High-temperature ionic and electronic resistivity of MgO- and Ta2O5- doped aluminum nitride (Englisch)
- Neue Suche nach: Yu, D.
- Neue Suche nach: Lee, E.
- Neue Suche nach: Lee, S. M.
- Neue Suche nach: Kim, J. Y.
- Neue Suche nach: Park, M. H.
- Neue Suche nach: Yu, D.
- Neue Suche nach: Lee, E.
- Neue Suche nach: Lee, S. M.
- Neue Suche nach: Kim, J. Y.
- Neue Suche nach: Park, M. H.
In:
JOURNAL- KOREAN PHYSICAL SOCIETY
;
72
, 1
;
129-137
;
2018
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:High-temperature ionic and electronic resistivity of MgO- and Ta2O5- doped aluminum nitride
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Beteiligte:Yu, D. ( Autor:in ) / Lee, E. ( Autor:in ) / Lee, S. M. ( Autor:in ) / Kim, J. Y. ( Autor:in ) / Park, M. H. ( Autor:in )
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Erschienen in:JOURNAL- KOREAN PHYSICAL SOCIETY ; 72, 1 ; 129-137
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Verlag:
- Neue Suche nach: Korean Physical Society
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Erscheinungsdatum:01.01.2018
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Format / Umfang:9 pages
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ISSN:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 530
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
DDC: 530 -
Datenquelle:
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