Manufacturing Challenges of GaN-on-Si HEMTs in a 200 mm CMOS Fab (Englisch)
- Neue Suche nach: Marcon, D.
- Neue Suche nach: De Jaeger, B.
- Neue Suche nach: Halder, S.
- Neue Suche nach: Vranckx, N.
- Neue Suche nach: Mannaert, G.
- Neue Suche nach: Van Hove, M.
- Neue Suche nach: Decoutere, S.
- Neue Suche nach: Marcon, D.
- Neue Suche nach: De Jaeger, B.
- Neue Suche nach: Halder, S.
- Neue Suche nach: Vranckx, N.
- Neue Suche nach: Mannaert, G.
- Neue Suche nach: Van Hove, M.
- Neue Suche nach: Decoutere, S.
In:
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
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26
, 3
;
361-367
;
2013
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Manufacturing Challenges of GaN-on-Si HEMTs in a 200 mm CMOS Fab
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Beteiligte:Marcon, D. ( Autor:in ) / De Jaeger, B. ( Autor:in ) / Halder, S. ( Autor:in ) / Vranckx, N. ( Autor:in ) / Mannaert, G. ( Autor:in ) / Van Hove, M. ( Autor:in ) / Decoutere, S. ( Autor:in )
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Erschienen in:IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING ; 26, 3 ; 361-367
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Verlag:
- Neue Suche nach: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Erscheinungsdatum:01.01.2013
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Format / Umfang:7 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 621.38152 / 621.3
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
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Datenquelle:
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