A manufacturable process integration approach for graphene devices (Englisch)
- Neue Suche nach: Vaziri, S.
- Neue Suche nach: Lupina, G.
- Neue Suche nach: Paussa, A.
- Neue Suche nach: Smith, A. D.
- Neue Suche nach: Henkel, C.
- Neue Suche nach: Lippert, G.
- Neue Suche nach: Dabrowski, J.
- Neue Suche nach: Mehr, W.
- Neue Suche nach: Ostling, M.
- Neue Suche nach: Lemme, M. C.
- Neue Suche nach: Vaziri, S.
- Neue Suche nach: Lupina, G.
- Neue Suche nach: Paussa, A.
- Neue Suche nach: Smith, A. D.
- Neue Suche nach: Henkel, C.
- Neue Suche nach: Lippert, G.
- Neue Suche nach: Dabrowski, J.
- Neue Suche nach: Mehr, W.
- Neue Suche nach: Ostling, M.
- Neue Suche nach: Lemme, M. C.
- Neue Suche nach: Zimmer, T.
- Neue Suche nach: Fregonese, S.
In:
Selected Papers from the ESSDERC 2012 Conference
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185-190
;
2013
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:A manufacturable process integration approach for graphene devices
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Beteiligte:Vaziri, S. ( Autor:in ) / Lupina, G. ( Autor:in ) / Paussa, A. ( Autor:in ) / Smith, A. D. ( Autor:in ) / Henkel, C. ( Autor:in ) / Lippert, G. ( Autor:in ) / Dabrowski, J. ( Autor:in ) / Mehr, W. ( Autor:in ) / Ostling, M. ( Autor:in ) / Lemme, M. C. ( Autor:in )
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Erschienen in:SOLID STATE ELECTRONICS ; 84 ; 185-190
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Verlag:
- Neue Suche nach: Elsevier Science B.V., Amsterdam.
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Erscheinungsdatum:01.01.2013
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Format / Umfang:6 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 621.3 / 621.38152
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
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Datenquelle:
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Inhaltsverzeichnis – Band 84
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- 1
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ForewordZimmer, Thomas / Fregonese, Sebastien et al. | 2013
- 2
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Scale changes in electronics: Implications for nanostructure devices for logic and memory and beyondKim, Jaeyoon / Lee, Sanghyeon / Rubin, J. / Kim, Moonkyung / Tiwari, Sandip et al. | 2013
- 13
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Small NMR biomolecular sensorsSun, Nan / Liu, Yong / Qin, Ling / Lee, Hakho / Weissleder, Ralph / Ham, Donhee et al. | 2013
- 22
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Low-power DRAM-compatible Replacement Gate High-k/Metal Gate StacksRitzenthaler, R. / Schram, T. / Bury, E. / Spessot, A. / Caillat, C. / Srividya, V. / Sebaai, F. / Mitard, J. / Ragnarsson, L.-Å. / Groeseneken, G. et al. | 2013
- 28
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Quasi-double gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applicationsKilchytska, V. / Bol, D. / De Vos, J. / Andrieu, F. / Flandre, D. et al. | 2013
- 38
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Designing digital circuits with nano-scale devices: Challenges and opportunitiesBelleville, Marc / Thomas, Olivier / Valentian, Alexandre / Clermidy, Fabien et al. | 2013
- 46
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Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETsKoyama, M. / Cassé, M. / Coquand, R. / Barraud, S. / Vizioz, C. / Comboroure, C. / Perreau, P. / Maffini-Alvaro, V. / Tabone, C. / Tosti, L. et al. | 2013
- 53
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Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structureKawanago, T. / Kakushima, K. / Ahmet, P. / Kataoka, Y. / Nishiyama, A. / Sugii, N. / Tsutsui, K. / Natori, K. / Hattori, T. / Iwai, H. et al. | 2013
- 58
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Two-step annealing effects on ultrathin EOT higher-k (k =40) ALD-HfO2 gate stacksMorita, Yukinori / Migita, Shinji / Mizubayashi, Wataru / Masahara, Meishoku / Ota, Hiroyuki et al. | 2013
- 65
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Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctionsSakic, Agata / Qi, Lin / Scholtes, Tom L.M. / van der Cingel, Johan / Nanver, Lis K. et al. | 2013
- 74
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80ns/45GHz Pulsed measurement system for DC and RF characterization of high speed microwave devicesWeiß, Mario / Fregonese, Sébastien / Santorelli, Marco / Sahoo, Amit Kumar / Maneux, Cristell / Zimmer, Thomas et al. | 2013
- 83
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In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectricZhang, Xingui / Guo, Hua Xin / Zhu, Zhu / Gong, Xiao / Yeo, Yee-Chia et al. | 2013
- 90
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Hot-electron conduction in ovonic materialsJacoboni, Carlo / Piccinini, Enrico / Buscemi, Fabrizio / Cappelli, Andrea et al. | 2013
- 96
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Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical modelGnani, E. / Gnudi, A. / Reggiani, S. / Baccarani, G. et al. | 2013
- 103
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Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbonsPoljak, M. / Wang, M. / Song, E.B. / Suligoj, T. / Wang, K.L. et al. | 2013
- 112
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Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devicesJungemann, C. / Pham, A.-T. / Hong, S.-M. / Smith, L. / Meinerzhagen, B. et al. | 2013
- 120
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RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation studyAmoroso, Salvatore Maria / Gerrer, Louis / Markov, Stanislav / Adamu-Lema, Fikru / Asenov, Asen et al. | 2013
- 127
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Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETsBonfiglio, Valentina / Iannaccone, Giuseppe et al. | 2013
- 132
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Cell libraries for robust low-voltage operation in nanometer technologiesGemmeke, Tobias / Ashouei, Maryam / Liu, Bo / Meixner, Michael / Noll, Tobias G. / de Groot, Harmke et al. | 2013
- 142
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New parameter extraction method based on split C–V measurements in FDSOI MOSFETsBen Akkez, Imed / Cros, Antoine / Fenouillet-Beranger, Claire / Boeuf, Frederic / Rafhay, Q. / Balestra, Francis / Ghibaudo, Gérard et al. | 2013
- 147
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Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storageWan, Jing / Le Royer, Cyrille / Zaslavsky, Alexander / Cristoloveanu, Sorin et al. | 2013
- 155
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On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memoriesLongnos, F. / Vianello, E. / Cagli, C. / Molas, G. / Souchier, E. / Blaise, P. / Carabasse, C. / Rodriguez, G. / Jousseaume, V. / De Salvo, B. et al. | 2013
- 160
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RTS noise characterization of HfOx RRAM in high resistive statePuglisi, Francesco M. / Pavan, Paolo / Padovani, Andrea / Larcher, Luca / Bersuker, Gennadi et al. | 2013
- 167
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High performance printed N and P-type OTFTs enabling digital and analog complementary circuits on flexible plastic substrateJacob, S. / Abdinia, S. / Benwadih, M. / Bablet, J. / Chartier, I. / Gwoziecki, R. / Cantatore, E. / van Roermund, A.H.M. / Maddiona, L. / Tramontana, F. et al. | 2013
- 179
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Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: 300K transition to Single Electron TransistorDeshpande, V. / Barraud, S. / Jehl, X. / Wacquez, R. / Vinet, M. / Coquand, R. / Roche, B. / Voisin, B. / Triozon, F. / Vizioz, C. et al. | 2013
- 185
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A manufacturable process integration approach for graphene devicesVaziri, Sam / Lupina, Grzegorz / Paussa, Alan / Smith, Anderson D. / Henkel, Christoph / Lippert, Gunther / Dabrowski, Jarek / Mehr, Wolfgang / Östling, Mikael / Lemme, Max C. et al. | 2013
- 191
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Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memoryMahmoudi, Hiwa / Windbacher, Thomas / Sverdlov, Viktor / Selberherr, Siegfried et al. | 2013
- 198
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Flexible double gate a-IGZO TFT fabricated on free standing polyimide foilMünzenrieder, Niko / Zysset, Christoph / Petti, Luisa / Kinkeldei, Thomas / Salvatore, Giovanni A. / Tröster, Gerhard et al. | 2013
- 205
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Tunnel FET with non-uniform gate capacitance for improved device and circuit level performanceAlper, C. / De Michielis, L. / Dağtekin, N. / Lattanzio, L. / Bouvet, D. / Ionescu, A.M. et al. | 2013
- 211
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Si tunneling transistors with high on-currents and slopes of 50mV/dec using segregation doped NiSi2 tunnel junctionsKnoll, L. / Schmidt, M. / Zhao, Q.T. / Trellenkamp, S. / Schäfer, A. / Bourdelle, K.K. / Mantl, S. et al. | 2013
- IFC
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Editorial Board| 2013