Lattice Instability in ZnSe:Ni Crystal (Englisch)
- Neue Suche nach: Gudkov, V. V.
- Neue Suche nach: Lonchakov, A. T.
- Neue Suche nach: Tkach, A. V.
- Neue Suche nach: Zhevstovskikh, I. V.
- Neue Suche nach: Sokolov, V. I.
- Neue Suche nach: Gruzdev, N. B.
- Neue Suche nach: Gudkov, V. V.
- Neue Suche nach: Lonchakov, A. T.
- Neue Suche nach: Tkach, A. V.
- Neue Suche nach: Zhevstovskikh, I. V.
- Neue Suche nach: Sokolov, V. I.
- Neue Suche nach: Gruzdev, N. B.
In:
JOURNAL OF ELECTRONIC MATERIALS
;
33
;
815-818
;
2004
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Lattice Instability in ZnSe:Ni Crystal
-
Beteiligte:Gudkov, V. V. ( Autor:in ) / Lonchakov, A. T. ( Autor:in ) / Tkach, A. V. ( Autor:in ) / Zhevstovskikh, I. V. ( Autor:in ) / Sokolov, V. I. ( Autor:in ) / Gruzdev, N. B. ( Autor:in )
-
Erschienen in:JOURNAL OF ELECTRONIC MATERIALS ; 33 ; 815-818
-
Verlag:
- Neue Suche nach: The Minerals, Metals and Materials Society
-
Erscheinungsdatum:01.01.2004
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Format / Umfang:4 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 621.381
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 621.381 -
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis – Band 33
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Dark currents in long wavelength infrared HgCdTe gated photodiodesNguyen, T. / Musca, C. A. / Dell, J. M. / Antoszewski, J. / Faraone, L. et al. | 2004
- 630
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HgCdTe electron avalanche photodiodesKinch, M. A. / Beck, J. D. / Wan, C. -F. / Ma, F. / Campbell, J. et al. | 2004
- 640
-
Distribution of the high resistivity region in CdZnTe and its effects on gamma-ray detector performanceTerterian, S. / Chu, M. / Ting, D. et al. | 2004
- 645
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Growth of thick CdTe epilayers on GaAs substrates and evaluation of CdTe/n+-GaAs heterojunction diodes for an X-ray imaging detectorNiraula, M. / Yasuda, K. / Nakanishi, Y. / Uchida, K. / Mabuchi, T. / Agata, Y. / Suzuki, K. et al. | 2004
- 651
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Growth of large-diameter ZnTe single crystals by liquid-encapsulated melt growth methodsAsahi, T. / Yabe, T. / Sato, K. et al. | 2004
- 654
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ZnO nanotips grown on Si substrates by metal-organic chemical-vapor depositionZhong, J. / Muthukumar, S. / Saraf, G. / Chen, H. / Chen, Y. / Lu, Y. et al. | 2004
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Differential thermal analysis of supercooling in CdTeTurkevych, I. / Franc, J. / Grill, R. / Höschl, P. / Belas, E. / Moravec, P. et al. | 2004
- 662
-
Physical structure of molecular-beam epitaxy growth defects in HgCdTe and their impact on two-color detector performanceBuell, A. A. / Pham, L. T. / Newton, M. D. / Venzor, G. M. / Norton, E. M. / Smith, E. P. / Varesi, J. B. / Harper, V. B. / Johnson, S. M. / Coussa, R. A. et al. | 2004
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Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substratesBallet, P. / Noël, F. / Pottier, F. / Plissard, S. / Zanatta, J. P. / Baylet, J. / Gravrand, O. / Borniol, E. / Martin, S. / Castelein, P. et al. | 2004
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Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structuresAntoszewski, J. / Faraone, L. / Vurgaftman, I. / Meyer, J. R. / Hoffman, C. A. et al. | 2004
- 684
-
Macro-loading effects of electron-cyclotron resonance etched II–VI materialsStoltz, A. J. / Benson, J. D. / Varesi, J. B. / Martinka, M. / Sperry, M. J. / Kaleczyc, A. W. / Almeida, L. A. / Boyd, P. R. / Dinan, J. H. et al. | 2004
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-
Study of the pixel-pitch reduction for HgCdTe infrared dual-band detectorsBaylet, J. / Gravrand, O. / Laffosse, E. / Vergnaud, C. / Ballerand, S. / Aventurier, B. / Deplanche, J. C. / Ballet, P. / Castelein, P. / Chamonal, J. P. et al. | 2004
- 701
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Optical-absorption model for molecular-beam epitaxy HgCdTe and application to infrared detector photoresponseMoazzami, K. / Phillips, J. / Lee, D. / Edwall, D. / Carmody, M. / Piquette, E. / Zandian, M. / Arias, J. et al. | 2004
- 709
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Near-bandgap infrared absorption properties of HgCdTeChang, Y. / Badano, G. / Zhao, J. / Zhou, Y. D. / Ashokan, R. / Grein, C. H. / Nathan, V. et al. | 2004
- 714
-
High-resolution mapping of infrared photoluminescenceFurstenberg, Robert / White, Jeffrey O. / Dinan, John H. / Olson, Gregory L. et al. | 2004
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-
Experimental Study of Non-Stoichiometry in Cd~1~-~xZn~xTe~1~+~/~-~d~e~l~t~aGreenberg, J. H. / Guskov, V. N. / Fiederle, M. / Benz, K. W. et al. | 2004
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Experimental study of non-stoichiometry in Cd1−xZnxTe1±δGreenberg, J. H. / Guskov, V. N. / Fiederle, M. / Benz, K. -W. et al. | 2004
- 724
-
Optical properties of CdSexTe1−x epitaxial films studied by spectroscopic ellipsometryPeiris, F. C. / Weber, Z. J. / Chen, Y. / Brill, G. et al. | 2004
- 728
-
Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTeSwartz, C. H. / Tompkins, R. P. / Giles, N. C. / Myers, T. H. / Edwall, D. D. / Ellsworth, J. / Piquette, E. / Arias, J. / Berding, M. / Krishnamurthy, S. et al. | 2004
- 737
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Concentrations of native and gold defects in HgCdTe from first principles calculationsCiani, Anthony J. / Ogut, Serdar / Batra, Inder P. et al. | 2004
- 742
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Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiation detector applicationsSzeles, Csaba / Cameron, Scott E. / Soldner, Stephen A. / Ndap, Jean-Olivier / Reed, Michael D. et al. | 2004
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Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTeEdwall, D. / Piquette, E. / Ellsworth, J. / Arias, J. / Swartz, C. H. / Bai, L. / Tompkins, R. P. / Giles, N. C. / Myers, T. H. / Berding, M. et al. | 2004
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Investigations into the source of 1/f noise in HgxCd1−xTe diodesAshby, M. K. / Gordon, N. T. / Elliott, C. T. / Jones, C. L. / Maxey, C. D. / Hipwood, L. / Catchpole, R. et al. | 2004
- 761
-
Determination of individual layer composition and thickness in multilayer HgCdTe structuresDaraselia, M. / Carmody, M. / Zandian, M. / Arias, J. M. et al. | 2004
- 767
-
Low-temperature processing of antimony-implanted siliconAlzanki, T. / Gwilliam, R. / Emerson, N. G. / Sealy, B. J. et al. | 2004
- 770
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The reaction characteristics of ultra-thin Ni films on undoped and doped Si (100)Jiang, Yu-Long / Ru, Guo-Ping / Liu, Jian-Hai / Qu, Xin-Ping / Li, Bing-Zong et al. | 2004
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-
Large-area oxidation of AlAs layers for dielectric stacks and thick buried oxidesTandon, S. N. / Gopinath, J. T. / Erchak, A. A. / Petrich, G. S. / Kolodziejski, L. A. / Ippen, E. P. et al. | 2004
- 780
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A dry-patterned Cu(Mg) alloy film as a gate electrode in a thin-film transistor liquid crystal displayYang, H. J. / Ko, Y. K. / Jang, J. / Soh, H. S. / Chae, G. -S. / Hong, H. N. / Lee, J. G. et al. | 2004
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Low-temperature crystallization of amorphous silicon using Cu field-aided lateral crystallization at 350°CPark, Kyoung-Wan / Cho, Ki-Taek / Ahn, Jin-Yong / Choi, Duck-Kyun et al. | 2004
- 786
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Low-Temperature Crystallization of Amorphous Silicon Using Cu Field-Aided Lateral Crystallization at 350^oCPark, K.-W. / Cho, K.-T. / Ahn, J.-Y. / Choi, D.-K. et al. | 2004
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Effects of phosphorus content on the reaction of electroless Ni-P with Sn and crystallization of Ni-PSohn, Y. C. / Yu, Jin / Kang, S. K. / Shih, D. Y. / Choi, W. K. et al. | 2004
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Electromigration and integration aspects for the copper-SiLK systemTseng, H. S. / Chiou, Bi-Shiou / Wu, W. F. / Ho, C. C. et al. | 2004
- 802
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Excess Si atoms near the pyrolytic-gas-passivated ultrathin silicon oxide/Si(100) interfaceYamada, Hiroshi et al. | 2004
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Er2O3 for high-gain waveguide amplifiersSaini, Sajan / Chen, Kevin / Duan, Xiaoman / Michel, Jurgen / Kimerling, Lionel C. / Lipson, Michal et al. | 2004
- 815
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Lattice instability in ZnSe:Ni crystalGudkov, V. V. / Lonchakov, A. T. / Tkach, A. V. / Zhevstovskikh, I. V. / Sokolov, V. I. / Gruzdev, N. B. et al. | 2004
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Silicon nano-asperities: Morphological evolution and electrical properties of double-polysilicon interlayersEdrei, R. / Shauly, E. N. / Roizin, Y. / Gridin, V. V. / Akhvlediani, R. / Hoffman, A. et al. | 2004
- 826
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Growth and characterization of ZnO thin films on GaN epilayersSmith, T. P. / McLean, H. A. / Smith, David J. / Miraglia, P. Q. / Roskowski, A. M. / Davis, R. F. et al. | 2004
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Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substratesBoudaa, Mouloud / Regreny, P. / Leclercq, J. L. / Besland, M. P. / Marty, O. / Hollinger, G. et al. | 2004
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Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor depositionLiu, Wei / Chua, Soo Jin / Zhang, Xin Hai / Zhang, Ji et al. | 2004
- 846
-
Normal-incidence mid-infrared Ge quantum-dot photodetectorLiu, Fei / Tong, Song / Liu, Jianlin / Wang, Kang L. et al. | 2004
- 851
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Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriersGovindaraju, Sridhar / Reifsnider, Jason M. / Oye, Michael M. / Holmes, Archie L. Jr. et al. | 2004
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Infrared transmission spectra of Cd1−xZnxTe (x = 0.04) crystalsYujie, Li / Zhi, Gu / Guoqiang, Li / Wangqi, Jie et al. | 2004
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Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAsMoiseev, K. D. / Krier, A. / Yakovlev, Y. P. et al. | 2004
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Impurities in hydride gases part 2: Investigation of trace CO2 in the liquid and vapor phases of ultra-pure ammoniaFunke, Hans H. / Welchhans, Jon / Watanabe, Tadaharu / Torres, Robert / Houlding, Virginia H. / Raynor, Mark W. et al. | 2004
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Correlation of CdZnTe(211)B substrate surface morphology and HgCdTe(211)B epilayer defectsZhao, J. / Chang, Y. / Badano, G. / Sivananthan, S. / Markunas, J. / Lewis, S. / Dinan, J. H. / Wijewarnasuriya, P. S. / Chen, Y. / Brill, G. et al. | 2004
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Germanium-on-insulator substrates by wafer bondingTracy, Clarence J. / Fejes, Peter / Theodore, N. David / Maniar, Papu / Johnson, Eric / Lamm, Albert J. / Paler, Anthony M. / Malik, Igor J. / Ong, Philip et al. | 2004
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Simulation of the potting effect on the high-G MEMS accelerometerJiang, Yuqi / Du, Maohua / Luo, Le / Li, Xinxin et al. | 2004
- 900
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Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storageChen, W. -M. / Mccloskey, P. / Byrne, P. / Cheasty, P. / Duffy, G. / Rohan, J. F. / Boardman, J. / Mulcahy, A. / O’Mathuna, S. C. et al. | 2004
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Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistorsCha, Ho-Young / Choi, Y. C. / Thompson, R. M. / Kaper, V. / Shealy, J. R. / Eastman, L. F. / Spencer, M. G. et al. | 2004
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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer depositionYe, P. D. / Wilk, G. D. / Yang, B. / Kwo, J. / Gossmann, H. -J. L. / Frei, M. / Mannaerts, J. P. / Sergent, M. / Hong, M. / Ng, K. K. et al. | 2004
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Formation of thermally stable Ni monosilicide using an inductively coupled plasma processOk, Young-Woo / Choi, Chel-Jong / Maeng, Jeong-Tae / Seong, Tae-Yeon et al. | 2004
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Creep properties of Sn-8Mass%Zn-3Mass%Bi lead-free alloyShohji, Ikuo / Gagg, Colin / Plumbridge, William J. et al. | 2004
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Microstructure and mechanical properties of annealed Al-1%Si bonding wireLiu, Yanqing / Jones, W. Kinzy et al. | 2004
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Thermodynamic assessment of the Sn-Co lead-free solder systemLiu, Libin / Andersson, Cristina / Liu, Johan et al. | 2004
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Selective formation of intermetallic compounds in Sn-20In-0.8Cu ball grid array solder joints with Au/Ni surface finishesWu, Hsing-Fei / Chiang, Ming-Jui / Chuang, Tung-Han et al. | 2004
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Residual stress and interfacial reaction of the electroplated Ni-Cu alloy under bump metallurgy in the flip-chip solder jointKim, S. -H. / Kim, J. -Y. / Yu, J. / Lee, T. Y. et al. | 2004
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Development of creep-resistant, nanosized Ag particle-reinforced Sn-Pb composite soldersLiu, J. P. / Guo, F. / Yan, Y. F. / Wang, W. B. / Shi, Y. W. et al. | 2004
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Constitutive relations on creep for SnAgCuRE lead-free solder jointsChen, Zhigang / Shi, Yaowu / Xia, Zhidong et al. | 2004
- 972
-
Mesa-size dependence characteristics of vertical surface-emitting lasersDas, N. C. / Chang, W. et al. | 2004
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Study of immersion silver and tin printed-circuit-board surface finishes in lead-free solder applicationsArra, Minna / Shangguan, Dongkai / Xie, Dongji / Sundelin, Janne / Lepistö, Toivo / Ristolainen, Eero et al. | 2004
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-
Solid-state intermetallic compound layer growth between copper and 95.5Sn-3.9Ag-0.6Cu solderVianco, Paul T. / Rejent, Jerome A. / Hlava, Paul F. et al. | 2004
- 1005
-
In-situ cleaning and passivation of oxidized Cu surfaces by alkanethiols and its application to wire bondingWhelan, Caroline M. / Kinsella, Michael / Ho, Hong Meng / Maex, Karen et al. | 2004
- 1012
-
High-resistivity GaSb bulk crystals grown by the vertical bridgman methodPino, R. / Ko, Y. / Dutta, P. S. et al. | 2004
- 1016
-
The electrical properties and stability of the hafnium silicate/Si0.8Ge0.2(100) interfaceAddepalli, S. / Sivasubramani, P. / Kim, M. J. / Gnade, B. E. / Wallace, R. M. et al. | 2004
- 1022
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Impact of carbon concentration on the interface density of states of metal-oxide Si1−x−y GexCy (strained) capacitorsCuadras, A. / Garrido, B. / Morante, J. R. / Fonseca, L. / Pressel, K. / Tillack, B. / Grabolla, T. et al. | 2004
- 1028
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Effect of bump characteristics and temperature variation on the online contact resistance of anisotropic conductive jointsAli, Lafir / Chan, Y. C. / Alam, M. O. et al. | 2004