Aligned Mesopore Arrays in GaN by Anodic Etching and Photoelectrochemical Surface Etching (Englisch)
- Neue Suche nach: Schwab, M.J.
- Neue Suche nach: Chen, D.
- Neue Suche nach: Han, J.
- Neue Suche nach: Pfefferle, L.D.
- Neue Suche nach: Schwab, M.J.
- Neue Suche nach: Chen, D.
- Neue Suche nach: Han, J.
- Neue Suche nach: Pfefferle, L.D.
In:
JOURNAL OF PHYSICAL CHEMISTRY C
;
117
, 33
;
16890-16895
;
2013
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Aligned Mesopore Arrays in GaN by Anodic Etching and Photoelectrochemical Surface Etching
-
Beteiligte:Schwab, M.J. ( Autor:in ) / Chen, D. ( Autor:in ) / Han, J. ( Autor:in ) / Pfefferle, L.D. ( Autor:in )
-
Erschienen in:JOURNAL OF PHYSICAL CHEMISTRY C ; 117, 33 ; 16890-16895
-
Verlag:
- Neue Suche nach: AMERICAN CHEMICAL SOCIETY
-
Erscheinungsdatum:01.01.2013
-
Format / Umfang:6 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 541.3
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 541.3 -
Datenquelle:
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