Research progress of semiconductive shielding layer of HVDC cable (Englisch)
Freier Zugriff
- Neue Suche nach: Wei, Yanhui
- Neue Suche nach: Han, Wang
- Neue Suche nach: Li, Guochang
- Neue Suche nach: Lei, Qingquan
- Neue Suche nach: Fu, Mingli
- Neue Suche nach: Hao, Chuncheng
- Neue Suche nach: Zhang, Guanjun
- Neue Suche nach: Wei, Yanhui
- Neue Suche nach: Han, Wang
- Neue Suche nach: Li, Guochang
- Neue Suche nach: Lei, Qingquan
- Neue Suche nach: Fu, Mingli
- Neue Suche nach: Hao, Chuncheng
- Neue Suche nach: Zhang, Guanjun
In:
High Voltage
;
5
, 1
;
1-6
;
2020
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Research progress of semiconductive shielding layer of HVDC cable
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Beteiligte:Wei, Yanhui ( Autor:in ) / Han, Wang ( Autor:in ) / Li, Guochang ( Autor:in ) / Lei, Qingquan ( Autor:in ) / Fu, Mingli ( Autor:in ) / Hao, Chuncheng ( Autor:in ) / Zhang, Guanjun ( Autor:in )
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Erschienen in:High Voltage ; 5, 1 ; 1-6
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Verlag:
- Neue Suche nach: The Institution of Engineering and Technology
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Erscheinungsdatum:20.01.2020
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Format / Umfang:6 pages
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ISSN:
-
DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:HVDC power transmission , cable shielding materials , charge accumulation characteristics , semiconductor materials , insulating layer , electrical materials , C , thermal conductivity , carbon black content , high voltage terminal charge emission method , insulation layer , carbon , thermal conduction , semiconductive shielding layer material , cable shielding , China , voltage 35.0 kV , HVDC cable , second conductive filler , high-voltage direct current cable , charge conduction , electric fields , interface characteristics , power cables , electric field
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Datenquelle:
Metadata by IET is licensed under CC BY 3.0
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