High-quality heteroepitaxial Ge growth on nano-patterned Si templates using diblock copolymer patterning (Englisch)
- Neue Suche nach: Lee, J.
- Neue Suche nach: Lee, J.
- Neue Suche nach: Wang, K.L.
- Neue Suche nach: Chen, H.-T.
- Neue Suche nach: Chen, L.-J.
In:
Journal of crystal growth
;
301
, 1
; 330-334
;
2007
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:High-quality heteroepitaxial Ge growth on nano-patterned Si templates using diblock copolymer patterning
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Beteiligte:
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Erschienen in:Journal of crystal growth ; 301, 1 ; 330-334
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Verlag:
- Neue Suche nach: Elsevier
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Erscheinungsort:Amsterdam [u.a.]
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Erscheinungsdatum:2007
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 38.31 / 33.61 / 35.90
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3475
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 301, Ausgabe 1
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 1
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Preface| 2007
- 4
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Controlling electronic properties of epitaxial nanocomposites of dissimilar materialsHanson, M.P. et al. | 2007
- 10
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Recent progress in nanostructure fabrication using MBEPloog, Klaus H. et al. | 2007
- 16
-
Quantitative structure determination of GaAs(001) under typical MBE conditions using synchrotron X-ray diffractionTakahasi, M. et al. | 2007
- 22
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Structure transition between two GaAs(001)-c(4×4) surface reconstructions in As4 fluxArai, T. et al. | 2007
- 26
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Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning methodIsomura, N. et al. | 2007
- 30
-
Growth simulation of fish-like pit pattern on GaAs(110)Ishii, A. et al. | 2007
- 34
-
Atomically controlled doping of nitrogen on GaAs(001) surfacesShimizu, N. et al. | 2007
- 38
-
RHEED metrology of Stranski–Krastanov quantum dotsFeltrin, A. et al. | 2007
- 42
-
Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrateNaritsuka, Shigeya et al. | 2007
- 47
-
Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscopeGomyo, A. et al. | 2007
- 50
-
Endotaxy of MnSb into GaSbBraun, Wolfgang et al. | 2007
- 54
-
Atmospheric oxygen in Mn doped GaAs-GaAs(001) thin films grown by molecular beam epitaxyXu, J.F. et al. | 2007
- 58
-
Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrixSemenov, Alexey et al. | 2007
- 62
-
A simple approach to temperature dependence of strain energy: Application to GaN-based semiconductorsIto, Tomonori et al. | 2007
- 67
-
Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sourcesSawada, M. et al. | 2007
- 71
-
In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxyCordier, Y. et al. | 2007
- 75
-
Ab initio-based approach on initial growth kinetics of GaN on GaN (001)Kangawa, Y. et al. | 2007
- 79
-
Real-time in-situ flux monitoring by wavelength-modulated atomic absorption spectroscopy in molecular beam epitaxy: Application to Ga flux measurementVignaud, D. et al. | 2007
- 84
-
P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBESoubervielle-Montalvo, C. et al. | 2007
- 88
-
Substrate temperature measurement using a commercial band-edge detection systemFarrer, I. et al. | 2007
- 93
-
Influence of interface interruption on spin relaxation in GaAs (110) quantum wellsLiu, L.S. et al. | 2007
- 97
-
Imaging of subbands in InAs-GaSb double quantum wells by low-temperature scanning tunneling spectroscopySuzuki, K. et al. | 2007
- 101
-
Electrical and optical studies of GaMnAs-GaAs(001) thin films grown by molecular beam epitaxyXu, J.F. et al. | 2007
- 105
-
Thermal imaging of wafer temperature in MBE using a digital cameraJackson, A.W. et al. | 2007
- 109
-
MBE growth of TlInGaAs-TlInP-InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelengthFujiwara, A. et al. | 2007
- 113
-
Effects of annealing on TlGaAs-GaAs single hetero structures and TlGaAs-GaAs multiple quantum well structures grown by low-temperature MBEOhnishi, K. et al. | 2007
- 117
-
Thallium incorporation during TlInAs growth by low-temperature MBETakushima, M. et al. | 2007
- 121
-
Temperature dependence of Bi behavior in MBE growth of InGaAs-InPFeng, Gan et al. | 2007
- 125
-
Optimization of GaInNAs(Sb)-GaAs quantum wells at 1.3– grown by molecular beam epitaxyNi, H.Q. et al. | 2007
- 129
-
Key issues associated with low threshold current density for InP-based quantum cascade lasersLi, A.Z. et al. | 2007
- 134
-
InAsPSb quaternary alloy grown by gas source molecular beam epitaxyTsai, Gene et al. | 2007
- 139
-
Development of GaAs-based MOSFET using molecular beam epitaxyDroopad, Ravi et al. | 2007
- 145
-
Growth and subband structure determination of high mobility hole gases on (001) and (110) GaAsGerl, C. et al. | 2007
- 148
-
Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxyPerraud, Simon et al. | 2007
- 152
-
Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAsGeka, Hirotaka et al. | 2007
- 158
-
Growth of (In,Ga)As-(Al,Ga)As quantum wells on GaAs(110) by MBEHey, R. et al. | 2007
- 163
-
Growth of GaAs with orientation-patterned structures for nonlinear opticsYu, Xiaojun et al. | 2007
- 168
-
Structural and optical studies of (AlAs) m -(GaAs) n type-I ultra short-period superlattices with fractional monolayerFujii, Kensuke et al. | 2007
- 172
-
Surface segregation of indium atoms during molecular beam epitaxy of InGaAs-GaAs superlattices on GaAs substratesKitada, Takahiro et al. | 2007
- 177
-
Photoreflectance study of InGaAs-AlAsSb quantum wells grown by molecular beam epitaxyMozume, T. et al. | 2007
- 181
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Buffer influence on AlSb-InAs-AlSb quantum wellsLi, Zhi Hua et al. | 2007
- 185
-
Negative and positive persistent photoconductivity effects in Al x Ga1− x As y Sb1− y -InAs quantum wellsIshida, S. et al. | 2007
- 190
-
Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxyYoshiba, Ippei et al. | 2007
- 194
-
High mobility metamorphic AlSb-InAs heterostructures grown on InP substratesDesplanque, L. et al. | 2007
- 199
-
Low-temperature transport properties in Al x Ga1− x As y Sb1− y -InAs quantum wells: Well-width dependenceIshida, S. et al. | 2007
- 203
-
Low-temperature growth of InSb(111) on Si(111) substrateMurata, K. et al. | 2007
- 207
-
Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstructionMori, M. et al. | 2007
- 212
-
Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistorsXu, Anhuai et al. | 2007
- 217
-
MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applicationsYarekha, D.A. et al. | 2007
- 221
-
A study on maskless selective growth of Mg-doping p-type GaAs using low-energy focused ion beamKim, E.M. et al. | 2007
- 225
-
Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxyChavanapranee, Tosaporn et al. | 2007
- 230
-
Dependence of the AlSb buffers on GaSb-GaAs(001) heterostructuresKim, H.S. et al. | 2007
- 235
-
Invalidity of graded buffers for InAs grown on GaAs (001)—A comparison between direct and graded-buffer growthJeong, Y. et al. | 2007
- 240
-
Strain compensation for InGaAs–AlAs–AlAsSb coupled double quantum wells by controlling the barrier layer compositionNagase, Masanori et al. | 2007
- 244
-
Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrateNoh, Y.K. et al. | 2007
- 248
-
Modification of InAs quantum dot structure during annealingKaizu, Toshiyuki et al. | 2007
- 252
-
Observation of abrupt first-order metal–insulator transition in Be-doped GaAsKim, Hyun-Tak et al. | 2007
- 256
-
Properties of low-temperature-grown InAs and their changes upon annealingShiba, M. et al. | 2007
- 260
-
GaMnAs grown on (001), (311)A and (110) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviourWurstbauer, Ursula et al. | 2007
- 264
-
Effect of substrate temperature on the properties of heavily Mn-doped GaAsLee, H.-J. et al. | 2007
- 268
-
MBE HgCdTe on Si and GaAs substratesHe, L. et al. | 2007
- 273
-
Zn irradiation effects in MBE growth of MgSe-BeZnSeTe II–VI compound superlattices on InP substratesNomura, Ichirou et al. | 2007
- 277
-
Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxyJo, M. et al. | 2007
- 281
-
Structural and optical properties of CdSe quantum dots induced by amorphous SeAichele, T. et al. | 2007
- 285
-
Al and N co-doped ZnTe Layers Grown by MBEIchiba, A. et al. | 2007
- 289
-
MBE growth of MgS nanowires characterized using AFMMoug, R.T. et al. | 2007
- 293
-
Amorphous-Te-mediated self-organization of CdSe-ZnSe nanostructuresMahapatra, S. et al. | 2007
- 297
-
Deep emissions of MBE-ZnTe on tilted GaAs substrateShigaura, G. et al. | 2007
- 301
-
Quasi-Stranski–Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxyYang, C.S. et al. | 2007
- 306
-
Light up-conversion mechanism of ZnSe–ZnTe superlatticesOhashi, M. et al. | 2007
- 310
-
Layer-by-layer growth and island formation in CdSe-ZnSe heteroepitaxyMahapatra, S. et al. | 2007
- 315
-
Very thin, high Ge content Si0.3Ge0.7 relaxed buffer grown by MBE on SOI(001) substrateMyronov, M. et al. | 2007
- 319
-
Island motion triggered by the growth of strain-relaxed SiGe-Si(001) islandsMerdzhanova, T. et al. | 2007
- 324
-
Isotopically controlled self-assembled Ge-Si nanostructuresMoutanabbir, O. et al. | 2007
- 330
-
High-quality heteroepitaxial Ge growth on nano-patterned Si templates using diblock copolymer patterningLee, J. et al. | 2007
- 335
-
Growth of strain relaxed Si1− y C y films using SOI substratesMurano, Masahiko et al. | 2007
- 339
-
Fabrication of Ge channels with extremely high compressive strain and their magnetotransport propertiesSawano, K. et al. | 2007
- 343
-
Growth temperature dependence of lattice structures of SiGe-graded buffer structures grown on Si(110) substrates by gas-source MBEArimoto, Keisuke et al. | 2007
- 349
-
Surface morphology of the Si(111) surface induced by Co-deposition of Si and CH4Suryana, R. et al. | 2007
- 353
-
Polarization-induced two-dimensional electron gas at Zn1− x Mg x O-ZnO heterointerfaceYano, Mitsuaki et al. | 2007
- 358
-
High electron mobility Zn polar ZnMgO-ZnO heterostructures grown by molecular beam epitaxyTampo, H. et al. | 2007
- 362
-
p-Type ZnO on sapphire by using O2–N2 co-activating and fabrication of ZnO LEDZhang, Z.Z. et al. | 2007
- 366
-
Growth of non-polar ZnO-(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxyChauveau, J.-M. et al. | 2007
- 370
-
ZnO epitaxial films grown by flux-modulated RF-MBEHirano, Katsuya et al. | 2007
- 373
-
Effects of low-temperature-grown ZnO buffer layer and Zn-O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBELu, Y.M. et al. | 2007
- 378
-
A novel approach of using a MBE template for ALD growth of high-κ dielectricsLee, K.Y. et al. | 2007
- 381
-
Growth of praseodymium oxide and silicate for high-k dielectrics by molecular beam epitaxyWatahiki, Tatsuro et al. | 2007
- 386
-
MBE grown high-quality Gd2O3-Si(111) hetero-structureLin, T.D. et al. | 2007
- 390
-
MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaNChang, Y.C. et al. | 2007
- 394
-
Characterization of Au thin films deposited on α-Sn(111)-(3×3)-InSb(111)A surfacesKasukabe, Y. et al. | 2007
- 400
-
Structural and transport properties of β-FeSi2 [100] oriented thin film on Si(001) substrateKakemoto, H. et al. | 2007
- 404
-
Quality improvement of III-nitride epilayers and their heterostructures grown on vicinal substrates by rf-MBEShen, X.Q. et al. | 2007
- 410
-
A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxySuda, J. et al. | 2007
- 414
-
Be and Mg co-doping in GaNKawaharazuka, A. et al. | 2007
- 417
-
MBE growth of GaN using 15N isotope for nuclear magnetic resonance applicationsNovikov, S.V. et al. | 2007
- 420
-
Effects of V-III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxySawahata, Junji et al. | 2007
- 424
-
Low-temperature deposition of hexagonal GaN films for UV electroluminescent devices by CS-MBE techniqueHonda, Tohru et al. | 2007
- 429
-
AlGaN-GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterizationStorm, D.F. et al. | 2007
- 434
-
Developments for the production of high-quality and high-uniformity AlGaN-GaN heterostructures by ammonia MBECordier, Y. et al. | 2007
- 437
-
Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBEFuruta, K. et al. | 2007
- 442
-
GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBETang, H. et al. | 2007
- 447
-
Fabrication of lateral lattice-polarity-inverted GaN heterostructureKatayama, Ryuji et al. | 2007
- 452
-
Electrical properties of MBE-grown AlGaN-GaN HEMT structures by using 4H-SiC (0001) vicinal substratesNakamura, N. et al. | 2007
- 457
-
Investigation of intersubband absorption in GaN-AlN multiple quantum wells grown on different substrates by molecular beam epitaxyLiu, X.Y. et al. | 2007
- 461
-
Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxyIwata, Shiro et al. | 2007
- 465
-
InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650nm rangeIvanov, Sergey V. et al. | 2007
- 469
-
Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN-Al2O3 templatesJmerik, V.N. et al. | 2007
- 473
-
Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBEKomaki, Hironori et al. | 2007
- 478
-
MBE growth of GaN on MgO substrateSuzuki, Ryotaro et al. | 2007
- 482
-
Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAsFoxon, C.T. et al. | 2007
- 486
-
Fabrication of GaN dot structure by droplet epitaxy using NH3Maruyama, Takahiro et al. | 2007
- 490
-
Growth of InN nanocolumns by RF-MBENishikawa, S. et al. | 2007
- 496
-
In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxyWang, Xinqiang et al. | 2007
- 500
-
A quantitative study of suppression effect for oxygen contamination by Ga beam irradiation in InN RF-MOMBE growthHashimoto, A. et al. | 2007
- 504
-
Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron–cyclotron resonance plasma-assisted molecular-beam epitaxyYodo, Tokuo et al. | 2007
- 508
-
RF–MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substratesNakamura, T. et al. | 2007
- 513
-
RF-MBE growth of InN-InGaN quantum well structures on 3C–SiC substratesHirano, S. et al. | 2007
- 517
-
RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayerShikata, G. et al. | 2007
- 521
-
The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxyYao, Yongzhao et al. | 2007
- 525
-
All-GaInNAs ultrafast lasers: Material development for emitters and absorbersRutz, A. et al. | 2007
- 529
-
Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of (Ga,In)(N,As) multiple quantum wellsIshikawa, Fumitaro et al. | 2007
- 534
-
TlGaInNAs-GaAs double quantum well structures: Effect of barrier layers and substrate orientationKrishnamurthy, D. et al. | 2007
- 539
-
Band alignments of InGaPN-GaPN quantum well structures on GaP and SiUmeno, Kazuyuki et al. | 2007
- 545
-
Growth of low-threshold GaInNAs-GaAs triple-quantum-well lasersKasai, J. et al. | 2007
- 548
-
Anneal-induced structural changes of GaIn(N)As-Ga(N)As multiple quantum wells grown by molecular beam epitaxyLiu, H.F. et al. | 2007
- 552
-
Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substratesIbáñez, J. et al. | 2007
- 556
-
Nitrogen-dependent effects on GaInNAs photoluminescence upon annealingLiverini, V. et al. | 2007
- 560
-
Effect of residual hydrogen and temperature on initial growth stages and properties of GaAs1− x N xFotkatzikis, A. et al. | 2007
- 565
-
Study of optical properties of GaAsN layers prepared by molecular beam epitaxyPulzara-Mora, A. et al. | 2007
- 570
-
Parameter tunable GaInNAs saturable absorbers for mode locking of solid-state lasersRutz, A. et al. | 2007
- 575
-
Improvement of crystal quality of thick InGaAsN layers grown on InP substrates by adding antimonyMiura, K. et al. | 2007
- 579
-
Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBEShimizu, Yukiko et al. | 2007
- 583
-
GaNAs-GaAs multiple quantum well grown by modulated N radical beam sequence of RF-MBE: Effect of growth interruptionFujii, Kensuke et al. | 2007
- 588
-
Structural and magnetic properties of epitaxial Fe3Si-GaAs heterostructuresHsu, Y.L. et al. | 2007
- 592
-
Growth, interface structure and magnetic properties of Heusler alloy Co2FeSi-GaAs(001) hybrid structuresHashimoto, M. et al. | 2007
- 597
-
Epitaxial growth of ferromagnetic Fe3N films on Si(111) substrates by molecular beam epitaxyYamaguchi, K. et al. | 2007
- 602
-
Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity surface-emitting laserHolub, M. et al. | 2007
- 607
-
Epitaxial growth of bcc Mn films on 4H-SiC(0001) by molecular beam epitaxyWang, Wenhong et al. | 2007
- 611
-
Schottky barrier MOSFETs with epitaxial ferromagnetic MnAs-Si(001) source and drain: Post-growth annealing and transport characteristicsSugiura, K. et al. | 2007
- 615
-
Molecular beam epitaxy growth, magnetic and structural properties of MnAs thin films grown on InP(001) and InGaAsPYokoyama, M. et al. | 2007
- 619
-
Formation and properties of MnAs magnetic nanoscaled dots on sulfur-passivated semiconductor substratesKubo, K. et al. | 2007
- 623
-
Preparation of high-T C ferromagnetic (In,Mn)As with strongly As-rich conditionsSchallenberg, T. et al. | 2007
- 627
-
Fabrication, structural and magnetic properties of InAlMnAs and InAlAs:MnAs granular thin filmsYokoyama, M. et al. | 2007
- 631
-
Theoretical study of alloy phase stability in zincblende Ga1− x Mn x AsHatano, Keishi et al. | 2007
- 634
-
Enhanced magnetization by modulated Mn delta doping in GaAsYanagisawa, Kohei et al. | 2007
- 638
-
Epitaxial GaMnAs layers and nanostructures with anisotropy in structural and magnetic propertiesWenisch, J. et al. | 2007
- 642
-
Molecular beam epitaxy and magnetic properties of GaMnNAsKobayashi, Genki et al. | 2007
- 647
-
Epitaxial growth and magnetic properties of GaMnNAsManago, T. et al. | 2007
- 651
-
Growth and characterization of ferromagnetic cubic GaCrN: Structural and magnetic propertiesKimura, S. et al. | 2007
- 656
-
MBE growth of Mn-doped Zn–Sn–As compounds on (001) InP substratesAsubar, J.T. et al. | 2007
- 662
-
Existence of localized spins in pair delta-doped GaAs structuresNoh, J.P. et al. | 2007
- 666
-
Percolation transition via quantum point contacts in Be delta-doped GaAs structures grown by molecular beam epitaxyShimogishi, F. et al. | 2007
- 671
-
The coherent {100} and {110} interfaces between rocksalt-PbTe and zincblende-CdTeGroiss, H. et al. | 2007
- 676
-
Epitaxial growth and luminescence characterization of Si-β-FeSi2-Si multilayered structures by molecular beam epitaxyMurase, S. et al. | 2007
- 680
-
Molecular beam epitaxy of band gap tunable ternary semiconducting silicides Ba1− x Sr x Si2 for photovoltaic applicationSuemasu, T. et al. | 2007
- 684
-
Thin film growth of (Cu, C)Ba2Ca( n −1)Cu n O y (n=1–4) superconductor by molecular beam epitaxyShibata, H. et al. | 2007
- 687
-
Characteristics of multivalent impurity doped C60 films grown by MBENishinaga, Jiro et al. | 2007
- 692
-
Kinetic model of intermixing during self-assembled InAs quantum dot formationHeyn, Ch et al. | 2007
- 697
-
MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (111)B GaAs surfaceAkiyama, Y. et al. | 2007
- 701
-
Guided quantum dot ordering by self-organized anisotropic strain engineering and step engineering on shallow-patterned substratesSelcuk, E. et al. | 2007
- 705
-
Initial stages of self-assembled InAs-InP(001) quantum wire formationFuster, David et al. | 2007
- 709
-
Emission-wavelength extension of nitrided InAs-GaAs quantum dots with different sizesMizuno, H. et al. | 2007
- 713
-
High-density InSb-based quantum dots emitting in the mid-infraredTasco, V. et al. | 2007
- 718
-
Amplified spontaneous emission from GaSb quantum dots in Si grown by MBEYasuhara, N. et al. | 2007
- 722
-
Photoluminescence characterization of PbTe-CdTe quantum dots grown by lattice-type mismatched epitaxyKoike, Kazuto et al. | 2007
- 726
-
Selective growth of InAs quantum dots using In nano-dot arrays formed by nano-jet probe methodOhkouchi, S. et al. | 2007
- 731
-
Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structuresShibata, K. et al. | 2007
- 735
-
Self-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxySuraprapapich, S. et al. | 2007
- 740
-
Ring-shaped GaAs quantum dot laser grown by droplet epitaxy: Effects of post-growth annealing on structural and optical propertiesMano, T. et al. | 2007
- 744
-
Selective growth of ordered InGaAs quantum dots on patterned substrates with nano-hole arraysOhkouchi, S. et al. | 2007
- 748
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Shape transformation of self-assembled InAs quantum dots by overgrowth with GaAs and AlAsSchramm, A. et al. | 2007
- 751
-
Fabrication of ultra-low density and long-wavelength emission InAs quantum dotsHuang, Shesong et al. | 2007
- 755
-
Fabrication of high-quality CdSe quantum dots for green laser diodes by molecular beam epitaxyOhkuno, Koji et al. | 2007
- 759
-
Lateral self-arrangement of self-assembled InAs quantum dots by an intentional-induced dislocation networkWelsch, H. et al. | 2007
- 762
-
InAs quantum dots array grown with an As2 source on non-planar GaAs substratesSugaya, T. et al. | 2007
- 766
-
Dosage dependence of Ge quantum dots grown on carbon-implanted Si substratesOgawa, Masaaki et al. | 2007
- 771
-
Selective area growth of InAs quantum dots with a metal mask towards optical integrated circuit devicesOzaki, N. et al. | 2007
- 776
-
Optical properties of stacked InAs self-organized quantum dots on InP (311)BOshima, Ryuji et al. | 2007
- 781
-
Growth and magneto-optical properties of CdSe-ZnMnSe self-assembled quantum dotsLee, Sanghoon et al. | 2007
- 785
-
Feasibility study of a semiconductor quantum bit structure based on a spin FET embedded with self-assembled InAs quantum dotsKashiwada, Saori et al. | 2007
- 789
-
Investigation of CdSe quantum dots in MgS barriers as active region in light emitting diodesGust, A. et al. | 2007
- 793
-
Effect of strain anisotropies on RHEED patterns of quantum dotsFeltrin, A. et al. | 2007
- 797
-
High-temperature growth of Mn-irradiated InAs quantum dotsNagahara, Seiji et al. | 2007
- 801
-
InGaAs quantum dots grown with As4 and As2 sources using molecular beam epitaxySugaya, T. et al. | 2007
- 805
-
Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxyKumagai, N. et al. | 2007
- 809
-
Green light emitting diodes with CdSe quantum dotsAraki, Yuji et al. | 2007
- 812
-
Evolution of self-assembled lateral quantum dot moleculesSiripitakchai, N. et al. | 2007
- 817
-
Temperature-insensitive detectivity of 5-pair InAs-GaAs quantum-dot infrared photodetectors with asymmetric device structureChou, Shu-Ting et al. | 2007
- 821
-
MBE growth of InAs self-assembled quantum dots embedded in GaNAs strain-compensating layersHashimoto, Takayuki et al. | 2007
- 825
-
AlAs coating for stacked structure of self-assembled InAs-GaAs quantum dotsYokota, H. et al. | 2007
- 828
-
Molecular beam epitaxial growth of very large lateral anisotropic GaSb-GaAs quantum dotsJiang, Chao et al. | 2007
- 833
-
Intersubband absorption in p-type Si1− x Ge x quantum dots on pre-patterned Si substrates made by a diblock copolymer processCha, Dongho et al. | 2007
- 837
-
An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs-GaAs(111)Joe, Hidenori et al. | 2007
- 841
-
The influence of InAs coverage on the performances self-assembled InGaAs quantum ringsHuang, Chun-Yuan et al. | 2007
- 846
-
Site control of very low density InAs QDs on patterned GaAs nano-wire surfacesUeta, Akio et al. | 2007
- 849
-
Closely stacking growth of highly uniform InAs quantum dots on self-formed GaAs nanoholesTsukiji, Nobukazu et al. | 2007
- 853
-
GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperatureHarmand, J.C. et al. | 2007
- 857
-
Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (111)B substratesTamai, Isao et al. | 2007
- 862
-
A Monte-Carlo simulation study of twinning formation in InP nanowiresSano, Kosuke et al. | 2007
- 866
-
Growth temperature dependence of MBE-grown ZnSe NanowiresChan, S.K. et al. | 2007
- 871
-
Orientation and size dependence on structural stability in silicon nanowires: A transferable tight-binding calculation studyMaeda, S. et al. | 2007
- 876
-
Formation of patterned Ga InAs-GaAs hetero-structures using amorphous arsenic maskNoritake, Y. et al. | 2007
- 880
-
Structure of GaSb-GaAs(001) surface using the first principles calculationIshii, A. et al. | 2007
- 884
-
Study of the GaAs MBE growth on (631)-oriented substrates by Raman spectroscopyCruz-Hernández, E. et al. | 2007
- 889
-
Interface analysis of InAs-GaSb superlattice grown by MBESatpati, B. et al. | 2007
- 893
-
Epitaxial growth of GaInAs-AlGaAsSb quantum cascade lasersManz, C. et al. | 2007
- 897
-
Piezoresistance of suspended InAs-AlGaSb heterostructure nanobeamYamazaki, Kenji et al. | 2007
- 902
-
Ultra-low-frequency photocurrent self-oscillation in strained In x Ga1− x As quantum well diodesTanigawa, K. et al. | 2007
- 906
-
Enhancement of magnetic field in superconductor and magnetic semiconductor quantum well hybrid structureLee, Sanghoon et al. | 2007
- 910
-
g-factor of two-dimensional electrons in selectively doped n-AlGaAs-GaAs heterojunctions with embedded InGaAs quantum dotsKawazu, Takuya et al. | 2007
- 914
-
MBE-grown metamorphic lasers for applications at telecom wavelengthsLedentsov, N.N. et al. | 2007
- 923
-
Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45μm metamorphic InAs quantum dot lasers on GaAsMi, Z. et al. | 2007
- 927
-
Room temperature, low-threshold distributed feedback quantum cascade lasers at ∼8.4 and ∼7.7μmXu, Gangyi et al. | 2007
- 931
-
High-power, narrow-ridge, mid-infrared interband cascade lasersCanedy, C.L. et al. | 2007
- 935
-
Tuning the emission frequency of a 2THz quantum cascade laser by altering the total thickness of the structureBeere, H.E. et al. | 2007
- 941
-
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μmBoehm, Gerhard et al. | 2007
- 945
-
MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter sectionBlokhin, S.A. et al. | 2007
- 951
-
MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devicesAkazawa, Masamichi et al. | 2007
- 955
-
Metamorphic molecular beam epitaxy growth and selective wet etching for epitaxial layer lift-off of AlAsSb toward optical waveguides with high optical confinementGozu, Shin-ichiro et al. | 2007
- 959
-
Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAsLi, L.H. et al. | 2007
- 963
-
Properties of InAsSbN quantum well laser diodes operating at 2μm wavelength region grown on InP substratesKawamura, Yuichi et al. | 2007
- 967
-
Growth and characterization of GaInSb-GaInAsSb hole-well laser diodes emitting near 2.93μmCerutti, L. et al. | 2007
- 971
-
Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxyTångring, I. et al. | 2007
- 975
-
Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emissionYoshimoto, Masahiro et al. | 2007
- 979
-
Application of rapid thermal annealing on 1.3–1.55μm GaInNAs(Sb) lasers grown by molecular beam epitaxyZhao, H. et al. | 2007
- 984
-
Photonic dot structure which emits photons horizontally to a built-in waveguideMukai, Kohki et al. | 2007
- 989
-
Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs-GaAsP quantum wellsXiang, N. et al. | 2007
- 993
-
III–V dilute nitride-based multi-quantum well solar cellFreundlich, A. et al. | 2007
- 997
-
High performance miniaturized InSb photovoltaic infrared sensors operating at room temperatureKuze, N. et al. | 2007
- 1001
-
Solid source MBE growth on InP-based DHBTs for high-speed data communicationAidam, R. et al. | 2007
- 1005
-
High-speed InGaAsSb-InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layersWu, Bing-Ruey et al. | 2007
- 1009
-
Interfacial trap characteristics in depletion mode GaAs MOSFETsLee, T.C. et al. | 2007
- 1013
-
Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectricTsai, P.J. et al. | 2007
- 1017
-
High current density and high PVCR Si-Si1− x Ge x DQW RTD formed with quadruple-layer bufferMaekawa, Hirotaka et al. | 2007
- 1021
-
Fabrication and characterization of C60 FET using highly c-axis oriented poly-crystalline AlN insulator filmHashimoto, A. et al. | 2007
- 1025
-
Thermal stability of Ti-Pt-Au ohmic contacts for cryogenically cooled InP-based HEMTs on (411)A-oriented substrates by MBEWatanabe, Issei et al. | 2007
- 1030
-
Author Index Vol. 301-302| 2007
- 1047
-
Subject Index Vol.301-302| 2007
-
Contents - MBE XIV| 2007