Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC (Englisch)
- Neue Suche nach: Carlsson, P.
- Neue Suche nach: Son, N.T.
- Neue Suche nach: Pedersen, H.
- Neue Suche nach: Isoya, J.
- Neue Suche nach: Morishita, N.
- Neue Suche nach: Ohshima, T.
- Neue Suche nach: Itoh, H.
- Neue Suche nach: Janzen, E.
- Neue Suche nach: Carlsson, P.
- Neue Suche nach: Son, N.T.
- Neue Suche nach: Pedersen, H.
- Neue Suche nach: Isoya, J.
- Neue Suche nach: Morishita, N.
- Neue Suche nach: Ohshima, T.
- Neue Suche nach: Itoh, H.
- Neue Suche nach: Janzen, E.
In:
MATERIALS SCIENCE FORUM
;
615/617
;
401-404
;
2009
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC
-
Beteiligte:Carlsson, P. ( Autor:in ) / Son, N.T. ( Autor:in ) / Pedersen, H. ( Autor:in ) / Isoya, J. ( Autor:in ) / Morishita, N. ( Autor:in ) / Ohshima, T. ( Autor:in ) / Itoh, H. ( Autor:in ) / Janzen, E. ( Autor:in )
-
Erschienen in:MATERIALS SCIENCE FORUM ; 615/617 ; 401-404
-
Verlag:
- Neue Suche nach: Transtec Publications
-
Erscheinungsdatum:01.01.2009
-
Format / Umfang:4 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 620.11
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 620.11 -
Datenquelle:
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- 0
-
Overview| 2009
- -1
-
Sponsor| 2009
- 3
-
Defect Status in SiC Manufacturing| 2009
- -3
-
Committees| 2009
- -4
-
Preface| 2009
- 7
-
Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method| 2009
- 11
-
Germanium Incorporation during PVT Bulk Growth of Silicon Carbide| 2009
- 15
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Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method| 2009
- 19
-
Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside| 2009
- 23
-
In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction| 2009
- 27
-
Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method| 2009
- 31
-
Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase| 2009
- 37
-
High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers| 2009
- 41
-
Top Seeded Solution Growth of 3C-SiC Single Crystals| 2009
- 45
-
Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT| 2009
- 49
-
Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC| 2009
- 55
-
Thick Epitaxial Layers Growth by Chlorine Addition| 2009
- 61
-
Basal Plane Dislocation Mitigation in 8º Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition| 2009
- 61
-
Basal Plane Dislocation Mitigation in 8^o Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor DepositionVanMil, B.L. / Stahlbush, R.E. / Myers-Ward, R.L. / Picard, Y.N. / Kitt, S.A. / McCrate, J.M. / Katz, S.L. / Gaskill, D.K. / Eddy, C.R. et al. | 2009
- 67
-
Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer| 2009
- 73
-
Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC| 2009
- 77
-
Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV| 2009
- 81
-
Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates| 2009
- 81
-
Growth of 4H-SiC Epitaxial Layers on 4^o Off-Axis Si-Face SubstratesHenry, A. / Leone, S. / Pedersen, H. / Kordina, O. / Janzen, E. et al. | 2009
- 85
-
P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates| 2009
- 89
-
Chloride-Based SiC Epitaxial Growth| 2009
- 93
-
Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition| 2009
- 97
-
Low-Temperature Homoepitaxial Growth with SiCl4 Precursor Compared to HCl Assisted SiH4-Based Growth| 2009
- 101
-
Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers| 2009
- 105
-
Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC| 2009
- 105
-
Turning of Basal Plane Dislocations during Epitaxial Growth on 4^o Off-Axis 4H-SiCMyers-Ward, R.L. / VanMil, B.L. / Stahlbush, R.E. / Katz, S.L. / McCrate, J.M. / Kitt, S.A. / Eddy, C.R. / Gaskill, D.K. et al. | 2009
- 109
-
The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality| 2009
- 113
-
Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth| 2009
- 117
-
Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC| 2009
- 121
-
Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth| 2009
- 125
-
Inverted Pyramid Defects in 4H-SiC Epilayers| 2009
- 129
-
PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer| 2009
- 133
-
On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications| 2009
- 137
-
Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates| 2009
- 141
-
LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application| 2009
- 145
-
High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)| 2009
- 149
-
Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si| 2009
- 153
-
A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios| 2009
- 157
-
Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer| 2009
- 161
-
Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD| 2009
- 165
-
P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)| 2009
- 169
-
Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon| 2009
- 173
-
Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls| 2009
- 177
-
P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates| 2009
- 181
-
Structural Properties of 3C-SiC Grown by Sublimation Epitaxy| 2009
- 185
-
Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates| 2009
- 189
-
Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide| 2009
- 193
-
Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase| 2009
- 199
-
Growth of Graphene Layers on Silicon Carbide| 2009
- 203
-
Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates| 2009
- 207
-
TEM Investigations of Graphene on 4H-SiC(0001)| 2009
- 211
-
Graphene Formation on SiC Substrates| 2009
- 215
-
AFM and Raman Studies of Graphene Exfoliated on SiC| 2009
- 219
-
Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)| 2009
- 223
-
Investigation of Graphene Growth on 4H-SiC| 2009
- 227
-
Formation of Different Carbon Phases on SiC| 2009
- 231
-
Study of the Electrical Characteristics of the CNT/SiC Interface| 2009
- 235
-
Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics| 2009
- 239
-
Textile Solar Cells Based on SiC Microwires| 2009
- 245
-
Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping| 2009
- 251
-
Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography| 2009
- 255
-
Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping| 2009
- 259
-
Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity| 2009
- 263
-
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC| 2009
- 267
-
Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes| 2009
- 271
-
Dislocation-Induced Birefringence in Silicon Carbide| 2009
- 275
-
Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates| 2009
- 279
-
An Effective Method of Characterization of SiC Substrates| 2009
- 283
-
Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers| 2009
- 287
-
Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers| 2009
- 291
-
Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors| 2009
- 295
-
Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay| 2009
- 299
-
Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors| 2009
- 303
-
Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals| 2009
- 307
-
Features of Hot Hole Transport in 6H-SiCSankin, V.I. / Shkrebiy, P.P. / Lepneva, A.A. / Ostroumov, A.G. / Yakimova, R. et al. | 2009
- 307
-
Features of Hot Hole Transport in 6Н-SiC| 2009
- 311
-
Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes| 2009
- 315
-
Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide| 2009
- 319
-
Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique| 2009
- 323
-
Microhardness of 6H- and 4H-SiC Substrates| 2009
- 327
-
Electrical and Mechanical Properties of Post-Annealed SiCxNy Films| 2009
- 331
-
A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth| 2009
- 335
-
Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films| 2009
- 339
-
8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?| 2009
- 343
-
Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC| 2009
- 347
-
The Silicon Vacancy in SiC| 2009
- 353
-
Pulsed EPR Studies of the Tv2a Center in 4H-SiC| 2009
- 357
-
SiCCSiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC| 2009
- 361
-
Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC| 2009
- 365
-
Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC| 2009
- 369
-
The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC| 2009
- 373
-
Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy| 2009
- 377
-
Defects Introduced by Electron-Irradiation at Low Temperatures in SiC| 2009
- 381
-
Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy| 2009
- 385
-
Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy| 2009
- 389
-
Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes| 2009
- 393
-
Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS| 2009
- 397
-
Defects in High Energy Ion Irradiated 4H-SiC| 2009
- 401
-
Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC| 2009
- 405
-
Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC| 2009
- 409
-
Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations| 2009
- 413
-
Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing| 2009
- 417
-
Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping| 2009
- 423
-
Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4^o Off-Axis 4H-SiC WafersSunkari, S.G. / Das, H. / Hoff, C. / Koshka, Y. / Casady, J.R.B. / Casady, J.B. et al. | 2009
- 423
-
Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers| 2009
- 427
-
Interface States and Barrier Heights on Metal/4H-SiC Interfaces| 2009
- 431
-
Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers| 2009
- 435
-
Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging| 2009
- 439
-
Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach| 2009
- 443
-
Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties| 2009
- 449
-
Simulation of Ion Implantation in SiC: Dopant Profiling and Activation| 2009
- 453
-
Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC| 2009
- 457
-
Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy| 2009
- 461
-
Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments| 2009
- 465
-
SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2| 2009
- 469
-
C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+n 4H-SiC Diodes| 2009
- 473
-
Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions| 2009
- 477
-
Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing| 2009
- 481
-
Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation| 2009
- 485
-
Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC| 2009
- 489
-
Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model| 2009
- 493
-
Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide| 2009
- 497
-
Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique| 2009
- 501
-
Characterization of the SiO2/SiC Interface with Impedance Spectroscopy| 2009
- 505
-
Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer| 2009
- 509
-
Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry| 2009
- 513
-
4H-SiC Oxide Characterization with SIMS Using a 13C Tracer| 2009
- 517
-
Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence| 2009
- 521
-
Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO| 2009
- 525
-
Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces| 2009
- 529
-
Oxidation Process of SiC by RTP Technique| 2009
- 533
-
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer| 2009
- 537
-
Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC| 2009
- 541
-
AlON/SiO2 Stacked Gate Dielectrics for 4H-SiC MIS Devices| 2009
- 545
-
Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO2 on 4H-SiC| 2009
- 549
-
Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face| 2009
- 553
-
Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC| 2009
- 557
-
Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation| 2009
- 561
-
High-Temperature Reliable Ni2Si-Based Contacts on SiC Connected to Si-Doped Al Interconnect via Ta/TaN Barrier| 2009
- 565
-
Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN| 2009
- 569
-
Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC| 2009
- 573
-
On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC| 2009
- 577
-
Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC| 2009
- 581
-
Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC| 2009
- 585
-
Process Optimization for High Temperature SiC Lateral Devices| 2009
- 589
-
A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations| 2009
- 593
-
HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces| 2009
- 597
-
Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers| 2009
- 601
-
Electrochemical Polishing of p-Type 4H SiC| 2009
- 605
-
The Effect of Slurry Composition and Flatness on Sub-Surface Damage and Removal in Chemical Mechanical Polishing of 6H-SiC| 2009
- 609
-
Spectroscopic Measurement of Electric Discharge Machining for Silicon Carbide| 2009
- 613
-
SiC Power Devices: Product Improvement Using Diffusion Soldering| 2009
- 617
-
SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates| 2009
- 621
-
Performance Modification of SiC MEMS| 2009
- 625
-
Single Crystal and Polycrystalline 3C-SiC for MEMS Applications| 2009
- 629
-
Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films| 2009
- 633
-
3C-SiC Films on Si for MEMS Applications: Mechanical Properties| 2009
- 637
-
Bottom-Up Routes to Porous Silicon Carbide| 2009
- 643
-
Influence of Surface Roughness on Breakdown Voltage of 4H-SiC SBD with FLR Structure| 2009
- 647
-
4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts| 2009
- 651
-
Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC| 2009
- 655
-
Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)| 2009
- 659
-
Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement| 2009
- 663
-
Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode| 2009
- 667
-
The Impact of Schottky Barrier Tunneling on SiC-JBS Performance| 2009
- 671
-
Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses| 2009
- 675
-
Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer| 2009
- 679
-
Doping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation| 2009
- 683
-
Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC| 2009
- 687
-
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET| 2009
- 691
-
Grayscale Junction Termination for High-Voltage SiC Devices| 2009
- 695
-
Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage| 2009
- 699
-
Lifetime Investigations of 4H-SiC PiN Power Diodes| 2009
- 703
-
Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique| 2009
- 707
-
EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes| 2009
- 711
-
VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications| 2009
- 715
-
Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications| 2009
- 719
-
Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors| 2009
- 723
-
High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress| 2009
- 727
-
High Temperature Characteristics of 4H-SiC RESURF-Type JFET| 2009
- 731
-
Electro-Thermal SPICE Model for High-Voltage SiC VJFETs| 2009
- 735
-
Silicon Carbide Static Induction Transistor with Implanted Buried Gate| 2009
- 739
-
Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)| 2009
- 743
-
Critical Issues for MOS Based Power Devices in 4H-SiC| 2009
- 749
-
Performance of 60 A, 1200 V 4H-SiC DMOSFETs| 2009
- 753
-
Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure| 2009
- 757
-
1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face| 2009
- 761
-
Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET| 2009
- 765
-
High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer| 2009
- 769
-
Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge| 2009
- 773
-
Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs| 2009
- 777
-
Effect of Oxidant in MOCVD-Growth of Al2O3 Gate Insulator on 4H-SiC MOSFET Properties| 2009
- 781
-
Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs| 2009
- 785
-
Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates| 2009
- 789
-
High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces| 2009
- 793
-
Ab Initio Calculations of SiO2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face| 2009
- 797
-
Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs| 2009
- 801
-
Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers| 2009
- 805
-
Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs| 2009
- 809
-
Implications of Threshold-Voltage Instability on SiC DMOSFET Operation| 2009
- 813
-
Channel Hot-Carrier Effect of 4H-SiC MOSFET| 2009
- 817
-
Low Frequency Noise in 4H-SiC MOSFETs| 2009
- 821
-
A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT| 2009
- 825
-
Assessment of High and Low Temperature Performance of SiC BJTs| 2009
- 829
-
4H-SiC Bipolar Junction Transistors with Graded Based Doping ProfileZhang, J.H. / Fursin, L. / Li, X.Q. / Wang, X.H. / Zhao, J.H. / VanMil, B.L. / Myers-Ward, R.L. / Eddy, C.R. / Gaskill, D.K. et al. | 2009
- 829
-
4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile| 2009
- 833
-
Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability| 2009
- 837
-
Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors| 2009
- 841
-
Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE| 2009
- 845
-
Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors| 2009
- 849
-
4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C| 2009
- 849
-
4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 ^oCIvanov, A.M. / Kalinina, E.V. / Strokan, N.B. / Lebedev, A.A. et al. | 2009
- 853
-
Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 ^oCIvanov, A.M. / Strokan, N.B. / Lebedev, A.A. / Kozlovski, V.V. et al. | 2009
- 853
-
Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C| 2009
- 857
-
Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe| 2009
- 861
-
Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV| 2009
- 865
-
Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes| 2009
- 869
-
6H and 4H-SiC Avalanche Photodiodes| 2009
- 873
-
Solar-Blind 4H-SiC Avalanche Photodiodes| 2009
- 877
-
Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability| 2009
- 881
-
High Temperature Characteristics for UV Responsivity of 3C-SiC pn Photodiode| 2009
- 885
-
Silicon Carbide UV Based Photovoltaic for Hostile Environments| 2009
- 889
-
Perspectives of SiC Power Devices in Highly Efficient Renewable Energy Conversion Systems| 2009
- 895
-
Applications of SiC-Transistors in Photovoltaic Inverters| 2009
- 899
-
100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules| 2009
- 903
-
Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs| 2009
- 907
-
Comparison of SiC-JFET and Si-IGBT Inverter Losses| 2009
- 911
-
High Power Density SiC 450A AccuMOSFET for Current Limiting Applications| 2009
- 915
-
Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design| 2009
- 919
-
Monocrystalline and Polycrystalline SiC in EADS Astrium Space Applications| 2009
- 925
-
300°C SiC Blocking Diodes for Solar Array Strings| 2009
- 925
-
300^oC SiC Blocking Diodes for Solar Array StringsMaset, E. / Sanchis-Kilders, E. / Brosselard, P. / Jorda, X. / Vellvehi, M. / Godignon, P. et al. | 2009
- 929
-
Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry| 2009
- 929
-
Prolonged 500 ^oC Operation of 6H-SiC JFET Integrated CircuitryNeudeck, P.G. / Spry, D.J. / Chen, L.Y. / Chang, C.W. / Beheim, G.M. / Okojie, R.S. / Evans, L.J. / Meredith, R.D. / Ferrier, T.L. / Krasowski, M.J. et al. | 2009
- 935
-
GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation| 2009
- 939
-
Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut| 2009
- 943
-
Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates| 2009
- 947
-
Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN| 2009
- 951
-
Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions| 2009
- 955
-
Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire| 2009
- 959
-
Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces| 2009
- 963
-
High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure| 2009
- 967
-
Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures| 2009
- 971
-
High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate| 2009
- 975
-
Two Broadband GaN MMIC Power Amplifiers for EW Systems| 2009
- 979
-
Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction| 2009
- 983
-
Seeded Growth of AlN on (0001)-Plane 6H-SiC Substrates| 2009
- 987
-
Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)| 2009
- 991
-
Large Single Crystal Diamond Plates Produced by Microwave Plasma CVD| 2009
- 995
-
Metal Contacts to Boron-Doped Diamond| 2009
- 999
-
Recent Progress of Diamond Device toward Power Application| 2009
- 1003
-
Device Characteristics Dependence on Diamond SDBs Area| 2009