Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixtures (Unbekannt)
- Neue Suche nach: Vignoli, S.
- Neue Suche nach: Vignoli, S.
- Neue Suche nach: Meaudre, R.
- Neue Suche nach: Meaudre, M.
- Neue Suche nach: Chanel, L.
- Neue Suche nach: Roca Cabarrocas, P.
In:
Journal of non-crystalline solids
;
164
; 191-194
;
1994
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixtures
-
Beteiligte:
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Erschienen in:Journal of non-crystalline solids ; 164 ; 191-194
-
Verlag:
- Neue Suche nach: North-Holland Publ. Co.
-
Erscheinungsort:Amsterdam
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Erscheinungsdatum:1994
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Unbekannt
- Neue Suche nach: 51.45 / 51.60 / 33.61 / 35.90
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3475
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 164
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
-
The Mott Lecture. Structural and electronic properties of amorphous SiGe: H alloysPaul, W. et al. | 1994
- 11
-
Activated transport in improved hydrogenated amorphous germanium (a-Ge: H) - the influence of cooling rate, contacts, electric field and a-Si: H barriersDrüsedau, T. et al. | 1994
- 15
-
Spin dependent photoconductivity in hydrogenated amorphous silicon germanium alloysGraeff, C.F.O. et al. | 1994
- 19
-
Effect of H-content and H-bonding configuration on light and thermal induced metastability in amorphous hydrogenated germanium (a-Ge: H)Eberhardt, K. et al. | 1994
- 23
-
Electronic mobility gap structure and the nature of deep defects in amorphous silicon-germanium alloysUnold, T. et al. | 1994
- 27
-
Interfacial reactions in the a-Si1-xGex:H-Cr-quartz systemEdelman, F. et al. | 1994
- 31
-
Importance of surface processes in defect formation in a-Si: HGanguli, G. et al. | 1994
- 37
-
Towards high deposition rates of a-Si: H: the limiting factorsRoca Cabarrocas, P. et al. | 1994
- 43
-
Defect determination kinetics during the growth of a-Si: HKamei, T. et al. | 1994
- 47
-
Stable a-Si: H fabricated from halogenous silane by ECR hydrogen plasmaAzuma, M. et al. | 1994
- 51
-
Threshold intensity for dangling-bond-termination reaction by ultraviolet laser irradiation during plasma deposition of a-Si: H filmsSuzuki, A. et al. | 1994
- 55
-
Control of a-Si: H deposition by the ion flux in a VHF plasmaHeintze, M. et al. | 1994
- 59
-
Influence of higher deposition temperature on a-Si: H material properties, powder formation and light-induced degradation, using the VHF (70 MHz) glow discharge techniqueKroll, U. et al. | 1994
- 63
-
Relationship between film quality and deposition rate for a-Si: H by ECR plasma CVDZhang, M. et al. | 1994
- 67
-
Hydrogenated amorphous silicon-nitrogen alloys, a-Si,N: H: a candidate alloy for the wide band gap photo-active material in tandem photovoltaic (PV) devicesWilliams, M.J. et al. | 1994
- 71
-
Fabrication of amorphous silicon solar cells at high temperatures using ECR deposition techniquesDalal, V.L. et al. | 1994
- 75
-
Key parameters for further reduction of gap states in a-Ge: H and its improved stability under keV-electron irradiationDrüsedau, T. et al. | 1994
- 79
-
Growth of amorphous zinc phosphide films by reactive radio frequency sputteringWeber, A. et al. | 1994
- 83
-
Deposition of a-Si: H with hot-wire-techniqueZedlitz, R. et al. | 1994
- 87
-
Deposition of device quality a-Si: H films with the hot-wire techniquePapadopulos, P. et al. | 1994
- 91
-
Electron-flux induced growth of microcrystalline germanium by ECR plasmaAoki, T. et al. | 1994
- 95
-
Hydrogenated amorphous silicon films prepared from trisilane by windowless hydrogen discharge lampYoshida, A. et al. | 1994
- 99
-
Unusual magnetron sputtered a-Si: H materials obtained at high deposition rates as favourable precursors for the preparation of large grain sized crystallized thin silicon filmsCuniot, M. et al. | 1994
- 103
-
In-situ investigation of the growing a-Si: D surface by infrared reflection absorption spectroscopyToyoshima, Y. et al. | 1994
- 107
-
In situ infrared ellipsometry study of the hydrogen incorporation in p-doped amorphous silicon and p-i interfacesOssikovski, R. et al. | 1994
- 111
-
Real time infrared reflectance spectroscopy: A study of hydrogen incorporation and release during a-Si: H growth by reactive magnetron sputteringKatiyar, M. et al. | 1994
- 115
-
Optical detection and dynamics of surface transient processes in plasma CVD of hydrogenated amorphous siliconTakano, A. et al. | 1994
- 119
-
In situ UV-visible and infrared ellipsometry study of the influence of silane dilution on the growth of hydrogenated amorphous siliconShirai, H. et al. | 1994
- 123
-
In situ characterization of chemical annealing of a-Si: H by photoelectron spectroscopyGertkemper, T. et al. | 1994
- 127
-
Influence of powder formation in a silane discharge on a-Si: H film growth monitored by in situ ellipsometrySchmidt, U.I. et al. | 1994
- 131
-
The effects of Ar and He dilution of silane plasmas on the microstructure of a-Si: H detected by small-angle X-ray scatteringJones, S.J. et al. | 1994
- 135
-
Microstructure of P-Se glasses and low frequency Raman scatteringPhillips, R.T. et al. | 1994
- 139
-
Structure of Ag-Ge-S glasses determined by isotopic substitution neutron scattering and reverse Monte Carlo simulationsLee, J.H. et al. | 1994
- 143
-
Effect of deposition temperature on disorder in InPBayliss, S.C. et al. | 1994
- 147
-
Reverse Monte Carlo simulation: the structure of amorphous siliconPusztai, L. et al. | 1994
- 151
-
Structural studies of amorphous Cd59As41 and Cd26As74 films by anomalous X-ray scatteringBurian, A. et al. | 1994
- 155
-
Small angle X-ray scattering and infrared spectroscopy study of sputtered a-Ge: HMulato, M. et al. | 1994
- 159
-
Local structure and dynamics of amorphous germanium studied by the cumulant expansion of EXAFSDalba, G. et al. | 1994
- 163
-
Light-induced effects and stability in a-Si: H and related alloysShimizu, T. et al. | 1994
- 169
-
Pulsed-ESR study of light-induced metastable defect in a-Si: HYamasaki, S. et al. | 1994
- 175
-
Temperature dependence of creation and annealing of light-induced metastable defects in a-Si: HStradins, P. et al. | 1994
- 179
-
Do impurities affect the optoelectronic properties of a-Si: H?Nakata, M. et al. | 1994
- 183
-
Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si: HGleskova, H. et al. | 1994
- 187
-
Difference between deposition- and light-induced defects in a-Si: H studied by light-induced annealing experimentsHata, N. et al. | 1994
- 191
-
Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixturesVignoli, S. et al. | 1994
- 195
-
Light-induced transient changes of the occupied density of defect states of a-Si: HGraf, W. et al. | 1994
- 199
-
Thermally stimulated defect removal in hydrogenated amorphous silicon thin film transistorsMorgan, P.N. et al. | 1994
- 203
-
Thermodynamic equilibrium kinetics of phosphorus and boron doped a-Si: HNebel, C.E. et al. | 1994
- 207
-
Light-induced states in a-As2Se3: comparison with a-Si: HNaito, H. et al. | 1994
- 211
-
A new method for detecting the delicate Si: H bond change in a-Si: HKong, G.L. et al. | 1994
- 215
-
Dispersive model for the creation and annealing processes of light-induced defects in a-Si: HMorigaki, K. et al. | 1994
- 219
-
The presence of different kinds of dangling bonds and their light-induced creation in a-Si: HHikita, H. et al. | 1994
- 223
-
New results of spin-lattice relaxation in a-Si: H by pulsed ESRDurny, R. et al. | 1994
- 227
-
Possibility of hydrogen migration in photoinduced defect creation process of a-Si: HKondo, M. et al. | 1994
- 231
-
Kinetics and steady-states of light-induced defects in a-Si: H prepared by three different techniquesHata, N. et al. | 1994
- 235
-
Pulsed ruby laser accelerated degradation of amorphous hydrogenated siliconKlima, O. et al. | 1994
- 239
-
Dynamic phase diagram for a-Si in rapid thermal processesKitagawa, A. et al. | 1994
- 243
-
In-situ measurements during the growth of a-Si: H on c-Si substratesSwiatkowski, C. et al. | 1994
- 247
-
Aging effects in a-Si: H pin solar cells investigated by below gap modulated photocurrent spectroscopyMencaraglia, D. et al. | 1994
- 251
-
Persistent photoconductivity in a-Si1-xSx: H at low sulfur concentrationWang, S.L. et al. | 1994
- 255
-
Thermal quenching in doped LPCVD amorphous silicon hydrogenated by ion implantationPietruszko, S.M. et al. | 1994
- 259
-
Effect of the deposition variables on amorphous silicon stabilityBuitrago, R.H. et al. | 1994
- 263
-
Effect of hydrogen exchange on diffusion and evolution in hydrogenated amorphous siliconJackson, W.B. et al. | 1994
- 269
-
Hydrogen diffusion mechanism in amorphous silicon from deuterium tracer studiesBranz, H.M. et al. | 1994
- 273
-
Accelerated hydrogen migration under steady-state and pulsed illumination in a-Si: HSantos, P.V. et al. | 1994
- 277
-
Hydrogen migration in a pulsed electric field in a-Si: HSantos, P.V. et al. | 1994
- 281
-
The effect of post-hydrogenation on the equilibrium and metastable properties of hydrogenated amorphous siliconNickel, N.H. et al. | 1994
- 285
-
Experimental study of disorder and defects in undoped a-Si: H as a function of annealing and hydrogen evolutionZellama, K. et al. | 1994
- 289
-
Diffusion of lithium and hydrogen in hydrogenated amorphous siliconBeyer, W. et al. | 1994
- 293
-
Interstitial hydrogen in silicon: a theoretical studyColle, R. et al. | 1994
- 297
-
Modelling of hydrogen centres in silicon and its oxides by muon implantationSingh, A. et al. | 1994
- 301
-
Monte Carlo simulations of anomalous relaxation in a-Si: H - random walk in spaces of fractal dimensionFujiwara, S. et al. | 1994
- 305
-
Hydrogen diffusion in a-Si: H-a-Si structure under electrical biasSong, Z. et al. | 1994
- 309
-
Optimisation of the hydrogen content in a-Si: H deposited at high rate by dc magnetron sputteringBeldi, N. et al. | 1994
- 313
-
Microscopic motion of hydrogen in the dilute and clustered phases of hydrogenated amorphous siliconHari, P. et al. | 1994
- 317
-
The defect-pool model and charged defects in amorphous siliconSchumm, G. et al. | 1994
- 323
-
Defect pool model parameters for amorphous silicon derived from field effect measurementsDeane, S.C. et al. | 1994
- 327
-
Relaxation of the D center in amorphous silicon and how this accounts for the observed energy distributions of deep defects within the mobility gapCohen, J.D. et al. | 1994
- 331
-
Photocarrier drift and recombination in a-Si: H: the vital importance of defect relaxationSchiff, E.A. et al. | 1994
- 335
-
On the role of hydrogen in metastable defect equilibration in undoped hydrogenated amorphous siliconVanecek, M. et al. | 1994
- 339
-
Transient forward bias currents in a-Si: H p-i-n devicesHan, D. et al. | 1994
- 343
-
Electronic and optical properties of n-type a-Si: HGaughan, K. et al. | 1994
- 347
-
Steady-state optical modulation spectroscopy of B2H6 doped a-Si: HHerremans, H. et al. | 1994
- 351
-
Interpretation of CPM measurements in amorphous semiconductorsHattori, K. et al. | 1994
- 355
-
More insights from simulation for the interpretation of the constant photocurrent methodPlatz, R. et al. | 1994
- 359
-
Optical absorption of high quality a-Si:H and a-SixN1-x: H in the low energy region 0.43 eV-1.5 eV by PDSNonomura, S. et al. | 1994
- 363
-
Analysis of the temperature dependence of the CPM-derived optical absorption spectra of hydrogenated amorphous silicon filmsSládek, P. et al. | 1994
- 367
-
Optically detected ESR studies of a-Si: HMao, D. et al. | 1994
- 371
-
ESR studies on a-Si: H: evidence for charged defects and safe hole trapsHautala, J. et al. | 1994
- 375
-
Photoconductivity spectroscopy (CPM) on a-Ge: H at low temperaturesScholz, A. et al. | 1994
- 379
-
Thickness dependence of spectral photoconductivity in a-Si: HFiorini, P. et al. | 1994
- 383
-
Dual-beam photocurrent spectra in undoped a-Si: H: anomalous band, optical transition energy, and correlation energyLiu, J.Z. et al. | 1994
- 387
-
Photoinduced metastable defects in amorphous semiconductors: communality between hydrogenated amorphous silicon and chalcogenidesShimakawa, K. et al. | 1994
- 391
-
Pressure induced effects in glassy semiconductors: variations of negative-U center properties and related superconductivityKlinger, M.I. et al. | 1994
- 395
-
Light-induced defects in a-Si: HGolikova, O.A. et al. | 1994
- 399
-
The dependencies of the two carriers mobility-lifetime products on the position of the Fermi level in a-Si: HLubianiker, Y. et al. | 1994
- 403
-
Influence on the transport properties of the deposition temperature of a-Si: H films deposited from mixtures of silane in helium at high deposition ratesKleider, J.P. et al. | 1994
- 407
-
Cycled xerographic and time-of-flight measurements: theory and experimentVeres, J. et al. | 1994
- 411
-
Study of the density of states in a-Si: H using the Si-electrolyte systemMany, A. et al. | 1994
- 415
-
Defect density and photoelectrical properties of alternative doped amorphous siliconSchmal, J. et al. | 1994
- 419
-
CPM and spectral photoconductivity techniques: a critical analysis of the experimental resultsConte, G. et al. | 1994
- 423
-
Determination of the density of states in p doped hydrogenated amorphous silicon by means of the modulated photocurrent experimentLongeaud, C. et al. | 1994
- 427
-
Limits of the constant photocurrent method (CPM) for the determination of the deep defect density in amorphous hydrogenated silicon (a-Si: H)Mettler, A. et al. | 1994
- 431
-
Equilibrium and non-equilibrium transport in band tailsThomas, P. et al. | 1994
- 437
-
Effective temperature for electrons in band tailsBaranovskii, S.D. et al. | 1994
- 441
-
Transport near the mobility edge, the sign of the Hall effect, photoreduction and oxidation of amorphous InOxPashmakov, B. et al. | 1994
- 445
-
Hall effect near the mobility edgeOkamoto, H. et al. | 1994
- 449
-
Hall experiments and interpretation on a-Si: H and a-SiC: HNebel, C.E. et al. | 1994
- 453
-
In search of a normal Hall effect in amorphous siliconTong, B.Y. et al. | 1994
- 457
-
Electrons, holes, and the Hall effect in amorphous siliconMorgan, G.J. et al. | 1994
- 461
-
Multifractality and anomalous diffusion at the mobility edge in disordered systemsHuckestein, B. et al. | 1994
- 465
-
Stochastic transport model for diffusive properties in amorphous systemsGomi, S. et al. | 1994
- 469
-
Conductance fluctuations in doped hydrogenated amorphous siliconFan, J. et al. | 1994
- 473
-
Random telegraphic noise in a-Si1-xCx: H Schottky barriersBernhard, N. et al. | 1994
- 477
-
Response time measurements in microcrystalline siliconSchwarz, R. et al. | 1994
- 481
-
Time and frequency domain studies of photoconductivity in amorphous semiconductorsMain, C. et al. | 1994
- 485
-
Role of dangling bond charge in determining mt-products for a-Si: HShah, A. et al. | 1994
- 489
-
Demonstration of space-charge-limited time of flight as a new tool for characterization of real a-Si: H solar cellsKocka, J. et al. | 1994
- 493
-
Trapping effects in a-Si: H investigated by the SSPG techniqueHaridim, M. et al. | 1994
- 497
-
Carrier mobility and lifetime in a-Si: H determined by the moving grating techniqueHaken, U. et al. | 1994
- 501
-
The effect of hydrogenation on the electronic properties of amorphous silicon-nickel alloys near the metal-insulator transitionDammer, U. et al. | 1994
- 505
-
Electric field relaxation in prolonged-time photocurrent experimentsNesládek, M. et al. | 1994
- 509
-
Amorphous silicon dispersive transport considerations for analysis of films and solar cellsFortmann, C.M. et al. | 1994
- 513
-
Conductivity and magnetoconductivity of amorphous CrxGe1-x near the metal-insulator transitionHeinrich, A. et al. | 1994
- 517
-
Dark and photoconductivity of TBP doped N-type a-Si: HMehra, R.M. et al. | 1994
- 521
-
Study of the temperature and field dependence of electron drift mobility in a-Si1-xCx :H using the time-of-flight techniqueBayley, P.A. et al. | 1994
- 525
-
Transient photoconductivity response with optical bias in a-Si: HPipoz, P. et al. | 1994
- 529
-
Field enhanced conductivity in a-Si: H thin film transistorsNagy, A. et al. | 1994
- 533
-
Experimental dark discharge of a-Si1-xCx: H films and its comparison to Monte Carlo simulationsSwaaij, R.A.C.M.M.van et al. | 1994
- 537
-
Temperature dependent SCLC in amorphous siliconSchauer, F. et al. | 1994
- 541
-
Recombination in a-Si: H films and pin-structures studied by electrically detected magnetic resonance (EDMR)Fuhs, W. et al. | 1994
- 547
-
Spin-dependent photoconductivity as a function of wavelength: a test for the constant photocurrent method in a-Si: HBrandt, M.S. et al. | 1994
- 551
-
Transport and recombination in a-Si: H p-i-n diodes under forward bias conditionsCarius, R. et al. | 1994
- 555
-
Influence of defects and temperature on the lifetime distribution of carriers in a-Si: HSchubert, M. et al. | 1994
- 559
-
Discontinuous change of photoluminescence lifetime with temperature in hydrogenated amorphous siliconOheda, H. et al. | 1994
- 563
-
Non-equilibrium carriers in a-Si: H excited by defect absorptionSaleh, R. et al. | 1994
- 567
-
Reconsideration of electron-lattice interaction in amorphous semiconductorsShinozuka, Y. et al. | 1994
- 571
-
Temperature dependence of photoluminescence spectra and model of self-trapping of holes in a-Si: HMorigaki, K. et al. | 1994
- 575
-
Optical detection of photoconductivity in hydrogenated amorphous silicon, a-Si: H, in the sub-picosecond time domainKurz, H. et al. | 1994
- 579
-
Subnanosecond bimolecular non-radiative recombination in a-Si: HJuska, G. et al. | 1994
- 583
-
Frequency-resolved spectroscopy and its application to lifetime studies in a-Si: HStachowitz, R. et al. | 1994
- 587
-
Quantum efficiency of geminate recombination under dispersive transport conditionsArkhipov, V.I. et al. | 1994
- 591
-
Electric field quenching of continuous wave photoluminescence in hydrogenated amorphous siliconYi, S. et al. | 1994
- 595
-
The effect of photodegradation on electroluminescence in a-Si: H devicesWang, K. et al. | 1994
- 599
-
Effect of light-induced degradation on photoconductive gain in a-Si: H n-i-p devicesVanderhaghen, R. et al. | 1994
- 603
-
Time-resolved transients of IR-stimulated luminescence and conductivity in a-Si: HVollmar, H.-P. et al. | 1994
- 607
-
Photoconductivity in compensated a-Si: H and the effect of bias light on the drift mobilityTzanetakis, P. et al. | 1994
- 611
-
A NAN-like model for the growth and steady state magnitude of photoluminescence and carrier population in amorphous semiconductors at low temperaturesSearle, T.M. et al. | 1994
- 615
-
The shape of the PL band in a-Si: H and its alloys of carbon and nitrogenSearle, T.M. et al. | 1994
- 619
-
Temperature dependence of radiative and non-radiative lifetimes in hydrogenated amorphous siliconMuschik, T. et al. | 1994
- 623
-
Trapping and recombination processes in amorphous semiconductors studied by the optical bias dependence of the modulated photoconductivityKounavis, P. et al. | 1994
- 627
-
Electron and hole mt products in a-Si: H and the standard dangling bond modelMorgado, E. et al. | 1994
- 627
-
Electron and hole products in a-Si:H and the standard dangling bond modelMorgado, E. et al. | 1993
- 631
-
On the nature of photo-induced defects and recombination mechanisms in light-soaked a-Si: H filmsZvyagin, I.P. et al. | 1994
- 635
-
Photoluminescence and photothermal deflection spectroscopy in potassium doped a-Si: HGalloni, R. et al. | 1994
- 639
-
Visible photoluminescence of nanometer-size Ge crystallites in SiO2 glassy matricesKanemitsu, Y. et al. | 1994
- 643
-
Physics of a-Si: H p-i-n devicesLeComber, P.G. et al. | 1994
- 643
-
P.G. LeComber Memorial Lecture. Physics of a-Si:H p-i-n devicesStreet, R. A. et al. | 1993
- 653
-
Physics of a-Si: H switching diodesBerkel, C.van et al. | 1994
- 659
-
Light and current degradation of a-Si: H pin, nin and pip diodes detected with CPMOstendorf, H.-C. et al. | 1994
- 663
-
Some aspects of the role of holes in the transient response of a-Si: H pin-diodesBrüggemann, R. et al. | 1994
- 667
-
Investigation of the interface properties of hydrogenated amorphous silicon p-i junctionsTrijssenaar, M. et al. | 1994
- 671
-
Tailoring defects on amorphous silicon pin devicesMartins, R. et al. | 1994
- 675
-
Spectrally resolved electroluminescence and photoluminescence in a-Si: H pin-diodes compared with optical multilayer calculationsBecker, F. et al. | 1994
- 679
-
a-Si technologies for high efficiency solar cellsTsuda, S. et al. | 1994
- 685
-
Manufacturing of large area single junction a-Si: H solar modules with 10.7% efficiencyBauer, J. et al. | 1994
- 689
-
High efficiency a-Si: H alloy cell deposited at high deposition rateSaito, K. et al. | 1994
- 693
-
Spin-dependent transport in amorphous silicon nin-structuresBrandt, M.S. et al. | 1994
- 697
-
Degradation of a-Si: H p-i-n solar cells studied by electrically detected magnetic resonanceLips, K. et al. | 1994
- 701
-
Defect distribution in a-Si: H pin solar cells before and after degradationBlock, M. et al. | 1994
- 705
-
Transient response of the photocurrent in a-Si: H layers and solar cellsUlrichs, C. et al. | 1994
- 709
-
Stability of amorphous silicon materials incorporated in solar cells and intrinsic layer profiling for enhanced stabilized performanceSchropp, R.E.I. et al. | 1994
- 713
-
Uniform-field model of a-Si: H pin solar cellsKusian, W. et al. | 1994
- 717
-
The dependence of a-Si:H-c-Si solar cell generator and spectral response characteristics on heterojunction band discontinuitiesEschrich, H. et al. | 1994
- 721
-
Amorphous silicon thin-film transistorsTsukada, T. et al. | 1994
- 727
-
Integrated conventional and laser re-crystallised amorphous silicon thin film transistors for large area imaging and display applicationsHack, M. et al. | 1994
- 731
-
Fabrication and performance of thin film transistors, TFTs, incorporating doped c-Si source and drain contacts, and boron-compensated c-Si channel layersHe, S. S. / Williams, M. J. / Stephens, D. J. / Lucovsky, G. et al. | 1993
- 731
-
Fabrication and performance of thin film transistors, TFTs, incorporating doped mc-Si source and drain contacts, and boron-compensated mc-Si channel layersHe, S.S. et al. | 1994
- 735
-
Application of photo induced discharge technique for the investigation of a-Si: H thin-film transistor instabilityFortunato, G. et al. | 1994
- 739
-
Density of states in thin film transistors from the modulated photocurrent technique: application to the study of metastabilitiesKleider, J.P. et al. | 1994
- 743
-
Hydrogenated amorphous silicon thin film transistor fabricated by n + anodizationBae, B.S. et al. | 1994
- 747
-
Voltage dependence of off current in a-Si: H TFT under backlight illuminationYoon, J.K. et al. | 1994
- 751
-
Activated hydrogen effects on the electrical stability of a-Si: H thin-film transistorsCarluccio, R. et al. | 1994
- 755
-
Simulations on back gate effects of a-Si TFT off-current under illuminationNishida, S. et al. | 1994
- 759
-
Fabrication of high performance APCVD a-Si TFT using ion dopingAhn, B.C. et al. | 1994
- 763
-
Annealing effects of low pressure mercury and excimer laser on degraded a-Si: H TFTsLee, S.K. et al. | 1994
- 767
-
Capacitance studies of the a-Si TFT input stageLong, A.R. et al. | 1994
- 771
-
a-Si: H linear and 2-D image sensorsWeisfield, R.L. et al. | 1994
- 777
-
Doped amorphous selenium based photoreceptors for electroradiography: determination of X-ray sensitivityAiyah, V. et al. | 1994
- 781
-
Measurement and simulation of the dynamic performance of a-Si: H image sensorsWieczorek, H. et al. | 1994
- 785
-
Optimization criteria for a-Si: H nipin color sensorsStiebig, H. et al. | 1994
- 789
-
Two dimensional image sensors based on amorphous silicon alloy p-i-n diodesCesare, G.De et al. | 1994
- 793
-
Hydrogenated amorphous silicon based light-addressable potentiometric sensor (LAPS) for hydrogen detectionPecora, A. et al. | 1994
- 797
-
Material properties, project design rules and performances of single and dual-axis a-Si: H large area position sensitive detectorsFortunato, E. et al. | 1994
- 801
-
a-Si: H based particle detectors with low depletion voltageMorosanu, C. et al. | 1994
- 805
-
Design, realization and characterization of mesa insulated a-Si bulk barrier phototransistorMasini, G. et al. | 1994
- 809
-
Visible thin film light emitting diode using a-SiN: H-a-SiC: H heterojunctionsKruangam, D. et al. | 1994
- 813
-
a-SiC: H thin film visible light-emitting diodes with highly conductive wide band gap a-SiC: H as the carrier injection layersLau, S.P. et al. | 1994
- 817
-
Use of a-Si: H memory devices for non-volatile weight storage in artificial neural networksHolmes, A.J. et al. | 1994
- 821
-
DC and ac measurements on metal-a-Si: H-metal thin film devicesHajto, J. et al. | 1994
- 825
-
In situ investigation of amorphous silicon-silicon dioxide interfaces by infrared ellipsometryOssikovski, R. et al. | 1994
- 829
-
Electronic and structural properties of the a-Si: H-a-SiNx: H interfacePlass, M.F. et al. | 1994
- 833
-
Electronic states of a-Si: H upon Cs adsorption and deep defect creationPatriarca, F. et al. | 1994
- 837
-
Carrier transport in a-Si: H-a-Si: N and a-Si: H- a-Si: C multilayersChévrier, J.-B. et al. | 1994
- 841
-
Structural and optical properties of a-Si: H-a-Ge: H multilayersDeki, H. et al. | 1994
- 845
-
A position detector based on the lateral photoeffect in a-Si: H-metal (Ti, Mo) multilayersPanckow, A.N. et al. | 1994
- 849
-
Interface state density of SiNx: H-c-Si MIS structureMaeda, K. et al. | 1994
- 853
-
Radiative transition with visible light in crystallized a-Ge: H- a-SiNx: H multiquantum-well structuresChen, K.J. et al. | 1994
- 857
-
Amorphous silicide formation in the Cr-amorphous silicon systemMasaki, Y. et al. | 1994
- 861
-
On the determination of the interface density of states in a-Si:H-a-Si1-xCx:H multilayersBertomeu, J. et al. | 1994
- 865
-
Optically-induced stepwise absorption in Se-Se85Te15 multilayersVateva, E. et al. | 1994
- 869
-
Amorphous silicon on TiO2: charge transfer and interface structureWahi, A. et al. | 1994
- 873
-
Charge transport along and across a-Si: H-a-SiC: H multilayersArlauskas, K. et al. | 1994
- 877
-
New applications of the equation-of-motion method: optical propertiesWeaire, D. et al. | 1994
- 881
-
Structure and optical properties of a-Si1-xNx:H alloysSotiropoulos, J. et al. | 1994
- 885
-
Femtosecond photomodulation spectroscopy of a-Si: H using an optical parametric oscillatorMoon, J.A. et al. | 1994
- 889
-
Optical properties of amorphous gallium arsenide filmsMurri, R. et al. | 1994
- 893
-
Study of band-edge parameters in a-Si: H alloys by polarized electroabsorption effectsTsutsumi, Y. et al. | 1994
- 897
-
Optical contrast formation in a-Si1-xCx: H films by ion implantationTsvetkova, T. et al. | 1994
- 901
-
Linear and nonlinear optical properties of chalcogenide glassesHajto, E. et al. | 1994
- 905
-
Influence of surface defects on CPM spectraAsano, A. et al. | 1994
- 909
-
Gap state defects in hydrogenated amorphous silicon-carbon alloys studied by photothermal deflection spectroscopyFathallah, M. et al. | 1994
- 913
-
Studies on optical absorption coefficients of a-Si:H by photoluminescence absorption spectroscopyNitta, S. / Nishimura, E. / Minamide, T. / Uchida, T. et al. | 1993
- 913
-
Studies on optical absorption coefficients a of a-Si: H by photoluminescence absorption spectroscopyNitta, S. et al. | 1994
- 917
-
Phonon localization and transport in disordered systemsOrbach, R. et al. | 1994
- 923
-
Nonequilibrium phonon dynamics in amorphous siliconScholten, A.J. et al. | 1994
- 927
-
Light scattering by acoustic phonons in unhydrogenated and hydrogenated amorphous siliconBustarret, E. et al. | 1994
- 931
-
Electronic and structural properties of porous siliconStutzmann, M. et al. | 1994
- 937
-
Preparation and properties of anodized amorphous siliconBustarret, E. et al. | 1994
- 941
-
New interpretation for visible photoluminescence in porous siliconKondo, M. et al. | 1994
- 945
-
Visible light emission at room temperature from PECVD a-Si:H:O:Du, J.F. et al. | 1994
- 949
-
A visible light-emitting diode using a PN junction of porous silicon and microcrystalline silicon carbideMimura, H. et al. | 1994
- 953
-
Ultrafast electronic relaxation processes in porous siliconMatsumoto, T. et al. | 1994
- 957
-
Nature of electron spin resonance centers in porous siliconYokomichi, H. et al. | 1994
- 961
-
Transport properties of selfsupporting porous siliconKlima, O. et al. | 1994
- 965
-
Light induced metastable effects on the electrical conductance in porous siliconLee, W.H. et al. | 1994