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The need for the analysis of many types of refractory materials made it desirable to have one method that would be applicable to as many of these materials as possible. The method developed provides identical conditions for sample preparation, excitation, and other steps in the analysis of HfO2, TiO2, and ZrO2 and compounds or materials that can be converted to the oxides. The technique involves the use of a mixed buffer-carrier, a controlled atmosphere, relatively high amperage, and a short exposuretime. Conditions were selected to give optimum sensitivity for impurities with minimum spectral interference from the matrix. Determination of some of the refractory impurities such as Hf in ZrO2, as well as the more volatile impurities is possible. Sixteen impurity elements can be determined, most of them in the 10-1000 ppm range, withan overall precision of about = 20 percent. Two additional impurity elements are determined semi-quantitatively by visual estimation. (Author)