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New inspirations respecting the idea to stabilize semiconductor contact metallization by incorporating a diffusion barrier layer are overviewed. Diffusion barriers are classified in terms of their structure or their relative stability at elevated temperatures. Elemental metallic films are not the most favorable choices for diffusion barriers. Certain compounds or alloys show better performance than simple metals. It is also noted that the elemental composition and film structure determines the value of the barrier. Multilayer configurations to optimize the overall contact performance are considered. Experimental investigations concentrate on properties of tungsten-nitrogen alloys and titanium nitride for the application as diffusion barriers in silicon and gallium arsenide metallization schemes. Nitrogen stabilizes tungsten barriers unless metallurgical contact to highly reactive metals. At high temperatures titanium is able to reduce tungsten-nitrogen alloys. In ohmic contacts to gallium arsenide, titanium nitride is shown to enhance thermal stability. Properties of sputter-deposited titanium nitride films are, however, greatly affected by deposition parameters, such as pressure or bias voltage.