Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique (Englisch)
- Neue Suche nach: Kusunoki, K.
- Neue Suche nach: Okada, N.
- Neue Suche nach: Kamei, K.
- Neue Suche nach: Moriguchi, K.
- Neue Suche nach: Daikoku, H.
- Neue Suche nach: Kado, M.
- Neue Suche nach: Sakamoto, H.
- Neue Suche nach: Bessho, T.
- Neue Suche nach: Ujihara, T.
- Neue Suche nach: Kusunoki, K.
- Neue Suche nach: Okada, N.
- Neue Suche nach: Kamei, K.
- Neue Suche nach: Moriguchi, K.
- Neue Suche nach: Daikoku, H.
- Neue Suche nach: Kado, M.
- Neue Suche nach: Sakamoto, H.
- Neue Suche nach: Bessho, T.
- Neue Suche nach: Ujihara, T.
In:
JOURNAL OF CRYSTAL GROWTH
;
395
;
68-73
;
2014
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique
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Beteiligte:Kusunoki, K. ( Autor:in ) / Okada, N. ( Autor:in ) / Kamei, K. ( Autor:in ) / Moriguchi, K. ( Autor:in ) / Daikoku, H. ( Autor:in ) / Kado, M. ( Autor:in ) / Sakamoto, H. ( Autor:in ) / Bessho, T. ( Autor:in ) / Ujihara, T. ( Autor:in )
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Erschienen in:JOURNAL OF CRYSTAL GROWTH ; 395 ; 68-73
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Verlag:
- Neue Suche nach: Elsevier Science B.V., Amsterdam.
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Erscheinungsdatum:01.01.2014
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Format / Umfang:6 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 548
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 548 -
Datenquelle:
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Editorial Board| 2014