3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate (Englisch)
- Neue Suche nach: Oh, J. S.
- Neue Suche nach: Yang, S. D.
- Neue Suche nach: Lee, S. Y.
- Neue Suche nach: Kim, Y. S.
- Neue Suche nach: Kang, M. H.
- Neue Suche nach: Lim, S. K.
- Neue Suche nach: Lee, H. D.
- Neue Suche nach: Lee, G. W.
- Neue Suche nach: Oh, J. S.
- Neue Suche nach: Yang, S. D.
- Neue Suche nach: Lee, S. Y.
- Neue Suche nach: Kim, Y. S.
- Neue Suche nach: Kang, M. H.
- Neue Suche nach: Lim, S. K.
- Neue Suche nach: Lee, H. D.
- Neue Suche nach: Lee, G. W.
In:
SOLID STATE ELECTRONICS
;
86
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6-10
;
2013
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate
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Beteiligte:Oh, J. S. ( Autor:in ) / Yang, S. D. ( Autor:in ) / Lee, S. Y. ( Autor:in ) / Kim, Y. S. ( Autor:in ) / Kang, M. H. ( Autor:in ) / Lim, S. K. ( Autor:in ) / Lee, H. D. ( Autor:in ) / Lee, G. W. ( Autor:in )
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Erschienen in:SOLID STATE ELECTRONICS ; 86 ; 6-10
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Verlag:
- Neue Suche nach: Elsevier Science B.V., Amsterdam.
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Erscheinungsdatum:01.01.2013
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Format / Umfang:5 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 621.3 / 621.38152
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
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Datenquelle:
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- IFC
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Editorial Board| 2013