Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wells (Englisch)
- Neue Suche nach: Cavelier, M.
- Neue Suche nach: Lourtioz, J.-M.
- Neue Suche nach: Xie, J.-M.
- Neue Suche nach: Chusseau, L.
- Neue Suche nach: de Cremoux, B.
- Neue Suche nach: Krawkowski, M.
- Neue Suche nach: Rondi, D.
- Neue Suche nach: Cavelier, M.
- Neue Suche nach: Lourtioz, J.-M.
- Neue Suche nach: Xie, J.-M.
- Neue Suche nach: Chusseau, L.
- Neue Suche nach: de Cremoux, B.
- Neue Suche nach: Krawkowski, M.
- Neue Suche nach: Rondi, D.
In:
Electronics Letters
;
27
, 6
;
513-515
;
1991
- Aufsatz (Zeitschrift) / Print
-
Titel:Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wells
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Beteiligte:Cavelier, M. ( Autor:in ) / Lourtioz, J.-M. ( Autor:in ) / Xie, J.-M. ( Autor:in ) / Chusseau, L. ( Autor:in ) / de Cremoux, B. ( Autor:in ) / Krawkowski, M. ( Autor:in ) / Rondi, D. ( Autor:in )
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Erschienen in:Electronics Letters ; 27, 6 ; 513-515
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Verlag:
- Neue Suche nach: IET Digital Library Archive
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Erscheinungsdatum:14.03.1991
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Format / Umfang:3 pages
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ISSN:
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Coden:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
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Schlagwörter:gallium arsenide , quantum well lasers , seven well laser , gallium compounds , semiconductors , three well lasers , differential gain , semiconductor junction lasers , III-V semiconductors , GaInAs-GaInAsP lasers , modulation bandwidth , indium compounds , semiconductor quantum wells , gain compression factor , five well lasers , number of wells , phase-amplitude coupling factor
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Datenquelle:
Inhaltsverzeichnis – Band 27, Ausgabe 6
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