Advanced metallization and interconnect systems for ULSI applications in 1996 : proceedings of the conference held October 1 - 3, 1996, in Boston, Massachusetts, sponsored by Continuing Education in Engineering, University Extension, University of California at Berkeley, California, U.S.A., a parallel session of the conference was held from October 23 - 24, 1996, in Tokyo, Japan (Englisch)
- Neue Suche nach: Conference on Advanced Metallization and Interconnect Systems for ULSI Applications
- Weitere Informationen zu Conference on Advanced Metallization and Interconnect Systems for ULSI Applications:
- http://d-nb.info/gnd/5305509-3
- Neue Suche nach: University of California Berkeley, Continuing Education in Engineering
- Weitere Informationen zu University of California Berkeley, Continuing Education in Engineering:
- http://d-nb.info/gnd/5016345-0
- Neue Suche nach: Havemann, Robert H.
- Neue Suche nach: Conference on Advanced Metallization and Interconnect Systems for ULSI Applications
- Weitere Informationen zu Conference on Advanced Metallization and Interconnect Systems for ULSI Applications:
- http://d-nb.info/gnd/5305509-3
- Neue Suche nach: University of California Berkeley, Continuing Education in Engineering
- Weitere Informationen zu University of California Berkeley, Continuing Education in Engineering:
- http://d-nb.info/gnd/5016345-0
1997
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ISBN:
- Konferenzband / Print
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Titel:Advanced metallization and interconnect systems for ULSI applications in 1996 : proceedings of the conference held October 1 - 3, 1996, in Boston, Massachusetts, sponsored by Continuing Education in Engineering, University Extension, University of California at Berkeley, California, U.S.A., a parallel session of the conference was held from October 23 - 24, 1996, in Tokyo, Japan
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Beteiligte:
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Kongress:Conference on Advanced Metallization and Interconnect Systems for ULSI Applications ; 13 ; 1996 ; Boston, Mass.
Conference on Advanced Metallization and Interconnect Systems for ULSI Applications ; 13 ; 1996 ; Tokyo -
Erschienen in:
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Verlag:
- Neue Suche nach: Materials Research Society
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Erscheinungsort:Pittsburgh, Pa.
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Erscheinungsdatum:1997
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Format / Umfang:xvi, 608 p
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Anmerkungen:24 cm
ill
Includes bibliographical references and indexes -
ISBN:
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Medientyp:Konferenzband
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 53.56
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 621.39/5
- Weitere Informationen zu Dewey Decimal Classification
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Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
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Scaling of High-Performance InterconnectsBohr, M. T. / Materials Research Society et al. | 1997
- 13
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The Chemical Vapor Deposition of Aluminum for Interconnect and Via Applications: An Integration OverviewFiordalice, R. / Ong, T. / Garcia, S. / Farkas, J. / Materials Research Society et al. | 1997
- 23
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Overview of High-Pressure Aluminum Processing for ULSI InterconnectsDixit, G. A. / Materials Research Society et al. | 1997
- 29
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Growth Chemistry of DimethylaluminumhydrideWillis, B. G. / Jensen, K. F. / Materials Research Society et al. | 1997
- 35
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Application of Aluminum CVD to Damascene InterconnectsSugai, K. / Okada, N. / Shinzawa, T. / Hayashi, Y. / Materials Research Society et al. | 1997
- 43
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Fluorine Termination Effect on Al-CVDJu Hyuck Chung / Matsuhashi, H. / Gotoh, A. / Yokoyama, M. / Materials Research Society et al. | 1997
- 51
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High-Pressure Aluminum Via-Fill for ULSI Interconnect Using a Liquid TransducerJongste, J. F. / Li, X. / Lokker, J. P. / Janssen, G. C. A. M. / Materials Research Society et al. | 1997
- 57
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The Chemical Vapor Deposition of Aluminum: Nucleation of CVD Ti and TiNArena, C. / Farjot, T. / Moussavi, M. / Perroud, L. / Materials Research Society et al. | 1997
- 63
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Process for Obtaining Copper-Alloyed Chemically Vapor-Deposited Aluminum InterconnectsVenkatraman, R. / Marsh, R. / Weitzman, E. / Rogers, B. / Materials Research Society et al. | 1997
- 71
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Blanket Al MOCVD for Interconnects Monitored by Infrared Spectroscopic EllipsometryWeidner, M. / Weidner, G. / Hausmann, A. / Ritter, G. / Materials Research Society et al. | 1997
- 81
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Improvement of Electromigration in Al Plug Interconnects by Reduction in Flux DivergenceHong, Q.-Z. / Hsu, W.-Y. / Ting, L. / Lee, C. / Materials Research Society et al. | 1997
- 89
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The Linewidth Dependence of Microstructure in Damascene-Fabricated Aluminum InterconnectsBesser, P. R. / Sanchez, J. E. / Field, D. / Materials Research Society et al. | 1997
- 97
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Combined Effects of Stress- and Electromigration-Induced Void GrowthSchroeder, H. / Beckers, D. / Materials Research Society et al. | 1997
- 105
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Planarized Metallization by Blanket Deposition of PACVD Aluminum for ULSIKim, B.-Y. / Kim, D.-C. / Lee, B.-I. / Joo, S.-K. / Materials Research Society et al. | 1997
- 111
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Chemical Vapor Deposition of Aluminum from Dimethylaluminumhydride Dimethylethylamine (DMAH-DMEA) and Dimethylethylaminealane (DMEAA)Taylor, C. J. / Roberts, J. T. / Gladfelter, W. / Franciosi, A. / Materials Research Society et al. | 1997
- 117
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Effect of Interface Reaction and Wetting Properties on Al Reflow CharacteristicsShingubara, S. / Kotani, H. / Ando, K. / Sakaue, H. / Materials Research Society et al. | 1997
- 123
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The Effect of Operating Power on Sputtered Titanium and Aluminum Film PropertiesBiberger, M. / Dulkin, A. / Griswold, J. / Rumer, M. / Materials Research Society et al. | 1997
- 129
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Surface Morphology Improvement of Aluminum Thin Films Deposited by Plasma-Assisted Chemical Vapor DepositionKim, D.-C. / Kim, B.-Y. / Lee, B.-I. / Joo, S.-K. / Materials Research Society et al. | 1997
- 135
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Characterization of Hot Aluminum Deposition Process and the Influence of Different Substrates on Plug FormationCazzaniga, F. / Riva, L. / Queirolo, G. / Materials Research Society et al. | 1997
- 141
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Evaluation of EM Characteristics on the Metal Interconnects Depending on the DopantsJeong, C. / Kim, E. / Shim, S. / Cho, K. / Materials Research Society et al. | 1997
- 149
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Cu Metallization with Low-Pressure Long-Throw Sputtering Method for Submicron Damascene WiringSaito, T. / Fukuda, N. / Yamaguchi, H. / Hirasawa, S. / Materials Research Society et al. | 1997
- 155
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Copper Reflow Processing Times as a Function of Film MicrostructureFriedrich, L. J. / Gardner, D. S. / Dew, S. K. / Brett, M. J. / Materials Research Society et al. | 1997
- 161
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Comparison of PVD and CVD Copper Interconnects Patterned by RIEGossner, T. / Bertz, A. / Markert, M. / Roebor, J. / Materials Research Society et al. | 1997
- 169
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Profile Improving of Electroless Cu Metallization in Narrow TrenchesLopatin, S. / Shacham-Diamand, Y. / Dubin, V. / Pellerin, J. / Materials Research Society et al. | 1997
- 177
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The Deposition Rate for Cu-CVD with Cu(hfac)(tmvs)Kobayashi, A. / Sekiguchi, A. / Ikeda, K. / Okada, O. / Materials Research Society et al. | 1997
- 185
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Gap Filling with High-Current Pulsed Arc Evaporation for Copper-Metallized Integrated CircuitsWenzel, C. / Klimes, W. / Siemroth, P. / Schuelke, T. / Materials Research Society et al. | 1997
- 191
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Characterization of Electroplated Copper Solder Bumps for Flip-Chip ApplicationsChungpaiboonpatana, S. / Beaudoin, S. / Cale, T. / Pillote, C. / Materials Research Society et al. | 1997
- 199
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Feasibility of TiSi~2 and CoSi~2 for Subquarter Micron Processes: Problems of the Etch SelectivityBaklanov, M. R. / Vanhaelemeersch, S. / Maex, K. / Materials Research Society et al. | 1997
- 203
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A Comparison of C49 to C54 Conversion Kinetics in Ti and Bilayer Ti/Mo Silicides Using Electrical Resistivity Measurements on Single Submicron LinesSaenger, K. L. / Cabral, C. / Clevenger, L. A. / Roy, R. A. / Materials Research Society et al. | 1997
- 211
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Selective Rapid Thermal Chemical Vapor Deposition of Titanium Disilicide on Boron-Implanted Silicon (100) WafersWeintraub, C. / Gladden, D. B. / Oeztuerk, M. C. / Batchelor, D. / Materials Research Society et al. | 1997
- 217
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Structural Analysis on Ultralow Resistivity p^+ ContactsSuguro, K. / Murakoshi, A. / Materials Research Society et al. | 1997
- 223
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Electrical Properties in Metal/Si~1~-~xGe~x/Si(100) ContactsZaima, S. / Kojima, J. / Shinoda, H. / Yasuda, Y. / Materials Research Society et al. | 1997
- 229
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A Process to Incorporate CVD TiN as Barriers for Quarter Micron Contacts with High-Pressure Extruded Al AlloyHsu, W.-Y. / Dixit, G. / Lu, J.-P. / Hong, Q.-Z. / Materials Research Society et al. | 1997
- 237
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Ionized Metal Depositions for ULSI InterconnectOng, T. P. / Fiordalice, R. / Garcia, S. / Chuang, H. / Materials Research Society et al. | 1997
- 245
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Characteristics of CVD Ternary Refractory Nitride Diffusion BarriersFleming, J. G. / Smith, P. M. / Custer, J. S. / Roherty-Osmun, E. / Materials Research Society et al. | 1997
- 253
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Self-Aligned Barrier Layer Formation for Fully Self-Aligned Metallization MOSFETMatsuhashi, H. / Gotoh, A. / Yokoyama, M. / Masu, K. / Materials Research Society et al. | 1997
- 261
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Modeling of Low Pressure Sputter Deposition of Metal Liners for Subhalf Micron TechnologyFang, C. C. / Joshi, R. V. / Prasad, V. / Ouyang, C. / Materials Research Society et al. | 1997
- 269
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A New Method for Processing Titanium Nitride-Based Barrier Films Through Thermal Decomposition of TDMAT Combined with Postdeposition Silane AnnealLu, J. P. / Hsu, W. Y. / Hong, Q. Z. / Dixit, G. A. / Materials Research Society et al. | 1997
- 277
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The Effect of Annealing Temperature on WN~x Morphology and Diffusion Barrier IntegrityGalewski, C. J. / Gadgil, P. N. / Matthysse, L. D. / Sans, C. A. / Materials Research Society et al. | 1997
- 283
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Characteristics of Photo-Assisted LPCVD Tungsten Nitride Films for ULSI DRAM ApplicationsByung Lyul Park / Jung Min Ha / Ko, D.-H. / Yoo, B.-Y. / Materials Research Society et al. | 1997
- 289
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Control of Gas-Phase Particle Growth in MOCVD of TiN from TDEAT and AmmoniaCollins, J. / McInerney, J. / Tang, H. / Roberts, B. / Materials Research Society et al. | 1997
- 297
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Resistivity, Step Coverage, and Barrier Property of TiN/Ti Films Prepared by Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor DepositionKim, J.-S. / Jang, S.-S. / Lee, W.-J. / Materials Research Society et al. | 1997
- 305
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TEM Analysis of the Spiking Mechanism in Al-Filled ContactsBarth, H. J. / Cerva, H. / Klueppel, V. / Materials Research Society et al. | 1997
- 313
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Thermal Stability of TiN Diffusion Barrier Under High Thermal Stress in W-Plug Common ContactChoi, S. / Yoo, B.-Y. / Lee, H.-D. / Lee, K.-W. / Materials Research Society et al. | 1997
- 319
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Low-Temperature PECVD of Titanium and Titanium Nitride Thin FilmsHillman, J. T. / Ameen, M. S. / Faguet, J. / Webb, D. / Materials Research Society et al. | 1997
- 327
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Simulation of Ionized Sputter DepositionBackhouse, C. / Poon, N. / Dew, S. K. / Brett, M. J. / Materials Research Society et al. | 1997
- 335
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Linking Macroscale and Microscale CVD SimulationsRodgers, S. T. / Balakrishna, A. / Jensen, K. F. / Materials Research Society et al. | 1997
- 343
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A Study of Step Coverage Morphologies of SiH~4-WSi~x and SiH~2Cl~2-WSi~x for ULSI TechnologiesOzkan, C. S. / Moinpour, M. / Li, J. / Materials Research Society et al. | 1997
- 349
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A Reliable PVD Ti and TDEAT MOCVD TiN Barrier Metal for Advanced MetallizationFang Hong Gn / Li, Q. / Chan, L. / Chooi, S. / Materials Research Society et al. | 1997
- 355
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Effects of MOCVD-TiN on Al Reflectivity in High-Temperature Al ProcessKim, Y. J. / Seo, H. S. / Kim, H. D. / Yu, S. H. / Materials Research Society et al. | 1997
- 361
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Nanoscale Intermetallic Diffusion Barrier Formation in Al-.5CuMc Carthy, J. M. / Materials Research Society et al. | 1997
- 367
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A Diffusion Barrier Property of High-Quality MOCVD TiN for Cu MetallizationKim, J.-H. / Park, S.-J. / Beh, N.-J. / Kim, S.-H. / Materials Research Society et al. | 1997
- 373
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A New Single-Source Precursor for Titanium Nitride CVDSun, Y.-M. / Fitts, B. / Whaley, S. / Sweeney, C. / Materials Research Society et al. | 1997
- 379
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Optimization of Antireflective Coating TiN for Submicron Aluminum Interconnect TechnologyXie, J. H. / Nguyen, D. / Materials Research Society et al. | 1997
- 385
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Monte Carlo Simulation on the Step Coverage and Residual Chlorine of CVD-TiN FilmsShimogaki, Y. / Akiyama, Y. / Ohkubo, T. / Saito, T. / Materials Research Society et al. | 1997
- 393
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Low- and High-Dielectric Constant Thin Films for Integrated Circuit ApplicationsGutmann, R. J. / Gill, W. N. / Lu, T. M. / McDonald, J. F. / Materials Research Society et al. | 1997
- 401
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High-k Dielectrics for DRAM ApplicationsFurumura, Y. / Materials Research Society et al. | 1997
- 409
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Effect of RTO-Treated TiN on the Thermal Stability of Ru/TiN/Ti/poly-Si/SiO~2/Si StructuresHong, K. / Sun, H. J. / Yu, S. H. / Kim, J. C. / Materials Research Society et al. | 1997
- 417
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Diamondlike Carbon Materials as Low-k DielectricsGrill, A. / Patel, V. / Cohen, S. A. / Edelstein, D. C. / Materials Research Society et al. | 1997
- 423
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Homogeneous and Multilayer Low-k Interlevel Dielectric Architectures for Capacitance ReductionJain, M. K. / Nag, S. / Dixit, G. A. / Luttmer, J. D. / Materials Research Society et al. | 1997
- 429
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A Method for Assessing the Mechanical Reliability of Low-k Polymeric Dielectric MaterialsShaffer, E. O. / Townsend, P. H. / Im, J.-H. / Materials Research Society et al. | 1997
- 437
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MOCVD of Aluminum and Copper on Teflon-AFSutcliffe, R. / Martini, D. / Pavlica, D. / Kelber, J. / Materials Research Society et al. | 1997
- 449
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Integration of Perfluorocyclobutane (PFCB)Case, C. B. / Case, C. J. / Kornblit, A. / Mills, M. E. / Materials Research Society et al. | 1997
- 455
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Nanoporous Silica for Dielectric Constant Less Than 2Ramos, T. / Roderick, K. / Maskara, A. / Smith, D. M. / Materials Research Society et al. | 1997
- 463
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Porous Xerogel Films as Ultralow Permittivity Dielectrics for ULSI Interconnect ApplicationsJin, C. / List, S. / Lee, W. W. / Lee, C. / Materials Research Society et al. | 1997
- 471
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Lowering of Intralevel Capacitance Using Air Gap StructuresFleming, J. G. / Roherty-Osmun, E. / Farino, A. J. / Materials Research Society et al. | 1997
- 479
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Is Interconnect Joule Heating a Real Reliability Threat?Shih, W.-Y. / Levine, J. / Chang, M. / Materials Research Society et al. | 1997
- 485
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The Impact of RuO~2 Metallic Contacts on the Structural and Electrical Properties of Pb(Zr,Ti)O~3 FilmsWang, Q. / Yang, K.-A. / Lim, T.-H. / Polla, D. / Materials Research Society et al. | 1997
- 491
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A New Technique for Preparing BST Thin FilmsDing, A. L. / Chan, K. T. / He, X. Y. / Qi, B. / Materials Research Society et al. | 1997
- 499
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Etch Stop and Electrical Properties of Si-Containing Diamondlike CarbonSaenger, K. L. / Grill, A. / Schrott, A. G. / Patel, V. / Materials Research Society et al. | 1997
- 505
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Electron-Beam Curing of Siloxane SOG for Nonetchback ProcessYang, J. J. / Choi, D. K. / Forester, L. / Ross, M. / Materials Research Society et al. | 1997
- 511
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Microloading in LPCVD: An Integrated Simulation ApproachGobbert, M. K. / Merchant, T. P. / Cale, T. S. / Borucki, L. J. / Materials Research Society et al. | 1997
- 519
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Overview of Chemical Mechanical Polishing of W for Advanced Microelectronics ApplicationsYu, C. / Myers, T. / Streinz, C. / Materials Research Society et al. | 1997
- 525
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Minimizing Within Die Nonuniformity in CMP by Optimizing Polishing Parameters and ConsumablesGrillaert, J. / Meynen, H. / Waeterloos, J. / Coenegrachts, B. / Materials Research Society et al. | 1997
- 531
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Von Mises Stress in CMP ProcessesWang, D. / Beaudoin, S. / Cale, T. / Lee, J. / Materials Research Society et al. | 1997
- 539
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Chemical Mechanical Polishing of Polymers for Interlayer Dielectric ApplicationsPermana, D. / Murarka, S. P. / Lee, M. G. / Beilin, S. I. / Materials Research Society et al. | 1997
- 547
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Copper CMP Evaluation: Slurry Chemical Effect on PlanarizationRomagna, F. / Febvre, D. / Fayolle, M. / Materials Research Society et al. | 1997
- 555
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High-Resolution Profilometry for CMP Process ControlSchneir, J. / Jobe, R. / Tsai, V. / Samsavar, A. / Materials Research Society et al. | 1997
- 561
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W CMP Consumables Evaluation - Electrical Results and End Point DetectionSicurani, E. / Fayolle, M. / Gobil, Y. / Morand, Y. / Materials Research Society et al. | 1997
- 567
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CMP Consumables Manufacturability Study: Polish Pad Effect for 8" Wafer 0.5 m CMOS TechnologyShin Hwa Li / Ling, J. / Spinner, C. / Materials Research Society et al. | 1997
- 573
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Integration of SOG Etchback and CMP for Multilevel InterconnectionJang, S. M. / Chang, C. L. / Shih, T. / Yu, C. H. / Materials Research Society et al. | 1997
- 579
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TEOS CMP with a Multiheaded Tool: Head to Head Problems and Possible SolutionsMendonca, J. / Kim, I. / Schlueter, J. / Karlsrud, C. / Materials Research Society et al. | 1997
- 585
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The Effect of Slurry Chemistry on Both Blanket and Patterned CMP PerformanceStreinz, C. / Myers, T. / Yu, C. / Materials Research Society et al. | 1997
- 591
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Controlling Removal Rate Through Manipulation of Pad Cut Rate and Surface RoughnessHolzapfel, P. / Murella, K. / Schlueter, J. / Materials Research Society et al. | 1997
- 597
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Planarity Characterization of ICP High-Density Plasma CVD and CMP for 0.35 m CMOS TechnologyYota, J. / Brango, M. R. / Materials Research Society et al. | 1997