A. / Toropov, A. A. / Meltser, B. Ya. / Terent’ev, Ya. A. / Kyutt, R. N. / Sitnikova, A. A. / Semenov, A. N. / Ivanov, S. V. / Motlan / Goldys, E. M. et al. | 2002
- 821
-
Inhomogeneous broadening of the ground electron level in a quantum dot arrayBelyavskii, V. I. / Shevtsov, S. V. et al. | 2002
- 828
-
Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductorsAidaraliev, M. / Zotova, N. V. / Karandashev, S. A. / Matveev, B. A. / Remennyi, M. A. / Stus’, N. M. / Talalakin, G. N. et al. | 2002
- 832
-
Amorphization of the surface region in epitaxial n-GaAs treated with atomic hydrogenTorkhov, N. A. / Ivonin, I. V. / Chernikov, E. V. et al. | 2002
- 837
-
Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAsPreobrazhenskii, V. V. / Putyato, M. A. / Semyagin, B. R. et al. | 2002
- 841
-
Threshold of inelastic strain formation in Si and GaAs surface layers under multiple pulsed laser irradiationVintsents, S. V. / Zoteev, A. V. / Plotnikov, G. S. et al. | 2002
- 845
-
Dissociation energies of a CiCs complex and the A center in siliconBoyarkina, N. I. / Smagulova, S. A. / Artem’ev, A. A. et al. | 2002
- 848
-
Initial stages of growth of diamond island films on crystalline siliconFeoktistov, N. A. / Afanas’ev, V. V. / Golubev, V. G. / Grudinkin, S. A. / Kukushkin, S. A. / Melekhin, V. G. et al. | 2002
- 852
-
Local structure of zinc impurity centers in lead chalcogenides and Pb1−x SnxTe solid solutionsNemov, S. A. / Seregin, N. P. et al. | 2002
- 855
-
Influence of tellurium impurity on the Properties of Ga1−X InXAsYSb1−Y (X>0.22) solid solutionsVoronina, T. I. / Lagunova, T. S. / Kunitsyna, E. V. / Parkhomenko, Ya. A. / Sipovskaya, M. A. / Yakovlev, Yu. P. et al. | 2002
- 863
-
Optical properties of bulk and epitaxial unordered GaxIn1−x P semiconductor alloysVyklyuk, Ya. I. / Deibuk, V. G. / Zolotarev, S. V. et al. | 2002
- 863
-
Optical Properties of Bulk and Epitaxial Unordered Ga~xIn~1~-~x Semiconductor AlloysVyklyuk, Y. I. / Deibuk, V. G. / Zolotarev, S. V. et al. | 2002
- 869
-
Electrical and thermoelectric properties of p-Ag2TeAliev, F. F. / Kerimova, E. M. / Aliev, S. A. et al. | 2002
- 874
-
Photoconductivity of coarse-grained CdTe polycrystalsMedvedev, S. A. / Klevkov, Yu. V. / Kolosov, S. A. / Krivobok, V. S. / Plotnikov, A. F. et al. | 2002
- 878
-
Time-resolved photoluminescence of polycrystalline GaN layers on metal substratesAndrianov, A. V. / Yamada, K. / Tampo, H. / Asahi, H. / Nekrasov, V. Yu. / Petrovskaya, Z. N. / Sreseli, O. M. / Zinov’ev, N. N. et al. | 2002
- 883
-
Low-threshold defect formation and modification of Ge surface layer under elastic and elastoplastic pulsed laser effectsVintsents, S. V. / Zaitsev, V. B. / Zoteev, A. V. / Plotnikov, G. S. / Rodionov, A. I. / Chervyakov, A. V. et al. | 2002
- 889
-
Electron tunneling through a double barrier in a reverse-biased metal-oxide-silicon structureKareva, G. G. / Vexler, M. I. / Grekhov, I. V. / Shulekin, A. F. et al. | 2002
- 895
-
Structure of heterointerfaces and photoluminescence properties of GaAs/AlAs superlattices grown on (311)A and (311)B surfaces: Comparative analysisLyubas, G. A. / Ledentsov, N. N. / Litvinov, D. / Semyagin, B. R. / Soshnikov, I. P. / Ustinov, V. M. / Bolotov, V. V. / Gerthsen, D. et al. | 2002
- 899
-
Wavelength of emission from InGaAsN quantum wells as a function of composition of the quaternary compoundZhukov, A. E. / Kovsh, A. R. / Semenova, E. S. / Ustinov, V. M. / Wei, L. / Wang, J. -S. / Chi, J. Y. et al. | 2002
- 903
-
Two-dimensional p-n junction under equilibrium conditionsAchoyan, A. Sh. / Yesayan, A. É. / Kazaryan, É. M. / Petrosyan, S. G. et al. | 2002
- 908
-
Calculations of the charge-carrier mobility and the thermoelectric figure of merit for multiple-quantum-well structuresPshenai-Severin, D. A. / Ravich, Yu. I. et al. | 2002
- 916
-
Nonlinear response and nonlinear coherent generation in resonant-tunneling diode in a broad frequency rangeElesin, V. F. / Kateev, I. Yu. / Podlivaev, A. I. et al. | 2002
- 921
-
Anomalies of the fractional quantum hall effect in a wide ballistic wireKvon, Z. D. / Olshanetsky, E. B. / Plotnikov, A. E. / Toropov, A. I. / Portal, J. C. et al. | 2002
- 924
-
Special features of electrical conductivity in a parabolic quantum well in a magnetic fieldSinyavskii, E. P. / Khamidullin, R. A. et al. | 2002
- 929
-
Manifestation of A(+) centers in the luminescence of two-dimensional GaAs/AlGaAs structuresIvanov, Yu. L. / Agrinskaya, N. V. / Petrov, P. V. / Ustinov, V. M. / Tsyrlin, G. É. et al. | 2002
- 932
-
One-dimensional photonic crystal obtained by vertical anisotropic etching of siliconTolmachev, V. A. / Granitsyna, L. S. / Vlasova, E. N. / Volchek, B. Z. / Nashchekin, A. V. / Remenyuk, A. D. / Astrova, E. V. et al. | 2002
- 936
-
Gamma-irradiation-induced metastable states of undoped amorphous hydrogenated siliconAblova, M. S. / Kulikov, G. S. / Persheev, S. K. et al. | 2002
- 941
-
Fabrication and properties of amorphous hydrogenated boron carbide filmsAnan’ev, A. S. / Kon’kov, O. I. / Lebedev, V. M. / Novokhatski, A. N. / Terukov, E. I. / Trapeznikova, I. N. et al. | 2002
- 944
-
Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronicsAidaraliev, M. / Zotova, N. V. / Karandashev, S. A. / Matveev, B. A. / Remennyi, M. A. / Stus’, N. M. / Talalakin, G. N. / Shustov, V. V. / Kuznetsov, V. V. / Kognovitskaya, E. A. et al. | 2002
- 950
-
Viktor Il’ich Fistul’ (on his 75th birthday)| 2002
- 953
-
Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxyVilisova, M. D. / Kunitsyn, A. E. / Lavrent’eva, L. G. / Preobrazhenskii, V. V. / Putyato, M. A. / Semyagin, B. R. / Toropov, S. E. / Chaldyshev, V. V. et al. | 2002
- 958
-
Mechanism of copper diffusion over the Si(110) surfaceDolbak, A. E. / Zhachuk, R. A. / Olshanetsky, B. Z. et al. | 2002
- 962
-
Internal friction and effective shear modulus of single-crystal silicon in early stages of oxygen precipitationMotskin, V. V. / Oleinich-Lysyuck, A. V. / Raranskii, N. D. / Fodchuk, I. M. et al. | 2002
- 966
-
The temperature and concentration dependences of the charge carrier mobility in PbTe-MnTe solid solutionsRogacheva, E. I. / Krivul’kin, I. M. et al. | 2002
- 971
-
Electron-plasmon interaction in acceptor-doped bismuth crystalsStepanov, N. P. / Grabov, V. M. et al. | 2002
- 975
-
Study of Zinc Impurity Atoms in GaP, GaAs, and GaSb ^6^7Ga(^6^7Zn) and ^6^7Cu(^6^7Zn) by Emission Mossbauer SpectroscopySeregin, N. P. / Nemov, S. A. / Irkaev, S. M. et al. | 2002
- 975
-
Study of zinc impurity atoms in GaP, GaAs, and GaSb 67Ga(67Zn) and 67Cu(67Zn) by emission Mössbauer spectroscopySeregin, N. P. / Nemov, S. A. / Irkaev, S. M. et al. | 2002
- 977
-
Cathodoluminescence of ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by chemical vapor depositionChukichev, M. V. / Ataev, B. M. / Mamedov, V. V. / Alivov, Ya. I. / Khodos, I. I. et al. | 2002
- 977
-
Cathodoluminescence of ZnO/GaN/alpha-Al~2O~3 Heteroepitaxial Structures Grown by Chemical Vapor DepositionChukichev, M. V. / Ataev, B. M. / Mamedov, V. V. / Alivov, Y. I. / Khodos, I. I. et al. | 2002
- 981
-
Experimental observation of splitting of the light and heavy hole bands in elastically strained GaAsNEgorov, A. Yu. / Semenova, E. S. / Ustinov, V. M. / Hong, Y. G. / Tu, C. et al. | 2002
- 985
-
Variations in the properties of an implantation-synthesized SixNy-Si heterosystem as a result of thermal and ion-beam treatmentsKarzanov, V. V. / Markov, K. A. / Sdobnyakov, V. V. / Demidov, E. S. et al. | 2002
- 990
-
Optical storage on the basis of an n-InSb-SiO2-p-Si heterostructureNikol’skii, Yu. A. et al. | 2002
- 993
-
Field-dependent photosensitivity of In-SiO2-Cd0.28Hg0.72Te metal-insulator-semiconductor structures with an opaque field electrodeVasil’ev, V. V. / Kravchenko, A. F. / Mashukov, Yu. P. et al. | 2002
- 997
-
Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructuresVolovik, B. V. / Kryzhanovskaya, N. V. / Sizov, D. S. / Kovsh, A. R. / Tsatsul’nikov, A. F. / Chi, J. Y. / Wang, J. S. / Wei, L. / Ustinov, V. M. et al. | 2002
- 1001
-
Charge carrier transport through the contact of metal with a superconducting semiconductorKuznetsov, G. V. et al. | 2002
- 1008
-
Adsorption and transformation of C60 molecules at the (100) Si surfaceGall, N. R. / Rut’kov, E. V. / Tontegode, A. Ya. et al. | 2002
- 1013
-
Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructuresSobolev, M. M. / Ustinov, V. M. / Zhukov, A. E. / Musikhin, Yu. G. / Ledentsov, N. N. et al. | 2002
- 1020
-
The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrixSizov, D. S. / Maksimov, M. V. / Tsatsul’nikov, A. F. / Cherkashin, N. A. / Kryzhanovskaya, N. V. / Zhukov, A. B. / Maleev, N. A. / Mikhrin, S. S. / Vasil’ev, A. P. / Selin, R. et al. | 2002
- 1027
-
Photoluminescent and electronic properties of nanocrystalline silicon doped with goldKaganovich, É. B. / Kizyak, I. M. / Kirillova, S. I. / Manoilov, É. G. / Primachenko, V. E. / Svechnikov, S. V. / Venger, E. F. et al. | 2002
- 1033
-
Strains and crystal lattice defects arising in macroporous silicon under oxidationAstrova, E. V. / Ratnikov, V. V. / Remenyuk, A. D. / Shul’pina, I. L. et al. | 2002
- 1043
-
Hysteresis of the photonic band gap in VO2 photonic crystal in the semiconductor-metal phase transitionGolubev, V. G. / Kurdyukov, D. A. / Pevtsov, A. B. / Sel’kin, A. V. / Shadrin, E. B. / Il’inskii, A. V. / Boeyink, R. et al. | 2002
- 1048
-
Photoelectric phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al solar cellsNikolaev, Yu. A. / Rud’, V. Yu. / Rud’, Yu. V. / Terukov, E. I. / Fuhs, W. / Froitzheim, A. et al. | 2002
- 1053
-
Analysis of high-frequency response and nonlinear coherent generation of resonance-tunneling diodes within a broad frequency range with account of electron-electron interactionElesin, V. F. / Kateev, I. Yu. / Podlivaev, A. I. et al. | 2002
- 1058
-
Study of the potential distribution in a forward-biased silicon diode using electrostatic force microscopyAnkudinov, A. V. / Titkov, A. N. / Laiho, R. / Kozlov, V. A. et al. | 2002
- 1065
-
MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contactBulaev, P. V. / Kapitonov, V. A. / Lutetskii, A. V. / Marmalyuk, A. A. / Nikitin, D. B. / Nikolaev, D. N. / Padalitsa, A. A. / Pikhtin, N. A. / Bondarev, A. D. / Zalevskii, I. D. et al. | 2002
- 1070
-
Éduard Mushegovich Kazaryan (on his 60th birthday)| 2002
- 1073
-
Thermodynamic stability of bulk and epitaxial Ge1−x Snx semiconductor alloysDeibuk, V. G. / Korolyuk, Yu. G. et al. | 2002
- 1077
-
The effect of the concentration of the majority charge carriers and irradiation intensity on the efficiency of radiation-defect production in n-Si crystalsPagava, T. A. / Basheleishvili, Z. V. et al. | 2002
- 1079
-
Dependence of the annealing kinetics of A centers and divacancies on temperature, particle energy, and irradiation dose for n-Si crystalsPagava, T. A. et al. | 2002
- 1083
-
Chalcogen dimers in siliconTaskin, A. A. et al. | 2002
- 1091
-
Chemical Bonding and Elastic Constants of Certain Ternary III-V Solid SolutionsDeibuk, V. G. / Viklyuk, Y. I. et al. | 2002