107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies (Englisch)
- Neue Suche nach: Mairiaux, E
- Neue Suche nach: Mairiaux, E
- Neue Suche nach: Desplanque, L
- Neue Suche nach: Wallart, X
- Neue Suche nach: Zaknoune, M
In:
IEEE electron device letters
;
31
, 4
; 296-299
;
2010
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies
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Beteiligte:
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Erschienen in:IEEE electron device letters ; 31, 4 ; 296-299
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Verlag:
- Neue Suche nach: IEEE
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Erscheinungsort:New York, NY
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Erscheinungsdatum:2010
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ISSN:
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ZDBID:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 770/5670
- Neue Suche nach: 53.51
- Weitere Informationen zu Basisklassifikation
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Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 31, Ausgabe 4
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