Contactless measurement of minority carrier lifetime and background carrier concentration in unintentionally doped GaAsSb for short-wave infrared detection (Englisch)
Freier Zugriff
- Neue Suche nach: Arquitola, A. M.
- Neue Suche nach: Lee, S.
- Neue Suche nach: Jung, H.
- Neue Suche nach: Nooman, N.
- Neue Suche nach: Krishna, S.
- Neue Suche nach: Arquitola, A. M.
- Neue Suche nach: Lee, S.
- Neue Suche nach: Jung, H.
- Neue Suche nach: Nooman, N.
- Neue Suche nach: Krishna, S.
In:
AIP Advances
;
13
, 8
;
6
;
2023
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ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Contactless measurement of minority carrier lifetime and background carrier concentration in unintentionally doped GaAsSb for short-wave infrared detection
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Weitere Titelangaben:Arquitola et al.
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Beteiligte:Arquitola, A. M. ( Autor:in ) / Lee, S. ( Autor:in ) / Jung, H. ( Autor:in ) / Nooman, N. ( Autor:in ) / Krishna, S. ( Autor:in )
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Erschienen in:AIP Advances ; 13, 8 ; 6
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Verlag:
- Neue Suche nach: AIP Publishing LLC
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Erscheinungsdatum:01.08.2023
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 13, Ausgabe 8
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