Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs (Englisch)
- Neue Suche nach: Kakarla, Bhagyalakshmi
- Neue Suche nach: Nida, Selamnesh
- Neue Suche nach: Mueting, Johanna
- Neue Suche nach: Ziemann, Thomas
- Neue Suche nach: Kovacevic-Badstuebner, Ivana
- Neue Suche nach: Grossner, Ulrike
- Neue Suche nach: Kakarla, Bhagyalakshmi
- Neue Suche nach: Nida, Selamnesh
- Neue Suche nach: Mueting, Johanna
- Neue Suche nach: Ziemann, Thomas
- Neue Suche nach: Kovacevic-Badstuebner, Ivana
- Neue Suche nach: Grossner, Ulrike
In:
Microelectronics and reliability
;
76
;
267-271
;
2017
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs
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Beteiligte:Kakarla, Bhagyalakshmi ( Autor:in ) / Nida, Selamnesh ( Autor:in ) / Mueting, Johanna ( Autor:in ) / Ziemann, Thomas ( Autor:in ) / Kovacevic-Badstuebner, Ivana ( Autor:in ) / Grossner, Ulrike ( Autor:in )
-
Erschienen in:Microelectronics and reliability ; 76 ; 267-271
-
Verlag:
- Neue Suche nach: Elsevier Science B.V., Amsterdam.
-
Erscheinungsdatum:01.01.2017
-
Format / Umfang:5 pages
-
ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 621.3815
- Weitere Informationen zu Dewey Decimal Classification
-
Klassifikation:
DDC: 621.3815 -
Datenquelle:
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