Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates (Englisch)
- Neue Suche nach: Zukauskas, A.
- Neue Suche nach: Kazlauskas, K.
- Neue Suche nach: Tamulaitis, G.
- Neue Suche nach: Pobedinskas, P.
- Neue Suche nach: Jursenas, S.
- Neue Suche nach: Miasojedovas, S.
- Neue Suche nach: Ivanov, V. Y.
- Neue Suche nach: Godlewski, M.
- Neue Suche nach: Skierbiszewski, C.
- Neue Suche nach: Siekacz, M.
- Neue Suche nach: Zukauskas, A.
- Neue Suche nach: Kazlauskas, K.
- Neue Suche nach: Tamulaitis, G.
- Neue Suche nach: Pobedinskas, P.
- Neue Suche nach: Jursenas, S.
- Neue Suche nach: Miasojedovas, S.
- Neue Suche nach: Ivanov, V. Y.
- Neue Suche nach: Godlewski, M.
- Neue Suche nach: Skierbiszewski, C.
- Neue Suche nach: Siekacz, M.
In:
PHYSICA STATUS SOLIDI B BASIC RESEARCH
;
243
, 7
;
1614-1618
;
2006
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates
-
Beteiligte:Zukauskas, A. ( Autor:in ) / Kazlauskas, K. ( Autor:in ) / Tamulaitis, G. ( Autor:in ) / Pobedinskas, P. ( Autor:in ) / Jursenas, S. ( Autor:in ) / Miasojedovas, S. ( Autor:in ) / Ivanov, V. Y. ( Autor:in ) / Godlewski, M. ( Autor:in ) / Skierbiszewski, C. ( Autor:in ) / Siekacz, M. ( Autor:in )
-
Erschienen in:PHYSICA STATUS SOLIDI B BASIC RESEARCH ; 243, 7 ; 1614-1618
-
Verlag:
- Neue Suche nach: John Wiley & Sons, Ltd
-
Erscheinungsdatum:01.01.2006
-
Format / Umfang:5 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 530
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 530 -
Datenquelle:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Inhaltsverzeichnis – Band 243, Ausgabe 7
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1403
-
Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X‐ray microdiffractionDrakopoulos, M. / Laügt, M. / Riemann, T. / Beaumont, B. / Gibart, P. et al. | 2006
- 1411
-
MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layerKuboya, S. / Nakajima, F. / Katayama, R. / Onabe, K. et al. | 2006
- 1416
-
N‐plasma assisted MBE grown GaN films on Si(111)Gangopadhyay, Subhashis / Schmidt, Thomas / Falta, Jens et al. | 2006
- 1421
-
New semiconductor alloy GaNAsBi with temperature‐insensitive bandgapYoshimoto, Masahiro / Huang, Wei / Feng, Gan / Oe, Kunishige et al. | 2006
- 1426
-
Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layersMalinauskas, T. / Jarašiūnas, K. / Aleksiejunas, R. / Gogova, D. / Monemar, B. / Beaumont, B. / Gibart, P. et al. | 2006
- 1431
-
Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3Kumagai, Y. / Takemoto, K. / Kikuchi, J. / Hasegawa, T. / Murakami, H. / Koukitu, A. et al. | 2006
- 1436
-
Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealingTuomisto, F. / Hautakangas, S. / Makkonen, I. / Ranki, V. / Puska, M. J. / Saarinen, K. / Bockowski, M. / Suski, T. / Paskova, T. / Monemar, B. et al. | 2006
- 1441
-
Optical polarization anisotropy in strained A‐plane GaN films on R‐plane sapphireGhosh, Sandip / Misra, Pranob / Grahn, Holger T. / Imer, Bilge / Nakamura, Shuji / DenBaars, Steven P. / Speck, James S. et al. | 2006
- 1446
-
N‐polarity GaN on sapphire substrate grown by MOVPEMatsuoka, Takashi / Kobayashi, Yasuyuki / Takahata, Hiroko / Mitate, Toshitugu / Mizuno, Seiichiro / Sasaki, Atsushi / Yoshimoto, Mamoru / Ohnishi, Tuyoshi / Sumiya, Masatomo et al. | 2006
- 1451
-
RF‐MBE growth and structural characterization of cubic InN films on GaAsNakamura, T. / Iida, K. / Katayama, R. / Yamamoto, T. / Onabe, K. et al. | 2006
- 1456
-
Temperature‐dependent growth and characterization of N‐polar InN films by molecular beam epitaxyWang, Xinqiang / Che, Song‐Bek / Ishitani, Yoshihiro / Yoshikawa, Akihiko et al. | 2006
- 1461
-
Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma‐assisted molecular beam epitaxyWang, K. R. / Tu, L. W. / Lin, S. J. / Chen, Y. L. / Jiang, Z. W. / Chen, M. / Hsiao, C. L. / Cheng, K. H. / Yeh, J. W. / Chen, S. K. et al. | 2006
- 1468
-
A‐plane (11$ \bar 2 $0) InN growth on nitridated R‐plane (10$ \bar 1 $2) sapphire by ECR‐MBEKumagai, Y. / Tsuyuguchi, A. / Naoi, H. / Araki, T. / Na, H. / Nanishi, Y. et al. | 2006
- 1468
-
A-plane (1120) InN growth on nitridated R-plane (1012) sapphire by ECR-MBEKumagai, Y. / Tsuyuguchi, A. / Naoi, H. / Araki, T. / Na, H. / Nanishi, Y. et al. | 2006
- 1468
-
A-plane (11UEQN LOC="INLINE" NOTAT="TEX"> \bar 2 0) InN growth on nitridated R-plane (10UEQN LOC="INLINE" NOTAT="TEX"> \bar 1 2) sapphire by ECR-MBEKumagai, Y. et al. | 2006
- 1472
-
Undoped and rare‐earth doped GaN quantum dots on AlGaNHori, Yuji / Andreev, Thomas / Florian, Thomas / Bellet‐Amalric, Edith / Le Si Dang, Daniel / Tanaka, Mitsuhiro / Oda, Osamu / Daudin, Bruno et al. | 2006
- 1476
-
Growth of AlN nanowires by metal organic chemical vapour depositionCimalla, V. / Foerster, Ch. / Cengher, D. / Tonisch, K. / Ambacher, O. et al. | 2006
- 1481
-
Growth of high‐In‐content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma‐assisted molecular‐beam epitaxyKouno, Tetsuya / Kikuchi, Akihiko / Kishino, Katsumi et al. | 2006
- 1486
-
Low density GaN quantum dots on AlGaNPakuła, K. / Bożek, R. / Surowiecka, K. / Stępniewski, R. / Wysmolek, A. / Baranowski, J. M. et al. | 2006
- 1490
-
Epitaxial growth and characterization of InN nanorods and compact layers on silicon substratesSánchez‐García, M. A. / Grandal, J. / Calleja, E. / Lazic, S. / Calleja, J. M. / Trampert, A. et al. | 2006
- 1494
-
Resonant Raman scattering in InGaN alloysDavydov, V. Yu. / Klochikhin, A. A. / Goncharuk, I. N. / Smirnov, A. N. / Sakharov, A. V. / Skvortsov, A. P. / Yagovkina, M. A. / Lebedev, V. M. / Lu, Hai / Schaff, William J. et al. | 2006
- 1499
-
Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown on a‐plane 6H‐SiCCros, A. / Budagosky, J. A. / García‐Cristóbal, A. / Garro, N. / Cantarero, A. / Founta, S. / Mariette, H. / Daudin, B. et al. | 2006
- 1508
-
Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffractionBarabash, R. I. / Ice, G. E. / Liu, W. / Roder, C. / Figge, S. / Einfeldt, S. / Hommel, D. / Katona, T. M. / Speck, J. S. / DenBaars, S. P. et al. | 2006
- 1514
-
Study of InAsN quantum dots on GaAs substrates by molecular beam epitaxyUeta, A. / Akahane, K. / Gozu, S. / Yamamoto, N. / Ohtani, N. et al. | 2006
- 1519
-
In situ and ex situ grazing incidence diffraction anomalous fine structure study of GaN/AlN quantum dotsCoraux, J. / Renevier, H. / Proietti, M. G. / Favre‐Nicolin, V. / Daudin, B. / Renaud, G. et al. | 2006
- 1524
-
X‐ray diffraction reciprocal lattice space mapping of a‐plane AlGaN on GaNTsuda, Michinobu / Furukawa, Hiroko / Honshio, Akira / Iwaya, Motoaki / Kamiyama, Satoshi / Amano, Hiroshi / Akasaki, Isamu et al. | 2006
- 1529
-
Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3substratesDanilchenko, B. A. / Zelensky, S. E. / Drok, E. / Vitusevich, S. A. / Danylyuk, S. V. / Klein, N. / Lüth, H. / Belyaev, A. E. / Kochelap, V. A. et al. | 2006
- 1533
-
Relaxation in crack‐free AlN/GaN superlatticesKröger, R. / Kruse, C. / Roder, C. / Hommel, D. / Rosenauer, A. et al. | 2006
- 1537
-
Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experimentsDmowski, L. H. / Dybko, K. / Plesiewicz, J. / Suski, T. / Lu, H. / Schaff, W. / Kurouchi, M. / Nanishi, Y. / Konczewicz, L. / Cimalla, V. et al. | 2006
- 1541
-
Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaNWójtowicz, T. / Gloux, F. / Ruterana, P. / Nouet, G. / Bodiou, L. / Braud, A. / Lorenz, K. / Alves, E. et al. | 2006
- 1551
-
Electric fields in AlGaN/GaN quantum well structuresMcAleese, C. / Costa, P. M. F. J. / Graham, D. M. / Xiu, H. / Barnard, J. S. / Kappers, M. J. / Dawson, P. / Godfrey, M. J. / Humphreys, C. J. et al. | 2006
- 1560
-
Degenerate four‐wave mixing spectroscopy of GaN films on various substratesIshiguro, T. / Toda, Y. / Adachi, S. / Mukai, T. / Hoshino, K. / Arakawa, Y. et al. | 2006
- 1564
-
Transient pump–probe measurements for polarized excitons in strained GaN epitaxial layersIshiguro, T. / Toda, Y. / Adachi, S. / Arita, M. / Arakawa, Y. et al. | 2006
- 1568
-
Four‐wave mixing measurements of biexcitons in uniaxially‐strained GaN filmsAdachi, Satoru / Toda, Yasunori / Ishiguro, Tetsuro et al. | 2006
- 1572
-
Transition energies and Stokes shift analysis for In‐rich InGaN alloysSchley, P. / Goldhahn, R. / Winzer, A. T. / Gobsch, G. / Cimalla, V. / Ambacher, O. / Rakel, M. / Cobet, C. / Esser, N. / Lu, H. et al. | 2006
- 1577
-
Meta‐GGA calculation of the electronic structure of group III–V nitridesLitimein, F. / Bouhafs, B. / Nouet, G. / Ruterana, P. et al. | 2006
- 1583
-
Generalized Wannier functions: An efficient way to construct ab‐initio tight‐binding parameters for group‐III nitridesWahn, M. / Neugebauer, J. et al. | 2006
- 1588
-
Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxyArvanitidis, J. / Katsikini, M. / Ves, S. / Delimitis, A. / Kehagias, Th. / Komninou, Ph. / Dimakis, E. / Iliopoulos, E. / Georgakilas, A. et al. | 2006
- 1594
-
Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a‐plane GaNDarakchieva, V. / Paskova, T. / Paskov, P. P. / Arwin, H. / Schubert, M. / Monemar, B. / Figge, S. / Hommel, D. / Haskell, B. A. / Fini, P. T. et al. | 2006
- 1599
-
Pressure and composition dependence of the electron effective mass in GaAs1–xNxGorczyca, I. / Christensen, N. E. / Svane, A. et al. | 2006
- 1604
-
The dominant shallow 0.225 eV acceptor in GaNMonemar, B. / Paskov, P. P. / Bergman, J. P. / Paskova, T. / Figge, S. / Dennemarck, J. / Hommel, D. et al. | 2006
- 1609
-
Investigating the electrical properties of Si donors in AlxGa1–xN alloysJames, G. R. / Omnès, F. / Leitch, A. W. R. et al. | 2006
- 1614
-
Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substratesŽukauskas, A. / Kazlauskas, K. / Tamulaitis, G. / Pobedinskas, P. / Juršėnas, S. / Miasojedovas, S. / Ivanov, V. Yu. / Godlewski, M. / Skierbiszewski, C. / Siekacz, M. et al. | 2006
- 1619
-
Spatially resolved cathodoluminescence, photoluminescence, electroluminescence, and reflectance study of GaInN quantum wells on non‐(0001) GaN facetsFeneberg, M. / Schirra, M. / Neubert, B. / Brückner, P. / Scholz, F. / Sauer, R. / Thonke, K. et al. | 2006
- 1625
-
Analytical model for the quantum‐confined Stark effect including electric field screening by non‐equilibrium carriersBulashevich, K. A. / Karpov, S. Yu. / Suris, R. A. et al. | 2006
- 1630
-
Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wellsTchernycheva, M. / Nevou, L. / Doyennette, L. / Julien, F. H. / Guillot, F. / Monroy, E. / Remmele, T. / Albrecht, M. et al. | 2006
- 1634
-
Raman study of N bonding in AlGaAs/InGaAsN multiquantum wellsLazić, S. / Calleja, J. M. / Hey, R. / Ploog, K. et al. | 2006
- 1639
-
Strong light–matter coupling in GaN microcavities grown on silicon(111) at room temperatureSellers, I. R. / Semond, F. / Leroux, M. / Massies, J. / Henneghien, A‐L. / Disseix, P. / Leymarie, J. / Vasson, A. et al. | 2006
- 1643
-
Fast spin relaxation in InGaN/GaN multiple quantum wellsBrown, J. / Wells, J.‐P. R. / Hashemizadeh, S. A. / Parbrook, P. J. / Wang, T. / Fox, A. M. / Mowbray, D. J. / Skolnick, M. S. et al. | 2006
- 1647
-
Reflectance and photoluminescence studies of InGaN/GaN multiple‐quantum‐well structures embedded in an asymmetric microcavityLin, D. Y. / Shiu, J. J. / Lin, C. F. et al. | 2006
- 1652
-
Optical properties of single non‐polar GaN quantum dotsRol, F. / Gayral, B. / Founta, S. / Daudin, B. / Eymery, J. / Gérard, J.‐M. / Mariette, H. / Dang, Le Si / Peyrade, D. et al. | 2006
- 1657
-
Growth and optical characterization of InAsN quantum dotsTsurusawa, H. / Nishikawa, A. / Katayama, R. / Onabe, K. et al. | 2006
- 1661
-
Micro‐photoluminescence studies of InGaN/GaN quantum dots up to 150 KSebald, K. / Lohmeyer, H. / Gutowski, J. / Yamaguchi, T. / Hommel, D. et al. | 2006
- 1665
-
The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPENarita, Tetsuo / Honda, Yoshio / Yamaguchi, Masahito / Sawaki, Nobuhiko et al. | 2006
- 1669
-
GaN/AlGaN superlattices for optoelectronics in the mid‐infraredGuillot, F. / Monroy, E. / Gayral, B. / Bellet‐Amalric, E. / Jalabert, D. / Gérard, J.‐M. / Dang, Le Si / Tchernycheva, M. / Julien, F. H. / Monnoye, S. et al. | 2006
- 1674
-
Resonant Raman characterization of InAlGaN/GaN heterostructuresCros, A. / Cantarero, A. / Pelekanos, N. T. / Georgakilas, A. / Pomeroy, J. / Kuball, M. et al. | 2006
- 1679
-
Superconductivity of InN with a well defined Fermi surfaceInushima, T. / Kato, N. / Maude, D. K. / Lu, Hai / Schaff, W. J. / Tauk, R. / Meziani, Y. / Ruffenack, S. / Briot, O. / Knap, W. et al. | 2006
- 1687
-
Site selectivity of Fe3+Ga and the formation of Fe3+Ga–Gai pairs in GaNGehlhoff, W. / Azamat, D. / Hoffmann, A. et al. | 2006
- 1692
-
X‐ray absorption near edge spectroscopy at the Mn K‐edge in highly homogeneous GaMnN diluted magnetic semiconductorsSancho‐Juan, O. / Cantarero, A. / Martínez‐Criado, G. / Olguín, D. / Garro, N. / Cros, A. / Salomé, M. / Susini, J. / Dhar, S. / Ploog, K. et al. | 2006
- 1696
-
Photoemission and X‐ray absorption studies of the electronic structure of GaN‐based diluted magnetic semiconductorsHwang, J. I. / Ishida, Y. / Kobayashi, M. / Osafune, Y. / Mizokawa, T. / Fujimori, A. / Takeda, Y. / Terai, K. / Fujimori, S‐I. / Saitoh, Y. et al. | 2006
- 1701
-
Doping of GaN with Fe and Mg for spintronics applicationsBonanni, Alberta / Simbrunner, Clemens / Wegscheider, Matthias / Przybylinska, Hanka / Wolos, Agnieszka / Sitter, Helmut / Jantsch, Wolfgang et al. | 2006
- 1706
-
Quantum transport in high mobility AlGaN/GaN 2DEGs and nanostructuresSchmult, S. / Manfra, M. J. / Sergent, A. M. / Punnoose, A. / Chou, H. T. / Goldhaber‐Gordon, D. / Molnar, R. J. et al. | 2006
- 1713
-
The performance of AlGaN solar blind UV photodetectors: responsivity and decay timeCherkashinin, G. / Lebedev, V. / Wagner, R. / Cimalla, I. / Ambacher, O. et al. | 2006