62nd DRC : Device Research Conference : conference digest : June 21-23, 2004, University of Notre Dame, Notre Dame, Indiana (Englisch)
- Neue Suche nach: Device Research Conference
- Neue Suche nach: Institute of Electrical and Electronics Engineers
- Neue Suche nach: IEEE Electron Devices Society
- Neue Suche nach: Device Research Conference
- Neue Suche nach: Institute of Electrical and Electronics Engineers
- Neue Suche nach: IEEE Electron Devices Society
2004
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ISBN:
- Konferenzband / Elektronische Ressource
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Titel:62nd DRC : Device Research Conference : conference digest : June 21-23, 2004, University of Notre Dame, Notre Dame, Indiana
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Weitere Titelangaben:Device Research Conference, conference digest
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Beteiligte:
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Kongress:Device Research Conference ; 62nd
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:Piscataway, N.J
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Erscheinungsdatum:2004
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Format / Umfang:1 Online-Ressource (xiv, 247 pages)
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Anmerkungen:illustrations
"IEEE Catalog Number: 04TH8724
Includes bibliographical references and author index -
ISBN:
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Medientyp:Konferenzband
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis Konferenzband
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
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62nd DRC - Device Research Conference - Late News Papers 2004 - Cover| 2004
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Copyright| 2004
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Breaker page| 2004
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Plenary Session| 2004
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SESSION I. PLENARY SESSIONIEEE Electron Devices Society et al. | 2004
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Table of contents [Late News Papers 2004]| 2004
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215W pulsed class A UHF power amplification based on SiC bipolar technologyChih-Fang Huang, / Perez, I. / Feng Zhao, / Torvik, J. / Irwin, R. / Torvik, K. / Abrhaley, F. / Van Zeghbroeck, B. et al. | 2004
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Gallium nitride electronics: Watt is the limit? [summary of GaN semiconductor devices]Mishra, U.K. et al. | 2004
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A high performance photodetector using a novel drift dominated structure in defected materialsSun, Y. / Yulius, A. / Woodall, J.M. et al. | 2004
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Precision engineered semimetal-semiconductor diodes for mm-wave and THz rectifiersZimmerman, J. / Brown, E. / Gossard, A. et al. | 2004
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The transistor: from Lillienfield to Landauer, to...? [transistor scaling limits]Lundstrom, M. et al. | 2004
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Electronics anywhere [TFT and display technology examples]Jackson, T. et al. | 2004
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Solution processed OTFTs with 1 cm/sup 2//V-s mobilityChung-Chen Kuo, / Payne, M. / Anthony, J.E. / Jackson, T.N. et al. | 2004
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Solution Processed OTFTs with 1 cm^2/V-s MobilityKuo, C.-C. / Payne, M. / Anthony, J. E. / Jackson, T. N. / IEEE et al. | 2004
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Current enhancement in regioregular poly(thiophene) thin film transistorsChabinyc, M.L. / Jeng-Ping Lu, / Salleo, A. / Street, R.A. et al. | 2004
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Session II.A. Scaling Silicon| 2004
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275 GHz f~M~A~X, 220 GHz f~T AlSb/InAs HEMT TechnologyTsai, R. / Boos, J. B. / Bennett, B. R. / Langel, M. / Grundbacher, R. / Namba, C. / Liu, P. H. / Lee, J. / Barsky, M. / Gutierrez-Aitken, A. et al. | 2004
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275 GHz f/sub MAX/, 220 GHz f/sub T/ AlSb/InAs HEMT technologyTsai, R. / Boos, J.B. / Bennett, B.R. / Lange, M. / Grundbacher, R. / Namba, C. / Liu, P.H. / Lee, J. / Barsky, M. / Gutierrez, A. et al. | 2004
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Nanoparticle floating gate flash memoriesBanerjee, S. / Kim, D. / Kim, T. / Weltzer, L. / Liu, Y. / Tang, S. / Palard, M. et al. | 2004
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Planarized InP/InGaAs heterojunction bipolar transistors with f/sub MAX/ > 500 GHzSawdai, D. / Chang, P.C. / Gambin, V. / Zeng, X. / Yamamoto, J. / Loi, K. / Leslie, G. / Barsky, M. / Gutierrez-Aitken, A. / Oki, A. et al. | 2004
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Planarized InP/InGaAs Heterojunction Bipolar Transistors with f~m~a~x > 500 GHzSawdai, D. / Chang, P. C. / Gambin, V. / Zeng, X. / Yamamoto, J. / Loi, K. / Leslie, G. / Barsky, M. / Gutierrez-Aitken, A. / Oki, A. et al. | 2004
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N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]Li, H.-J. / Pompl, T. / Young, C. / Rhoad, T. / Saulters, J. / Peterson, J. / Gardner, M. / Brown, G.A. / Bersuker, G. / Zeitzoff, P.M. et al. | 2004
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Relaxation of FN stress induced V/sub th/ shift at NMOSFETs with HfSiON gate dielectric and TiN gate electrodeRino Choi, / Byoung Hun Lee, / Matthews, K. / Sim, J.H. / Bersuker, G. / Larson, L. / Lee, J.C. et al. | 2004
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A novel surface passivation process for HfO/sub 2/ Ge MOSFETsNan Wu, / Qingchun Zhang, / Chunxiang Zhu, / Chan, D.S.H. / Li, M.F. / Balasubramanian, N. / Du, A.Y. / Chin, A. / Sin, J.K.O. / Kwong, D.-L. et al. | 2004
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Low workfunction fully silicided gate on SiO/sub 2//Si and LaAlO/sub 3//GOI n-MOSFETsYu, D.S. / Chin, A. / Hung, B.F. / Chen, W.J. / Zhu, C.X. / Li, M.-F. / Zhu, S.Y. / Kwong, D.L. et al. | 2004
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Electrical properties of p- and n-type silicon nanowiresYanfeng Wang, / Cabassi, M. / Tsung-Ta Ho, / Kok-Keong Lew, / Redwing, J. / Mayer, T. et al. | 2004
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Impact of reducing RTA temperature on sub-10nm ultra-thin body SOIJong-Heon Yang, / Jihun Oh, / Won-ju Cho, / Chang-Geun Ahn, / Kiju Im, / In-Bok Baek, / Park, J. / Seongjae Lee, et al. | 2004
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Vertical tunnel diodes on high resistivity siliconYan Yan, / Jialin Zhao, / Qingmin Liu, / Wei Zhao, / Seabaugh, A. et al. | 2004
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Session II.B. Widegap Devices| 2004
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High power AlGaN/GaN heterojunction FETs for base station applicationsAndo, Y. / Okamoto, Y. / Nakayama, T. / Inoue, T. / Hataya, K. / Miyamoto, H. / Senda, M. / Hirata, K. / Kosaki, M. / Shibata, N. et al. | 2004
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Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTsChini, A. / Buttari, D. / Coffie, R. / Shen, L. / Palacios, T. / Heikman, S. / Chakraborty, A. / Keller, S. / Mishra, U.K. et al. | 2004
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Linearity performance of GaN HEMTs with field platesWu, Y.-F. / Saxler, A. / Wisleder, T. / Moore, M. / Smith, R.P. / Sheppard, S. / Chavarkar, P.M. / Parikh, P. et al. | 2004
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Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTsYu, H. / McCarthy, L. / Rajan, S. / Keller, S. / Denbaars, S.P. / Speck, J.S. / Mishra, U.K. et al. | 2004
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Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivationShen, L. / Buttari, D. / Heikman, S. / Chini, A. / Coffie, R. / McCarthy, L. / Chakraborty, A. / Keller, S. / DenBaars, S.P. / Mishra, U.K. et al. | 2004
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Use of multichannel heterostructures to improve the access resistance and f/sub T/ linearity in GaN-based HEMTsPalacios, T. / Chini, A. / Buttari, D. / Heikman, S. / Keller, S. / Denlaars, S.P. / Mishra, U.K. et al. | 2004
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Influence of the heterostructure design on noise figure of AlGaN/GaN HEMTsSanabria, C. / Xu, H. / Palacios, T. / Chakraborty, P. / Heikman, S. / Mishra, U.K. / York, R.A. et al. | 2004
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GaN based piezo sensorsNeuburger, M. / Zimmermann, T. / Benkart, P. / Kunze, M. / Daumiller, I. / Dadgar, A. / Krost, A. / Kohn, E. et al. | 2004
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10 kV, 123 m/spl Omega/-cm/sup 2/ 4H-SiC power DMOSFETsSei-Hying Ryu, / Krishnaswami, S. / O'Loughlin, M. / Richmond, J. / Agarwal, A. / Palmour, J. / Heffier, A.R. et al. | 2004
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Session III. Poster Session| 2004
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Direct measurements of the AC performance of carbon nanotube field effect transistorsSingh, D.V. / Jenkins, K.A. et al. | 2004
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Novel self-defined field emission transistors with PECVD-grown carbon nano-tubes on silicon substratesKoohsorkhi, J. / Hoseinzadegan, H. / Mohajerzadeh, S. / Robertson, M.D. et al. | 2004
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Fabrication of complimentary single-electron inverter in single-wall carbon nanotubesTsuya, D. / Suzuki, M. / Aoyagi, Y. / Ishibashi, K. et al. | 2004
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a-Si:H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substratesNichols, J.A. / Jackson, T.N. / Lu, M.H. / Hack, M. et al. | 2004
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Study of subthreshold electron mobility behavior in SOI-MESFETsKhan, T. / Vasileska, D. / Thornton, T.J. et al. | 2004
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A combined model for Si-based resonant interband tunneling diodes grown on SOINiu Jin, / Dongmin Liu, / Sung-Yong Chung, / Ronghua Yu, / Wu Lu, / Berger, P.R. / Thompson, P.E. et al. | 2004
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Simulation of interface roughness in DGMOSFETs using non-equilibrium Green's functionsFonseca, J. / Kaya, S. et al. | 2004
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C/sub bc/ reduction in InP heterojunction bipolar transistor with selectively implanted collector pedestalYingda Dong, / Griffith, Z. / Dahlstrom, M. / Rodwell, M.J.W. et al. | 2004
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A new two-step recess technology using SiN/sub x/ passivation and Pt-buried gate process and its application to 0.15 /spl mu/m Al/sub 0.6/InAs/In/sub 0.65/GaAs HEMTsDae-Hyun Kim, / Kang-Min Lee, / Jae-Hak Lee, / Kwang-Seok Seo, et al. | 2004
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Planar device isolation for InP based DHBTsParthasarathy, N. / Dong, Y. / Scott, D. / Urteaga, M. / Rodwell, M.J.W. et al. | 2004
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Shape engineering of dipole-coupled nanomagnets for magnetic logic devicesImre, A. / Csaba, G. / Ling Zhou, / Orlov, A. / Bernstein, G.H. / Porod, W. / Metlushko, V. et al. | 2004
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Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTsPalacios, T. / Rajan, S. / Shen, L. / Chakraborty, A. / Heikman, S. / Keller, S. / DenBaars, S.P. / Mishra, U.K. et al. | 2004
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A novel program-erasable capacitor using high-/spl kappa/ AlN dielectricLai, C.H. / Ma, M.W. / Cheng, C.F. / Chin, A. / McAlister, S.P. / Zhu, C.X. / Li, M.F. / Kwong, D.L. et al. | 2004
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Low noise GaAs-based avalanche photodiodes for long wavelength applicationsNg, B.K. / David, J.P.R. / Soong, W.M. / Ng, J.S. / Tan, C.H. / Liu, H.Y. / Hopkinson, M. / Robson, P.N. et al. | 2004
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Resonant tunneling quantum dot infrared photodetector (RT-QDIP): separating dark current and photocurrentSu, X.H. / Stiff-Roberts, A.D. / Chakrabarti, S. / Singh, J. / Bhattacharya, P. et al. | 2004
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An organic thin-film transistor with photolithographically patterned top contacts and active layerGu, G. / Kane, M.G. / Doty, J.E. / Firester, A.H. et al. | 2004
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Directly lithographic top contacts for pentacene organic thin-film transistorsKuo, C.C. / Jackson, T.N. et al. | 2004
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Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of germaniumHekmatshoar, B. / Mohajerzadeh, S. / Shahrjerdi, D. / Robertson, M.D. et al. | 2004
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Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates [LED display applications]Long, K. / Gleskova, H. / Wagner, S. / Sturm, J.C. et al. | 2004
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Conductive copper patterning by nanotransfer printingFelmet, K. / Yangming Sun, / Yueh-Lin Loo, et al. | 2004
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Single-electron-transistor behavior in deep sub-0.1 /spl mu/m planar-doped-barrier FETsPesic, I. / Mutlu, A. / Gunther, N. / Rahman, M. / Schulze, J. / Hansch, W. / Eisele, I. et al. | 2004
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Simulation study of tunneling devices with quantum confinement in source and drainKatayama, Y. / Laux, S.E. et al. | 2004
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A floating gate single electron memory device with Al/sub 2/O/sub 3/ tunnel barriersYadavalli, K.K. / Anderson, N.R. / Orlova, T.A. / Orlov, A.O. / Snider, G.L. et al. | 2004
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Hot carrier reliability of HfSiON NMOSFETs with poly and TiN metal gateSim, J.H. / Lee, B.H. / Choi, R. / Matthews, K. / Kwong, D.L. / Larson, L. / Tsui, P. / Bersuker, G. et al. | 2004
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Threshold voltage instability of ultra-thin HfO/sub 2/ NMOSFETs: characteristics of polarity dependencesSe Jong Rhee, / Chang Yong Kang, / Young Hee Kim, / Chang Seok Kang, / Hag-Ju Cho, / Rino Choi, / Chang Hwan Choi, / Akbar, M.S. / Lee, J.C. et al. | 2004
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Polar heterostructure for multi-function devices: theoretical studiesYuh-Renn Wu, / Singh, J. et al. | 2004
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Polymeric substrate microcrystalline-silicon strain sensorLisong Zhou, / Jackson, T. et al. | 2004
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Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well dopingKoester, S.J. / Saenger, K.L. / Chu, J.O. / Ouyang, Q.C. / Ott, J.A. / Canaperi, D.F. / Tornello, J.A. / Jahnes, C.V. / Steen, S.E. et al. | 2004
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Overgrown Si/SiGe resonant interband tunnel diodes for integration with CMOSSudirgo, S. / Vega, R. / Nandgaonkar, R.P. / Hirschman, K.D. / Rommel, S.L. / Kurinec, S.K. / Thompson, P.E. / Niu Jin, / Berger, P.R. et al. | 2004
- 111
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Schottky-barrier-height engineering for strained-Si MOSFETsIkeda, K. / Yamashita, Y. / Endoh, A. / Hikosaka, K. / Mimura, T. et al. | 2004
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Device optimization for digital sub-threshold operationPaul, B.C. / Roy, K. et al. | 2004
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A study of source/drain-on-insulator structure for extremely scaled MOSFETsZhikuan Zhang, / Shengdong Zhang, / Chuguang Feng, / Mansun Chan, et al. | 2004
- 117
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Modeling of narrow-width SOI devices: the impact of quantum mechanical size quantization effects and unintentional doping on device operationAhmed, S.S. / Vasileska, D. et al. | 2004
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Three-dimensional multi-bridge-channel MOSFET (MBCFET) fabricated on bulk Si-substrateSung-Young Lee, / Eun-Jung Yoon, / Sung-Min Kim, / Chang Woo Oh, / Ming Li, / Dong-Won Kim, / Ilsub Chung, / Donggun Park, / Kinam Kim, et al. | 2004
- 121
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Electronic and magnetic properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions [spintronic device applications]May, S.J. / Wessels, B.W. et al. | 2004
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Flexible substrate a-Si:H TFTs for space applicationsLisong Zhou, / Jackson, T. / Brandon, E. / West, W. et al. | 2004
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Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodesKwang Seok Lee, / Blanchet, G.B. / Feng Gao, / Yueh-Lin Loo, et al. | 2004
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A printable form of single crystal silicon for high performance thin film transistors on plasticMenard, E. / Khang, D.-Y. / Lee, K. / Nuzzo, R. / Rogers, J.A. et al. | 2004
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Resonant tunneling permeable base transistor based pulsed oscillatorLind, E. / Lindstrom, P. / Nauen, A. / Wernersson, L.-E. et al. | 2004
- 131
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Session IV.A. Carbon Nanotube Transistors| 2004
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Novel structures enabling bulk switching in carbon nanotube FETsLin, Y.-M. / Appenzeller, J. / Avouris, P. et al. | 2004
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An extended model for carbon nanotube field-effect transistorsKnoch, J. / Mantl, S. / Lin, Y.-M. / Chen, Z. / Avouris, P. / Appenzeller, J. et al. | 2004
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Air-stable chemical doping of carbon nanotube transistors [CNFETs]Chen, J. / Klinke, C. / Afzali, A. / Avouris, P. et al. | 2004
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Complex band structure-based non-equilibrium Green's function (NEGF) transport studies for ultra-scaled carbon nanotube (CNT) transistors [CNTFETs]Tongsheng Xia, / Register, L.F. / Banerjee, S.K. et al. | 2004
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Coherent transport of hole in p type semiconductive carbon nanotubeKamimura, T. / Hyon, C.K. / Kojima, A. / Maeda, M. / Matsumoto, K. et al. | 2004
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Session IV.B Nitride Transport [breaker page]| 2004
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Comparative analysis of hot-phonon effects in nitride and arsenide channels for HEMTsMatulionis, A. et al. | 2004
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Velocity overshoot effects and transit times in III-V nitride HFETs : a Monte Carlo studySingh, M. / Yuh-Renn Wu, / Singh, J. et al. | 2004
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Session IV.C. Photonic Devices [breaker page]| 2004
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Materials and device developments for ultraviolet LEDs and laser diodesBergmann, M. / Kuhr, T. / Haberem, K. / Hussell, C. / Abare, A. / Emerson, D. et al. | 2004
- 153 vol.1
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Progress in quantum dots for nanophotonic devicesArakawa, Y. et al. | 2004
- 154
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Optical near-field enhancement of metal-aperture VCSEL with nano metal particleHashizume, J. / Koyama, F. et al. | 2004
- 156
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Characteristics of high-performance 1.0 /spl mu/m and 1.3 /spl mu/m quantum dot lasers: impact of p-doping and tunnel injectionFathpour, S. / Mi, Z. / Chakrabarti, S. / Bhattacharya, P. / Kovsh, A.R. / Mikhrin, S.S. / Krestnikov, I.L. / Kozhukhov, A.V. / Ledentsov, N.N. et al. | 2004
- 158
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The role and suppression of carrier leakage in 1.5 /spl mu/m GaInNAsSb/GaAs lasersBank, S.R. / Wistey, M.A. / Yuen, H.B. / Goddard, L.L. / Harris, J.S. et al. | 2004
- 160
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High-temperature spin-polarized quantum dot light-emitting diodesHolub, M. / Fathpour, S. / Chakrabarti, S. / Topol'ancik, J. / Bhattacharya, P. / Lei, Y. et al. | 2004
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Session V. Invited Session: Out-of -the Box Electronics| 2004
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Electron Y-branch switchesWorschech, L. / Hartmann, D. / Reitzenstein, S. / Forchel, A. et al. | 2004
- 169 vol.1
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Optical manipulation of magnetism in III-V-based ferromagnetic semiconductors and its device applicationMunckata, H. et al. | 2004
- 170
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Physical limits on binary logic switch scalingLent, C.S. / Mo Liu, / Timler, J. et al. | 2004
- 173
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Session V.A Detectors [Breaker page]| 2004
- 175
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High-efficiency, Ge-on-SOI lateral PIN photodiodes with 29 GHz bandwidthKoester, S.J. / Schaub, J.D. / Dehlinger, G. / Chu, J.O. / Ouyang, Q.C. / Grill, A. et al. | 2004
- 177
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Erratum, Session V.A-5, replaces page 178 in the conference digest for "A low-temperature Si/SiGe impact diode for improved infrared sensing" by J.A. Meteer, S.S. Eikenberry, J.E. Huffman, E.C. Kan| 2004
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A low-temperature Si/SiGe impact diode for improved infrared sensingMeteer, J.A. / Eikenberry, S.S. / Huffman, J.E. / Kan, E.C. et al. | 2004
- 179
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Session V.B Organic Devices [Breaker page]| 2004
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Full-swing pentacene organic thin-film transistor inverter with enhancement-mode driver and depletion-mode loadCheon An Lee, / Sung Hun Jin, / Keum Dong Jung, / Jong Duk Lee, / Byung-Gook Park, et al. | 2004
- 183
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Single-monolayer inkjetted oligothiophene organic TFTs exhibiting high performance and low leakageChang, P.C. / Molesa SE, / Murphy, A.R. / Frechet, J.M.J. / Subramanian, V. et al. | 2004
- 185
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Channel confined kinesin-microtubule biomolecular nanomotorsHuang, Y.M. / Uppalapati, M. / Hancock, W.O. / Jackson, T.N. et al. | 2004
- 187
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Rump Sessions| 2004
- 189 vol.1
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Ge in main-stream CMOS: a future or fancy?Kalavade, P. / Shulze, J. et al. | 2004
- 190 vol.1
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Are molecules the right choice as transistor channels?Loo, L. / Appenzeller, J. et al. | 2004
- 191 vol.1
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Will the velocity of GaN HEMTs ever overshoot? [mm-wave frequencies]Yifeng Wu, et al. | 2004
- 193
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Session VI.A. Joint DRC/EMC Invited Session| 2004
- 195
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Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopyGuisinger, N.P. / Basu, R. / Greene, M.E. / Baluch, A.S. / Hersam, M.C. et al. | 2004
- 198
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IR emission from Schottky barrier carbon nanotube FETsMartel, R. / Misewichtt, J. / Tsang, J.C. / Avouris, P. et al. | 2004
- 202
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Measurement of electron transport and mechanical properties of single moleculesNongjian Tao, / Bingqian Xu, / Xiaoying Xiao, et al. | 2004
- 205
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Session VI.B Aggressively-Scaled FETs [breaker page]| 2004
- 207
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4-terminal FinFETs with high threshold voltage controllabilityLiu, Y.X. / Masahara, A. / Ishii, K. / Sekigawa, T. / Takashirna, H. / Yarnauchi, H. / Tsutsurni, T. / Sakamoto, K. / Suzuki, E. et al. | 2004
- 209
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Fin width scaling criteria of body-tied FinFET in sub-50 nm regimeHye Jin Cho, / Jeong Dong Choe, / Ming Li, / Jin Young Kim, / Sung Hoon Chung, / Chang Woo Oh, / Eun-Jung Yoon, / Dong-Won Kim, / Donggun Park, / Kinam Kim, et al. | 2004
- 211
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A new fabrication method for self-aligned nanoscale I-MOS (impact-ionization MOS)Woo Young Choi, / Byung Yong Choi, / Dong-Soo Woo, / Jong Duk Lee, / Byung-Gook Park, et al. | 2004
- 213
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Nano-scale MOSFETs with programmable virtual source/drainByung Yong Choi, / Yong-Kyu Lee, / Woo Young Choi, / Han Park, / Dong-Soo Woo, / Jong Duk Lee, / Byung-Gook Park, / Chang-Woo Oh, / Chilhee Chung, / Donggun Park, et al. | 2004
- 215
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Scaling issues of n-channel vertical tunnel FET with /spl delta/p/sup +/ SiGe layerBhuwalka, K.K. / Schulze, J. / Eisele, I. et al. | 2004
- 217
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SOI MOSFET-based quantum tunneling device - FIBTETKyung Rok Kim, / Hyun Ho Kim, / Ki-Whan Song, / Jung Im Huh, / Jong Duk Lee, / Byung-Gook Park, et al. | 2004
- 219
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Session VII.A. Joint DRC/EMC Invited Session| 2004
- 221
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The molecular engineering of acenes: avoiding the drawbacks of improved solubility [organic electronics materials]Anthony, J.E. / Payne, M.M. / Landis, C.A. / Bullock, J.E. et al. | 2004
- 223
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Printing of polymer field-effect transistorsSirringhaus, H. et al. | 2004
- 225
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Digital lithography for thin-film transistor fabricationWong, W.S. / Lujan, R. / Ready, S.E. / Chabinyc, M.L. / Arias, A.C. / Street, R.A. et al. | 2004
- 227
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Pentacene based RFID transponder circuitryBaude, P.F. / Ender, D.A. / Kelley, T.W. / Haase, M.A. / Muyres, D.V. / Theiss, S.D. et al. | 2004
- 229 vol.1
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Hole mobility in organic single crystal field effect transistorsGoldmann, C. / Krellner, C. / Pernstich, K.P. / Haas, S. / Gundlach, D.J. / Batlogg, B. et al. | 2004
- 230
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An 8V organic complementary logic process for flexible polymeric substratesKlauk, H. / Halik, M. / Zschieschang, U. / Eder, F. / Schmid, G. / Dehm, C. et al. | 2004
- 233
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Session VII.B. High Speed Technology [breaker page]| 2004
- 235
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Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTsRieh, J.-S. / Khater, M. / Schonenberg, K.T. / Pagette, F. / Smith, P. / Adam, T.N. / Stein, K. / Ahlgren, D. / Freeman, G. et al. | 2004
- 237
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280 GHz f/sub T/ InP DHBT with 1.2 /spl mu/m/sup 2/ base-emitter junction area in MBE regrown-emitter technologyYun Wei, / Scott, D.W. / Yingda Dong, / Gossard, A.C. / Rodwell, M.J. et al. | 2004
- 241
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50 GHz resonant tunneling diode relaxation oscillatorChahal, P. / Morris, F. / Frazier, G. et al. | 2004
- 243
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Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain biasBergman, J. / Nagy, G. / Sullivan, G. / Ikhlassi, A. / Brar, B. et al. | 2004
- 245
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Index [Author]| 2004
- 248
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Breaker pages| 2004
- I.
-
Electronics AnywhereJackson, T. / IEEE Electron Devices Society et al. | 2004
- I.
-
The Transistor: From Lillienfield to Landauer, to...?Lundstrom, M. / IEEE Electron Devices Society et al. | 2004
- I.
-
Gallium Nitride Electronics: Watt is the limit?Mishra, U. K. / IEEE Electron Devices Society et al. | 2004
- i
-
Technical Program Committee| 2004
- II.A.
-
N Incorporation into ALD HfO~2 Gate Dielectric Using Ion ImplantationLi, H.-J. / Pompl, T. / Young, C. / Rhoad, T. / Saulters, J. / Peterson, J. / Gardner, M. / Brown, G. A. / Bersuker, G. / Zeitzoff, P. M. et al. | 2004
- II.A.
-
Relaxation of FN Stress Induced V~t~h Shift at NMOSFETs with HfSiON Gate Dielectric and TiN Gate ElectrodeChoi, R. / Lee, B. H. / Mathews, K. / Sim, J. H. / Bersuker, G. / Larson, L. / Lee, J. C. / IEEE Electron Devices Society et al. | 2004
- II.A.
-
Low Workfunction Fully Silicided Gate on SiO~2/Si and LaAlO~3/GOI n-MOSFETsYu, D. S. / Chin, A. / Hung, B. F. / Chen, W. J. / Zhu, C. X. / Li, M.-F. / Zhu, S. Y. / Kwong, D. L. / IEEE Electron Devices Society et al. | 2004
- II.A.
-
A Novel Surface Passivation Process for HfO~2 Ge MOSFETsWu, N. / Zhang, Q. / Zhul, C. / Chan, D. S. H. / Li, M. F. / Balasubramanian, N. / Du, A. Y. / Chin, A. / Si, J. K. O. / Kwon, D.-L. et al. | 2004
- II.B.
-
Use of Multichannel Heterostructures to Improve the Access Resistance and f~T Linearity in GaN-based HEMTsPalacios, T. / Chini, A. / Buttari, D. / Heikman, S. / Keller, S. / DenBaars, S. P. / Mishra, U. K. / IEEE Electron Devices Society et al. | 2004
- II.B.
-
Ion Implantation for Unalloyed Ohmic Contacts to AIGaN/GaN HEMTsYu, H. / McCarthy, L. / Rajan, S. / Keller, S. / DenBaars, S. P. / Speck, J. S. / Mishra, U. K. / IEEE Electron Devices Society et al. | 2004
- II.B.
-
10 kV, 123 mOmega-cm^2 4H-SiC Power DMOSFETsRyu, S.-H. / Krishnaswami, S. / O Loughlin, M. / Richmond, J. / Agarwal, A. / Palmour, J. / Hefner, A. R. / IEEE Electron Devices Society et al. | 2004
- III.
-
A New Two-Step Recess Technology Using SiN~x Passivation and Pt-Buried Gate Process and its Application to 0.15 mum AI~0~.~6InAs/In~0~.~6~5GaAs HEMTsKim, D.-H. / Lee, K.-M. / Lee, J.-H. / Seo, K.-S. / IEEE Electron Devices Society et al. | 2004
- III.
-
Short Channel Amorphous-Silicon TFTs on High-Temperature Clear Plastic SubstratesLong, K. / Gleskova, H. / Wagner, S. / Sturm, J. C. / IEEE Electron Devices Society et al. | 2004
- III.
-
Electronic and Magnetic Properties of Ferromagnetic p-(In,Mn)As/n-InAs HeterojunctionsMay, S. J. / Wessels, B. W. / IEEE Electron Devices Society et al. | 2004
- III.
-
C~B~C Reduction in InP Heterojunction Bipolar Transistor with Selectively Implanted Collector PedestalDong, Y. / Griffith, A. / Dahlstrom, M. / Rodwell, M. J. W. / IEEE Electron Devices Society et al. | 2004
- III.
-
Planer Device Isolation for InP-Based DHBTsParthasarathy, N. / Dong, Y. / Scott, D. / Urteaga, M. / Rodwell, M. J. W. / IEEE Electron Devices Society et al. | 2004
- III.
-
A Novel Program-Erasable Capacitor Using High-kappa AlN DielectricLai, C. H. / Ma, M. W. / Cheng, C. F. / Chin, A. / McAlister, S. P. / Zhu, C. X. / Li, M.-F. / Kwong, D. L. / IEEE Electron Devices Society et al. | 2004
- III.
-
Threshold Voltage Instability of Ultra-Thin HfO~2 NMOSFETs: Characteristics of Polarity DependencesRhee, S. J. / Kang, C. Y. / Kim, Y. H. / Kang, C. S. / Cho, H.-J. / Choi, R. / Choi, C. H. / Akbar, M. S. / Lee, J. C. / IEEE Electron Devices Society et al. | 2004
- iii
-
62nd DRC - Device Research Conference - Conference Digest 2004 - Title| 2004
- III.
-
A Floating Gate Single Electron Memory Device with Al~2O~3 Tunnel BarriersYadavalli, K. K. / Anderson, N. R. / Orlova, T. A. / Orlov, A. O. / Snider, G. L. / IEEE Electron Devices Society et al. | 2004
- III.
-
Fabrication and Testing of Pentacene TFTs that Use Water-Dispersible Polyaniline ElectrodesLee, K. S. / Blanchet, G. B. / Gao, F. / Loo, Y.-L. / IEEE Electron Devices Society et al. | 2004
- III.
-
Single-Electron-Transistor Behavior in Deep Sub-0.1 mum Planar-Doped-Barrier FETsPesic, I. / Mutlu, A. / Gunther, N. / Rahman, M. / Schulze, J. / Hansch, W. / Eisele, I. / IEEE Electron Devices Society et al. | 2004
- IV.A.
-
Air-Stable Chemical Doping of Carbon Nanotube TransistorsChen, J. / Klinke, C. / Afzali, A. / Avouris, P. / IEEE Electron Devices Society et al. | 2004
- IV.A.
-
Complex Band Structure-Based Non-Equilibrium Green's Function (NEGF) Transport Studies for Ultra-Scaled Carbon Nanotube (CNT) TransistorsXia, T. / Register, L. F. / Banerjee, S. K. / IEEE Electron Devices Society et al. | 2004
- IV.C.
-
The Role and Suppression of Carrier Leakage in 1.5 mum GaInNAsSb/GaAs LasersBank, S. R. / Wistey, M. A. / Yuen, H. B. / Goddard, L. L. / Harris, J. S. / IEEE Electron Devices Society et al. | 2004
- IV.C.
-
Characteristics of High-Performance 1.0 mum and 1.3 mum Quantum Dot Lasers: Impact of p-Doping and Tunnel InjectionFathpour, S. / Mi, Z. / Chakarabarti, S. / Bhattacharya, P. / IEEE Electron Devices Society et al. | 2004
- v
-
Schedule of Events| 2004
- V.
-
Physical Limits of Binary Logic Switch ScalingLent, C. / IEEE Electron Devices Society et al. | 2004
- vi
-
Table of Contents| 2004
- VI.B.
-
Scaling Issues of n-Channel Vertical Tunnel FET with deltap+ SiGe LayerBhuwalka, K. K. / Schulze, J. / Eisele, I. / IEEE Electron Devices Society et al. | 2004
- VII.A.
-
The Molecular Engineering of Acenes: Avoiding the Drawbacks of Improved SolubilityAnthony, J. E. / Payne, M. M. / Landis, C. A. / Bullock, J. E. / IEEE Electron Devices Society et al. | 2004
-
Deep submicron InP DHBT technology with electroplated emitter and base contactsUrteaga, M. / Rowell, P. / Pierson, R. / Brar, B. / Dahlstrom, M. / Griffith, Z. / Rodwell, M.J.W. / Lee, S. / Nguyen, N. / Nguyen-Global, C. et al. | 2004
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Device Research Conference (IEEE Cat. No.04TH8724)| 2004