WiPDA-Asia 2023 : IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia : August 27-29, 2023, Hsinchu, Taiwan (Englisch)
- Neue Suche nach: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
- Weitere Informationen zu IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia:
- http://d-nb.info/gnd/1316638235
- Neue Suche nach: IEEE Power Electronics Society
- Weitere Informationen zu IEEE Power Electronics Society:
- http://d-nb.info/gnd/5080015-2
- Neue Suche nach: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
- Weitere Informationen zu IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia:
- http://d-nb.info/gnd/1316638235
- Neue Suche nach: IEEE Power Electronics Society
- Weitere Informationen zu IEEE Power Electronics Society:
- http://d-nb.info/gnd/5080015-2
2023
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ISBN:
- Konferenzband / Elektronische Ressource
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Titel:WiPDA-Asia 2023 : IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia : August 27-29, 2023, Hsinchu, Taiwan
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Weitere Titelangaben:2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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Beteiligte:IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia ( Autor:in ) / IEEE Power Electronics Society ( Sponsor:in )
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Kongress:IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia ; 2023 ; Hsinchu
WiPDA-Asia -
Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:[Piscataway, NJ]
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Erscheinungsdatum:2023
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Format / Umfang:1 Online-Ressource
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Anmerkungen:Illustrationen
Literaturangaben -
ISBN:
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DOI:
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Medientyp:Konferenzband
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Format:Elektronische Ressource
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Sprache:Englisch
- Neue Suche nach: 53.35
- Weitere Informationen zu Basisklassifikation
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Klassifikation:
BKL: 53.35 Stromrichter, Transformatoren -
Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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Charge Pump Based Gate Driver Integrated Circuit for SiC MOSFETJiang, Mao-Hong / Wu, Chan-Liang / Huang, Chung-Hsun et al. | 2023
- 1
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Switching Behavior Equivalent Circuit Model for SiC Driver ICDuan, Siang Yung / Chen, Ching Jan / Chen, Yen-Ming / Lai, Wen-Shang / Chaturvedi, Pradyumn et al. | 2023
- 1
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An Ultralow Forward Voltage SiC Trenched Junction-Pinched Barrier Rectifier (TBR)Hsu, Fu-Jen / Yen, Cheng-Tyng / Hung, Hsiang-Ting / Chang, Ting-Fu / Hu, Jia-Wei / Huang, Chih-Fang et al. | 2023
- 1
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Sinusoidally-modulated 3MHz-switching GaN stepdown converter for non-resonant 150kHz WPT applicationsSakuraba, Yutaro / Onishi, Souichi / Lee, Yonghwa / Castellazzi, Alberto et al. | 2023
- 1
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Comparison of Bidirectional Flyback and Split-Inductor Boost Converter Topologies for Photovoltaic Differential Power Processing SystemsChen, Lien-Chieh / Bagci, F. Selin / Kim, Katherine A. et al. | 2023
- 1
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A Single-Stage Electronic Lighting Driver for a Deep Ultraviolet LED Disinfection and Sterilization LampCheng, Chun-An / Lan, Long-Fu / Hou, Sheng-Hong / Lin, Cheng-Kuan et al. | 2023
- 1
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D-Mode GaN HEMT with Direct DriveHeumesser, Vanessa / Lai, Jih-Sheng / Hsieh, Hsin-Che / Hsu, Johnny / Yang, Chih-Yi / Chang, Edward Y. / Ko, Hsiu-Kuei / Liu, Wen-Hung / Lin, Yu-Min et al. | 2023
- 1
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Parametric Analysis for Filter Design in Extracting Transient Thermal Model Parameters of SiC Power ModulesFukunaga, Shuhei / Funaki, Tsuyoshi et al. | 2023
- 1
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High-frequency All SiC Improved Quadratic Boost ConverterNagpala, Lucky Angelico / Castellazzi, Alberto et al. | 2023
- 1
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Effects of Drain Field Plate Structure and Passivation Dielectrics on Breakdown Voltage of GaN MISHEMTLangpoklakpam, Catherine / Hsiao, Yi-Kai / Lin, Chun-Hsiung / Kuo, Hao-Chung et al. | 2023
- 1
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Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°CWen, Yu-Xin / Wang, Chia-Hua / Hsiao, Yi-Kai / Hung, Chia-Lung / Tsui, Bing-Yue et al. | 2023
- 1
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A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency ApplicationHung, Chia Lung / Hsiao, Yi Kai / Kuo, Hao Chung et al. | 2023
- 1
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Novel Guard Ring Structure formed by Self-align Trench Implant in SiC MOSFETYu, Wei-Chen / Hong, Chia-Long / Tu, Chang-Ching / Hsiao, Yi-Kai / Kuo, Hao-Chung et al. | 2023
- 1
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Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma TreatmentLin, Tzu-Heng / Chou, You-Shiun / Chen, Hung-Chun / Wu, Tian-Li et al. | 2023
- 1
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On-Chip Current-Mode Communication Circuits for Stackable Li-ion Battery Management System Using 0.18μm BCD HV ProcessLee, Tzung-Je / Deng, Yi-Ting et al. | 2023
- 1
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A Study on the Electrical Properties of High Voltage SiC Power MOSFET with Double Trench StructuresLee, Jang Hyeon / Kang, Ey Goo et al. | 2023
- 1
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Developing Physics-Based TCAD Model for AlGaN/GaN Power HEMTsCheng, Wei-Chih / Lin, Po-Heng / Lin, Chih-Hung / Lien, Yi-Wei / Chen, Chih-Yen / Lee, Chia-Hao / Shen, Shyh-Chiang / Liao, Chih-Cherng / Liu, Chun-Ming et al. | 2023
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The Development of 1.7kV 100A SiC MOSFET Power Module for Automotive ApplicationChiu, Po-Kai / Lin, Hsin-Han / Huan, Yuan-Cheng / Syu, Ji-Yuan / Liu, Yan-Cheng / Fan, Yan-Bo / Cheng, Yu-Hua / Chang, Chien-Wei / Hsieh, Yung-Min / Kao, Kuo-Shu et al. | 2023
- 1
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Cascode GaN HEMT Gate Driving AnalysisHeumesser, Vanessa / Lai, Jih-Sheng / Hsieh, Hsin-Che / Hsu, Johnny / Yang, Chih-Yi / Chang, Edward Y. / Liu, Ching-Yao / Chieng, Wei-Hua / Hsieh, Yueh-Tsung et al. | 2023
- 1
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On the Switching Loss of the SiC MOSFET Parasitic CapacitorsHo, Tzu-Hsuan / Chen, Yaow-Ming et al. | 2023
- 1
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A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETsChen, Quan-Han / Tsui, Bing-Yue / Chao, Der-Sheng et al. | 2023
- 1
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The development of the process for low-temperature surface carbonization of Si(111) substrate and the subsequent growth of 3C-SiC epitaxial buffer layerTsai, Pei-Chun / Huang, Jhong-Ren / Hong, Lu-Sheng et al. | 2023
- 1
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A Design Parametric Effect Study on Floating Guard Ring for 1200V SiC Power MOSFET ApplicationHung, Chia Lung / Hsiao, Yi Kai / Kuo, Hao Chung et al. | 2023
- 1
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A Monolithic E-Mode GaN Boost Converter IC with Improved Gate DriverPan, Shih-Cheng / Chen, Ching-Jan / Chen, Yen-Ming / Chaturvedi, Pradyumn et al. | 2023
- 1
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Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module designFayyaz, Asad / Li, Ying / Evans, Paul / Watson, Alan / Wheeler, Pat / Gerada, Chris et al. | 2023
- 1
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α-Ga2O3 SBD switching performance in PFC applicationBorghese, Alessandro / Castellazzi, Alberto / Irace, Andrea et al. | 2023
- 1
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Design and Control Strategy of High Voltage Power Module for Double Pulse Testing Applications of Wide Band Gap DevicesHuang, Chi-Yuan / Chen, Yaow-Ming et al. | 2023
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Demonstration of High Voltage (>2KV) GaN-on-QST power MIS-HEMTs with the Stable Dynamic On-resistance up to 1650 VLiu, Chia-Wei / Liu, Yen-Wei / Ho, Hsin-Jou / Wu, Tian-Li et al. | 2023
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Investigation of carrier lifetime behavior in the 4H-SiC homoepitaxial layerChung, Shang-Lin / Huang, Jhong-Ren / Hong, Lu-Sheng et al. | 2023
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Analysis of Factor Impacts on On-resistance for Power MOSFET Layout Design with Fully Automatic FlowLiu, Lingge / Zuo, Wangge / Zhao, Tian / Lan, Bijian / Zhang, Jingxiao / Wan, Jing et al. | 2023
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3D Simulation Platform for Semiconductor Crystal Growth Based on Taiwanese Companies RequirementsDezfoli, Amir R. A. et al. | 2023
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Analysis and Comparison of LLC Resonance Circuits for Wide Band Gap Semiconductor ComponentChen, Yu-Kai / Chang, Tzu-Hsiang / Luo, Chien-Cheng / Hsiao, Chung-En / Chen, Hung-Yu et al. | 2023
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Why Are Conventional Si MOSFETs Better Than SiC and GaN in Low Power Applications?Glashauser, Michael / Kreutzer, Otto et al. | 2023
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Substrate Bias Effect of 28 nm-node HK/MG nMOSFETs with DPN Temperature TreatmentsChao, Shou-Yen / Wang, Ming-Han / Zheng, Mei-Yuan / Kuo, Jin-An / Lan, Wen-How / He, Yuan-Jheng / Wang, Mu-Chun et al. | 2023
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Transparent ITO gate p-GaN/AlGaN/GaN UV photodetector with high responsivity and high PDCRHan, Zhanfei / Li, Xiangdong / Wang, Hongyue / Liu, Yuebo / Wang, Meng / Yuan, Jiahui / Wang, Junbo / Yang, Weitao / You, Shuzhen / Zhang, Jincheng et al. | 2023
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Comparison between Experimental and FEM Simulation Results of Differential-Mode Noise in SiC MOSFET based Full-Bridge Power ModuleDeepankar / Ibuchi, Takaaki / Funaki, Tsuyoshi / Sakai, Hiroto / Miyazaki, Tatsuya / Okawauchi, Yuta et al. | 2023
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Comparisons of Performance and Reliability in 4H-SiC Tri-gate and Planar MOSFETsHu, Jia-Wei / Lu, Tsung-Yuan / Kang, Kuan-Min / Huang, Chih-Fang / Chen, Bang-Ren / Wu, Tian-Li et al. | 2023
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Comparison of Drain Current Transient Characteristics of AlGaN/GaN HEMTs in the Linear and Saturation Regions after OFF-state StressCho, Chih-Wei / Hsin, Yue-Ming et al. | 2023
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Greetings from General Chair| 2023
- 9
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Tutorials| 2023
- 12
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Keynotes| 2023
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WiPDA Asia 2023 Cover Page| 2023
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Table of Contents| 2023