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During the quarter, the majority of the effort was devoted to the slumpage and cosmetic problems. The characteristics of the slumpage problem are reviewed. Although the mechanism responsible for the slump has not been determined, it is shown that the fabrication procedures have been developed to the degree that good shelf life is possible. The new LPE growth facility, solely for growing InGaAsP cathodes for tubes, has been completed and reoptimization of the doping has nearly been accomplished. Several pre- and post-growth procedures for improving surface cosmetics have been tested with encouraging results. Implementation of these procedures will commence as soon as the cathode sensitivities are at an acceptable level. Calculations have been made which indicate excellent broadband performance potential using InGaAsP sealed to glass. Experimental verification is expected in the next reporting period. (Author)