Crystal polarity role in Mg incorporation during GaN solution growth (Englisch)
- Neue Suche nach: Freitas, J. A.
- Neue Suche nach: Feigelson, B. N.
- Neue Suche nach: Anderson, T. J.
- Neue Suche nach: Freitas, J. A.
- Neue Suche nach: Feigelson, B. N.
- Neue Suche nach: Anderson, T. J.
In:
JOURNAL OF CRYSTAL GROWTH
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403
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90-95
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2014
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Crystal polarity role in Mg incorporation during GaN solution growth
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Beteiligte:
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Erschienen in:JOURNAL OF CRYSTAL GROWTH ; 403 ; 90-95
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Verlag:
- Neue Suche nach: Elsevier Science B.V., Amsterdam.
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Erscheinungsdatum:01.01.2014
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Format / Umfang:6 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 548
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 548 -
Datenquelle:
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Inhaltsverzeichnis – Band 403
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- 1
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PrefaceFreitas, Jaime A. Jr. / Meissner, Elke / Paskova, Tania / Miyake, Hideto et al. | 2014
- 3
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Development of GaN wafers via the ammonothermal methodLetts, Edward / Hashimoto, Tadao / Hoff, Sierra / Key, Daryl / Male, Keith / Michaels, Mathew et al. | 2014
- 7
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Improved growth rates and purity of basic ammonothermal GaNPimputkar, S. / Kawabata, S. / Speck, J.S. / Nakamura, S. et al. | 2014
- 18
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Highly transparent ammonothermal bulk GaN substratesJiang, Wenkan / Ehrentraut, Dirk / Downey, Bradley C. / Kamber, Derrick S. / Pakalapati, Rajeev T. / Yoo, Hak Do / D’Evelyn, Mark P. et al. | 2014
- 22
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Novel alkali metal amidogallates as intermediates in ammonothermal GaN crystal growthZhang, Shiyu / Alt, Nicolas S.A. / Schlücker, Eberhard / Niewa, Rainer et al. | 2014
- 29
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Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactorBaker, Troy / Mayo, Ashley / Veisi, Zeinab / Lu, Peng / Schmitt, Jason et al. | 2014
- 32
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HVPE-GaN growth on misoriented ammonothermal GaN seedsSochacki, T. / Amilusik, M. / Lucznik, B. / Fijalkowski, M. / Weyher, J.L. / Nowak, G. / Sadovyi, B. / Kamler, G. / Kucharski, R. / Iwinska, M. et al. | 2014
- 38
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Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxyKoyama, Koji / Aida, Hideo / Kim, Seong-Woo / Ikejiri, Kenjiro / Doi, Toshiro / Yamazaki, Tsutomu et al. | 2014
- 43
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Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxyNovikov, S.V. / Powell, R.E. L. / Staddon, C.R. / Kent, A.J. / Foxon, C.T. et al. | 2014
- 48
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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seedsAmilusik, M. / Sochacki, T. / Lucznik, B. / Fijalkowski, M. / Smalc-Koziorowska, J. / Weyher, J.L. / Teisseyre, H. / Sadovyi, B. / Bockowski, M. / Grzegory, I. et al. | 2014
- 55
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Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxyYamane, Keisuke / Hashimoto, Yasuhiro / Okada, Narihito / Tadatomo, Kazuyuki et al. | 2014
- 59
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Feasibility of density and viscosity measurements under ammonothermal conditionsSteigerwald, Thomas G. / Alt, Nicolas S.A. / Hertweck, Benjamin / Schluecker, Eberhard et al. | 2014
- 66
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Structural defects in bulk GaNLiliental-Weber, Z. / dos Reis, R. / Mancuso, M. / Song, C.Y. / Grzegory, I. / Porowski, S. / Bockowski, M. et al. | 2014
- 72
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Optical and electrical properties of dislocations in plastically deformed GaNYonenaga, I. / Ohno, Y. / Yao, T. / Edagawa, K. et al. | 2014
- 77
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Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchangeWeyher, J.L. / Sochacki, T. / Amilusik, M. / Fijałkowski, M. / Łucznik, B. / Jakieła, R. / Staszczak, G. / Nikolenko, A. / Strelchuk, V. / Sadovyi, B. et al. | 2014
- 83
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Metastable nature of InN and In-rich InGaN alloysIvanov, S.V. / Shubina, T.V. / Komissarova, T.A. / Jmerik, V.N. et al. | 2014
- 90
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Crystal polarity role in Mg incorporation during GaN solution growthFreitas, Jaime A. Jr. / Feigelson, Boris N. / Anderson, Travis J. et al. | 2014
- 96
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Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapesErlekampf, J. / Seebeck, J. / Savva, P. / Meissner, E. / Friedrich, J. / Alt, N.S.A. / Schlücker, E. / Frey, L. et al. | 2014
- 105
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DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixtureKempisty, Pawel / Strak, Pawel / Sakowski, Konrad / Krukowski, Stanislaw et al. | 2014
- 110
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Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux techniqueEdgar, J.H. / Hoffman, T.B. / Clubine, B. / Currie, M. / Du, X.Z. / Lin, J.Y. / Jiang, H.X. et al. | 2014
- 114
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Vacancy–hydrogen complexes in ammonothermal GaNTuomisto, F. / Kuittinen, T. / Zając, M. / Doradziński, R. / Wasik, D. et al. | 2014
- 119
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Optical and magnetic resonance studies of Be-doped GaN bulk crystalsGlaser, E.R. / Freitas, J.A. Jr / Storm, D.F. / Teisseyre, Henryk / Boćkowski, Michal et al. | 2014
- 124
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Bulk properties of InN films determined by experiments and theoryKumar, M. / Baldissera, G. / Persson, C. / David, D.G.F. / da Silva, M.V.S. / Freitas, J.A. Jr. / Tischler, J.G. / Chubaci, J.F.D. / Matsuoka, M. / Ferreira da Silva, A. et al. | 2014
- IFC
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Editorial Board| 2014