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IMPATT diode and microwave circuit interactions at X-band were examined by means of state space techniques. Complexity of circuit formulation is found to limit the usefulness of these techniques. A small-signal lumped model for the IMPATT diode was extended to a nonuniform cross-section chip to obtain the parameters of both the chip model and the package equivalent circuit by computer search. A design procedure is presented for a microstrip IMPATT diode oscillator, and the frequency of operation is predicted to within 3%. The effects of the diode reference plane and the microstrip-to-coaxial-line connector are significant. The gain and phase shift of a coaxial IMPATT diode amplifier was predicted from the lumped model and experimentally verified. (Author)