Drain Extended Tunnel FET—A Novel Power Transistor for RF and Switching Applications (Englisch)
- Neue Suche nach: Shrivastava, M.
- Neue Suche nach: Shrivastava, M.
In:
IEEE TRANSACTIONS ON ELECTRON DEVICES
;
64
, 2
;
481-487
;
2017
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:Drain Extended Tunnel FET—A Novel Power Transistor for RF and Switching Applications
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Beteiligte:Shrivastava, M. ( Autor:in )
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Erschienen in:IEEE TRANSACTIONS ON ELECTRON DEVICES ; 64, 2 ; 481-487
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Verlag:
- Neue Suche nach: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Erscheinungsdatum:01.01.2017
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Format / Umfang:7 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 621.3 / 621
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
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Datenquelle:
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Stabilizing schemes for the minority failure bits in -based ReRAM macroUeki, Makoto et al. | 2017